TWI327602B - Silver alloy reflective film, sputtering target therefor, and optical information recording medium using the same - Google Patents
Silver alloy reflective film, sputtering target therefor, and optical information recording medium using the same Download PDFInfo
- Publication number
- TWI327602B TWI327602B TW094120841A TW94120841A TWI327602B TW I327602 B TWI327602 B TW I327602B TW 094120841 A TW094120841 A TW 094120841A TW 94120841 A TW94120841 A TW 94120841A TW I327602 B TWI327602 B TW I327602B
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy
- reflective film
- atom
- film
- optical information
- Prior art date
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 96
- 230000003287 optical effect Effects 0.000 title claims abstract description 46
- 238000005477 sputtering target Methods 0.000 title claims abstract description 18
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 23
- 229910052738 indium Inorganic materials 0.000 claims abstract description 22
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 21
- 229910052718 tin Inorganic materials 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 238000010330 laser marking Methods 0.000 claims description 20
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 229910052797 bismuth Inorganic materials 0.000 claims description 11
- 229910052748 manganese Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 112
- 238000002844 melting Methods 0.000 description 19
- 230000008018 melting Effects 0.000 description 19
- 238000012360 testing method Methods 0.000 description 19
- 230000007797 corrosion Effects 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 230000007423 decrease Effects 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 230000007613 environmental effect Effects 0.000 description 6
- 229910052746 lanthanum Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000005275 alloying Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 229910017980 Ag—Sn Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000748 Gd alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/007—Arrangement of the information on the record carrier, e.g. form of tracks, actual track shape, e.g. wobbled, or cross-section, e.g. v-shaped; Sequential information structures, e.g. sectoring or header formats within a track
- G11B7/00736—Auxiliary data, e.g. lead-in, lead-out, Power Calibration Area [PCA], Burst Cutting Area [BCA], control information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004208686 | 2004-07-15 | ||
| JP2005067262A JP3907666B2 (ja) | 2004-07-15 | 2005-03-10 | レーザーマーキング用再生専用光情報記録媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200622011A TW200622011A (en) | 2006-07-01 |
| TWI327602B true TWI327602B (en) | 2010-07-21 |
Family
ID=35241160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094120841A TWI327602B (en) | 2004-07-15 | 2005-06-22 | Silver alloy reflective film, sputtering target therefor, and optical information recording medium using the same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7695790B2 (enExample) |
| EP (3) | EP2043097A1 (enExample) |
| JP (1) | JP3907666B2 (enExample) |
| KR (1) | KR100720203B1 (enExample) |
| AT (1) | ATE424025T1 (enExample) |
| DE (1) | DE602005012891D1 (enExample) |
| SG (1) | SG119296A1 (enExample) |
| TW (1) | TWI327602B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100568392B1 (ko) * | 2002-06-24 | 2006-04-05 | 가부시키가이샤 코베루코 카겐 | 은 합금 스퍼터링 타겟 및 그의 제조 방법 |
| US7514037B2 (en) * | 2002-08-08 | 2009-04-07 | Kobe Steel, Ltd. | AG base alloy thin film and sputtering target for forming AG base alloy thin film |
| JP3993530B2 (ja) * | 2003-05-16 | 2007-10-17 | 株式会社神戸製鋼所 | Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法 |
| JP2006294195A (ja) * | 2005-04-14 | 2006-10-26 | Kobe Steel Ltd | 光情報記録用Ａｇ合金反射膜、光情報記録媒体および光情報記録用Ａｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット |
| JP4377861B2 (ja) * | 2005-07-22 | 2009-12-02 | 株式会社神戸製鋼所 | 光情報記録媒体用Ａｇ合金反射膜、光情報記録媒体および光情報記録媒体用Ａｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット |
| JP4527624B2 (ja) * | 2005-07-22 | 2010-08-18 | 株式会社神戸製鋼所 | Ａｇ合金反射膜を有する光情報媒体 |
| JP2007035104A (ja) * | 2005-07-22 | 2007-02-08 | Kobe Steel Ltd | 光情報記録媒体用Ａｇ合金反射膜、光情報記録媒体および光情報記録媒体用Ａｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット |
| JP4377877B2 (ja) | 2005-12-21 | 2009-12-02 | ソニー株式会社 | 光情報記録媒体用Ａｇ合金反射膜、光情報記録媒体および光情報記録媒体用Ａｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット |
| JP2007335061A (ja) | 2006-05-16 | 2007-12-27 | Sony Corp | 光情報記録媒体とそのＢＣＡ（ＢｕｒｓｔＣｕｔｔｉｎｇＡｒｅａ）マーキング方法 |
| JP2008021393A (ja) * | 2006-07-14 | 2008-01-31 | Mitsubishi Kagaku Media Co Ltd | 光記録媒体およびディスク媒体認識信号の記録方法 |
| US8092889B2 (en) * | 2006-08-28 | 2012-01-10 | Kobe Steel, Ltd. | Silver alloy reflective film for optical information storage media, optical information storage medium, and sputtering target for the deposition of silver alloy reflective film for optical information storage media |
| JP2008117470A (ja) * | 2006-11-02 | 2008-05-22 | Sony Corp | 光情報記録媒体および光情報記録媒体の製造方法、ＢＣＡ（ＢｕｒｓｔＣｕｔｔｉｎｇＡｒｅａ）マーキング方法 |
| JP4540687B2 (ja) * | 2007-04-13 | 2010-09-08 | 株式会社ソニー・ディスクアンドデジタルソリューションズ | 読み出し専用の光情報記録媒体 |
| JP4694543B2 (ja) * | 2007-08-29 | 2011-06-08 | 株式会社コベルコ科研 | Ａｇ基合金スパッタリングターゲット、およびその製造方法 |
| JP4833942B2 (ja) * | 2007-08-29 | 2011-12-07 | 株式会社コベルコ科研 | Ａｇ基合金スパッタリングターゲット |
| JP2009076129A (ja) * | 2007-09-19 | 2009-04-09 | Kobe Steel Ltd | 読み出し専用の光情報記録媒体 |
| US8399100B2 (en) * | 2007-09-25 | 2013-03-19 | Kobe Steel, Ltd. | Reflection film, reflection film laminate, LED, organic EL display, and organic EL illuminating instrument |
| JP5046890B2 (ja) * | 2007-11-29 | 2012-10-10 | 株式会社コベルコ科研 | Ａｇ系スパッタリングターゲット |
| JP2010049736A (ja) * | 2008-08-21 | 2010-03-04 | Taiyo Yuden Co Ltd | 光情報記録媒体 |
| JP5331420B2 (ja) | 2008-09-11 | 2013-10-30 | 株式会社神戸製鋼所 | 読み出し専用の光情報記録媒体および該光情報記録媒体の半透過反射膜形成用スパッタリングターゲット |
| JP2010225572A (ja) * | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機ｅｌディスプレイ用の反射アノード電極および配線膜 |
| CN102308030B (zh) * | 2009-02-06 | 2015-01-07 | 出分由佳里 | 含银合金电镀浴以及使用该电镀浴的电解电镀方法 |
| WO2010119888A1 (ja) | 2009-04-14 | 2010-10-21 | 株式会社神戸製鋼所 | 光情報記録媒体、光情報記録媒体の反射膜形成用スパッタリングターゲット |
| CA2769569C (en) | 2009-07-31 | 2014-07-15 | M-Tech Japan Co., Ltd. | Tin-containing alloy plating bath, electroplating method using same, and substrate with the electroplating deposited thereon |
