TWI343102B - Thermal enhanced package - Google Patents
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- TWI343102B TWI343102B TW096103334A TW96103334A TWI343102B TW I343102 B TWI343102 B TW I343102B TW 096103334 A TW096103334 A TW 096103334A TW 96103334 A TW96103334 A TW 96103334A TW I343102 B TWI343102 B TW I343102B
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Description
1343102 % 九、發明說明: 【發明所屬技術領域】 本發明-般地涉及積體電路封裝。本發明更尤其提供用於具有熱加 強的性能表現的碰電路封裝的方法和系統。僅作爲示例,本發明可以 應用至:-種㈣f路職’具有安裝在導熱及/或導電基板上且包封在 "電材料中之、-個或更多個半導體晶粒(die)。但歧當瞭解本發明 具有更爲寬廣的應用範圍。
【先前技術】 由於對小佔用面積(footprint)和高性能表現的工業要求許多現代 積體電路(1C)的特徵在於較高的熱負載。隨著齡載和封裝密度的增 大’傳統_體電路(IC)賴無法提供高性能表wc所需的熱性能表 ,和電性能表現。因此,在本技術中須要朝於提供具有加強之献性能 表現的積體電路封裝的方法和系統。 ·、 【發明内容】 ,據本發明的實施例’提供與積體電關裝有騎技術和系統。更 ^疋’本發明提供肋具有加強的触能表現的㈣電輯裝的方 及至:―種積體電路雖,具有安裝 叔;,、:上電基板包封在介電材料中的—個或更多個半導體晶 但疋應s瞭解’本發明具有更爲寬廣的應用範圍。 方味t本發明的—個實施例’提供—_造频電麟裝的方法。該 體'曰二„體晶粒的第-表面裝附到導熱及/或導電,在半導 ,接心封在包封材料^該方法更包滅 連接器中的—個或更多個,因此形成佈線表面。該方 於.第、„多條導電跡線。多條導電跡線中的每—條的特徵在 於·4-部分’其與多個晶粒連接器之—電性連通:以及第二部分= 5 1343102 與封裝連接器電性連通。在一個實施例中,絕緣層被形成在佈線表面之 上,並且多條第二級導電跡線被形成在絕緣層上,因此形成具有多層佈 線的積體電路封裝。 八 曰 根據本發明的另一實施例,提供一種熱加強式積體電路封裝。該熱 加強式積體電贿裝包括:導熱及/或導電基板;軸在導缺/或導電基 板上的晶粒裝附材料;以及具有第一表面、多個側面以及與第一表面相 對的第一表面的半導體晶粒。第一表面鄰近晶粒裝附材料。該執加強式 積體電路封裝更包括:多個晶粒連接器,其與在半導體晶粒的第二表面 上提供的多個晶粒堅電性連通;以及包封層,該包封層的特徵在於:位 ^導熱及/或導電基板附近的第__包封表面;以及與第_表面相對的第二 c封表面包封層包圍半導體晶粒的多個側面,並且位於半導體a拖的 ;;f r ° 封層的第二包封表面上的佈線層。 μ *導體日曰拉斜^體日曰粒包括:裝附到導熱及/或導電基板 及與第一表面相對的第二表面。該積體電路封裝更包括: 曰粒的第二表面上的多個晶粒連接器;包封半導體晶粒和 部分的包封材料。包封材料的佈線表面包括多個晶 導積體電路封裝更包括形成在佈線表面上的多條 中多條導電跡線中的每一條的特徵在於:與多個晶粒連接 在個t連ί之第一部分,以及與封裝連接器電性連通的第二部分。 ^-個貫她例中’該積體電路封裝更包括:形成在佈線表面之上的絕緣 線的積體電路封裝。夕條第一及導電跡線,因此形成具有多層佈 裝的實施例.,提供—種加工熱加強式積體電路封 以及將ίί熱及電基板的表面上形成晶粒裝附材料 :多個側面$ 表面安裝到晶粒裝附材料層。半導體晶粒 ,夕個側面和與第-表面相對的第二表面 在半導體晶粒的第二表面上接供沾夕伽曰X方法更匕括升/成與 梃供的夕個a曰粒墊發生電性通信的多個晶粒 6 連接器’以及形成包觸,該包舰的特徵在於位於導熱及 第-包封表面和與第—包封表面相對的第二包封表面:包封G 圍半導體晶粒的多個側面,並且位於半導體晶粒的第二表面的第^ 之上。該方法更包括在第二包封表面上形成佈線層。 。刀 根據本發明的一個特定實施例,提供一種積體電路封裝。該 封,包括:祕支持半導體晶粒的第—表面的裝置,驗向半導體曰 =二一表面提供電信號的裝置,以及用於包封半導體晶粒的裝置; 更包括用於將電信號從半導體晶粒的第二表面傳送到“ 執fii發明的另—特定實施例,提供—種熱加強式積體電路封裝。 %·,、加強式碰電路封裝包括祕支持轉體晶 粒的特徵在於:第一表面、與第一表面相對的第二表面、以及 面延伸到第—表面的多侧面。該熱加強式積體電路封裝亦包括 體晶粒的第二表面電祕到導電跡線;以及裝置,用^包封 〃错由本發明可以達成優於傳統技術之許多效益。例如,本發明的實 ^例提供-種與相較於傳賊裝具有改善的熱耗散性質之積體電路封 裝。此外,-些實施例提供額外被動元件給此積體電路封裝。取決於實 或更多個此等效益、以及其他效益。此等與其他效益 將在本忒明書中尤其與以下圖式一起更詳細說明。 【實施方式】 第1圖是根據本發明-個實施例的積體電路封裝的簡化橫載面圖。 如第1 ®所示,半導體晶粒114被利用晶粒裝附材料η2裝附到導熱及/ 電基板no ’例如金屬基板。導熱及/或導電基板丨】〇可以利用由預 疋的導熱梓機械硬度為職之銅或其他金騎成。賴及/或導電基板 1〇的功能包括充當散熱器⑽善熱耗散。糾,導熱及/或導電基板提 ^電^能’例如作為接地平面。晶粒裝附材料]12可以是各種導熱枯合 ㈣中的—種…般來說’晶粒裝耐料⑴的特徵在於祕合強度、
Claims (1)
- 十、申請專利範圍: 1. 一種製造频電路雖之枝,其包括以下步驟: 的第Γ表面裝附到導熱及/或導電基板; Ba粒的第二表面上形成多個晶粒連接器; 晶㈣接_在 在該和與封裝連接器發生電性通信的二$生電性通信的第一部分 2.如申請專利範圍第1項之方法,更包括 也成耗接到遠佈線表面的焊料遮罩層。 3·如申請專利範圍第丨項之方法,其中 »玄‘熱及/或導電基板包括金屬基板。4.如申請柄細帛3項之方法方法,其中 該金屬基板包括銅板。 5.如申請專利範圍第1項之方法其中 該包封材料包括介電材料。 6‘如申睛專利範圍第5項之方法,其中 β玄介電材料包括環氡樹脂。 7.如申4專利範圍第1項之方法,其中 去除該包珊料的-部分的步驟包括:_該包购料祕露部分。 28 1343102 8.如申請專利範圍第1項之方法,其中 違封裝連接器包括焊料球。 9·如申請專利範圍第1項之方法,更包括: 在該佈線表面之上形成絕緣層;以及 因此形成具❹層佈線的積 在邊絕緣層上形成多條第二級導電跡線 體電路封裝。 10. —種熱加強式積體電路封裝,包括: 導熱及/或導電基板; 形成在該導熱及/或導電基板上的晶粒裝附材料; 具有第-表面、多_面以及與該第—表面相對的第二表 晶粒,其中該第一表面鄰近該晶粒裝附材料; 與在該半導體晶粒的第二表面上提供的多個晶粒塾發 個晶粒連接器; 包封層,其特徵在於位於該導熱及/或導電基板附近的第一包封表面, 以及與S玄第一表面相對的第二包封表面,其中該包封層係一單一 單元材料,連續沉積以包圍該半導體晶粒的多個側面7並且位於 6玄半導體晶粒的第二表面的第一部分之上;以及 形成在該包封層的第二包封表面上的佈線層。 11. 如申請專利範圍第1〇項之熱加強式積體電路封裝,更包括: 從該佈線層延伸到該導熱及/或導電基板的第一通孔,其中該第—通孔 適合於與第一電壓發生電性通信; 從該佈線層延伸到該導熱及/或導電基板的第二通孔,其中該第二通孔 適合於與第二電壓發生電性通信;以及 適合於接收焊料並耦接到該佈線層的鍍層。 29 1343102 12. 如申請專利範圍第11項之熱加強式積體電路封裝,更包括 ,接到4導熱及/或導電基板的電容器,其中該電容⑽第__端子與該 第-通孔發生電性通信’並域電容器的第二端子與該第二通孔發生 電性通信。 13. 如申μ專利範圍第1〇項之熱加強式積體電路封裝,其中 該導熱及/或導電基板包括銅基板。 '、 14. 如申請專利範圍第1G項之熱加強式積體電路封裝,其令 該包封材料包括介電材料。 15·如申請專利範圍第14項之熱加強式積體電路封裝,其中 該介電材料包括環氧樹脂。 八 16‘如申叫專利範圍第1〇項之熱加強式積體電路封裝,其中 該晶粒連接轉從由銅姨和金突起組成的群財所選出。 17. 如申請專利範_⑴項之熱加強式積體電路封裝,其中 〇玄包封從4半導體晶粒的第二表面跨财丨該佈線層。 18. —種積體電路封裝,包括: 多個晶粒連接器,形成在該半導體晶粒的第二表面上:形成在該佈線表面上的錯導電跡線,其中該多條導電 條的特徵在於:與該多個晶粒連接器之—發生電性传 半導體晶粒’該轉體晶純純附到導熱及/或導f基板的第一表 面,以及與該第一表面相對的第二表面; 電跡線中的每一 性通信的第一部 5 30 1343102 * 分’以及與封裝連接ϋ發生電性通信的第二部分。 19. 如申請專利範圍第18項之積體電路封裝,更包括 柄接到該佈線表面的焊料遮罩層D 20. 如申請專利範圍第丨8項之積體電路封裝,其中 5亥導熱及/或導電基板包括金屬基板。 21. 如申請專利範圍第2〇項之積體電路封裝,其中 ^ 5玄金屬基板包括銅板。 22. 如申請專利範圍第π項之積體電路封裝,其中 該包封材料包括介電材料。 23. 如申請專利範圍第22項之積體電路封裝,其中 該介電材料包括環氧樹脂。 24. 如申請專利範圍第18項之積體電路封裝,其中 _ #佈線表面是藉由使㈣磨過程去_包封材料的—部分而形成。 25. 如申請專利範圍第18項之積體電路封裝,其中 該封裝連接器包括焊料球。 26. 如申請專利範圍第W項之積體電路封裝,更包括: 形成在該佈線表面之上的絕緣層;以及 开ϋ純緣層上的多條第二級導電跡線’以形成具有多層佈線的積 體電路封裝。 27· -種加Ji熱加強式積體電路封裝之方法 ,其包括以下步驟: 31 1343102 • 在導熱及/或導電基板的表面上形成晶粒裝附材料層; 將半導體晶粒的第-表©安制該晶粒裝崎料層,其t該半導體晶 粒由多個側表面、以及與該第一表面相對的第二表面所界定; 形成與設置在該半導體晶粒的第二表面上之多個晶㈣電性通信的多 個晶粒連接器; 形成包封層,該包封層的特徵在於、位於該導熱及/或導電基板附近的 第一包封表面、以及與該第一包封表面相對的第二包封表面, 其中,該包封層係一單一單元材料,連續沉積以包圍該半導體 晶粒的多個側表面,以及設置在該半導體晶粒的第二表面的第 w 一部分之上;以及 在該第二包封表面上形成佈線層。 28.如申請專利範圍第27項之方法,更包括 形成攸s玄佈線層延伸到該導熱及/或導電基板的第一通孔,其中該第一 通孔適合與第一電壓電性通信; 形成從該佈線層延伸到該導熱及/或導電基板的第二通孔,其中該第二 通孔適合與第二電壓電性通信;以及 形成耦接到該佈線層並且適合於接收焊料的鍍層。 馨I 29.如申請專利範圍第28項之方法,更包括 安裝耦接到該導熱及/或導電基板的電容器,其中該電容器的第一端子 與該第一通孔電性通信,以及該電容器的第二端子與該第二通孔電性 通信。 30.如申請專利範圍第27項之方法,其中 該導熱及/或導電基板包括銅基板。 31·如申請專利範圍第27項之方法,其中 s玄包封材料包括介電材料。 32 1343102 32. 如申請專利範圍第31項之方法,其中 該介電材料包括環氧樹脂。 33. 如申請專利範圍第27項之方法,其中 該晶粒連接器是從由銅突起和金突起所組成的群組中選出。 34. 如申請專利範圍第27項之方法,其中 該包封層從該半導體晶粒的封裝表面跨越到該佈線層。 S 33 1343102 827- f?年"月 >)日修(更)正替扣頁 820 高畫質電視 828 量储置 容料裝 大資存 纪铯想 829 826 822 iL f 網路介m ιι l·» FDD信珑 處理和/或 控制電路 頸示器 第8C圖 .-830 832輸出 感測器 輸出裝置 第8D圖 840 1343102851 864 -852 ”年"月%修(更)正替換頁 :..-850 量健置 容料裝 大資存 行動電話 一 866 記愫體 η _/ r 網路介面 信號處理 6 7或 控制電路 麥克風 音頻輸出 顯示器 輸入裝置 856 -858 -860 -862 第8E圖,880 890、 機上盒 量儲置 容料裝 大資存 894 記憶體第8F圖 1343102 ,\ J — II » . I Ml. — — , M年If月y曰修(更)正替換頁 872第8G圖 Vo IP電栝 885\U-Fi通信棋组 886 Γ 839 -► 信號處理 - 和/或 控制電路 -n Μ- ► 麥克風 掙示器 輸入裝置 音頻輸出 887 •889 891 ^892 第8H圖
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WO2007089723A3 (en) | 2008-06-05 |
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CN101416303A (zh) | 2009-04-22 |
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CN101416303B (zh) | 2012-06-20 |
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US8900932B2 (en) | 2014-12-02 |
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US7675157B2 (en) | 2010-03-09 |
US8357568B2 (en) | 2013-01-22 |
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