TWI347635B - Method for fabricating semiconductor device including recess gate - Google Patents

Method for fabricating semiconductor device including recess gate

Info

Publication number
TWI347635B
TWI347635B TW096124287A TW96124287A TWI347635B TW I347635 B TWI347635 B TW I347635B TW 096124287 A TW096124287 A TW 096124287A TW 96124287 A TW96124287 A TW 96124287A TW I347635 B TWI347635 B TW I347635B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
device including
fabricating semiconductor
recess gate
including recess
Prior art date
Application number
TW096124287A
Other languages
English (en)
Other versions
TW200818310A (en
Inventor
Yong-Tae Cho
Jae-Seon Yu
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200818310A publication Critical patent/TW200818310A/zh
Application granted granted Critical
Publication of TWI347635B publication Critical patent/TWI347635B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW096124287A 2006-09-28 2007-07-04 Method for fabricating semiconductor device including recess gate TWI347635B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060095165A KR100869359B1 (ko) 2006-09-28 2006-09-28 반도체 소자의 리세스 게이트 제조 방법

Publications (2)

Publication Number Publication Date
TW200818310A TW200818310A (en) 2008-04-16
TWI347635B true TWI347635B (en) 2011-08-21

Family

ID=39256141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096124287A TWI347635B (en) 2006-09-28 2007-07-04 Method for fabricating semiconductor device including recess gate

Country Status (5)

Country Link
US (1) US7910438B2 (zh)
JP (1) JP2008085341A (zh)
KR (1) KR100869359B1 (zh)
CN (1) CN100536078C (zh)
TW (1) TWI347635B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858476B2 (en) * 2006-10-30 2010-12-28 Hynix Semiconductor Inc. Method for fabricating semiconductor device with recess gate
US7572704B2 (en) * 2006-12-27 2009-08-11 Hynix Semiconductor Inc. Method for forming metal pattern and method for forming gate electrode in semiconductor device using the same
US9190495B2 (en) * 2008-09-22 2015-11-17 Samsung Electronics Co., Ltd. Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor
US8071481B2 (en) * 2009-04-23 2011-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming highly strained source/drain trenches
KR101585214B1 (ko) * 2009-09-03 2016-01-13 삼성전자주식회사 리세스 형성 방법 및 이를 포함하는 반도체 소자의 형성 방법
US9117759B2 (en) 2011-08-10 2015-08-25 Micron Technology, Inc. Methods of forming bulb-shaped trenches in silicon
CN103367399B (zh) * 2012-03-31 2016-03-16 中芯国际集成电路制造(上海)有限公司 晶体管及晶体管的形成方法
US8659079B2 (en) * 2012-05-29 2014-02-25 Nanya Technology Corporation Transistor device and method for manufacturing the same
KR101382328B1 (ko) * 2012-11-01 2014-04-08 현대자동차 주식회사 반도체 소자 및 그 제조 방법
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) * 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
KR20150062487A (ko) * 2013-11-29 2015-06-08 삼성전자주식회사 이미지 센서
JP7071884B2 (ja) * 2018-06-15 2022-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7156690B2 (ja) * 2018-12-14 2022-10-19 日清紡マイクロデバイス株式会社 電子デバイスの製造方法
CN114093942B (zh) * 2020-07-30 2024-05-28 中国科学院微电子研究所 一种半导体结构、其制造方法及dram

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132569A (ja) 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS61266584A (ja) * 1985-05-22 1986-11-26 Tokuda Seisakusho Ltd ドライエツチング方法
DE3809218C2 (de) * 1987-03-20 1994-09-01 Mitsubishi Electric Corp Halbleitereinrichtung mit einem Graben und Verfahren zum Herstellen einer solchen Halbleitereinrichtung
JPH0414868A (ja) * 1990-05-09 1992-01-20 Hitachi Ltd 半導体記憶装置とその製造方法
US6171510B1 (en) * 1997-10-30 2001-01-09 Applied Materials Inc. Method for making ink-jet printer nozzles
US5892252A (en) * 1998-02-05 1999-04-06 Motorola, Inc. Chemical sensing trench field effect transistor and method for same
US6018174A (en) * 1998-04-06 2000-01-25 Siemens Aktiengesellschaft Bottle-shaped trench capacitor with epi buried layer
US6232171B1 (en) * 1999-01-11 2001-05-15 Promos Technology, Inc. Technique of bottle-shaped deep trench formation
KR100282452B1 (ko) * 1999-03-18 2001-02-15 김영환 반도체 소자 및 그의 제조 방법
JP3457236B2 (ja) * 1999-11-05 2003-10-14 茂徳科技股▲ふん▼有限公司 深いトレンチキャパシター蓄積電極の製造方法
TW506079B (en) * 2000-02-17 2002-10-11 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP4200626B2 (ja) 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
JP3392108B2 (ja) * 2000-06-27 2003-03-31 プロモス テクノロジー インコーポレイテッド 半導体装置用ボトル型ディープトレンチの製造方法
US6989108B2 (en) * 2001-08-30 2006-01-24 Micron Technology, Inc. Etchant gas composition
JP3985537B2 (ja) * 2002-01-31 2007-10-03 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
US6673714B2 (en) * 2002-04-25 2004-01-06 Hewlett-Packard Development Company, L.P. Method of fabricating a sub-lithographic sized via
KR100558544B1 (ko) * 2003-07-23 2006-03-10 삼성전자주식회사 리세스 게이트 트랜지스터 구조 및 그에 따른 형성방법
KR100566303B1 (ko) 2003-12-15 2006-03-30 주식회사 하이닉스반도체 리세스된 게이트 전극 형성 방법
US7370515B2 (en) * 2004-06-21 2008-05-13 Veeco Instruments Inc. Probes for use in scanning probe microscopes and methods of fabricating such probes
US20060113590A1 (en) * 2004-11-26 2006-06-01 Samsung Electronics Co., Ltd. Method of forming a recess structure, recessed channel type transistor and method of manufacturing the recessed channel type transistor
US7560359B2 (en) * 2004-11-26 2009-07-14 Samsung Electronics Co., Ltd. Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures
KR100562657B1 (ko) * 2004-12-29 2006-03-20 주식회사 하이닉스반도체 리세스게이트 및 그를 구비한 반도체장치의 제조 방법
KR20060079331A (ko) 2004-12-30 2006-07-06 주식회사 하이닉스반도체 반도체 소자의 리세스 게이트 형성 방법
KR20060087875A (ko) * 2005-01-31 2006-08-03 주식회사 하이닉스반도체 스텝게이트를 갖는 반도체소자 및 그의 제조 방법
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
KR100744068B1 (ko) * 2005-04-29 2007-07-30 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조 방법
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
JP2007035823A (ja) * 2005-07-26 2007-02-08 Elpida Memory Inc トレンチ形成方法、半導体装置の製造方法および半導体装置
KR100696382B1 (ko) * 2005-08-01 2007-03-19 삼성전자주식회사 반도체 소자 및 그 제조방법
KR100700332B1 (ko) 2005-11-01 2007-03-29 주식회사 하이닉스반도체 플라스크형 리세스 게이트를 갖는 반도체 소자의 제조방법
KR100628378B1 (ko) * 2005-11-10 2006-09-27 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조방법
KR100733446B1 (ko) * 2005-11-16 2007-06-29 주식회사 하이닉스반도체 플라스크형 리세스 게이트를 갖는 반도체 소자의 제조방법
KR100744658B1 (ko) * 2005-11-29 2007-08-01 주식회사 하이닉스반도체 플라스크형 리세스 게이트를 갖는 반도체 소자의 제조방법
KR100799121B1 (ko) * 2005-12-22 2008-01-29 주식회사 하이닉스반도체 벌브 리세스 게이트를 갖는 반도체 소자의 제조방법
US7492005B2 (en) * 2005-12-28 2009-02-17 Alpha & Omega Semiconductor, Ltd. Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes
KR100772562B1 (ko) * 2005-12-28 2007-11-02 주식회사 하이닉스반도체 벌브 리세스 게이트를 갖는 반도체 소자의 제조방법
US7608195B2 (en) * 2006-02-21 2009-10-27 Micron Technology, Inc. High aspect ratio contacts
JP2007250855A (ja) * 2006-03-16 2007-09-27 Elpida Memory Inc 半導体装置及びその製造方法
US7488685B2 (en) * 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
KR100753083B1 (ko) * 2006-04-28 2007-08-31 주식회사 하이닉스반도체 반도체소자의 리세스채널 형성 방법

Also Published As

Publication number Publication date
KR100869359B1 (ko) 2008-11-19
CN101154579A (zh) 2008-04-02
US7910438B2 (en) 2011-03-22
JP2008085341A (ja) 2008-04-10
US20080081449A1 (en) 2008-04-03
TW200818310A (en) 2008-04-16
KR20080029300A (ko) 2008-04-03
CN100536078C (zh) 2009-09-02

Similar Documents

Publication Publication Date Title
TWI347635B (en) Method for fabricating semiconductor device including recess gate
TWI348746B (en) Method for fabricating semiconductor device
TWI318439B (en) Method for manufacturing semiconductor device
TWI365490B (en) Semiconductor device and method for manufacturing same
EP2015353A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
TWI369717B (en) Method for forming semiconductor device
HK1132584A1 (en) Method for manufacturing semiconductor sensor device
TWI365508B (en) Manufacturing method of semiconductor device
TWI366218B (en) Method for manufacturing semiconductor device
TWI370516B (en) Semiconductor device manufacturing method
GB0816666D0 (en) Semiconductor field effect transistor and method for fabricating the same
TWI373182B (en) Method for manufacturing semiconductor optical device
EP2341529A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
EP2325882A4 (en) Method for manufacturing semiconductor device
TWI366892B (en) Method for fabricating semiconductor device
TWI371836B (en) Semiconductor device and method for fabricating the same
EP2092552A4 (en) MANUFACTURING METHOD FOR SEMICONDUCTOR COMPONENTS
EP2096678A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2346071A4 (en) VERBUND SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
TWI366864B (en) Method for fabricating semiconductor device
EP2064732A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI370596B (en) Method for manufacturing semiconductor optical device
EP2020683A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1922749A4 (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
TWI348187B (en) Polishing method and method for fabricating semiconductor device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees