TWI341337B - Powder metallurgy sputtering targets and methods of producing same - Google Patents

Powder metallurgy sputtering targets and methods of producing same

Info

Publication number
TWI341337B
TWI341337B TW093100254A TW93100254A TWI341337B TW I341337 B TWI341337 B TW I341337B TW 093100254 A TW093100254 A TW 093100254A TW 93100254 A TW93100254 A TW 93100254A TW I341337 B TWI341337 B TW I341337B
Authority
TW
Taiwan
Prior art keywords
methods
powder metallurgy
producing same
sputtering targets
metallurgy sputtering
Prior art date
Application number
TW093100254A
Other languages
English (en)
Chinese (zh)
Other versions
TW200502435A (en
Inventor
Christopher A Michaluk
Shi Yuan
James Maguire
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of TW200502435A publication Critical patent/TW200502435A/zh
Application granted granted Critical
Publication of TWI341337B publication Critical patent/TWI341337B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14—Treatment of metallic powder
    • B22F1/145—Chemical treatment, e.g. passivation or decarburisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049—Nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12063—Nonparticulate metal component
    • Y10T428/12104—Particles discontinuous

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW093100254A 2003-01-07 2004-01-06 Powder metallurgy sputtering targets and methods of producing same TWI341337B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43846503P 2003-01-07 2003-01-07

Publications (2)

Publication Number Publication Date
TW200502435A TW200502435A (en) 2005-01-16
TWI341337B true TWI341337B (en) 2011-05-01

Family

ID=32713330

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093100254A TWI341337B (en) 2003-01-07 2004-01-06 Powder metallurgy sputtering targets and methods of producing same

Country Status (5)

Country Link
US (3) US7067197B2 (cg-RX-API-DMAC7.html)
EP (1) EP1585844B1 (cg-RX-API-DMAC7.html)
JP (1) JP5006030B2 (cg-RX-API-DMAC7.html)
TW (1) TWI341337B (cg-RX-API-DMAC7.html)
WO (1) WO2004064114A2 (cg-RX-API-DMAC7.html)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
TWI341337B (en) * 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
WO2005071135A2 (en) * 2004-01-08 2005-08-04 Cabot Corporation Tantalum and other metals with (110) orientation
JP2008520838A (ja) * 2004-11-18 2008-06-19 ハネウェル・インターナショナル・インコーポレーテッド 三次元pvdターゲットの形成方法
KR101127370B1 (ko) 2004-12-08 2012-03-29 인피니트 파워 솔루션스, 인크. LiCoO2의 증착
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
JP4936511B2 (ja) * 2005-03-31 2012-05-23 富士フイルム株式会社 駆動装置、撮影装置及び携帯電話
CN100439559C (zh) * 2005-04-08 2008-12-03 光洋应用材料科技股份有限公司 钽基化合物的陶瓷溅镀靶材及其应用方法和制备方法
US8802191B2 (en) * 2005-05-05 2014-08-12 H. C. Starck Gmbh Method for coating a substrate surface and coated product
CA2607091C (en) * 2005-05-05 2014-08-12 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
EE05493B1 (et) * 2006-03-07 2011-12-15 Cabot Corporation Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US8062708B2 (en) 2006-09-29 2011-11-22 Infinite Power Solutions, Inc. Masking of and material constraint for depositing battery layers on flexible substrates
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
CN101730757B (zh) * 2006-11-07 2015-09-30 H.C.施塔克有限公司 涂覆基材表面的方法和经过涂覆的产品
US8197781B2 (en) * 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US20080210555A1 (en) * 2007-03-01 2008-09-04 Heraeus Inc. High density ceramic and cermet sputtering targets by microwave sintering
US20080233420A1 (en) * 2007-03-23 2008-09-25 Mccracken Colin G Production of high-purity tantalum flake powder
US20080229880A1 (en) * 2007-03-23 2008-09-25 Reading Alloys, Inc. Production of high-purity tantalum flake powder
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP5389802B2 (ja) * 2007-08-06 2014-01-15 エイチ.シー. スターク インコーポレイテッド 組織の均一性が改善された高融点金属プレート
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
TWI441937B (zh) 2007-12-21 2014-06-21 Infinite Power Solutions Inc 形成用於電解質薄膜之濺鍍靶材的方法
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
KR101606183B1 (ko) 2008-01-11 2016-03-25 사푸라스트 리써치 엘엘씨 박막 배터리 및 기타 소자를 위한 박막 캡슐화
DE102008005781A1 (de) * 2008-01-23 2009-07-30 Tradium Gmbh Phlegmatisierte Metallpulver oder Legierungspulver und Verfahren bzw. Reaktionsgefäß zu deren Herstellung
ES2302663B2 (es) * 2008-02-28 2009-02-16 Universidad Politecnica De Madrid Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia.
CN101983469B (zh) 2008-04-02 2014-06-04 无穷动力解决方案股份有限公司 与能量采集关联的储能装置的无源过电压/欠电压控制和保护
JP5172465B2 (ja) 2008-05-20 2013-03-27 三菱電機株式会社 放電表面処理用電極の製造方法および放電表面処理用電極
KR20110058793A (ko) 2008-08-11 2011-06-01 인피니트 파워 솔루션스, 인크. 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
WO2010030743A1 (en) 2008-09-12 2010-03-18 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
WO2010042594A1 (en) 2008-10-08 2010-04-15 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
KR101792287B1 (ko) 2009-09-01 2017-10-31 사푸라스트 리써치 엘엘씨 집적된 박막 배터리를 갖는 인쇄 회로 보드
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
WO2012020662A1 (ja) * 2010-08-09 2012-02-16 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット
JP5912559B2 (ja) 2011-03-30 2016-04-27 田中貴金属工業株式会社 FePt−C系スパッタリングターゲットの製造方法
JP5758204B2 (ja) 2011-06-07 2015-08-05 日本発條株式会社 チタン合金部材およびその製造方法
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
TWI504768B (zh) 2012-01-13 2015-10-21 田中貴金屬工業股份有限公司 FePt sputtering target and its manufacturing method
CN103084567B (zh) * 2012-11-25 2015-06-24 安徽普源分离机械制造有限公司 一种膜片阀阀杆的粉末冶金制备方法
JP6573629B2 (ja) * 2014-04-11 2019-09-11 ハー ツェー シュタルク インコーポレイテッドH.C. Starck, Inc. 高純度耐熱金属粉体、及び無秩序な組織を有し得るスパッタリングターゲットにおけるその使用
JP6293928B2 (ja) * 2015-05-22 2018-03-14 Jx金属株式会社 タンタルスパッタリングターゲット及びその製造方法
WO2017164301A1 (ja) * 2016-03-25 2017-09-28 Jx金属株式会社 Ti-Ta合金スパッタリングターゲット及びその製造方法
CN106111993B (zh) * 2016-07-28 2018-05-04 西北有色金属研究院 一种粉末冶金法制备铌合金板材的方法
WO2018197612A1 (en) 2017-04-27 2018-11-01 Basf Se Preparation of powders of nitrided inorganic materials
GB201803142D0 (en) 2018-02-27 2018-04-11 Rolls Royce Plc A method of manufacturing an austenitc iron alloy
US12221678B2 (en) 2018-03-05 2025-02-11 Global Advanced Metals Usa, Inc. Powder metallurgy sputtering targets and methods of producing same
KR102503996B1 (ko) 2018-03-05 2023-03-02 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. 구형 탄탈럼 분말, 그를 함유하는 생성물, 및 그의 제조 방법
IL318772B1 (en) 2018-03-05 2026-06-01 Global Advanced Metals Usa Inc Anodes containing spherical powder and capacitors
RU2680082C1 (ru) * 2018-05-31 2019-02-15 Федеральное государственное бюджетное учреждение науки Федеральный исследовательский центр "Кольский научный центр Российской академии наук" (ФИЦ КНЦ РАН) Способ изготовления анода конденсатора на основе вентильного металла
US11289276B2 (en) 2018-10-30 2022-03-29 Global Advanced Metals Japan K.K. Porous metal foil and capacitor anodes made therefrom and methods of making same
WO2020195121A1 (ja) * 2019-03-26 2020-10-01 Jx金属株式会社 ニオブスパッタリングターゲット
US11725270B2 (en) * 2020-01-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target design and semiconductor devices formed using the same
CN111621753B (zh) * 2020-07-29 2020-11-17 江苏集萃先进金属材料研究所有限公司 靶材坯料及其制作方法
CN113981390A (zh) * 2021-10-29 2022-01-28 宁波江丰半导体科技有限公司 一种高纯低氧钽靶材的制备方法
TW202513813A (zh) * 2023-06-29 2025-04-01 美商萬騰榮公司 用於濺鍍靶材的金屬和金屬合金
TW202544262A (zh) * 2023-12-15 2025-11-16 美商萬騰榮公司 耐火金屬板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242481A (en) 1989-06-26 1993-09-07 Cabot Corporation Method of making powders and products of tantalum and niobium
ES2020131A6 (es) * 1989-06-26 1991-07-16 Cabot Corp Procedimiento para la produccion de polvos de tantalo, niobio y sus aleaciones.
EP0534441B1 (en) * 1991-09-27 1997-12-10 Hitachi Metals, Ltd. Target for reactive sputtering and film-forming method using the target
US5415829A (en) 1992-12-28 1995-05-16 Nikko Kyodo Co., Ltd. Sputtering target
EP0665302B1 (en) 1994-01-26 2000-05-03 H.C. Starck, INC. Nitriding tantalum powder
US5863398A (en) 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
JP4012287B2 (ja) 1997-08-27 2007-11-21 株式会社ブリヂストン スパッタリングターゲット盤
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP5053471B2 (ja) 1999-05-11 2012-10-17 株式会社東芝 配線膜の製造方法と電子部品の製造方法
JP2001020065A (ja) 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6261337B1 (en) 1999-08-19 2001-07-17 Prabhat Kumar Low oxygen refractory metal powder for powder metallurgy
US6521173B2 (en) 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6342133B2 (en) * 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
ATE412782T1 (de) 2000-05-22 2008-11-15 Cabot Corp Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
TWI341337B (en) * 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same

Also Published As

Publication number Publication date
US7067197B2 (en) 2006-06-27
US20090324439A1 (en) 2009-12-31
JP2006517612A (ja) 2006-07-27
JP5006030B2 (ja) 2012-08-22
TW200502435A (en) 2005-01-16
EP1585844A2 (en) 2005-10-19
WO2004064114A3 (en) 2005-01-20
US20040141870A1 (en) 2004-07-22
EP1585844B1 (en) 2016-08-24
US7601296B2 (en) 2009-10-13
WO2004064114A2 (en) 2004-07-29
US8168118B2 (en) 2012-05-01
US20060201583A1 (en) 2006-09-14

Similar Documents

Publication Publication Date Title
AU2003251918A1 (en) Copper sputtering targets and methods of forming copper sputtering targets
SG137678A1 (en) Ag-bi-base alloy sputtering target, and method for producing the same
IL173056A0 (en) Method for the production of fine metal powder,alloy powder and composite powder
AU2003259792A1 (en) Preparation of metal complexes
SG118219A1 (en) Electronic device method of manufacture of the same and sputtering target
IL165251A0 (en) Powder compaction and enrobing
AU2003253924A1 (en) Methods of making elemental materials and alloys
AU2003247927A1 (en) Composite metal article and method of making
GB2390375B (en) Valve metal powders and process for producing them
EP1380668A4 (en) MANGANESE ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME
GB2412116B (en) Reactive compositions including metal and methods of forming same
AU2002241351A1 (en) Magnesium alloy material and method of manufacturing the alloy material
AU2003259791A1 (en) Preparation of metal amide complexes
EP1449935A4 (en) SPRAY TARGET AND METHOD OF MANUFACTURING THE SAME
IL165261A0 (en) High purity ferromagnetic sputer targets and method of manufacture
AU2003270305A1 (en) System and method of producing metals and alloys
AU2003247596A1 (en) Superfine powders and methods of manufacture of said powders
GB2409467B (en) Wear-resistant mechanical component and method of producing the same
AU2003232436A1 (en) Synthesis of iron-based alloy nanoparticles
AU2003263082A1 (en) System and method of producing metals and alloys
AU2003294684A1 (en) Ketoprofen compositions and methods of making them
AU2002366234A1 (en) Grain refinement of alloys using magnetic field processing
AU2003275047A1 (en) Semi-solid metal casting process and product thereof
AU2003293908A1 (en) Powder metallurgical production of a component having porous and non porous parts
AU2003211455A1 (en) Hard metal alloy member and method for manufacture thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees