TWI341337B - Powder metallurgy sputtering targets and methods of producing same - Google Patents
Powder metallurgy sputtering targets and methods of producing sameInfo
- Publication number
- TWI341337B TWI341337B TW093100254A TW93100254A TWI341337B TW I341337 B TWI341337 B TW I341337B TW 093100254 A TW093100254 A TW 093100254A TW 93100254 A TW93100254 A TW 93100254A TW I341337 B TWI341337 B TW I341337B
- Authority
- TW
- Taiwan
- Prior art keywords
- methods
- powder metallurgy
- producing same
- sputtering targets
- metallurgy sputtering
- Prior art date
Links
- 238000004663 powder metallurgy Methods 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
- 238000005477 sputtering target Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/145—Chemical treatment, e.g. passivation or decarburisation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/80—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12049—Nonmetal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12104—Particles discontinuous
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43846503P | 2003-01-07 | 2003-01-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200502435A TW200502435A (en) | 2005-01-16 |
| TWI341337B true TWI341337B (en) | 2011-05-01 |
Family
ID=32713330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093100254A TWI341337B (en) | 2003-01-07 | 2004-01-06 | Powder metallurgy sputtering targets and methods of producing same |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7067197B2 (enExample) |
| EP (1) | EP1585844B1 (enExample) |
| JP (1) | JP5006030B2 (enExample) |
| TW (1) | TWI341337B (enExample) |
| WO (1) | WO2004064114A2 (enExample) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US7067849B2 (en) * | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
| US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US8535396B2 (en) | 2002-08-09 | 2013-09-17 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
| US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
| US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
| US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
| US7067197B2 (en) * | 2003-01-07 | 2006-06-27 | Cabot Corporation | Powder metallurgy sputtering targets and methods of producing same |
| US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
| US20050155677A1 (en) * | 2004-01-08 | 2005-07-21 | Wickersham Charles E.Jr. | Tantalum and other metals with (110) orientation |
| WO2006055513A2 (en) * | 2004-11-18 | 2006-05-26 | Honeywell International Inc. | Methods of forming three-dimensional pvd targets |
| US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
| WO2006063308A2 (en) | 2004-12-08 | 2006-06-15 | Symmorphix, Inc. | DEPOSITION OF LICoO2 |
| JP4936511B2 (ja) * | 2005-03-31 | 2012-05-23 | 富士フイルム株式会社 | 駆動装置、撮影装置及び携帯電話 |
| CN100439559C (zh) * | 2005-04-08 | 2008-12-03 | 光洋应用材料科技股份有限公司 | 钽基化合物的陶瓷溅镀靶材及其应用方法和制备方法 |
| CA2606478C (en) * | 2005-05-05 | 2013-10-08 | H.C. Starck Gmbh | Method for coating a substrate surface and coated product |
| CN101368262B (zh) * | 2005-05-05 | 2012-06-06 | H.C.施塔克有限公司 | 向表面施加涂层的方法 |
| US7708868B2 (en) * | 2005-07-08 | 2010-05-04 | Tosoh Smd, Inc. | Variable thickness plate for forming variable wall thickness physical vapor deposition target |
| CN101374611B (zh) | 2006-03-07 | 2015-04-08 | 卡伯特公司 | 制备变形金属制品的方法 |
| US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
| US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
| US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
| US8197781B2 (en) * | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
| CA2669052C (en) * | 2006-11-07 | 2013-11-26 | Stefan Zimmermann | Method for coating a substrate and coated product |
| US7776166B2 (en) * | 2006-12-05 | 2010-08-17 | Praxair Technology, Inc. | Texture and grain size controlled hollow cathode magnetron targets and method of manufacture |
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| US20080210555A1 (en) * | 2007-03-01 | 2008-09-04 | Heraeus Inc. | High density ceramic and cermet sputtering targets by microwave sintering |
| US20080229880A1 (en) * | 2007-03-23 | 2008-09-25 | Reading Alloys, Inc. | Production of high-purity tantalum flake powder |
| US20080233420A1 (en) * | 2007-03-23 | 2008-09-25 | Mccracken Colin G | Production of high-purity tantalum flake powder |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| JP5389802B2 (ja) * | 2007-08-06 | 2014-01-15 | エイチ.シー. スターク インコーポレイテッド | 組織の均一性が改善された高融点金属プレート |
| US8250895B2 (en) * | 2007-08-06 | 2012-08-28 | H.C. Starck Inc. | Methods and apparatus for controlling texture of plates and sheets by tilt rolling |
| US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| WO2009086038A1 (en) | 2007-12-21 | 2009-07-09 | Infinite Power Solutions, Inc. | Method for sputter targets for electrolyte films |
| US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
| EP2229706B1 (en) | 2008-01-11 | 2014-12-24 | Infinite Power Solutions, Inc. | Thin film encapsulation for thin film batteries and other devices |
| DE102008064648A1 (de) * | 2008-01-23 | 2010-05-20 | Tradium Gmbh | Reaktionsgefäß zur Herstellung von Metallpulvern |
| ES2302663B2 (es) * | 2008-02-28 | 2009-02-16 | Universidad Politecnica De Madrid | Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia. |
| WO2009124191A2 (en) | 2008-04-02 | 2009-10-08 | Infinite Power Solutions, Inc. | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
| JP5172465B2 (ja) | 2008-05-20 | 2013-03-27 | 三菱電機株式会社 | 放電表面処理用電極の製造方法および放電表面処理用電極 |
| EP2319101B1 (en) | 2008-08-11 | 2015-11-04 | Sapurast Research LLC | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| KR101613671B1 (ko) | 2008-09-12 | 2016-04-19 | 사푸라스트 리써치 엘엘씨 | 전자기 에너지에 의해 데이터 통신을 하는 통합 도전성 표면을 가진 에너지 장치 및 그 통신 방법 |
| US8043655B2 (en) * | 2008-10-06 | 2011-10-25 | H.C. Starck, Inc. | Low-energy method of manufacturing bulk metallic structures with submicron grain sizes |
| WO2010042594A1 (en) | 2008-10-08 | 2010-04-15 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
| CN102576828B (zh) | 2009-09-01 | 2016-04-20 | 萨普拉斯特研究有限责任公司 | 具有集成薄膜电池的印刷电路板 |
| KR101930561B1 (ko) | 2010-06-07 | 2018-12-18 | 사푸라스트 리써치 엘엘씨 | 재충전 가능한 고밀도 전기 화학 장치 |
| EP2604719B1 (en) * | 2010-08-09 | 2020-11-11 | JX Nippon Mining & Metals Corporation | Tantalum spattering target |
| JP5912559B2 (ja) | 2011-03-30 | 2016-04-27 | 田中貴金属工業株式会社 | FePt−C系スパッタリングターゲットの製造方法 |
| JP5758204B2 (ja) * | 2011-06-07 | 2015-08-05 | 日本発條株式会社 | チタン合金部材およびその製造方法 |
| US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
| TWI515316B (zh) | 2012-01-13 | 2016-01-01 | 田中貴金屬工業股份有限公司 | FePt sputtering target and its manufacturing method |
| CN103084567B (zh) * | 2012-11-25 | 2015-06-24 | 安徽普源分离机械制造有限公司 | 一种膜片阀阀杆的粉末冶金制备方法 |
| JP6573629B2 (ja) * | 2014-04-11 | 2019-09-11 | ハー ツェー シュタルク インコーポレイテッドH.C. Starck, Inc. | 高純度耐熱金属粉体、及び無秩序な組織を有し得るスパッタリングターゲットにおけるその使用 |
| KR102074047B1 (ko) * | 2015-05-22 | 2020-02-05 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
| EP3339469A4 (en) * | 2016-03-25 | 2019-03-27 | JX Nippon Mining & Metals Corporation | TI-TA ALLOY SPUTTER TARGET AND MANUFACTURING METHOD THEREFOR |
| CN106111993B (zh) * | 2016-07-28 | 2018-05-04 | 西北有色金属研究院 | 一种粉末冶金法制备铌合金板材的方法 |
| WO2018197612A1 (en) | 2017-04-27 | 2018-11-01 | Basf Se | Preparation of powders of nitrided inorganic materials |
| GB201803142D0 (en) | 2018-02-27 | 2018-04-11 | Rolls Royce Plc | A method of manufacturing an austenitc iron alloy |
| CN112105471B (zh) | 2018-03-05 | 2023-07-11 | 全球先进金属美国股份有限公司 | 含有球形粉末的阳极和电容器 |
| CN111801184A (zh) * | 2018-03-05 | 2020-10-20 | 全球先进金属美国股份有限公司 | 粉末冶金溅射靶和其生产方法 |
| CA3227568A1 (en) | 2018-03-05 | 2020-02-06 | Global Advanced Metals Usa, Inc. | Spherical tantalum powder, products containing the same, and methods of making the same |
| RU2680082C1 (ru) * | 2018-05-31 | 2019-02-15 | Федеральное государственное бюджетное учреждение науки Федеральный исследовательский центр "Кольский научный центр Российской академии наук" (ФИЦ КНЦ РАН) | Способ изготовления анода конденсатора на основе вентильного металла |
| US11289276B2 (en) | 2018-10-30 | 2022-03-29 | Global Advanced Metals Japan K.K. | Porous metal foil and capacitor anodes made therefrom and methods of making same |
| US12020916B2 (en) | 2019-03-26 | 2024-06-25 | JX Metals Corpo tion | Niobium sputtering target |
| US11725270B2 (en) * | 2020-01-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target design and semiconductor devices formed using the same |
| CN111621753B (zh) * | 2020-07-29 | 2020-11-17 | 江苏集萃先进金属材料研究所有限公司 | 靶材坯料及其制作方法 |
| CN113981390A (zh) * | 2021-10-29 | 2022-01-28 | 宁波江丰半导体科技有限公司 | 一种高纯低氧钽靶材的制备方法 |
| TW202513813A (zh) * | 2023-06-29 | 2025-04-01 | 美商萬騰榮公司 | 用於濺鍍靶材的金屬和金屬合金 |
| TW202544262A (zh) * | 2023-12-15 | 2025-11-16 | 美商萬騰榮公司 | 耐火金屬板 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2020131A6 (es) * | 1989-06-26 | 1991-07-16 | Cabot Corp | Procedimiento para la produccion de polvos de tantalo, niobio y sus aleaciones. |
| US5242481A (en) * | 1989-06-26 | 1993-09-07 | Cabot Corporation | Method of making powders and products of tantalum and niobium |
| EP0534441B1 (en) * | 1991-09-27 | 1997-12-10 | Hitachi Metals, Ltd. | Target for reactive sputtering and film-forming method using the target |
| US5415829A (en) * | 1992-12-28 | 1995-05-16 | Nikko Kyodo Co., Ltd. | Sputtering target |
| EP0665302B1 (en) | 1994-01-26 | 2000-05-03 | H.C. Starck, INC. | Nitriding tantalum powder |
| US5863398A (en) | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
| JP4012287B2 (ja) * | 1997-08-27 | 2007-11-21 | 株式会社ブリヂストン | スパッタリングターゲット盤 |
| US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| JP5053471B2 (ja) | 1999-05-11 | 2012-10-17 | 株式会社東芝 | 配線膜の製造方法と電子部品の製造方法 |
| JP2001020065A (ja) * | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
| US6521173B2 (en) * | 1999-08-19 | 2003-02-18 | H.C. Starck, Inc. | Low oxygen refractory metal powder for powder metallurgy |
| US6261337B1 (en) * | 1999-08-19 | 2001-07-17 | Prabhat Kumar | Low oxygen refractory metal powder for powder metallurgy |
| US6342133B2 (en) * | 2000-03-14 | 2002-01-29 | Novellus Systems, Inc. | PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter |
| WO2001096620A2 (en) | 2000-05-22 | 2001-12-20 | Cabot Corporation | High purity niobium and products containing the same, and methods of making the same |
| US6887356B2 (en) * | 2000-11-27 | 2005-05-03 | Cabot Corporation | Hollow cathode target and methods of making same |
| US7067197B2 (en) * | 2003-01-07 | 2006-06-27 | Cabot Corporation | Powder metallurgy sputtering targets and methods of producing same |
-
2004
- 2004-01-06 US US10/752,270 patent/US7067197B2/en not_active Expired - Lifetime
- 2004-01-06 TW TW093100254A patent/TWI341337B/zh not_active IP Right Cessation
- 2004-01-07 EP EP04700582.2A patent/EP1585844B1/en not_active Expired - Lifetime
- 2004-01-07 WO PCT/US2004/000270 patent/WO2004064114A2/en not_active Ceased
- 2004-01-07 JP JP2006500812A patent/JP5006030B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-10 US US11/431,259 patent/US7601296B2/en not_active Expired - Fee Related
-
2009
- 2009-09-02 US US12/552,386 patent/US8168118B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1585844A2 (en) | 2005-10-19 |
| EP1585844B1 (en) | 2016-08-24 |
| US20040141870A1 (en) | 2004-07-22 |
| US7601296B2 (en) | 2009-10-13 |
| WO2004064114A3 (en) | 2005-01-20 |
| TW200502435A (en) | 2005-01-16 |
| JP5006030B2 (ja) | 2012-08-22 |
| US20060201583A1 (en) | 2006-09-14 |
| US7067197B2 (en) | 2006-06-27 |
| JP2006517612A (ja) | 2006-07-27 |
| US20090324439A1 (en) | 2009-12-31 |
| WO2004064114A2 (en) | 2004-07-29 |
| US8168118B2 (en) | 2012-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI341337B (en) | Powder metallurgy sputtering targets and methods of producing same | |
| AU2003251918A1 (en) | Copper sputtering targets and methods of forming copper sputtering targets | |
| SG137678A1 (en) | Ag-bi-base alloy sputtering target, and method for producing the same | |
| IL173056A0 (en) | Method for the production of fine metal powder,alloy powder and composite powder | |
| SG118219A1 (en) | Electronic device method of manufacture of the same and sputtering target | |
| AU2003253924A1 (en) | Methods of making elemental materials and alloys | |
| AU2003247927A1 (en) | Composite metal article and method of making | |
| GB2390375B (en) | Valve metal powders and process for producing them | |
| GB2412116B (en) | Reactive compositions including metal and methods of forming same | |
| AU2002241351A1 (en) | Magnesium alloy material and method of manufacturing the alloy material | |
| AU2003259791A1 (en) | Preparation of metal amide complexes | |
| EP1449935A4 (en) | SPRAY TARGET AND METHOD OF MANUFACTURING THE SAME | |
| IL165261A0 (en) | High purity ferromagnetic sputer targets and method of manufacture | |
| AU2003270305A1 (en) | System and method of producing metals and alloys | |
| EP1661647A4 (en) | Fe-Ni-Mo FLAKY METAL SOFT MAGNETIC POWDER AND MAGNETIC COMPOSITE MATERIAL CONTAINING SOFT MAGNETIC POWDER | |
| GB2409467B (en) | Wear-resistant mechanical component and method of producing the same | |
| AU2003232436A1 (en) | Synthesis of iron-based alloy nanoparticles | |
| AU2003247596A1 (en) | Superfine powders and methods of manufacture of said powders | |
| AU2003263082A1 (en) | System and method of producing metals and alloys | |
| AU2003294684A8 (en) | Ketoprofen compositions and methods of making them | |
| AU2002366234A1 (en) | Grain refinement of alloys using magnetic field processing | |
| AU2003275047A1 (en) | Semi-solid metal casting process and product thereof | |
| AU2003293908A1 (en) | Powder metallurgical production of a component having porous and non porous parts | |
| AU2003211455A1 (en) | Hard metal alloy member and method for manufacture thereof | |
| PL1547473T3 (pl) | Kompozycja zawierająca warzywa z rodzaju Capsicum [papryka] oraz sposobu jej wytwarzania |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |