TWI327175B - - Google Patents
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- Publication number
- TWI327175B TWI327175B TW095105911A TW95105911A TWI327175B TW I327175 B TWI327175 B TW I327175B TW 095105911 A TW095105911 A TW 095105911A TW 95105911 A TW95105911 A TW 95105911A TW I327175 B TWI327175 B TW I327175B
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- substrate
- magnet
- film
- magnetic force
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 155
- 238000000034 method Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims description 8
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 description 51
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 206010061218 Inflammation Diseases 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003195 fascia Anatomy 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005086687A JP4609759B2 (ja) | 2005-03-24 | 2005-03-24 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200637930A TW200637930A (en) | 2006-11-01 |
TWI327175B true TWI327175B (ja) | 2010-07-11 |
Family
ID=37023545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095105911A TW200637930A (en) | 2005-03-24 | 2006-02-22 | Film forming device, film forming method, and method of producing organic el element |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4609759B2 (ja) |
KR (1) | KR100925362B1 (ja) |
CN (2) | CN101090995A (ja) |
TW (1) | TW200637930A (ja) |
WO (1) | WO2006100867A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100273387A1 (en) * | 2007-12-27 | 2010-10-28 | Canon Anelva Corporation | Processing Apparatus and Method of Manufacturing Electron Emission Element and Organic EL Display |
KR101107181B1 (ko) * | 2010-01-04 | 2012-01-25 | 삼성모바일디스플레이주식회사 | 마스크 흡착용 자석 조립체 |
KR101084185B1 (ko) | 2010-01-12 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 패턴 형성 방법 및 유기 발광 소자의 제조방법 |
TWI475736B (zh) * | 2011-07-26 | 2015-03-01 | Innolux Corp | 電激發光顯示裝置的製作方法以及鍍膜機台 |
KR101203171B1 (ko) | 2012-05-22 | 2012-11-21 | 주식회사 아이.엠.텍 | 글래스 기판 합착을 위한 얼라인 장치 |
KR101951029B1 (ko) * | 2012-06-13 | 2019-04-26 | 삼성디스플레이 주식회사 | 증착용 마스크 및 이를 이용한 유기 발광 표시장치의 제조방법 |
KR102000718B1 (ko) * | 2012-11-15 | 2019-07-19 | 삼성디스플레이 주식회사 | 박막 증착용 마스크 조립체 및 이의 제조 방법 |
KR102081282B1 (ko) * | 2013-05-27 | 2020-02-26 | 삼성디스플레이 주식회사 | 증착용 기판이동부, 이를 포함하는 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치 |
KR102270080B1 (ko) * | 2013-10-30 | 2021-06-29 | 삼성디스플레이 주식회사 | 박막 증착 장치 |
KR102273050B1 (ko) | 2014-09-17 | 2021-07-06 | 삼성디스플레이 주식회사 | 증착용 마스크 어셈블를 포함하는 증착 장치 및 증착 방법 |
KR102250047B1 (ko) | 2014-10-31 | 2021-05-11 | 삼성디스플레이 주식회사 | 마스크 프레임 조립체, 그 제조 방법 및 유기 발광 표시 장치의 제조 방법 |
KR102280269B1 (ko) | 2014-11-05 | 2021-07-22 | 삼성디스플레이 주식회사 | 마스크 프레임 조립체 및 그 제조 방법 |
KR102025002B1 (ko) * | 2015-04-17 | 2019-09-24 | 다이니폰 인사츠 가부시키가이샤 | 증착 패턴의 형성 방법, 누름판 일체형의 압입 부재, 증착 장치 및 유기 반도체 소자의 제조 방법 |
KR102404576B1 (ko) | 2015-04-24 | 2022-06-03 | 삼성디스플레이 주식회사 | 마스크 프레임 조립체, 그 제조 방법 및 표시 장치의 제조 방법 |
JP6298138B2 (ja) * | 2015-11-25 | 2018-03-20 | キヤノントッキ株式会社 | 成膜システム、磁性体部及び膜の製造方法 |
CN105428552B (zh) * | 2015-12-31 | 2017-06-09 | 昆山国显光电有限公司 | Oled器件发光层形成方法 |
CN105568224B (zh) * | 2016-01-28 | 2018-09-21 | 京东方科技集团股份有限公司 | 蒸镀用遮挡装置以及蒸镀设备 |
KR102505877B1 (ko) | 2016-01-29 | 2023-03-06 | 삼성디스플레이 주식회사 | 마스크 프레임 조립체 및 이를 이용한 디스플레이 장치의 제조방법 |
JP6662102B2 (ja) * | 2016-02-29 | 2020-03-11 | 富士ゼロックス株式会社 | 光学装置の製造方法、基板装置、光学装置及び光学装置の製造装置 |
KR102017875B1 (ko) * | 2016-05-18 | 2019-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 소스의 운송을 위한 장치 및 방법 |
CN106048536A (zh) * | 2016-06-06 | 2016-10-26 | 京东方科技集团股份有限公司 | 一种蒸镀装置及待蒸镀基板加工方法 |
JP6309048B2 (ja) * | 2016-07-01 | 2018-04-11 | キヤノントッキ株式会社 | マスク吸着装置 |
KR102544244B1 (ko) | 2016-07-19 | 2023-06-19 | 삼성디스플레이 주식회사 | 마스크 프레임 조립체 |
CN106399936B (zh) * | 2016-12-09 | 2018-12-21 | 京东方科技集团股份有限公司 | 一种蒸镀设备及蒸镀方法 |
CN106978585A (zh) * | 2017-04-25 | 2017-07-25 | 昆山国显光电有限公司 | 固定装置以及蒸镀装置 |
CN107686960B (zh) * | 2017-07-25 | 2019-12-17 | 武汉华星光电半导体显示技术有限公司 | 一种成膜装置 |
KR101952521B1 (ko) * | 2017-10-31 | 2019-02-26 | 캐논 톡키 가부시키가이샤 | 성막장치, 성막방법, 및 전자 디바이스 제조방법 |
KR101993532B1 (ko) * | 2017-11-29 | 2019-06-26 | 캐논 톡키 가부시키가이샤 | 성막장치, 성막방법, 및 전자 디바이스 제조방법 |
KR101953038B1 (ko) * | 2017-12-13 | 2019-02-27 | 캐논 톡키 가부시키가이샤 | 정전척 장치, 마스크 부착장치, 성막장치, 성막방법, 및 전자 디바이스의 제조 방법 |
JP7188973B2 (ja) * | 2018-10-15 | 2022-12-13 | キヤノントッキ株式会社 | 成膜装置、製造システム、有機elパネルの製造システム、成膜方法、及び有機el素子の製造方法 |
JP7118864B2 (ja) * | 2018-11-07 | 2022-08-16 | キヤノントッキ株式会社 | 成膜装置、製造システム、有機elパネルの製造システム |
KR20200104969A (ko) * | 2019-02-27 | 2020-09-07 | 캐논 톡키 가부시키가이샤 | 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 성막 방법, 및 전자 디바이스 제조방법 |
CN109837509B (zh) * | 2019-04-04 | 2024-03-01 | 江苏集萃有机光电技术研究所有限公司 | 一种基片样品架、镀膜设备及控制方法 |
JP7420496B2 (ja) * | 2019-07-05 | 2024-01-23 | キヤノントッキ株式会社 | マスク保持機構、蒸着装置、および電子デバイスの製造装置 |
KR20210081700A (ko) * | 2019-12-24 | 2021-07-02 | 캐논 톡키 가부시키가이샤 | 성막장치 및 이를 사용하여 전자 디바이스를 제조하는 방법 |
KR20200005516A (ko) * | 2019-12-26 | 2020-01-15 | 엘지전자 주식회사 | 발광 소자를 이용한 디스플레이의 제조 장치 및 그 제조 방법 |
KR102464025B1 (ko) * | 2021-02-03 | 2022-11-07 | 파인원 주식회사 | 마그넷 플레이트 조립체 |
CN116083856A (zh) * | 2023-01-07 | 2023-05-09 | 唐山斯腾光电科技有限公司 | 一种红外窗片加工用蒸发镀膜装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3516346B2 (ja) * | 1992-09-08 | 2004-04-05 | 大日本印刷株式会社 | スパッタ用治具 |
JP3539125B2 (ja) | 1996-04-18 | 2004-07-07 | 東レ株式会社 | 有機電界発光素子の製造方法 |
JP2001049422A (ja) * | 1999-08-09 | 2001-02-20 | Hitachi Ltd | メタルマスクの基板への保持固定構造、保持固定治具、その補助具、及びトレイ |
JP3879093B2 (ja) * | 2000-07-13 | 2007-02-07 | 独立行政法人科学技術振興機構 | コンビナトリアルデバイス作製装置 |
JP2002075638A (ja) * | 2000-08-29 | 2002-03-15 | Nec Corp | マスク蒸着方法及び蒸着装置 |
KR100422487B1 (ko) * | 2001-12-10 | 2004-03-11 | 에이엔 에스 주식회사 | 전자석을 이용한 유기전계발광소자 제작용 증착장치 및그를 이용한 증착방법 |
JP2004183044A (ja) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器 |
JP2005187874A (ja) * | 2003-12-25 | 2005-07-14 | Seiko Epson Corp | 蒸着装置、蒸着方法、有機el装置、および電子機器 |
-
2005
- 2005-03-24 JP JP2005086687A patent/JP4609759B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-22 WO PCT/JP2006/303187 patent/WO2006100867A1/ja active Application Filing
- 2006-02-22 CN CNA2006800015797A patent/CN101090995A/zh active Pending
- 2006-02-22 CN CN201410065916.5A patent/CN103820755A/zh active Pending
- 2006-02-22 KR KR1020077016158A patent/KR100925362B1/ko not_active IP Right Cessation
- 2006-02-22 TW TW095105911A patent/TW200637930A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100925362B1 (ko) | 2009-11-09 |
TW200637930A (en) | 2006-11-01 |
JP4609759B2 (ja) | 2011-01-12 |
JP2006265650A (ja) | 2006-10-05 |
WO2006100867A1 (ja) | 2006-09-28 |
CN101090995A (zh) | 2007-12-19 |
KR20070090018A (ko) | 2007-09-04 |
CN103820755A (zh) | 2014-05-28 |
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