| JP5719179B2 (ja) * | 2010-01-25 | 2015-05-13 | 株式会社神戸製鋼所 | 反射膜積層体 |
| KR101432362B1 (ko) | 2011-06-29 | 2014-08-20 | 후지쯔 콤포넌트 가부시끼가이샤 | 프린터 장치 |
| JP2013077547A (ja) * | 2011-09-15 | 2013-04-25 | Mitsubishi Materials Corp | 導電性膜及びその製造方法並びに導電性膜形成用銀合金スパッタリングターゲット及びその製造方法 |
| JP5159962B1 (ja) * | 2012-01-10 | 2013-03-13 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| JP5159963B1 (ja) * | 2012-01-13 | 2013-03-13 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
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| KR100568392B1 (ko) * | 2002-06-24 | 2006-04-05 | 가부시키가이샤 코베루코 카겐 | 은 합금 스퍼터링 타겟 및 그의 제조 방법 |
| US20040005432A1 (en) | 2002-07-08 | 2004-01-08 | Ridout James W. | Reflective or semi-reflective metal alloy coatings |
| JP3655907B2 (ja) | 2002-08-20 | 2005-06-02 | 株式会社神戸製鋼所 | 光情報記録媒体用反射膜と半透過反射膜、および光情報記録媒体 |
| US7514037B2 (en) * | 2002-08-08 | 2009-04-07 | Kobe Steel, Ltd. | AG base alloy thin film and sputtering target for forming AG base alloy thin film |
| WO2004094135A1 (en) * | 2003-04-18 | 2004-11-04 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP3993530B2 (ja) | 2003-05-16 | 2007-10-17 | 株式会社神戸製鋼所 | Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法 |
| JP4009564B2 (ja) * | 2003-06-27 | 2007-11-14 | 株式会社神戸製鋼所 | リフレクター用Ａｇ合金反射膜、及び、このＡｇ合金反射膜を用いたリフレクター、並びに、このＡｇ合金反射膜のＡｇ合金薄膜の形成用のＡｇ合金スパッタリングターゲット |
| JP2005029849A (ja) * | 2003-07-07 | 2005-02-03 | Kobe Steel Ltd | リフレクター用Ａｇ合金反射膜、及び、このＡｇ合金反射膜を用いたリフレクター、並びに、このＡｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット |
| US20050112019A1 (en) * | 2003-10-30 | 2005-05-26 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording |
| TWI325134B (en) | 2004-04-21 | 2010-05-21 | Kobe Steel Ltd | Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target |
-
2005
- 2005-03-10 JP JP2005067262A patent/JP3907666B2/ja not_active Expired - Fee Related
- 2005-06-22 TW TW094120841A patent/TWI327602B/zh not_active IP Right Cessation
- 2005-06-22 US US11/158,079 patent/US7695790B2/en not_active Expired - Fee Related
- 2005-06-30 EP EP08020402A patent/EP2043097A1/en not_active Withdrawn
- 2005-06-30 DE DE602005012891T patent/DE602005012891D1/de not_active Expired - Lifetime
- 2005-06-30 EP EP08020403A patent/EP2077556A1/en not_active Withdrawn
- 2005-06-30 AT AT05014211T patent/ATE424025T1/de active
- 2005-06-30 EP EP05014211A patent/EP1617427B1/en not_active Expired - Lifetime
- 2005-07-06 SG SG200504273A patent/SG119296A1/en unknown
- 2005-07-14 KR KR1020050063819A patent/KR100720203B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100720203B1 (ko) | 2007-05-21 |
| EP1617427A3 (en) | 2006-03-15 |
| KR20060050179A (ko) | 2006-05-19 |
| EP1617427B1 (en) | 2009-02-25 |
| US20060013988A1 (en) | 2006-01-19 |
| DE602005012891D1 (de) | 2009-04-09 |
| EP2077556A1 (en) | 2009-07-08 |
| SG119296A1 (en) | 2006-02-28 |
| JP2006054032A (ja) | 2006-02-23 |
| ATE424025T1 (de) | 2009-03-15 |
| US7695790B2 (en) | 2010-04-13 |
| EP1617427A2 (en) | 2006-01-18 |
| EP2043097A1 (en) | 2009-04-01 |
| TW200622011A (en) | 2006-07-01 |
| JP3907666B2 (ja) | 2007-04-18 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |