CN1906762A - 在直流(dc)源/漏区下面具有氧化物孔的区别性的绝缘体上硅(soi) - Google Patents

在直流(dc)源/漏区下面具有氧化物孔的区别性的绝缘体上硅(soi) Download PDF

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Publication number
CN1906762A
CN1906762A CNA2005800015468A CN200580001546A CN1906762A CN 1906762 A CN1906762 A CN 1906762A CN A2005800015468 A CNA2005800015468 A CN A2005800015468A CN 200580001546 A CN200580001546 A CN 200580001546A CN 1906762 A CN1906762 A CN 1906762A
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CN
China
Prior art keywords
soi
substrate
silicon
region
selective
Prior art date
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Pending
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CNA2005800015468A
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English (en)
Chinese (zh)
Inventor
罗伯特·翁
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International Business Machines Corp
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International Business Machines Corp
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Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN1906762A publication Critical patent/CN1906762A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNA2005800015468A 2004-01-08 2005-01-06 在直流(dc)源/漏区下面具有氧化物孔的区别性的绝缘体上硅(soi) Pending CN1906762A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/754,320 US6958516B2 (en) 2004-01-08 2004-01-08 Discriminative SOI with oxide holes underneath DC source/drain
US10/754,320 2004-01-08

Publications (1)

Publication Number Publication Date
CN1906762A true CN1906762A (zh) 2007-01-31

Family

ID=34739363

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800015468A Pending CN1906762A (zh) 2004-01-08 2005-01-06 在直流(dc)源/漏区下面具有氧化物孔的区别性的绝缘体上硅(soi)

Country Status (8)

Country Link
US (1) US6958516B2 (enExample)
EP (1) EP1706905A1 (enExample)
JP (1) JP5527922B2 (enExample)
KR (1) KR100956716B1 (enExample)
CN (1) CN1906762A (enExample)
IL (1) IL176686A (enExample)
TW (1) TWI339414B (enExample)
WO (1) WO2005069373A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924138A (zh) * 2010-06-25 2010-12-22 中国科学院上海微系统与信息技术研究所 防止浮体及自加热效应的mos器件结构及其制备方法
CN102064097B (zh) * 2009-11-17 2012-11-07 中国科学院上海微系统与信息技术研究所 一种混晶材料的制备方法及用该材料制备的半导体器件
WO2012163048A1 (en) * 2011-06-03 2012-12-06 Tsinghua University Semiconductor structure and method for forming the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160788B2 (en) * 2004-08-23 2007-01-09 Micron Technology, Inc. Methods of forming integrated circuits
US7202513B1 (en) 2005-09-29 2007-04-10 International Business Machines Corporation Stress engineering using dual pad nitride with selective SOI device architecture
US7659172B2 (en) * 2005-11-18 2010-02-09 International Business Machines Corporation Structure and method for reducing miller capacitance in field effect transistors
JP4867396B2 (ja) * 2006-03-01 2012-02-01 セイコーエプソン株式会社 半導体装置及びその製造方法
US7482656B2 (en) * 2006-06-01 2009-01-27 International Business Machines Corporation Method and structure to form self-aligned selective-SOI
US7795910B1 (en) 2007-08-21 2010-09-14 Marvell International Ltd. Field-programmable gate array using charge-based nonvolatile memory
US8921190B2 (en) 2008-04-08 2014-12-30 International Business Machines Corporation Field effect transistor and method of manufacture
US7989893B2 (en) * 2008-08-28 2011-08-02 International Business Machines Corporation SOI body contact using E-DRAM technology
CN101986435B (zh) * 2010-06-25 2012-12-19 中国科学院上海微系统与信息技术研究所 防止浮体及自加热效应的mos器件结构的制造方法
PT2446792E (pt) 2010-10-29 2015-02-18 Gruppo Cimbali Spa Peça de extremidade substituível para uma boca de descarga de vapor de uma máquina de café
US9892910B2 (en) * 2015-05-15 2018-02-13 International Business Machines Corporation Method and structure for forming a dense array of single crystalline semiconductor nanocrystals
US9722057B2 (en) * 2015-06-23 2017-08-01 Global Foundries Inc. Bipolar junction transistors with a buried dielectric region in the active device region

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8006339A (nl) * 1979-11-21 1981-06-16 Hitachi Ltd Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
JPS59119723A (ja) * 1982-12-27 1984-07-11 Toshiba Corp 半導体装置の製造方法
JPS61265859A (ja) * 1985-05-20 1986-11-25 Toshiba Corp 相補型ｍｏｓ半導体装置
US4683637A (en) * 1986-02-07 1987-08-04 Motorola, Inc. Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing
US4810664A (en) * 1986-08-14 1989-03-07 Hewlett-Packard Company Method for making patterned implanted buried oxide transistors and structures
JPH0794721A (ja) * 1993-09-24 1995-04-07 Nippon Steel Corp 半導体装置及びその製造方法
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
US5841126A (en) * 1994-01-28 1998-11-24 California Institute Of Technology CMOS active pixel sensor type imaging system on a chip
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
US5583368A (en) 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US5481126A (en) 1994-09-27 1996-01-02 Purdue Research Foundation Semiconductor-on-insulator electronic devices having trench isolated monocrystalline active regions
DE4441901C2 (de) * 1994-11-24 1998-07-02 Siemens Ag MOSFET auf SOI-Substrat und Verfahren zu dessen Herstellung
JPH08316335A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置およびその製造方法
US5712173A (en) 1996-01-24 1998-01-27 Advanced Micro Devices, Inc. Method of making semiconductor device with self-aligned insulator
US5873364A (en) * 1996-02-22 1999-02-23 Kopelowicz; Alberto Latex prophylactics
KR100226794B1 (ko) * 1996-06-10 1999-10-15 김영환 모스펫 제조방법
KR100281109B1 (ko) * 1997-12-15 2001-03-02 김영환 에스오아이(soi)소자및그의제조방법
US6214653B1 (en) * 1999-06-04 2001-04-10 International Business Machines Corporation Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate
US6333532B1 (en) * 1999-07-16 2001-12-25 International Business Machines Corporation Patterned SOI regions in semiconductor chips
KR100304713B1 (ko) 1999-10-12 2001-11-02 윤종용 부분적인 ｓｏｉ 구조를 갖는 반도체소자 및 그 제조방법
US6376286B1 (en) 1999-10-20 2002-04-23 Advanced Micro Devices, Inc. Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer
US6429099B1 (en) * 2000-01-05 2002-08-06 International Business Machines Corporation Implementing contacts for bodies of semiconductor-on-insulator transistors
US6287901B1 (en) 2000-01-05 2001-09-11 International Business Machines Corporation Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors
KR100356577B1 (ko) 2000-03-30 2002-10-18 삼성전자 주식회사 에스오아이 기판과 그 제조방법 및 이를 이용한에스오아이 엠오에스에프이티
JP2002208696A (ja) * 2001-01-11 2002-07-26 Seiko Epson Corp 半導体装置及びその製造方法
JP4352616B2 (ja) 2001-02-05 2009-10-28 株式会社デンソー 半導体力学量センサとその製造方法
US6531375B1 (en) * 2001-09-18 2003-03-11 International Business Machines Corporation Method of forming a body contact using BOX modification
US6936522B2 (en) 2003-06-26 2005-08-30 International Business Machines Corporation Selective silicon-on-insulator isolation structure and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064097B (zh) * 2009-11-17 2012-11-07 中国科学院上海微系统与信息技术研究所 一种混晶材料的制备方法及用该材料制备的半导体器件
CN101924138A (zh) * 2010-06-25 2010-12-22 中国科学院上海微系统与信息技术研究所 防止浮体及自加热效应的mos器件结构及其制备方法
CN101924138B (zh) * 2010-06-25 2013-02-06 中国科学院上海微系统与信息技术研究所 防止浮体及自加热效应的mos器件结构及其制备方法
WO2012163048A1 (en) * 2011-06-03 2012-12-06 Tsinghua University Semiconductor structure and method for forming the same

Also Published As

Publication number Publication date
US20050151193A1 (en) 2005-07-14
TW200524047A (en) 2005-07-16
JP2007519239A (ja) 2007-07-12
TWI339414B (en) 2011-03-21
IL176686A0 (en) 2006-10-31
KR20060123434A (ko) 2006-12-01
IL176686A (en) 2010-12-30
WO2005069373A1 (en) 2005-07-28
US6958516B2 (en) 2005-10-25
KR100956716B1 (ko) 2010-05-06
EP1706905A1 (en) 2006-10-04
JP5527922B2 (ja) 2014-06-25

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Open date: 20070131