TWI327175B - - Google Patents
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- TWI327175B TWI327175B TW095105911A TW95105911A TWI327175B TW I327175 B TWI327175 B TW I327175B TW 095105911 A TW095105911 A TW 095105911A TW 95105911 A TW95105911 A TW 95105911A TW I327175 B TWI327175 B TW I327175B
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- Prior art keywords
- mask
- substrate
- magnet
- film
- magnetic force
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- 239000000758 substrate Substances 0.000 claims description 155
- 238000000034 method Methods 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims description 8
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 description 51
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 206010061218 Inflammation Diseases 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003195 fascia Anatomy 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
U27175 九、發明說明： .耆 【發明所屬之技術領域】 本發明係關於一種成膜裝置，成膜方法，以及有機EL • (電發光）元件之製造方法。 【先前技術】 在用以於基板上形成既定圖案之成膜裝置，具有包 括：呈平面狀地保持基板之夾頭、形成既定之開口圖案而 • 由磁性材料所構成之遮罩以及該遮罩固定於基板上之磁鐵 的構造。接著，在成膜時，基板係裝設及保持在夾頭之表 面，在該基板上，覆蓋遮罩。該遮罩係藉由設置在夾頭背 面之磁鐵之磁力而固定於基板上。 . 接者’在就薄膜形成裝置而揭示之專利文獻1，記載： 藉由在遮罩固定於基板上之時，使得永久磁鐵遠離於基 板，在遮罩覆蓋於基板之後，使得永久磁鐵接近於基板， 而防止遮罩之位置偏離，防止圖案不良之發生。 • 【專利文獻】日本特開2004- 79349號公報 【發明内容】 【發明所欲解決的課題】 遮罩係一般使用藉由遮罩幀框而固定遮罩薄膜周邊之 構造者。遮罩薄膜係由形成既定之開口圖案之磁性材料所 構成之薄金屬系之薄膜狀者。此外’遮罩幀框係保持遮罩 薄膜周圍之硬框架型構造。在成膜後而由基板來離開此種 2189-7757-PF 5 U2/175 .· 遮罩之狀態下，有藉由磁鐵之磁力而吸引遮罩薄膜至基板 •側來進行f曲之問題點發生。也就是說，相反於磁鐵：磁 •力而由基板勉強地離開遮罩，在進行數次之拆卸時，延伸 遮罩薄膜，開口圖案係也同樣地進行歪斜及變形。在開口 圖案進行變形時，有在基板上無法得到正確之成膜圓案之 問題點發生。 此外，假設在遮罩離開於基板時，即使是磁鐵遠離於 基板而減弱作用於遮罩之磁力之影響，也在無限制地移動 >磁鐵時，有所謂在該移動來花費相當時間之問題點發生。 特別疋在有機EL (Electroluminescence:電發光）元件 之製造，為了提高生產量而要求製造時間之縮短，因此， 在無限制地移動磁鐵時，有所謂就花費那麼多之製造時間 之問題點發生。 本發明之目的係提供一種達到製造時間之縮短之成膜 裝置，成膜方法，以及有機EL (電發光）元件之製造方法: 丨在第2,其目的提供一種能夠達到遮罩變形之防止之成膜 1裝置，成膜方法，以及有機EL(電發光）元件之製造方法: 【用以解決課題的手段】 為了達成前述之目的，因此，本發明之成膜裝置係能 夠在基板接合遮罩而形成配合於遮罩圖案之薄膜的成膜裝 置，其特徵在於：藉由磁性體而形成前述遮罩，具有對於 刖述基板來接合該遮罩之磁鐵，前述磁鐵係藉由放置在對U27175 IX. INSTRUCTION DESCRIPTION: 1. Field of the Invention The present invention relates to a film forming apparatus, a film forming method, and a method of manufacturing an organic EL (electroluminescence) element. [Prior Art] A film forming apparatus for forming a predetermined pattern on a substrate has a chuck including a substrate in a planar shape, a predetermined opening pattern, a mask made of a magnetic material, and the mask. The construction of a magnet fixed to a substrate. Next, at the time of film formation, the substrate is mounted and held on the surface of the chuck, and the mask is covered on the substrate. The mask is fixed to the substrate by the magnetic force of the magnet disposed on the back of the chuck. Patent Document 1 discloses a film forming device which discloses that a permanent magnet is moved away from the substrate when the mask is fixed on the substrate, and the permanent magnet is brought close to the substrate after the mask covers the substrate. The substrate prevents the position of the mask from deviating and prevents pattern defects from occurring. [Patent Document] JP-A-2004-79349 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] As a mask, a structure in which a periphery of a mask film is fixed by a mask frame is generally used. The mask film is a thin metal film formed of a magnetic material forming a predetermined opening pattern. In addition, the 'mask frame frame' maintains a hard frame structure around the mask film. After the film is formed and the substrate is separated from the 2189-7757-PF 5 U2/175 . . . mask, there is a problem that the mask film is attracted to the substrate side by the magnetic force of the magnet. occur. That is to say, contrary to the magnet: magnetic force, the substrate is barely separated from the mask, and when the detachment is performed several times, the mask film is stretched, and the opening pattern is also skewed and deformed in the same manner. When the opening pattern is deformed, there is a problem that a correct film forming method cannot be obtained on the substrate. Further, it is assumed that when the mask is separated from the substrate, even if the magnet is moved away from the substrate and the influence of the magnetic force acting on the mask is weakened, when the magnet is moved indefinitely, there is a problem that it takes a considerable amount of time for the movement. The point occurs. In particular, in the production of an organic EL (Electroluminescence) element, in order to increase the throughput, the manufacturing time is required to be shortened. Therefore, when the magnet is moved indefinitely, there is a problem that it takes so much manufacturing time. SUMMARY OF THE INVENTION An object of the present invention is to provide a film forming apparatus, a film forming method, and a method of manufacturing an organic EL (electroluminescence) element which are shortened in manufacturing time: 第 In the second object, the object of the invention is to provide a prevention of mask deformation. Film forming apparatus 1, film forming method, and manufacturing method of organic EL (electroluminescence) element: [Means for solving the problem] In order to achieve the above object, the film forming apparatus of the present invention is capable of bonding a substrate to a substrate A film forming apparatus for forming a film to be combined with a mask pattern is characterized in that the mask is formed of a magnetic body, and a magnet for bonding the mask to the surface of the substrate is provided, and the magnet is placed in a pair
於前述遮罩之吸附作用之所到達之限度位置以内之移動限 制裝置而進行行程限制。 2189-7757-PF 6 叫7175 此外八特徵在於1述之磁鐵係、設置在對應於前述 遮罩平面尺寸之面積範圍’使得作用於前述遮罩中央部之 磁力’比起作用^前述遮罩周邊部之磁力，還更加微弱。 此外’其特徵在;^ ·前述磁鐵係複數個設置在磁鐵配 置板在該狀,4下’可以使得複數個之磁鐵呈平面地配列 在平面上之格子點位置。 此外，前述移動限制裝置係設置在裝設基板之失頭， 能夠對於前述夾頭呈接離之磁鐵，來進行行程限制。在該 狀態下，前述夾頭及前述遮罩係能夠成為可旋轉於水平方 向之構造。前述移動限制裝置係如果藉由定位螺絲而構成 的話’則能夠成為更加簡單之構造。 此外，本發明之成膜方法係在夾入基板之位置來配置 遮罩和磁鐵而藉由前述磁鐵之磁力來固定覆蓋於前述基板 之前述遮罩而將配合於設置在前述遮罩之開口圖案之形狀 來形成在前述基板之表面的成膜方法，其特徵在於：能夠 在夹住之基板之背面側，接離及移動前述磁鐵，同時，前 述磁鐵係在使知成為藉由磁力所造成之吸附力到達至前述 基板表面側之遮罩之限度之位置來成為最大隔離位置之範 圍内，進行行程限制，重複地進行在該行程限制之範圍來 移動磁鐵並且在磁鐵之最大隔離位置時而由基板開始離開 遮罩來形成基板之交換，進行成膜◊在該狀態下，前述遮 罩係可以在基板之夾緊之前，預先地接合在基板面在以The stroke restriction is performed by the movement restricting means within the limit position reached by the adsorption of the mask. 2189-7757-PF 6 is called 7175. The eighth feature is characterized in that the magnet system described above is disposed in an area corresponding to the plane dimension of the mask so that the magnetic force acting on the central portion of the mask acts to the periphery of the mask. The magnetic force of the ministry is still weaker. Further, the feature is that the plurality of magnets are disposed in the shape of the magnet arrangement plate, and the lower ones are arranged such that a plurality of magnets are arranged in a plane on the plane of the lattice point. Further, the movement restricting device is provided on the mounting substrate, and the stroke can be restricted by the magnet that is attached to the chuck. In this state, the chuck and the mask can be configured to be rotatable in the horizontal direction. The above-described movement restricting device can be formed into a simpler structure if it is constituted by a positioning screw. Further, in the film forming method of the present invention, the mask and the magnet are disposed at positions sandwiching the substrate, and the mask covering the substrate is fixed by the magnetic force of the magnet to be fitted to the opening pattern provided in the mask. A method of forming a film on the surface of the substrate, wherein the magnet can be removed and moved on the back side of the substrate to be sandwiched, and the magnet is caused to be caused by a magnetic force. When the adsorption force reaches the position of the limit of the mask on the surface of the substrate to be the maximum isolation position, the stroke is restricted, and the movement of the magnet within the range of the stroke limitation is repeatedly performed and the maximum isolation position of the magnet is The substrate starts to leave the mask to form a substrate exchange, and a film formation is performed. In this state, the mask can be previously bonded to the substrate surface before the substrate is clamped.
該接合狀態來進行夾緊後，對於前述磁鐵來進行接近移動 而使得遮罩吸附於基板面。 2189-7757-PF 1327175 .. 卜’一種成膜方法係在夾入基板之位置來配置遮罩 .和磁鐵而將配合於設置在前述遮罩之開口圖案之形狀來形 • 成在則述基板之表面的成膜方法，其特徵在於包括：在對 位前述基板和前述遮罩後，將前述遮罩覆蓋在前述基板之 製程，使得配置在離開於前述基板之位置之前述磁鐵，接 近於則述基板，藉由前述磁鐵之磁力而固定前述遮罩之製 程，在刖述基板之表面，形成膜之製程；使得前述磁鐵移 動至遠離於前述基板之方向之製程；以及使得前述遮罩移 • 動至遠離於前述基板之方向之製程。. 此外本發明之有機EL (電發光）元件之製造方法係 在夾入基板之位置來配置遮罩和磁鐵而藉由前述磁鐵之磁 力來固疋覆蓋於則述基板之前述遮罩而將配合於設置在前 .述遮罩之開口圖案之有機EL元件之像素圖案來形成在前 述基板之表面的有機EL元件之製造方法，其特徵在於包 括：藉由定位螺絲而限制前述磁鐵之移動量，並且，使得 _ f述磁鐵移動至遠離於前述基板之方向之製程；以及使得 零前述遮罩移動至遠離於前述基板之方向之製程。 【發明效果】 如果藉此而在遮罩移動在離開於基板之方向之前，來 使得磁鐵移動在離開於基板之方向的話，則磁鐵之磁力並 無對於料來造成料，可以在移動遮罩時，防止由於磁 力而造成拉引。因此’能夠防止遮罩之變形，即使是進行 複數次，遮罩之拆卸，錢㈣置在料之心圖案並無 變形’能夠在基板’形成正確之成膜圖案。After the engagement is performed in the engaged state, the magnet is moved close to the substrate so that the mask is attracted to the substrate surface. 2189-7757-PF 1327175 . . . a film forming method in which a mask is placed at a position sandwiched between the substrates, and a magnet is fitted to the shape of the opening pattern provided in the mask to form a substrate. The film forming method of the surface includes: after aligning the substrate and the mask, covering the mask with the mask, so that the magnet disposed at a position away from the substrate is close to a substrate, a process of fixing the mask by a magnetic force of the magnet, a process of forming a film on a surface of the substrate; a process of moving the magnet to a direction away from the substrate; and moving the mask Move to a process away from the direction of the aforementioned substrate. Further, in the method of manufacturing an organic EL (electroluminescence) device of the present invention, a mask and a magnet are disposed at a position sandwiched between the substrates, and the magnetic shield of the magnet is used to fix the mask covering the substrate to be fitted. A method of manufacturing an organic EL element formed on a surface of the substrate by providing a pixel pattern of an organic EL element in an opening pattern of the mask, wherein the method further comprises: limiting a movement amount of the magnet by a positioning screw; And, a process of moving the magnet to a direction away from the substrate; and a process of moving the mask to a direction away from the substrate. [Effect of the Invention] If the magnet is moved in the direction away from the substrate before the movement of the mask moves away from the substrate, the magnetic force of the magnet does not cause material to be generated, and the mask can be moved. To prevent pulling due to magnetic force. Therefore, it is possible to prevent the deformation of the mask, and even if the mask is removed a plurality of times, the money (4) is not deformed in the center pattern of the material, and a correct film formation pattern can be formed on the substrate.
2189-7757-PF 1327175 此外，藉由移動限制裝置，而使得利用磁力所造成之 吸附力作用至接合在失緊之基板之遮罩之界限值，成為最 大行程位置，來限制磁鐵（磁鐵配置板）。可以藉此而在 最小行程範圍，移動磁鐵，同時，進行遮罩之卸除、基板 之父換，因此，能夠大幅度地縮短生產間隔時間。因此， 可以縮短製造之時間。 此外，磁鐵係設置在對應於遮罩平面尺寸之面積範 圍，因此，可以在遮罩之整個面，作用磁鐵之磁力。接著， 使得作用於遮罩中央部之磁鐵之磁力，比起作用於遮罩周 邊部之磁力，還更加微弱，因此，可以藉由在對準定位時 等而在基板和遮罩需要一定之間隙之狀態下，使得磁力均 等地作用於強薄膜鋼性之周邊部和弱薄膜鋼性之中央部， 而在基板和遮罩間，製作一定之間隙。此外，即使是在薄 膜之厚度、夹頭之厚度和基板之厚度呈+同之狀態下，也 可以藉由對於周邊部、中央部，來調整磁力，而進行對應。 此外’可以藉由將複數個之磁鐵，配置在磁鐵配置板，而 使得作用於遮罩中央部之磁鐵之磁力，比起作用於遮罩周 邊部之磁力’還更加微弱。 此外，在能夠旋轉夹頭時，裝設及保持於該夾頭之玻 璃基板係也旋轉於水平面内。接著’也一起旋轉這些和磁 鐵配置板或磁鐵、遮罩等。因此，可以藉由在成膜時，旋 轉夾頭等，而在基板面内，得到厚度均勻之膜。2189-7757-PF 1327175 In addition, by moving the restriction device, the adsorption force by the magnetic force acts on the limit value of the mask bonded to the substrate that is not tight, and becomes the maximum stroke position to restrict the magnet (the magnet arrangement plate) ). By this, the magnet can be moved in the minimum stroke range, and the mask can be removed and the father of the substrate can be replaced. Therefore, the production interval can be greatly shortened. Therefore, the manufacturing time can be shortened. Further, the magnet is disposed in an area corresponding to the size of the mask plane, and therefore, the magnetic force of the magnet can be applied to the entire surface of the mask. Then, the magnetic force of the magnet acting on the central portion of the mask is made weaker than the magnetic force acting on the peripheral portion of the mask. Therefore, a certain gap between the substrate and the mask can be required by alignment or the like. In this state, the magnetic force is uniformly applied to the central portion of the strong film steel and the central portion of the weak film steel, and a certain gap is formed between the substrate and the mask. Further, even in the state where the thickness of the film, the thickness of the chuck, and the thickness of the substrate are in the same state, the magnetic force can be adjusted by the peripheral portion and the central portion. Further, by arranging a plurality of magnets on the magnet arranging plate, the magnetic force acting on the magnet at the center of the mask is made weaker than the magnetic force acting on the peripheral portion of the mask. Further, when the chuck can be rotated, the glass substrate mounted and held by the chuck is also rotated in the horizontal plane. Then, these and magnet arrangement plates or magnets, masks, and the like are also rotated together. Therefore, it is possible to obtain a film having a uniform thickness in the surface of the substrate by rotating the chuck or the like at the time of film formation.
此外如果在遮罩覆蓋於基板時也使得磁鐵移動至遠 離於基板之方向的話，則磁鐵之磁力並無對於遮罩造成影 2189-7757-PF 1327175 響，遮罩和基板間之位置並無偏離。 此外，在有機EL (電發光）元件之製造方法，限制磁 鐵之移動量，因此，能夠縮短製造時間，並且，在遮罩移 動至遠離於基板之方向之前，使得磁鐵移動至遠離於基板 之方向，因此，能夠減弱作用於遮罩之磁鐵之磁力，可以 防止遮罩之變形。 【實施方式】 在以下，就本發明之減膜裝置.、成膜方法以及有機el (電發光）元件之製造方法之最佳實施形態而進行說明。 此外，在本實施形態，就使用真空蒸鍍裝置來作為成膜裝 置而藉由該真空蒸鍍裝置來製造有機EL元件之形態，進二 說明。 〜、 订 圖1係實施形態之真空蒸鍍裝置之上部機構之說明 圖。圖2係真空蒸鍍裝置之說明圖。真空蒸鍍裝置係在 /、底。卩包括有機材料12之蒸發源14 (供應源）同時在其 上部包括裝置上部機構16之概略構造。裝£上部機構U 係包括.失頭18、包括磁鐵22之磁鐵配置板2〇、移動限 制裝置24、基板夹具26和遮罩夹具28的構造。 有機材料12之蒸發源14係包括加入有機材料12之坩 堝l4a，在坩堝14a之外面，設置加熱•蒸發（昇華）有 機材料12之加熱器14b。此外，設置在真空蒸鍍裝置1〇 上部之夹頭18係面對著坩堝14a來進行配置而沿著水平方 向來進仃配置之平板。能夠藉此而使得夾頭18在和坩堝In addition, if the magnet is moved to a direction away from the substrate when the mask covers the substrate, the magnetic force of the magnet does not affect the mask 2189-7757-PF 1327175, and the position between the mask and the substrate does not deviate. . Further, in the method of manufacturing an organic EL (electroluminescence) element, the amount of movement of the magnet is restricted, so that the manufacturing time can be shortened, and the magnet is moved to a direction away from the substrate before the mask moves to a direction away from the substrate. Therefore, the magnetic force acting on the magnet of the mask can be weakened, and the deformation of the mask can be prevented. [Embodiment] Hereinafter, a preferred embodiment of a film-reducing device, a film-forming method, and a method for producing an organic EL (electroluminescence) device of the present invention will be described. Further, in the present embodiment, a mode in which an organic EL device is manufactured by the vacuum vapor deposition device using a vacuum vapor deposition device as a film deposition device will be described. ~, Fig. 1 is an explanatory view of the upper mechanism of the vacuum vapor deposition apparatus of the embodiment. Fig. 2 is an explanatory view of a vacuum evaporation apparatus. The vacuum evaporation apparatus is attached to the / bottom. The evaporation source 14 (supply source) including the organic material 12 includes the schematic configuration of the device upper mechanism 16 at the upper portion thereof. The upper mechanism U system includes a configuration in which the head 18, the magnet arrangement plate 2 including the magnet 22, the movement restricting device 24, the substrate holder 26, and the mask jig 28. The evaporation source 14 of the organic material 12 includes a crucible 14a to which the organic material 12 is added, and a heater 14b for heating/evaporating (sublimating) the organic material 12 is disposed outside the crucible 14a. Further, the chuck 18 provided on the upper portion of the vacuum vapor deposition apparatus 1 is placed facing the crucible 14a, and is placed in a horizontal direction. It is possible to make the collet 18 in harmony
2189-7757-PF 10 1327175 .14a間之對面部，保持玻螭基板32呈平面狀。夾頭18係 能夠藉由設置在裝置本體30外侧上部之旋轉機構（未圖 示）而進行水平旋轉。 . 磁鐵配置板2〇係平板，在夹頭18之上面、也就是破 璃基板32之背面，呈可移動地配置在接近及離開之方向。 磁鐵配置板20係藉由貫通裝置本體3〇之頂板部之支持軸 20a而進行下吊。在該支持軸2〇a之上端，連接水平支持 部20b。在水平支持部2〇b和裝置本體3〇之頂板部之間， 0設置伸縮裝置34，可以藉由伸縮動作而升降磁鐵配置板 20。此外，伸縮裝置34係可以是能夠上下地伸縮，例如可 以是汽缸等之致動器。 在該磁鐵配置板20之下面，圓盤型之磁鐵22排列及 配置於平面上。圖3係配置磁鐵之磁鐵配置板之概略仰視 圖。該磁鐵22係在磁鐵配置板2〇板面之格子點位置，進 =點狀配置’安裝在能夠吸附遮罩36平面整體之範圍。接 著，藉由考慮•設定磁鐵22之大小或磁鐵之大小 '磁鐵 22*之配置位置、玻璃基板32之厚度、夾頭18之厚度或材 質等，而使得作用於遮罩36中央部之磁力，比起作用於遮 •罩36周邊部之磁力，還更加微弱。作為具體之一例係在磁 鐵配置板20之下面，使得複數個之磁鐵22呈平面地配置 在格子點位置，在磁鐵配置板2〇之周邊部，配置強磁力之 磁鐵22 ’同時’在中央部，配置弱磁力之磁鐵22的構造。 此外，磁鐵22係可以藉由磁鐵配置板2〇之上下移動而接 觸於夾頭18之上面。2189-7757-PF 10 1327175 .14a between the faces, keeping the glass substrate 32 in a planar shape. The chuck 18 is horizontally rotatable by a rotating mechanism (not shown) provided at an upper portion of the outer side of the apparatus body 30. The magnet arranging plate 2 is a flat plate, and is disposed movably in the approaching and separating directions on the upper surface of the chuck 18, that is, the back surface of the glass substrate 32. The magnet arranging plate 20 is hoisted by the support shaft 20a of the top plate portion of the apparatus main body 3. At the upper end of the support shaft 2〇a, the horizontal support portion 20b is connected. Between the horizontal support portion 2'b and the top plate portion of the apparatus main body 3'', 0 is provided with a telescopic device 34, and the magnet arrangement plate 20 can be lifted and lowered by the expansion and contraction operation. Further, the expansion and contraction device 34 may be an actuator that can be expanded and contracted up and down, and may be, for example, a cylinder or the like. Below the magnet arranging plate 20, disc-shaped magnets 22 are arranged and arranged on a flat surface. Fig. 3 is a schematic bottom view of a magnet arranging plate for arranging magnets. The magnet 22 is placed at a lattice point of the fascia surface of the magnet arranging plate 2, and is placed in a dot-like arrangement to be attached to a range in which the entire plane of the mask 36 can be adsorbed. Next, by considering the size of the magnet 22, the size of the magnet, the arrangement position of the magnet 22*, the thickness of the glass substrate 32, the thickness or material of the chuck 18, etc., the magnetic force acting on the central portion of the mask 36 is made. It is weaker than the magnetic force acting on the peripheral portion of the cover 36. As a specific example, on the lower surface of the magnet arrangement plate 20, a plurality of magnets 22 are arranged in a plane at a lattice point position, and a magnet 22' at the periphery of the magnet arrangement plate 2 is placed at the center portion. The configuration of the weak magnetic magnet 22 is configured. Further, the magnet 22 can be contacted above the chuck 18 by the upper and lower movement of the magnet arranging plate 2 。.
2189-7757-PF 11 此外，在夹頭18之上面，設置使得磁鐵配置板2〇之 上方移動來限制在定範圍内之移動限制裝置24。該移動 限制！置24係、可以是例如^位螺絲。圓4係移動限制裝置 說月圖#動限制裝置24係由失頭18之上面開始朝向 至上方來進仃延伸之延設部24a以及設置在該延設部2切 之上端而在水平方向附加位差來形成磁鐵配置板20之抑 p力月b之限制部24b所構成。此外，在磁鐵配置板2〇，移 動限制裝置24之延設部24a成為可插通，同時，設置比起 限制部24b之平面尺寸還更加小之孔部2〇c。無法藉此而 使得磁鐵配置板2〇’利用比起孔部1還更加大之限制部 24b,來移動至比起該限制部2扑之更加上方。此外，限制 部24b之高度、也就是磁鐵配置板2〇之移動限制量係可以 考慮作用於遮罩36之磁鐵22之磁力或磁鐵配置板2〇之移 動時間等而適當地設定。例如可以在藉由限制部2处而停 止磁鐵配置板20之上升之位置，設定藉由磁鐵22所造成 之磁合作用並無到達至遮罩36之最小限度距離，可以在該 範圍内，成為吸附力變弱之範圍。 基板夹具26係由裝置本體30之上部開始朝向至下 方，來進行延伸，前端部26a係朝向至夹頭18側（裝置本 體30之中央側）而進行彎曲之鉤型，沿著夹頭18之側邊 而配置複數個。該基板夾具26係藉由其前端部26a (彎曲 部）而支持玻璃基板32之邊緣部，因此，設定各個前端部 26a，成為相同之高度（同一面内）。此外，基板夾具26 係可以藉由設置在裝置本體30外側上部之升降機構（未圖 2189-7757-PF 12 1327175 示）而維持各個前端部26a位處於同一面内之狀態，並且， 月匕夠進仃升降。接著’可以藉由上升基板夾$ Μ而使得玻 螭基板32之背面’接觸到夹頭18，呈平面狀地進行裝設 及保持。 遮罩炎具28係由裝置本體30之上部開始朝向至下 方，來進行延伸，前端部恤係朝向至夹頭⑴則（裝置本 體30之中央側）而進行彎曲之釣型，沿著夾頭18或基板 央具26之側邊而配置複數個。該遮罩夾具28係藉由其前 端部28a (弯曲部）而支持遮罩36之邊緣部，因此，設定 各個前端告"8a，成為相同之高度（同一面内）。此外， 遮罩央具28係可以藉由設置在裝置本體30外侧上部之升 降機構（未圖示）而維持各個前端部…位處於同一面内 之狀態，並且，能夠進行升降。可以藉此而使得遮罩Μ， 相對於玻璃基板32之表面’來移動在接近及離開之方向。 此外’遮罩36係包括：設置複數個之對應於有機乩元件 之各個像素之開口圖案之遮罩薄m 36a以及保持遮罩薄膜 36a周邊部之框架型之遮罩幀框36b。 、 接著，基板夾具26及遮罩夾具28係可以藉由設置在 真空蒸鍍裝置10外側上部之旋轉機構（未圖示）而一起 轉夾頭18和磁鐵配置板20等。 接著，就有機EL元件之製造方法（成膜方法）而進一 說明。首先，玻璃基板32係藉由基板搬送機構而放入至2 置本體30之内部，插入至夾頭18和遮罩36間。 者，ϊέ 璃基板32係隨著前述基板搬送機構之下降動作而移動至 2189-7757-PF 13 I327l75 下方’載置於基板夾具26上》然後，藉由上升遮罩夾具 28而移動遮罩36至上方，使得遮罩36和玻璃基板32成 為接合狀態。 接著，遮罩夾具28係持續地上升而一直到玻璃基板 32接觸到夾頭18之底面（夹頭面）為止。此外，玻璃基 板32係在载置於遮罩36上之時，沿著遮罩36而成為水 平’維持該水平狀態，並且，抵接於夹頭18。 然後，上升基板夾具26至接觸到玻璃基板32為止。 藉此而使得玻璃基板32，利用基板夾具26來維持水平狀 態，並且，裝設及保持於夾頭丨8〇接著，下降遮罩夾具 而移動遮罩36至下方。 然後，使用設置在玻璃基板32之對準定位標記和設置 在遮罩36之對準定位標記，而進行玻璃基板⑽和遮罩％ :之對位。圖5係玻璃基板和遮罩間之對位之說明圖。接 者，圖5 (A)係說明玻璃基板及遮罩之配置之圖。此外， =⑴係藉由相機所攝影之圖像而顯示發生位置偏離之 。此外’圖5 (c)係藉由相機所攝影之圖像而顯 不位置對位之狀態之圖。 具體地說’在玻璃基板32’至少在2個部位，設置對 例在:::玻璃基板32之對準^位標記4°係 如了〜置在玻璃基32所對角之角部，在玻璃 形成有機ELtl件之電極膜，同時， 之同樣材料而形成。接著’設置在玻璃基極 標記40之形狀係可以是例如圓或點、十字形等。準疋位2189-7757-PF 11 Further, on the upper side of the chuck 18, a movement restricting means 24 for moving the upper side of the magnet arrangement plate 2 to be restricted within a predetermined range is provided. The movement limit! The 24 series can be, for example, a screw. The circular 4 series movement restricting device said that the movement restricting device 24 is an extended portion 24a that extends from the upper surface of the head 18 toward the upper side and is provided at the upper end of the extended portion 2 and is attached in the horizontal direction. The position difference is formed by the restriction portion 24b of the magnet arrangement plate 20 which is the p-force b. Further, in the magnet arranging plate 2, the extending portion 24a of the movement restricting means 24 is detachable, and the hole portion 2'c which is smaller than the plane size of the regulating portion 24b is provided. Therefore, the magnet arrangement plate 2'' can be moved to be higher than the restriction portion 2 by the restriction portion 24b which is larger than the hole portion 1. Further, the height of the restriction portion 24b, that is, the movement limit amount of the magnet arrangement plate 2, can be appropriately set in consideration of the magnetic force acting on the magnet 22 of the mask 36, the movement time of the magnet arrangement plate 2, and the like. For example, the position at which the magnet arrangement plate 20 is raised by the restriction portion 2 can be stopped, and the magnetic cooperation by the magnet 22 can be set so as not to reach the minimum distance to the mask 36, and within this range, The range in which the adsorption force is weak. The substrate holder 26 is extended from the upper portion of the apparatus main body 30 toward the lower side, and the front end portion 26a is bent toward the chuck 18 side (the center side of the apparatus body 30), and is formed along the chuck 18 Multiples are configured on the side. Since the substrate holder 26 supports the edge portion of the glass substrate 32 by the tip end portion 26a (curved portion), the respective tip end portions 26a are set to have the same height (in the same plane). Further, the substrate holder 26 can maintain the state in which the respective front end portions 26a are in the same plane by the elevating mechanism (not shown in FIG. 2189-7757-PF 12 1327175) provided on the outer side of the outer side of the apparatus body 30, and In and out. Then, the back surface of the glass substrate 32 can be brought into contact with the chuck 18 by raising the substrate holder $, and can be mounted and held in a planar shape. The masking device 28 is extended from the upper portion of the device body 30 toward the lower side, and the front end portion is bent toward the chuck (1) (the center side of the apparatus body 30), and the fishing type is along the chuck. 18 or a plurality of sides of the substrate centering device 26 are disposed. The mask jig 28 supports the edge portion of the mask 36 by the front end portion 28a (curved portion). Therefore, each of the front ends is set to have the same height (in the same plane). Further, the mask center device 28 can maintain the state in which the respective front end portions are in the same plane by the elevating mechanism (not shown) provided on the outer side of the outer side of the apparatus main body 30, and can be lifted and lowered. Thereby, the mask Μ can be moved in the approaching and leaving direction with respect to the surface ' of the glass substrate 32. Further, the mask 36 includes a mask thin m 36a which is provided with a plurality of opening patterns corresponding to respective pixels of the organic germanium element, and a frame type mask frame 36b which holds the peripheral portion of the mask film 36a. Then, the substrate holder 26 and the mask jig 28 can be used to rotate the chuck 18, the magnet arrangement plate 20, and the like together with a rotating mechanism (not shown) provided on the outer side of the vacuum vapor deposition apparatus 10. Next, the method of producing an organic EL element (film formation method) will be further described. First, the glass substrate 32 is placed inside the second body 30 by the substrate transfer mechanism, and inserted between the chuck 18 and the mask 36. The glass substrate 32 is moved to 2189-7757-PF 13 I327l75 and placed under the substrate holder 26 as the substrate transfer mechanism is lowered. Then, the mask 36 is moved by raising the mask jig 28. Up to the top, the mask 36 and the glass substrate 32 are brought into an engaged state. Next, the mask jig 28 is continuously raised until the glass substrate 32 comes into contact with the bottom surface (the chuck surface) of the chuck 18. Further, when the glass substrate 32 is placed on the mask 36, it is horizontally maintained along the mask 36 to maintain the horizontal state, and is in contact with the chuck 18. Then, the substrate holder 26 is raised to contact the glass substrate 32. Thereby, the glass substrate 32 is maintained in a horizontal state by the substrate holder 26, and is attached and held to the chuck 丨8, and then the mask jig is lowered to move the mask 36 to the lower side. Then, the alignment of the glass substrate (10) and the mask % is performed using the alignment positioning marks provided on the glass substrate 32 and the alignment positioning marks provided on the mask 36. Fig. 5 is an explanatory view of the alignment between the glass substrate and the mask. Next, Fig. 5(A) is a view showing the arrangement of the glass substrate and the mask. In addition, =(1) shows the positional deviation caused by the image taken by the camera. Further, Fig. 5(c) is a diagram showing a state in which the position is aligned by the image photographed by the camera. Specifically, at least two locations of the glass substrate 32' are disposed in the following::: The alignment mark of the glass substrate 32 is 4°, and is placed at the corner of the diagonal of the glass substrate 32. The glass forms an electrode film of an organic ELtl member, and is formed of the same material. The shape of the glass base mark 40 may then be, for example, a circle or a dot, a cross, or the like. Quasi-position
2189-7757-PF 1327175 • · 此外’設置在遮罩3 6之對準定位標記4 2係可以設置 在對應於玻璃基板32所設置之對準定位標記4〇之位置， 其形狀係可以是點或圓、十字形等》此外，在玻璃基板32 之對準定位標記40成為圓之狀態下，可以使得遮罩36之 對準定位標記42成為點，在玻璃基板32之對準定位標記 40成為點之狀態下，可以使得遮罩36之對準定位標記42 成為圓。 此外，可以在真空蒸鍍裝置1〇,將攝影設置在玻璃基 • 板32之對準定位標記40和設置在遮罩36之對準定位標記 42之相機44予以設置（參考圖5 (a))。接著，如果確 認藉由相機44所攝影之圖像並且在對準定位標記4〇 ( 42 ) 之圓中而調整遮罩36之χ (縱）、γ (橫）、Θ (旋轉） 方向來放入對準定位標記42 ( 40 )之點的話，則結束玻璃 基板32和遮罩36之對位（參考圖5(β)、圖5(c))。 然後，移動遮罩36和磁鐵配置板2〇。圖6係在遮罩 36接合於玻璃基板32時之說明圖。在結束遮罩％和玻璃 讚基板32之對位時，移動遮罩夾具28至上方而一直到遮罩 36接觸到玻璃基板32為止。藉此而使得遮罩％覆蓋於玻 璃基板32。接著，藉由將伸縮裝置％予以收縮而使得磁 鐵配置板20移動至下方，使得磁鐵22接觸到夹頭18之上 面。藉此而使得磁鐵22之磁力，作用於遮罩36,固定及 保持遮罩3 6。 在經過此種遮罩36之裝設製程後，旋轉玻璃基板32 或遮罩36等’同時，藉由加熱器⑽而加熱•蒸發有機材2189-7757-PF 1327175 • In addition, the alignment mark 42 provided in the mask 36 can be disposed at a position corresponding to the alignment mark 4 设置 set by the glass substrate 32, and the shape can be a point. Or a circle, a cross, or the like. Further, in a state in which the alignment mark 40 of the glass substrate 32 is rounded, the alignment mark 42 of the mask 36 can be made a point, and the alignment mark 40 on the glass substrate 32 becomes In the state of the dot, the alignment mark 42 of the mask 36 can be made a circle. Further, in the vacuum evaporation apparatus 1a, the photographing is set on the alignment mark 40 of the glass substrate 32 and the camera 44 disposed on the alignment mark 42 of the mask 36 (refer to Fig. 5 (a) ). Next, if the image photographed by the camera 44 is confirmed and the 36 (vertical), γ (horizontal), Θ (rotation) directions of the mask 36 are adjusted in the circle of the alignment mark 4 〇 ( 42 ), When the point of alignment of the positioning mark 42 (40) is entered, the alignment of the glass substrate 32 and the mask 36 is completed (refer to Fig. 5 (β), Fig. 5 (c)). Then, the mask 36 and the magnet arrangement plate 2 are moved. Fig. 6 is an explanatory view when the mask 36 is bonded to the glass substrate 32. When the mask % and the glass substrate 32 are aligned, the mask jig 28 is moved up until the mask 36 contacts the glass substrate 32. Thereby, the mask % is covered on the glass substrate 32. Next, the magnet arrangement plate 20 is moved to the lower side by contracting the telescopic device % so that the magnet 22 comes into contact with the upper surface of the collet 18. Thereby, the magnetic force of the magnet 22 acts on the mask 36 to fix and hold the mask 36. After passing through the mounting process of the mask 36, the glass substrate 32 or the mask 36 or the like is rotated while heating and evaporating the organic material by the heater (10).
2189-7757-PF 15 1327175 料12,在玻璃基板32 ±，形成既定之圖案。藉此而製造 有機EL元件。 接著，就蒸鐘結束後之製程而進行說明。在結束蒸鑛 時，相同於圖6所示之形態，遮罩36係透過玻璃基板^ 而接觸到夾頭18之下面’ _配置板2Q (磁鐵22)係接 觸到夾頭18之上面。接著，在遮罩36之拆卸製程，首先， 使得磁鐵配置板20移動至上方。然後，下降遮罩夾具28， 移動遮罩36至下方。接著’下降基板夾&⑺，移動玻璃 基板32至下方。然後，將前述之基板搬送機構，放入至裝 置本體30之内部，回收玻璃基板32。 在此種真空蒸鍍裝置10及有機乩元件之製造方法（成 膜方法），能夠藉由在裝置本體30之外側上部，設置伸縮 裝置34，而使得磁鐵配置板20 (磁鐵22)相對於夾頭18 之上面，來移動於接近及離開之方向，因此，可以在蒸鍍 時’下降磁鐵22,藉由磁力而固定及保持遮罩36,在蒸鍍 以外時，上升磁鐵22,使得磁力之影響，並無賦予至遮罩 36。也就是說，可以在遮罩薄膜36a不施加負荷，來裝卸 遮罩36’即使是進行複數次之裝卸，也並無延伸遮罩薄膜 36a。因此’遮罩36之開口圖案係並無變形，因此，可以 在玻璃基板32上，形成正確之有機EL元件之圖案。 此外’在夾頭18之上面，設置磁鐵配置板20之移動 限制裝置24，因此，能夠限制磁鐵配置板20之移動量至 既定範圍。也就是說，移動量之下限係磁鐵22和夾頭18 接觸之位置，移動量之上限係磁鐵22之磁力對於遮罩36 2189-7757-PF 16 1327175 並無造成影響之位置。因此，可以將磁鐵配置板2〇之移動 里，抑制至最小限度，因此，能夠縮短製造時間，可以提 问有機EL 7〇件之生產量。 此外，可以任意地設定移動限制裝置24之限制部24b 之冋度，因此，能夠調整磁鐵配置板20之移動量，可以自 由地調整作用於遮罩36之磁力。 此外，玻璃基板32係在設置於夾頭面之前，—度載置 於位處在玻璃基板32下方之遮罩36,仍然夾緊在每個遮 罩36之夾頭面，因此，能夠消除在基板夹具26時之彎曲。 也就是說，即使是使用厚度變薄之玻璃基板32,玻璃基板 32係也維持水平狀態而裝設及保持在夾頭18，因此，能夠 防止玻璃基板32之中央部由於自重或重力而彎曲至下方。 此外，在則述之實施形態，磁鐵22係正如圖3所示， 構成改變磁鐵配置板2〇之中央部之磁鐵22之大小和配置 圖案以及周邊部之磁鐵22之大小和配置圖案，使得作用於 遮罩36中央部之磁力，比起周邊部，還更加微弱，但是， 並非限定於該形態。也就是說，也可以藉由例如磁鐵22之 大小全部相同，改變磁鐵22之配置圖案，而使得作用於遮 罩36中央部之磁力，比起周邊部，還更加微弱。此外，也 可以藉由磁鐵22之配置圓案呈相同，改變磁鐵22之大小， 而使得作用於遮罩36中央部之磁力，比起周邊部，還更加 微弱》 此外’在前述之實施形態，使兩在遮罩36和玻璃基板 32間之對位之對準定位標記40、42係正如圈5所示，成2189-7757-PF 15 1327175 Material 12, on the glass substrate 32 ±, formed a predetermined pattern. Thereby, an organic EL element is manufactured. Next, the process after the end of the steaming will be described. At the end of the steaming, in the same manner as shown in Fig. 6, the mask 36 is passed through the glass substrate to contact the lower surface of the chuck 18. The arranging plate 2Q (the magnet 22) is in contact with the upper surface of the chuck 18. Next, in the detaching process of the mask 36, first, the magnet arranging plate 20 is moved to the upper side. Then, the mask jig 28 is lowered, and the mask 36 is moved to the lower side. Then, the substrate holder & (7) is lowered to move the glass substrate 32 to the lower side. Then, the substrate transfer mechanism described above is placed inside the device body 30, and the glass substrate 32 is collected. In the vacuum vapor deposition device 10 and the method for producing an organic tantalum element (film formation method), the expansion device 34 can be provided on the outer portion of the outer portion of the device body 30, so that the magnet arrangement plate 20 (the magnet 22) is opposed to the clamp. The upper surface of the head 18 is moved in the direction of approaching and leaving. Therefore, the magnet 22 can be lowered and fixed by the magnetic force during vapor deposition, and the magnet 22 can be raised and raised by the magnetic force. The effect is not given to the mask 36. In other words, the mask 36' can be attached or detached without applying a load to the mask film 36a. Even if it is loaded and unloaded a plurality of times, the mask film 36a is not extended. Therefore, the opening pattern of the mask 36 is not deformed, so that a pattern of the correct organic EL element can be formed on the glass substrate 32. Further, the movement restricting means 24 of the magnet arranging plate 20 is provided on the upper surface of the chuck 18, so that the amount of movement of the magnet arranging plate 20 can be restricted to a predetermined range. That is, the lower limit of the amount of movement is the position at which the magnet 22 and the chuck 18 are in contact, and the upper limit of the amount of movement is the position at which the magnetic force of the magnet 22 does not affect the mask 36 2189-7757-PF 16 1327175. Therefore, the movement of the magnet arrangement plate 2 can be minimized, so that the manufacturing time can be shortened, and the production amount of the organic EL 7 element can be requested. Further, since the degree of the restriction portion 24b of the movement restricting device 24 can be arbitrarily set, the amount of movement of the magnet arrangement plate 20 can be adjusted, and the magnetic force acting on the mask 36 can be freely adjusted. In addition, the glass substrate 32 is placed on the face of the chuck, and the mask 36 placed under the glass substrate 32 is still clamped on the chuck surface of each of the masks 36, thereby eliminating The substrate holder 26 is bent at the time. In other words, even if the glass substrate 32 having a reduced thickness is used, the glass substrate 32 is horizontally mounted and held by the chuck 18, so that the central portion of the glass substrate 32 can be prevented from being bent due to its own weight or gravity. Below. Further, in the embodiment described above, the magnet 22 is formed as shown in Fig. 3, and the size and arrangement pattern of the magnet 22 in the central portion of the magnet arrangement plate 2〇 and the size and arrangement pattern of the magnets 22 in the peripheral portion are configured to function. The magnetic force at the central portion of the mask 36 is weaker than the peripheral portion, but is not limited to this configuration. In other words, the arrangement pattern of the magnets 22 can be changed by, for example, the same size of the magnets 22, so that the magnetic force acting on the central portion of the mask 36 is weaker than that of the peripheral portion. Further, the arrangement of the magnets 22 may be the same, and the size of the magnet 22 may be changed so that the magnetic force acting on the central portion of the mask 36 is weaker than that of the peripheral portion. Further, in the foregoing embodiment, Aligning the two alignment marks 40, 42 between the mask 36 and the glass substrate 32 is as shown in circle 5.
2189-7757-PF 17 1327175 為點或圓而進行說明，但是，並非限定於該形態。也就是 «兑對準疋位彳示§己40、42係可以成為圓或十字形之構造。 此外，在前述之實施形態，使用在遮罩36和玻璃基板 32間之對位之相機44係正如圖5所示，成為使用2個之 形態，但是，並非限定於該形態。也就是說，相機^係可 以設置3個以上。在該狀態下，對準^位標記4D、42係可 以。又置在玻璃基板32或遮罩36之角部。 此外，在前述之實施形態，將使用真空蒸鍍裝置1Q來 :為成膜裝置之形態，予以說明’但是，並非限定於該形 恶，也可以是濺鍍裝置或氣相成長裝置等之其他之成膜裝 置。此外，基板係並非限定在玻璃基板32，也可以是由玻 璃以外之材料所構成之基板。 【產業上之可利用性】 可以利用-在對於有機EL基板等之圖案形成技術。 【圖式簡單說明】 圖1係裝置上部機構之說明圖。 圖2係真空蒸鍍裝置之說明圖。 圖3係配置磁鐵之磁鐵配置板之概略仰視圖。 圖4係移動限制裝置之說明圖。 圖5(A)〜（C)係玻璃基板和遮罩間之對位之說明圖。 圖6係在遮罩覆蓋於玻璃基板時之說明圖。 【主要元件符號說明】2189-7757-PF 17 1327175 is described as a point or a circle, but is not limited to this form. That is to say, the "aligned position" indicates that the 40, 42 series can be a circular or cross-shaped structure. Further, in the above-described embodiment, the camera 44 that is positioned between the mask 36 and the glass substrate 32 is used as shown in Fig. 5, but two forms are used. However, the present invention is not limited to this embodiment. In other words, the camera can be set to more than three. In this state, the alignment marks 4D, 42 can be used. It is also placed at the corner of the glass substrate 32 or the mask 36. Further, in the above-described embodiment, the vacuum vapor deposition apparatus 1Q is used as the film formation apparatus. However, the shape is not limited to the shape, and the sputtering apparatus or the vapor phase growth apparatus may be used. Film forming device. Further, the substrate is not limited to the glass substrate 32, and may be a substrate made of a material other than glass. [Industrial Applicability] A pattern forming technique for an organic EL substrate or the like can be utilized. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view of an upper mechanism of the apparatus. Fig. 2 is an explanatory view of a vacuum evaporation apparatus. Fig. 3 is a schematic bottom view of a magnet arranging plate for arranging magnets. Fig. 4 is an explanatory view of a movement restricting device. 5(A) to (C) are explanatory views of the alignment between the glass substrate and the mask. Fig. 6 is an explanatory view when the mask is covered on the glass substrate. [Main component symbol description]
2189-7757-PF 18 13271752189-7757-PF 18 1327175
1 0〜 真空蒸鍍裝置； 12〜 有機材料； 14〜 蒸發源； 14a' 〜坩堝； 14b' ^加熱器； 1 6〜 裝置上部機構； 18〜 夾頭； 20〜 磁鐵配置板； 20a' 〜支持轴； 20b' -水平支持部； 20c〜孔部； 22〜 磁鐵； 24〜 移動限制裝置； 24a- •-延設部； 24b， 〜限制部； 26〜 基板炎具； 26a， 〜前端部； 28〜 遮罩夹具； 28a- -前端部； 30〜 裝置本體； 32〜 玻璃基板； 34〜 伸縮裝置； 36〜 遮罩； 3 6a， ^遮罩薄膜；1 0~ vacuum evaporation device; 12~ organic material; 14~ evaporation source; 14a'~坩埚; 14b'^heater; 1 6~ device upper mechanism; 18~ chuck; 20~ magnet configuration plate; 20a'~ Support shaft; 20b' - horizontal support; 20c ~ hole; 22 ~ magnet; 24~ movement limiting device; 24a- • - extension; 24b, ~ restriction; 26~ substrate inflammation; 26a, ~ front end 28~ mask clamp; 28a--front end; 30~ device body; 32~ glass substrate; 34~ telescopic device; 36~ mask; 3 6a, ^ mask film;
2189-7757-PF 19 13271752189-7757-PF 19 1327175
36b〜遮罩幀框； 40〜對準定位標記； 42〜對準定位標記； 4 4〜相機。 2189-7757-PF 2036b ~ mask frame frame; 40 ~ alignment positioning mark; 42 ~ alignment positioning mark; 4 4 ~ camera. 2189-7757-PF 20
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| JP2005086687A JP4609759B2 (en) | 2005-03-24 | 2005-03-24 | Deposition equipment |
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| TW200637930A TW200637930A (en) | 2006-11-01 |
| TWI327175B true TWI327175B (en) | 2010-07-11 |
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| TW095105911A TW200637930A (en) | 2005-03-24 | 2006-02-22 | Film forming device, film forming method, and method of producing organic el element |
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| JP (1) | JP4609759B2 (en) |
| KR (1) | KR100925362B1 (en) |
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Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100024945A (en) * | 2007-12-27 | 2010-03-08 | 캐논 아네르바 가부시키가이샤 | Processing apparatus, electron emitting element and method for manufacturing organic el display |
| KR101107181B1 (en) * | 2010-01-04 | 2012-01-25 | 삼성모바일디스플레이주식회사 | Magnetic assembly for contacting a mask |
| KR101084185B1 (en) | 2010-01-12 | 2011-11-17 | 삼성모바일디스플레이주식회사 | Method for forming pattern and manufacturing method for organic light emitting device |
| TWI475736B (en) * | 2011-07-26 | 2015-03-01 | Innolux Corp | Manufacturing method of electroluminescent display apparatus and plating machine |
| KR101203171B1 (en) | 2012-05-22 | 2012-11-21 | 주식회사 아이.엠.텍 | Align the device for glass substrate bonding |
| KR101951029B1 (en) * | 2012-06-13 | 2019-04-26 | 삼성디스플레이 주식회사 | Mask for deposition and method for manufacturing organic light emitting diode display using the same |
| KR102000718B1 (en) * | 2012-11-15 | 2019-07-19 | 삼성디스플레이 주식회사 | Mask assembly for thin film vapor deposition and manufacturing method thereof |
| KR102081282B1 (en) * | 2013-05-27 | 2020-02-26 | 삼성디스플레이 주식회사 | Substrate transfer unit for deposition, deposition apparatus comprising the same, method for manufacturing organic light emitting display apparatus using the same, organic light emitting display apparatus manufacture by the method |
| KR102270080B1 (en) * | 2013-10-30 | 2021-06-29 | 삼성디스플레이 주식회사 | Thin film depositing apparatus |
| KR102273050B1 (en) | 2014-09-17 | 2021-07-06 | 삼성디스플레이 주식회사 | Apparatus for deposition comprising a mask assembly for deposition and depositing method using a mask assembly for deposition |
| KR102250047B1 (en) | 2014-10-31 | 2021-05-11 | 삼성디스플레이 주식회사 | Mask frame assembly, manufacturing method of the same and manufacturing method of organic light emitting display device there used |
| KR102280269B1 (en) | 2014-11-05 | 2021-07-22 | 삼성디스플레이 주식회사 | Mask frame assembly for deposition, manufacturing method of the same |
| KR102025002B1 (en) | 2015-04-17 | 2019-09-24 | 다이니폰 인사츠 가부시키가이샤 | Method of forming deposition pattern, press-fitted member of pressure plate integrated type, deposition apparatus and method of manufacturing organic semiconductor element |
| KR102404576B1 (en) | 2015-04-24 | 2022-06-03 | 삼성디스플레이 주식회사 | Mask frame assembly for thin layer deposition, manufacturing method of the same and manufacturing method of display device there used |
| JP6298138B2 (en) * | 2015-11-25 | 2018-03-20 | キヤノントッキ株式会社 | Film forming system, magnetic body part, and film manufacturing method |
| CN105428552B (en) * | 2015-12-31 | 2017-06-09 | 昆山国显光电有限公司 | OLED luminescent layer forming method |
| CN105568224B (en) * | 2016-01-28 | 2018-09-21 | 京东方科技集团股份有限公司 | Vapor deposition radical occlusion device and evaporated device |
| KR102505877B1 (en) | 2016-01-29 | 2023-03-06 | 삼성디스플레이 주식회사 | Mask frame assembly and method for manufacturing display apparatus using the same |
| JP6662102B2 (en) * | 2016-02-29 | 2020-03-11 | 富士ゼロックス株式会社 | Optical device manufacturing method, substrate device, optical device, and optical device manufacturing device |
| US20190292653A1 (en) * | 2016-05-18 | 2019-09-26 | Stefan Bangert | Apparatus and method for transportation of a deposition source |
| CN106048536A (en) * | 2016-06-06 | 2016-10-26 | 京东方科技集团股份有限公司 | Evaporation device and machining method for to-be-evaporated base plate |
| JP6309048B2 (en) * | 2016-07-01 | 2018-04-11 | キヤノントッキ株式会社 | Mask suction device |
| KR102544244B1 (en) | 2016-07-19 | 2023-06-19 | 삼성디스플레이 주식회사 | Mask frame assembly |
| CN106399936B (en) * | 2016-12-09 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of evaporated device and evaporation coating method |
| CN106978585A (en) * | 2017-04-25 | 2017-07-25 | 昆山国显光电有限公司 | Fixing device and evaporation coating device |
| CN107686960B (en) * | 2017-07-25 | 2019-12-17 | 武汉华星光电半导体显示技术有限公司 | Film forming device |
| KR101952521B1 (en) * | 2017-10-31 | 2019-02-26 | 캐논 톡키 가부시키가이샤 | Film forming apparatus, film forming method and manufacturing method of electronic device |
| KR101993532B1 (en) * | 2017-11-29 | 2019-06-26 | 캐논 톡키 가부시키가이샤 | Film formation apparatus, film formation method and manufacturing method of electronic device |
| KR101953038B1 (en) * | 2017-12-13 | 2019-02-27 | 캐논 톡키 가부시키가이샤 | Electrostatic chuck device, mask attaching device, film-forming apparatus, film-forming method, and method for manufacturing electronic device |
| JP7188973B2 (en) * | 2018-10-15 | 2022-12-13 | キヤノントッキ株式会社 | Film forming apparatus, manufacturing system, organic EL panel manufacturing system, film forming method, and organic EL element manufacturing method |
| JP7118864B2 (en) * | 2018-11-07 | 2022-08-16 | キヤノントッキ株式会社 | Film deposition equipment, manufacturing system, organic EL panel manufacturing system |
| KR20200104969A (en) * | 2019-02-27 | 2020-09-07 | 캐논 톡키 가부시키가이샤 | Alignment apparatus, film forming apparatus, alignment method, film forming method and manufacturing method of electronic device |
| CN109837509B (en) * | 2019-04-04 | 2024-03-01 | 江苏集萃有机光电技术研究所有限公司 | Substrate sample holder, coating equipment and control method |
| JP7420496B2 (en) * | 2019-07-05 | 2024-01-23 | キヤノントッキ株式会社 | Mask holding mechanisms, vapor deposition equipment, and electronic device manufacturing equipment |
| KR20210081700A (en) * | 2019-12-24 | 2021-07-02 | 캐논 톡키 가부시키가이샤 | Film forming apparatus and electronic device manufacturing method using the same |
| KR102464025B1 (en) * | 2021-02-03 | 2022-11-07 | 파인원 주식회사 | Magnet plate assembly |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3516346B2 (en) * | 1992-09-08 | 2004-04-05 | 大日本印刷株式会社 | Jig for sputtering |
| JP3539125B2 (en) | 1996-04-18 | 2004-07-07 | 東レ株式会社 | Manufacturing method of organic electroluminescent device |
| JP2001049422A (en) * | 1999-08-09 | 2001-02-20 | Hitachi Ltd | Structure and jig for holding metal mask to substrate, its auxiliary piece and tray |
| JP3879093B2 (en) * | 2000-07-13 | 2007-02-07 | 独立行政法人科学技術振興機構 | Combinatorial device manufacturing equipment |
| JP2002075638A (en) * | 2000-08-29 | 2002-03-15 | Nec Corp | Vapor deposition method of mask and vapor deposition device |
| KR100422487B1 (en) * | 2001-12-10 | 2004-03-11 | 에이엔 에스 주식회사 | Evaporation Apparatus for Manufacturing Organic Electro-Luminescent Display Device using Electromagnet and Evaporation Method using the same |
| JP2004183044A (en) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | Mask vapor deposition method and apparatus, mask and mask manufacturing method, display panel manufacturing apparatus, display panel and electronic equipment |
| JP2005187874A (en) * | 2003-12-25 | 2005-07-14 | Seiko Epson Corp | Vapor deposition apparatus, vapor deposition method, organic electroluminescence device and electronic equipment |
-
2005
- 2005-03-24 JP JP2005086687A patent/JP4609759B2/en not_active Expired - Fee Related
-
2006
- 2006-02-22 CN CN201410065916.5A patent/CN103820755A/en active Pending
- 2006-02-22 CN CNA2006800015797A patent/CN101090995A/en active Pending
- 2006-02-22 TW TW095105911A patent/TW200637930A/en not_active IP Right Cessation
- 2006-02-22 KR KR1020077016158A patent/KR100925362B1/en not_active IP Right Cessation
- 2006-02-22 WO PCT/JP2006/303187 patent/WO2006100867A1/en active Application Filing
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|---|---|
| KR100925362B1 (en) | 2009-11-09 |
| WO2006100867A1 (en) | 2006-09-28 |
| TW200637930A (en) | 2006-11-01 |
| JP4609759B2 (en) | 2011-01-12 |
| CN103820755A (en) | 2014-05-28 |
| KR20070090018A (en) | 2007-09-04 |
| CN101090995A (en) | 2007-12-19 |
| JP2006265650A (en) | 2006-10-05 |
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