TWI339414B - Discriminative soi with oxide holes underneath dc source/drain - Google Patents
Discriminative soi with oxide holes underneath dc source/drain Download PDFInfo
- Publication number
- TWI339414B TWI339414B TW094100107A TW94100107A TWI339414B TW I339414 B TWI339414 B TW I339414B TW 094100107 A TW094100107 A TW 094100107A TW 94100107 A TW94100107 A TW 94100107A TW I339414 B TWI339414 B TW I339414B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- soi
- region
- substrate
- germanium
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 88
- 238000009792 diffusion process Methods 0.000 claims description 50
- 229910052732 germanium Inorganic materials 0.000 claims description 46
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910003811 SiGeC Inorganic materials 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- 239000013590 bulk material Substances 0.000 claims 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 2
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 235000020094 liqueur Nutrition 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/754,320 US6958516B2 (en) | 2004-01-08 | 2004-01-08 | Discriminative SOI with oxide holes underneath DC source/drain |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200524047A TW200524047A (en) | 2005-07-16 |
| TWI339414B true TWI339414B (en) | 2011-03-21 |
Family
ID=34739363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094100107A TWI339414B (en) | 2004-01-08 | 2005-01-03 | Discriminative soi with oxide holes underneath dc source/drain |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6958516B2 (enExample) |
| EP (1) | EP1706905A1 (enExample) |
| JP (1) | JP5527922B2 (enExample) |
| KR (1) | KR100956716B1 (enExample) |
| CN (1) | CN1906762A (enExample) |
| IL (1) | IL176686A (enExample) |
| TW (1) | TWI339414B (enExample) |
| WO (1) | WO2005069373A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7160788B2 (en) * | 2004-08-23 | 2007-01-09 | Micron Technology, Inc. | Methods of forming integrated circuits |
| US7202513B1 (en) | 2005-09-29 | 2007-04-10 | International Business Machines Corporation | Stress engineering using dual pad nitride with selective SOI device architecture |
| US7659172B2 (en) * | 2005-11-18 | 2010-02-09 | International Business Machines Corporation | Structure and method for reducing miller capacitance in field effect transistors |
| JP4867396B2 (ja) * | 2006-03-01 | 2012-02-01 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| US7482656B2 (en) * | 2006-06-01 | 2009-01-27 | International Business Machines Corporation | Method and structure to form self-aligned selective-SOI |
| US7795910B1 (en) | 2007-08-21 | 2010-09-14 | Marvell International Ltd. | Field-programmable gate array using charge-based nonvolatile memory |
| US8921190B2 (en) | 2008-04-08 | 2014-12-30 | International Business Machines Corporation | Field effect transistor and method of manufacture |
| US7989893B2 (en) * | 2008-08-28 | 2011-08-02 | International Business Machines Corporation | SOI body contact using E-DRAM technology |
| CN102064097B (zh) * | 2009-11-17 | 2012-11-07 | 中国科学院上海微系统与信息技术研究所 | 一种混晶材料的制备方法及用该材料制备的半导体器件 |
| CN101924138B (zh) * | 2010-06-25 | 2013-02-06 | 中国科学院上海微系统与信息技术研究所 | 防止浮体及自加热效应的mos器件结构及其制备方法 |
| CN101986435B (zh) * | 2010-06-25 | 2012-12-19 | 中国科学院上海微系统与信息技术研究所 | 防止浮体及自加热效应的mos器件结构的制造方法 |
| PT2446792E (pt) | 2010-10-29 | 2015-02-18 | Gruppo Cimbali Spa | Peça de extremidade substituível para uma boca de descarga de vapor de uma máquina de café |
| CN102214684B (zh) * | 2011-06-03 | 2012-10-10 | 清华大学 | 一种具有悬空源漏的半导体结构及其形成方法 |
| US9892910B2 (en) * | 2015-05-15 | 2018-02-13 | International Business Machines Corporation | Method and structure for forming a dense array of single crystalline semiconductor nanocrystals |
| US9722057B2 (en) * | 2015-06-23 | 2017-08-01 | Global Foundries Inc. | Bipolar junction transistors with a buried dielectric region in the active device region |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8006339A (nl) * | 1979-11-21 | 1981-06-16 | Hitachi Ltd | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
| JPS577161A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Mos semiconductor device |
| JPS59119723A (ja) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | 半導体装置の製造方法 |
| JPS61265859A (ja) * | 1985-05-20 | 1986-11-25 | Toshiba Corp | 相補型ｍｏｓ半導体装置 |
| US4683637A (en) * | 1986-02-07 | 1987-08-04 | Motorola, Inc. | Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing |
| US4810664A (en) * | 1986-08-14 | 1989-03-07 | Hewlett-Packard Company | Method for making patterned implanted buried oxide transistors and structures |
| JPH0794721A (ja) * | 1993-09-24 | 1995-04-07 | Nippon Steel Corp | 半導体装置及びその製造方法 |
| US5382818A (en) * | 1993-12-08 | 1995-01-17 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
| US5841126A (en) * | 1994-01-28 | 1998-11-24 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
| US5489792A (en) * | 1994-04-07 | 1996-02-06 | Regents Of The University Of California | Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility |
| US5583368A (en) | 1994-08-11 | 1996-12-10 | International Business Machines Corporation | Stacked devices |
| US5481126A (en) | 1994-09-27 | 1996-01-02 | Purdue Research Foundation | Semiconductor-on-insulator electronic devices having trench isolated monocrystalline active regions |
| DE4441901C2 (de) * | 1994-11-24 | 1998-07-02 | Siemens Ag | MOSFET auf SOI-Substrat und Verfahren zu dessen Herstellung |
| JPH08316335A (ja) * | 1995-05-18 | 1996-11-29 | Sony Corp | 半導体装置およびその製造方法 |
| US5712173A (en) | 1996-01-24 | 1998-01-27 | Advanced Micro Devices, Inc. | Method of making semiconductor device with self-aligned insulator |
| US5873364A (en) * | 1996-02-22 | 1999-02-23 | Kopelowicz; Alberto | Latex prophylactics |
| KR100226794B1 (ko) * | 1996-06-10 | 1999-10-15 | 김영환 | 모스펫 제조방법 |
| KR100281109B1 (ko) * | 1997-12-15 | 2001-03-02 | 김영환 | 에스오아이(soi)소자및그의제조방법 |
| US6214653B1 (en) * | 1999-06-04 | 2001-04-10 | International Business Machines Corporation | Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate |
| US6333532B1 (en) * | 1999-07-16 | 2001-12-25 | International Business Machines Corporation | Patterned SOI regions in semiconductor chips |
| KR100304713B1 (ko) | 1999-10-12 | 2001-11-02 | 윤종용 | 부분적인 ｓｏｉ 구조를 갖는 반도체소자 및 그 제조방법 |
| US6376286B1 (en) | 1999-10-20 | 2002-04-23 | Advanced Micro Devices, Inc. | Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer |
| US6429099B1 (en) * | 2000-01-05 | 2002-08-06 | International Business Machines Corporation | Implementing contacts for bodies of semiconductor-on-insulator transistors |
| US6287901B1 (en) | 2000-01-05 | 2001-09-11 | International Business Machines Corporation | Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors |
| KR100356577B1 (ko) | 2000-03-30 | 2002-10-18 | 삼성전자 주식회사 | 에스오아이 기판과 그 제조방법 및 이를 이용한에스오아이 엠오에스에프이티 |
| JP2002208696A (ja) * | 2001-01-11 | 2002-07-26 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP4352616B2 (ja) | 2001-02-05 | 2009-10-28 | 株式会社デンソー | 半導体力学量センサとその製造方法 |
| US6531375B1 (en) * | 2001-09-18 | 2003-03-11 | International Business Machines Corporation | Method of forming a body contact using BOX modification |
| US6936522B2 (en) | 2003-06-26 | 2005-08-30 | International Business Machines Corporation | Selective silicon-on-insulator isolation structure and method |
-
2004
- 2004-01-08 US US10/754,320 patent/US6958516B2/en not_active Expired - Lifetime
-
2005
- 2005-01-03 TW TW094100107A patent/TWI339414B/zh not_active IP Right Cessation
- 2005-01-06 WO PCT/EP2005/050039 patent/WO2005069373A1/en not_active Ceased
- 2005-01-06 CN CNA2005800015468A patent/CN1906762A/zh active Pending
- 2005-01-06 EP EP05701449A patent/EP1706905A1/en not_active Withdrawn
- 2005-01-06 JP JP2006548301A patent/JP5527922B2/ja not_active Expired - Fee Related
- 2005-01-06 KR KR1020067013487A patent/KR100956716B1/ko not_active Expired - Fee Related
-
2006
- 2006-07-03 IL IL176686A patent/IL176686A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20050151193A1 (en) | 2005-07-14 |
| TW200524047A (en) | 2005-07-16 |
| JP2007519239A (ja) | 2007-07-12 |
| IL176686A0 (en) | 2006-10-31 |
| CN1906762A (zh) | 2007-01-31 |
| KR20060123434A (ko) | 2006-12-01 |
| IL176686A (en) | 2010-12-30 |
| WO2005069373A1 (en) | 2005-07-28 |
| US6958516B2 (en) | 2005-10-25 |
| KR100956716B1 (ko) | 2010-05-06 |
| EP1706905A1 (en) | 2006-10-04 |
| JP5527922B2 (ja) | 2014-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |