TWI316968B - - Google Patents

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TWI316968B
TWI316968B TW095105918A TW95105918A TWI316968B TW I316968 B TWI316968 B TW I316968B TW 095105918 A TW095105918 A TW 095105918A TW 95105918 A TW95105918 A TW 95105918A TW I316968 B TWI316968 B TW I316968B
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TW
Taiwan
Prior art keywords
substrate
mask
chuck
glass substrate
film forming
Prior art date
Application number
TW095105918A
Other languages
Chinese (zh)
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TW200632117A (en
Inventor
Tatsuya Kataoka
Kenji Nagao
Kenichi Saito
Original Assignee
Mitsui Shipbuilding Eng
Choshu Industry Company Ltd
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Application filed by Mitsui Shipbuilding Eng, Choshu Industry Company Ltd filed Critical Mitsui Shipbuilding Eng
Publication of TW200632117A publication Critical patent/TW200632117A/en
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Publication of TWI316968B publication Critical patent/TWI316968B/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Description

'1316968 m 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種成膜裝置中之基板安裝方法以及成 ' 膜方法。 【先前技術】 在製造有機EL ( Electroluminescence :電發光)元 件之真空蒸鍍裝置(成膜裝置),設置在底部放入有機材 φ 料之坩堝,在坩堝之外面,設置加熱•蒸發(昇華)有機 材料之加熱器。此外,在真空蒸鍍裝置,設置:面對著掛 、 螞而進行配置之夾頭以及接觸到玻璃基板之邊緣部而將玻 璃基板安裝及保持在夾頭底面之基板夾具。夾頭係用以維 持玻璃基板在平面之平板’在基板夾具,設置升降機構。 此外’在真空蒸鍍裝置,將用以形成有機EL元件之圖案在 玻璃基板之遮罩,設置在夾頭和坩堝之間。 圖6係在真空蒸鐘裝置來安裝玻璃基板時之說明圖。 Φ 首先’藉由基板搬送機構而將玻璃基板2插入至失頭1和 遮罩3間’載置於基板夾具4上(S1)。基板夹具4係在 載置玻璃基板2時,進行上升,使得玻璃基板2揍觸到夾 頭1之底面(S2)。藉此而使得玻璃基板2 ’利用夾頭^ 和基板夾具4來進行安裝保持。然後,上升遮罩3而覆蓋 於玻璃基板2(S3)。'1316968 m IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a substrate mounting method and a film forming method in a film forming apparatus. [Prior Art] A vacuum vapor deposition apparatus (film formation apparatus) for manufacturing an organic EL (electroluminescence) element is provided with a material φ material placed at the bottom, and heating/evaporation (sublimation) is provided outside the crucible. A heater for organic materials. Further, in the vacuum vapor deposition apparatus, a chuck which is disposed facing the hanging and the grass and a substrate holder which is in contact with the edge portion of the glass substrate to mount and hold the glass substrate on the bottom surface of the chuck is provided. The chuck is used to maintain the flat plate of the glass substrate in the substrate holder, and the lifting mechanism is provided. Further, in the vacuum evaporation apparatus, a mask for forming a pattern of an organic EL element on a glass substrate is provided between the chuck and the crucible. Fig. 6 is an explanatory view showing a state in which a glass substrate is mounted in a vacuum steaming device. Φ First, the glass substrate 2 is inserted between the head 1 and the mask 3 by the substrate transfer mechanism, and placed on the substrate holder 4 (S1). When the substrate holder 4 is placed on the glass substrate 2, the substrate holder 4 is lifted so that the glass substrate 2 touches the bottom surface of the chuck 1 (S2). Thereby, the glass substrate 2' is mounted and held by the chuck and the substrate holder 4. Then, the mask 3 is raised to cover the glass substrate 2 (S3).

此外’在專利文獻i所揭示之真空蒸鍍方法,記載: 玻璃基板抵接於座架構件之方法。也就是說,該方法係首 2189-7761-PF 5 1316968 先將玻璃基板,載置於基板支持台,同時,將遮罩板保持 於遮罩板搭載裝置之下面,在進行玻璃基板和遮罩板之對 位後,接合玻璃基板和遮罩板。接著,在由遮罩板來離開 遮罩板搭載裝置後,反轉基板支持台180。,使得遮罩板成 為下面。接著’在上升搬送台而抵接於遮罩板之下面後, 由基板支持台,來離開玻璃基板,然後,使得玻璃基板之 上面’抵接於座架構件。 【專利文獻】日本特開2004- 259598號公報Further, the vacuum vapor deposition method disclosed in Patent Document i describes a method in which a glass substrate is in contact with a frame member. That is to say, the method is the first 2189-7761-PF 5 1316968. The glass substrate is placed on the substrate support table, and the mask plate is held under the mask plate mounting device to perform the glass substrate and the mask. After the plates are aligned, the glass substrate and the mask are bonded. Next, after leaving the mask mounting device by the mask, the substrate support table 180 is reversed. So that the mask is below. Then, after the lift tray is brought into contact with the lower surface of the mask, the substrate support is removed from the substrate, and then the upper surface of the glass substrate is brought into contact with the frame member. [Patent Document] Japanese Patent Laid-Open Publication No. 2004-259598

I 【發明内容】 【發明所欲解決的課題】 玻璃基板之平面尺寸係例如370mmx470inin程度,其厚 .度成為0.5〜〇.7mm程度。像這樣,玻璃基板係平面尺寸比 較大而厚度變得比較薄,因此,在藉由基板夾具來支持玻 璃基板之邊緣部之狀態下,在安裝及保持於夾頭時,由於 玻璃基板之自重或重力之影響而在中央部發生彎曲。此 外,在圖6之S2,藉由箭號a所示之間隔係表示彎曲。 但是,在製造有機EL元件之狀態下,在玻璃基板,必 須在數十幅寬之每個像素(畫素),排列紅、綠及藍 之發光部,各個像素之位置精度係需要“〜以仁爪程度。 因此’在玻璃基板之中央部以發生彎曲之狀態來進行 成膜時,無法在原本需要之部位,形成圖案,無法得到有 機EL元件之製造所需要之位置精度。 本發明、其目的係提供一種可以將基板保持於平面而[Explanation] [Problem to be Solved by the Invention] The planar size of the glass substrate is, for example, about 370 mm x 470 inin, and the thickness is about 0.5 to 77 mm. In this manner, the glass substrate has a relatively large planar size and a relatively small thickness. Therefore, in the state in which the edge portion of the glass substrate is supported by the substrate holder, when the chuck is mounted and held by the chuck, the weight of the glass substrate or It is bent at the center by the influence of gravity. Further, in S2 of Fig. 6, the bending is indicated by the interval indicated by the arrow a. However, in the state in which the organic EL element is manufactured, in the glass substrate, it is necessary to arrange the red, green, and blue light-emitting portions in each of the pixels (pixels) of several tens of widths, and the positional accuracy of each pixel is required to be "~ Therefore, when a film is formed in a state where the center portion of the glass substrate is bent, it is impossible to form a pattern at a portion where it is originally required, and the positional accuracy required for the production of the organic EL element cannot be obtained. Providing a way to keep the substrate in a flat surface

2189-7761-PF 6 1316968 進行成膜之成臈裝置中之基板安裝方法。 【用以解決課題的手段】 ,了達成前述之目的,因此,本發明之成膜裝置中之 基板安裝方法’係在基板配合於遮罩圖案而完成成膜之成 膜裝置中之基板安裝方法,其特徵在藉由在基板設置 :夾頭面之前’ 一度載置於基板下部之遮罩,仍然夹緊在 每個遮罩之夾頭面,而消除在夾緊基板時之彎曲,來進行 安裝及保持。 此外,本發明係在成膜裝置來設置蒸發源和對向於該 蒸發源之夾頭而在前述之夾頭安裝及保持基板之成膜裝置 中之基板安裝方法,其特徵在於:在前述之夾頭和前述之 蒸發源之間,配置遮罩,在該遮罩和前述之夹頭之間,插 入前述之基板,使得前述之基板接近於前述之遮罩,將前 述之基板載置於前述之遮罩上,使得前述之基板和前述之 遮罩一起接近於前述之失頭,前述之基板接觸到前述之夾 頭’保持.前述之基板。 此外’本發明係在成膜裝置來設置蒸發源和對向於該 蒸發源之夾頭而在前述之夾頭安裝及保持基板之成臈裝置 中之基板安裝方法’其特徵在於:在前述之夾頭和前述之 蒸發源之間’配置遮罩,在該遮罩和前述之夾頭之間,插 入刖述之基板,使得前述之遮罩接近於前述之基板,在前 述之遮罩上,載置前述之基板,使得前述之基板和前述之 遮罩一起接近於前述之夾頭’前述之基板接觸到前述之夾 頭,保持前述之基板。 2189-7761-PF 7 1316968 此外,本發明之成膜方法,係在基板配合於遮罩圖案 凡成成膜之成膜裝置中之基板安裝方法,其特徵在於: 藉由在基板設置於夹頭面之前,—度载置於基板下部之遮 罩/乃然夾緊在母個遮罩之夾頭面,而消除在夾緊基板時 之署曲,進订女裝及保持,然後,下降前述之遮罩,進行 遮罩對於前述基板之對準定位,將遮罩接合於基板,進入 至成膜製程。 可以為了使得前述之基板載置於遮罩,因此,朝向至 導入於遮罩上方之基板,來上升遮罩,或者是朝向至遮罩 而下降導入於遮罩上方之基板所進行。 【發明效果】 基板係在载置於遮罩上之時,沿著遮罩表面而成為水 平(平面)。接著’使得載置基板之遮罩,接近於夾頭, 在基板接觸到夹頭時,基板係維持水平狀態,並且,接觸 到夹頭。如果在維持基板水平之狀態下,藉由基板夹具來 安裝及保持基板的話,則可以維持基板之水平狀態而固定 在夾頭。因此,在然後’即使是遮罩離開於基板,也可以 使得基板持續地維持水平狀態,在基板之中央部,並無發 生彎曲。 然後’在進行基板和遮罩間之對位而由蒸發源來蒸發 有機材料時’可以在基板,形成配合於設置在遮罩之開口 圖案之形狀。因此’能夠在基板上,精度良好地形成圖案。 【實施方式】2189-7761-PF 6 1316968 A method of mounting a substrate in a film forming apparatus. [Means for Solving the Problem] In order to achieve the above object, the substrate mounting method in the film forming apparatus of the present invention is a substrate mounting method in a film forming apparatus in which a substrate is bonded to a mask pattern to form a film. The feature is that the mask that is once placed on the lower portion of the substrate before the substrate is disposed: the chuck face is still clamped to the chuck face of each of the masks, and the bending at the time of clamping the substrate is eliminated. Installation and maintenance. Further, the present invention is a substrate mounting method in which a film forming apparatus is provided with an evaporation source and a chuck facing the evaporation source and a film forming apparatus for mounting and holding a substrate in the above-described chuck, characterized in that: Between the collet and the evaporation source, a mask is disposed, and the substrate is inserted between the mask and the collet, so that the substrate is close to the mask, and the substrate is placed on the foregoing The mask is such that the substrate and the mask together are close to the aforementioned head loss, and the substrate contacts the aforementioned chuck to hold the substrate. Further, the present invention is a substrate mounting method in which a vapor deposition source and a collet opposite to the evaporation source are provided in the above-described chuck mounting and holding substrate in a film forming apparatus, which is characterized in that: Between the chuck and the aforementioned evaporation source, a mask is disposed, and between the mask and the aforementioned chuck, a substrate is inserted so that the mask is close to the substrate, and the mask is The substrate is placed such that the substrate and the mask together are in close proximity to the aforementioned chuck. The substrate is in contact with the chuck, and the substrate is held. 2189-7761-PF 7 1316968 Further, the film forming method of the present invention is a substrate mounting method in a film forming apparatus in which a substrate is bonded to a mask pattern, and is characterized in that: the substrate is placed on the chuck Before the surface, the mask placed on the lower part of the substrate is clamped on the chuck surface of the mother mask, and the thread is clamped when the substrate is clamped, the women's clothing is kept and kept, and then the lower side is lowered. The mask is used to perform alignment of the mask on the substrate, and the mask is bonded to the substrate to enter a film forming process. In order to allow the substrate to be placed on the mask, the mask may be raised toward the substrate introduced above the mask, or may be lowered toward the substrate and lowered onto the substrate. [Effect of the Invention] When the substrate is placed on the mask, it becomes horizontal (planar) along the surface of the mask. Then, the mask for placing the substrate is brought close to the chuck, and when the substrate comes into contact with the chuck, the substrate is maintained in a horizontal state and is in contact with the chuck. If the substrate is mounted and held by the substrate holder while maintaining the level of the substrate, the horizontal state of the substrate can be maintained and fixed to the chuck. Therefore, even if the mask is separated from the substrate, the substrate can be continuously maintained in a horizontal state, and no bending occurs in the central portion of the substrate. Then, when the organic material is evaporated by the evaporation source while the alignment between the substrate and the mask is performed, the substrate can be formed in a shape fitted to the opening pattern provided in the mask. Therefore, it is possible to form a pattern with high precision on the substrate. [Embodiment]

2189-7761-PF 1316968 在以下’就本發明之成膜裝置中之基板安襞方法以及 成膜方法之最佳實施形態而進行說明。此外,在本實施形 L,就使用真空蒸鍍裝置來作為成膜裝置而藉由該真空蒸 鍍裝置來製造有機EL元件之形態,進行說明。圖!係真空 蒸鍍裝置之說明圖。圖2係說明夾頭、基板夾具及遮罩央 八之配置之概略仰視圖。真空蒸鍍裝置丨〇係在其底部具備 有機材料20之蒸發源12 (昇華源)同時在其上部具備夾 頭14、基板夹具16和遮罩夾具18的構造。 具體地說,有機材料2〇.之蒸發源12係具備加入有機 材料20之坩堝22,在坩堝22之外面’設置加熱•蒸發(昇 華)有機材料20之加熱器24。此外,設置在真空蒸鍍裝 置1 〇上邛之夾頭14係面對著坩堝22來進行配置而沿著水 平方向^進行配置之平板。接著,夾頭14係能夠藉由設置 在真空蒸鍍裝置10外側上部之旋轉機構(未圖示)而進行 水平旋轉。 基板夾具16係由真空蒸鍍裝置10之上部開始朝向至 下方纟進行延伸,别&部i 6a係朝向至夾頭丄4側(蒸鐘 裝置1。之中央侧)而進行彎曲之鉤型,沿著夾頭μ之側 邊而配置複數個1基板爽具16係藉由其前端部16&(灣 曲。P )而支持玻璃基板26之邊緣部,因此,設定各個前端 部16a,成為相同之高度(同一面内)。此外,基板夹具 1 6係可以藉由設置在直处笳々 在具1C録裝置1 〇外側上部之升降機 構(未圖不)而維梧久個益# 1 n a 、 丰讨谷個別端部16a位處於同一面内之狀 態,並且,能夠進行井降抵 仃开降接者,可以藉由上升基板夾具2189-7761-PF 1316968 In the following, a preferred embodiment of the substrate ampouling method and film forming method in the film forming apparatus of the present invention will be described. Further, in the embodiment L, a mode in which an organic EL device is manufactured by the vacuum vapor deposition device using a vacuum vapor deposition device as a film forming device will be described. Figure! An explanatory diagram of a vacuum evaporation apparatus. Fig. 2 is a schematic bottom plan view showing the arrangement of the chuck, the substrate holder, and the mask. The vacuum vapor deposition apparatus has a structure in which an evaporation source 12 (sublimation source) of the organic material 20 is provided at the bottom thereof, and a chuck 14, a substrate holder 16, and a mask jig 18 are provided on the upper portion thereof. Specifically, the evaporation source 12 of the organic material 2 is provided with a crucible 22 to which the organic material 20 is added, and a heater 24 for heating/evaporating (sublimating) the organic material 20 is disposed outside the crucible 22. Further, the chuck 14 provided on the vacuum vapor deposition apparatus 1 is placed facing the crucible 22 and arranged in the horizontal direction. Next, the chuck 14 can be horizontally rotated by a rotating mechanism (not shown) provided on the upper outer side of the vacuum vapor deposition apparatus 10. The substrate jig 16 is extended from the upper portion of the vacuum vapor deposition device 10 toward the lower side, and the other portion i 6a is bent toward the chuck side 4 (the center side of the steaming device 1). A plurality of one substrate cooling members 16 are disposed along the side of the chuck μ, and the edge portions of the glass substrate 26 are supported by the front end portions 16 & (Bay curve P). Therefore, the respective front end portions 16a are set. The same height (within the same side). In addition, the substrate holder 16 can be maintained by a lifting mechanism (not shown) disposed at the upper side of the 1C recording device 1 梧 梧 梧 个 # 1 1 1 1 1 1 1 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别The position is in the same plane, and the well can be lowered to the opener and the descender can be raised by the substrate

2189-7761-PF 1316968 接觸到夾頭14,呈平面狀地進行 16而使得玻璃基板26 安裝及保持。 下方St具延 =由真空蒸鏟裝置1〇之上部開 枣置1〇灯 前端部183係朝向至夹頭14侧(蒗铲 裝置1 0之中央侧)而 “,、鍍 板夹具之側邊而配置複:::型’沿著夾頭14或基 前端部!8“彎曲部該遮罩央具18係藉由其 % 1考曲σΡ)而支持遮罩28之邊緣部,因此, 疋各個前端部18a,成為相 f 口又 遮罩夾具18係可以藉父—面内)。此外, Λ错由设置在真空蒸鍍裝置1〇外側上 之升降機構(未圖示)而維持各個前端部心位處於同— 面内之狀g ’並且’月巨夠進行升降。此外,遮罩28係具備. 設置複數個之對應於有冑EL元件之各個像素之開口圖案 之遮罩薄膜28a以及保持遮罩薄膜28a周邊部之框架型之 遮罩幢框2 8 b。 接著,基板夾具16及遮罩夹具18係可以藉由設置在 真空蒸鍍裝置1 0外側上部之旋轉機構(未圖示)而一起旋 轉夹頭14。 接著’就玻璃基板26之安裝方法而進行說明。圖3係 玻璃基板之安裝製程之說明圖。此外,在遮罩夹具18上, 預先女遮罩2 8/首先’玻璃基板2 6係藉由基板搬送機構 (未圖示)而放入至真空蒸鍍裝置1〇内,插入至炎頭14 和遮罩28間。接著,玻璃基板26係隨著前述基板搬送機 構之下降動作而移動至下方,載置於基板夾具16上 (S100) 〇 2189-7761-PF 10 1316968 然後,藉由上升遮罩夾具18而移動遮罩至上方, 在遮罩28上,載置玻璃基板26(Su〇)。接著,遮罩夹 具18係持續地上升而一直到玻璃基板26接觸到央頭η之 底面(夾頭面)為止(S12G)。此外,玻璃基板26係在載 置於遮罩28上之時’沿著遮罩28而成為水平,維持該水 平狀態’並且’抵接於夾頭14。此外,玻璃基板Μ係如 果插入至真工蒸鍍裝置1Q内的話,則可以載置於遮罩Μ 上’並且’在載置於基板夾具16上之後,可以下降基板夾 具16而載置於遮罩28上。 然後,上升基板夾具16至接觸到玻璃基板Μ為止 (S130)。藉此而使得玻璃基板26,利用基板夾具μ來 維持水平狀態,並且,安裝及保持於夾頭14。接著,下降 遮罩夹具18而移動遮罩28至下方(sl4〇)。 二後使用·^置在玻璃基板26之對準定位標記和設置 在遮罩28之對準定位標記,而進行玻璃基板26和遮罩μ ^之對位。圖4係玻璃基板和遮罩間之對位之說明圖。接 著,圖4(A)係說明相機、玻璃基板及遮罩之配置之圖。 此外,圖4 ( B )係藉由相機所攝影之圖像而顯示發生位置 偏離之狀'態之圖。此外,圖4 (C)係藉由相機所攝影之圖 像而顯示位置對位之狀態之圖。 、具體地說,在玻璃基板26,至少在2個部位,設置對 準疋位標記32。設置在玻璃基板26之對準定位標記32係 例如可以设置在玻璃基才反26所對角之角部,在玻璃基板 26,形成有機EL元件之電極膜,同時,藉由相同於該電極The 2189-7761-PF 1316968 is brought into contact with the collet 14 and is carried out in a planar manner to allow the glass substrate 26 to be mounted and held. The lower St is extended by the upper part of the vacuum shovel device 1 置. The front end of the lamp 183 is oriented toward the side of the chuck 14 (the center side of the shovel device 10) and ", the side of the plate clamp And the configuration complex:::type 'supports the edge of the mask 28 along the collet 14 or the base front end! 8 "bend portion of the mask unit 18 by its %1 test σΡ), therefore, Each of the front end portions 18a serves as a phase f and a mask jig 18 can be borrowed from the parent. Further, the erroneous mechanism is provided by an elevating mechanism (not shown) provided on the outer side of the vacuum vapor deposition apparatus 1 to maintain the shape of each of the distal end portions in the same plane g ’ and the height of the anterior portion is raised and lowered. Further, the mask 28 is provided with a mask film 28a which is provided with a plurality of opening patterns corresponding to the respective pixels of the 胄EL element, and a frame type framing frame 28b which holds the peripheral portion of the mask film 28a. Next, the substrate holder 16 and the mask jig 18 can be rotated together with the chuck 14 by a rotating mechanism (not shown) provided on the outer side of the outer portion of the vacuum vapor deposition apparatus 10. Next, the method of mounting the glass substrate 26 will be described. Fig. 3 is an explanatory view of a mounting process of a glass substrate. Further, on the mask jig 18, the pre-female mask 28/first of the 'glass substrate 26' is placed in the vacuum vapor deposition apparatus 1 by a substrate transfer mechanism (not shown), and inserted into the head 14 And the mask 28. Then, the glass substrate 26 is moved downward as the substrate transfer mechanism is lowered, and placed on the substrate holder 16 (S100) 〇2189-7761-PF 10 1316968, and then moved by the rising mask jig 18 The cover is placed upward, and a glass substrate 26 (Su〇) is placed on the mask 28. Then, the mask holder 18 is continuously raised until the glass substrate 26 comes into contact with the bottom surface (the chuck surface) of the head η (S12G). Further, the glass substrate 26 is horizontally placed along the mask 28 when placed on the mask 28, and is maintained in the horizontal state & abuts against the chuck 14. Further, if the glass substrate is inserted into the vapor deposition device 1Q, it can be placed on the mask ' and "after being placed on the substrate holder 16, the substrate holder 16 can be lowered and placed on the cover. On the cover 28. Then, the substrate holder 16 is raised until it comes into contact with the glass substrate (S130). Thereby, the glass substrate 26 is maintained in a horizontal state by the substrate holder μ, and is attached and held to the chuck 14. Next, the mask jig 18 is lowered to move the mask 28 to the lower side (sl4). After that, the aligned alignment marks placed on the glass substrate 26 and the alignment marks provided on the mask 28 are used to align the glass substrate 26 with the mask μ. Fig. 4 is an explanatory view of the alignment between the glass substrate and the mask. Next, Fig. 4(A) is a view showing the arrangement of the camera, the glass substrate, and the mask. Further, Fig. 4(B) shows a state in which the positional deviation occurs by the image photographed by the camera. Further, Fig. 4(C) is a diagram showing the state of the positional alignment by the image photographed by the camera. Specifically, in the glass substrate 26, the alignment clamp mark 32 is provided at least at two locations. The alignment mark 32 provided on the glass substrate 26 can be disposed, for example, at a corner of the opposite corner of the glass substrate 26, and an electrode film of the organic EL element is formed on the glass substrate 26 while being the same as the electrode.

2189-7761-PF 11 1316968 之同樣材料而形成。接著,設置在玻璃基板26之對準定位 標。己32之形狀係可以是例如圓或點或者是十字形等。 此外’設置在遮罩28之對準定位標記34係可以設置 在對應於玻璃基板26所設置之對準定位標記32之位置, 其形狀係可以是點或圓或者是十字形等。此外,在玻璃基 板2 6之對準定位標記3 2成為圓之狀態下,可以使得遮罩 28之對準定位標記34成為點,在玻璃基板26之對準定位 標記32成為點之狀態下,可以使得遮罩28之對準定位標 記34成為不同大小之圓或者是不同之形狀。 此外’可以在真空蒸鍍裝置10,將攝影設置在玻璃基 板26之對準定位標記32和設置在遮罩28之對準定位標記 34之相機30予以設置(參考圖4(A))。 接著,如果確認藉由相機30所攝影之圖像並且在圓形 狀之對準定位標記32 ( 34)中而調整遮罩28之X (縱)、 Y (杈)、0 (旋轉)方向來放入點形狀之對準定位標記 34 ( 32 )的話,則結束玻璃基板26和遮罩28之對位(袁 考圖 4(B)、圖 4(C))。 在經過此種玻璃基板26之安裝製程後,旋轉玻璃基板 26或遮罩28’同時’藉由加熱器24而加熱•昇華有機材 料20,在玻璃基板26上’形成既定之像素圖案。藉此而 製造有機EL元件。 在此種真空蒸鍍裝置1〇之玻璃基板26之安裝方法, 玻璃基板26係在設置於爽頭14面之前,一度載置於位處 在玻璃基板26下方之遮罩28,仍然夾緊在每個遮罩28之 2189-7761-PF 12 1316968 夾頭面,因此,能夠消除在藉由基板夾具16來進行保持時 之彎曲。也就是說,即使是使用厚度變薄之玻璃基板26', 玻璃基板26係也維持水平狀態而裝設及保持在夾頭η, 因此,玻璃基板26之中央部係並無由於自重或重力而彎曲 至下方。因此,能夠在玻璃基板26上,精度良好地形成各 個像素。 此外,本實施形態之玻璃基板2 6之安裝方法係構成在 央頭14和蒸發源12之間,配置遮罩28,在該遮罩28和 ® 夾頭14之間’插入玻璃基板26,使得玻璃基板26接近於 遮罩28’將玻璃基板26載置於遮罩28上,使得玻璃基板 -26和遮罩28 一起接近於夾頭14’玻璃基板26接觸到灸頭 . 14,保持玻璃基板26,但是,並非限定於該實施形態。也 就是說’在夾頭14和蒸發源12之間,配置遮罩28,在該 遮罩28和夹頭14之間,插入玻璃基板26。接著,使得遮 罩28接近於玻璃基板26’在遮罩28上,載置玻璃基板26。 接著,可以是使得玻璃基板26和遮罩28 —起接近於爽頭 ® 14,玻璃基板26接觸到夹頭14,保持玻璃基板26之安裝 方法。此外’玻璃基板26之安裝方法係可以是在配置於夾 頭14和蒸發源12間之遮罩28上’載置玻璃基板26,使 得玻璃基板26和遮罩28 —起接近於失頭14,玻璃基板26 接觸到夾頭14,保持玻璃基板26之構造。 此外’在本實施形態,正如圖4所示,成為將進行玻 璃基板2 6和遮罩2 8間之對位之相機3 0予以設置2個之形 態,但是,並非限定於該此。也就是說,相機30係正如圖 2189-7761-PF 13 1316968 5 (A)所示,也可以設置3個,正 以設置4個。 *圖5(B)所示’也可 ,二’在本實施形態’就使用真空蒸鍍裝置1〇來作為 成而藉由該真空蒸鍍裝置1〇來製造有機η元件: ,’進仃說明’但是’並非^於該形態。也就是說, 成膜裝置中之基板安裝方法係 由二甘/ 週用於必須在成膜裝置 内而基板保持於水平(平面)來進行成膜之狀態。因此置 成膜裝置係除了真空蒸鍍裝置以外之其他之成膜裝置,例 :也可以是賤鑛裝置等。此外.,基板係並非限定在玻璃基 板。 【產業上之可利用性】 可以利用在對於有機EL基板等之圖案形成技術。 【圖式簡單說明】 圖1係真空蒸鍍裝置之說明圖。 圖2係說明夾頭、基板夹具及遮罩夾具之配置之概略 仰視圖。 圖3係玻璃基板之安裝製程之說明圊。 圖KAMO係玻璃基板和遮罩間之對位之說明圖。 圖5(A)、(B)係說明相機之配置位置之圖。 圖6係在真空蒸鍍裝置來安裝玻璃基板時之說明圖。 【主要元件符號說明】 1〜夾頭;2189-7761-PF 11 1316968 is formed of the same material. Next, an alignment target is provided on the glass substrate 26. The shape of the 32 may be, for example, a circle or a dot or a cross or the like. Further, the alignment mark 34 provided in the mask 28 may be disposed at a position corresponding to the alignment mark 32 provided by the glass substrate 26, and its shape may be a dot or a circle or a cross or the like. In addition, in a state where the alignment mark 3 2 of the glass substrate 26 is rounded, the alignment mark 34 of the mask 28 can be made a point, and in the state where the alignment mark 32 of the glass substrate 26 becomes a dot, The alignment marks 34 of the mask 28 can be made to be circles of different sizes or different shapes. Further, in the vacuum evaporation apparatus 10, the camera 30 provided with the alignment mark 32 of the glass substrate 26 and the alignment mark 34 provided in the mask 28 can be set (refer to Fig. 4(A)). Next, if the image photographed by the camera 30 is confirmed and the X (vertical), Y (杈), 0 (rotation) directions of the mask 28 are adjusted in the circular alignment alignment mark 32 (34), When the in-point shape alignment mark 34 (32) is aligned, the alignment between the glass substrate 26 and the mask 28 is ended (Yuan Kao 4 (B), Fig. 4 (C)). After the mounting process of the glass substrate 26, the glass substrate 26 or the mask 28' is rotated while the organic material 20 is heated and sublimated by the heater 24 to form a predetermined pixel pattern on the glass substrate 26. Thereby, an organic EL element is manufactured. In the method of mounting the glass substrate 26 of the vacuum evaporation apparatus 1 , the glass substrate 26 is placed on the surface of the cooling head 14 , and the mask 28 placed under the glass substrate 26 once is still clamped in the mask 28 . The 2189-7761-PF 12 1316968 chuck face of each of the masks 28 can thereby eliminate the bending when held by the substrate holder 16. That is, even if the glass substrate 26' having a reduced thickness is used, the glass substrate 26 is maintained in a horizontal state and is mounted and held on the chuck η. Therefore, the central portion of the glass substrate 26 is not caused by its own weight or gravity. Bend to the bottom. Therefore, each pixel can be formed accurately on the glass substrate 26. Further, in the method of mounting the glass substrate 26 of the present embodiment, a mask 28 is disposed between the head 14 and the evaporation source 12, and the glass substrate 26 is inserted between the mask 28 and the collet 14 so that the glass substrate 26 is inserted. The glass substrate 26 is placed on the mask 28 close to the mask 28' such that the glass substrate -26 and the mask 28 are brought close to the collet 14'. The glass substrate 26 contacts the moxibustion head. 14. The glass substrate is held. 26. However, it is not limited to this embodiment. That is, a mask 28 is disposed between the chuck 14 and the evaporation source 12, and a glass substrate 26 is inserted between the mask 28 and the chuck 14. Next, the mask 28 is placed on the mask 28 close to the glass substrate 26', and the glass substrate 26 is placed. Next, it may be such that the glass substrate 26 and the mask 28 are brought close to the shower head 14, and the glass substrate 26 is brought into contact with the chuck 14, and the method of mounting the glass substrate 26 is maintained. In addition, the mounting method of the glass substrate 26 may be to mount the glass substrate 26 on the mask 28 disposed between the chuck 14 and the evaporation source 12 such that the glass substrate 26 and the mask 28 are close to the head loss 14, The glass substrate 26 is in contact with the chuck 14 to maintain the configuration of the glass substrate 26. In the present embodiment, as shown in Fig. 4, two cameras 10 are disposed to align the glass substrate 26 and the mask 28. However, the present invention is not limited thereto. That is to say, the camera 30 is as shown in Fig. 2189-7761-PF 13 1316968 5 (A), and three or three can be set. * As shown in Fig. 5(B), in the present embodiment, an organic η element is manufactured by using the vacuum vapor deposition apparatus 1 作为. Explain that 'but' is not in this form. That is to say, the substrate mounting method in the film forming apparatus is a state in which film formation is carried out by using two gallons per week for the film to be held in the film forming apparatus while the substrate is kept horizontal (planar). Therefore, the film forming apparatus is a film forming apparatus other than the vacuum vapor deposition apparatus. For example, it may be a tantalum ore apparatus. Further, the substrate is not limited to the glass substrate. [Industrial Applicability] A pattern forming technique for an organic EL substrate or the like can be utilized. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view of a vacuum evaporation apparatus. Fig. 2 is a schematic bottom view showing the arrangement of the chuck, the substrate holder, and the mask holder. Fig. 3 is an illustration of the mounting process of the glass substrate. Figure KAMO is an explanatory view of the alignment between the glass substrate and the mask. 5(A) and (B) are diagrams showing the arrangement position of the camera. Fig. 6 is an explanatory view showing a state in which a glass substrate is mounted in a vacuum vapor deposition apparatus. [Main component symbol description] 1~ collet;

2189-7761-PF 14 1316968 2〜 玻璃基板; 3〜 遮罩; 4 基板夾具; 10- -真空蒸鍍裝 置; 14〜夾頭; 16’ 基板夾具, 16a 〜前端部; 18- -遮罩夾具; 18a 〜前端部; 26、 /玻璃基板; 28- -遮罩; 28a 〜遮罩薄膜; 28b 〜遮罩幀框; 30、 -相機; 32、 -對準定位標 記; 34- /對準定位標 記。 ❿ 152189-7761-PF 14 1316968 2~ glass substrate; 3~ mask; 4 substrate holder; 10--vacuum evaporation device; 14~ collet; 16' substrate holder, 16a ~ front end; 18- - mask clamp 18a ~ front end; 26, / glass substrate; 28 - - mask; 28a ~ mask film; 28b ~ mask frame; 30, - camera; 32, - alignment mark; 34- / alignment mark. ❿ 15

2189-7761-PF2189-7761-PF

Claims (1)

I316_ 〇5918號申請專利範圍修正本 十、申請專利範面: 1. 一種成膜裝置中之基板安裝方法 罩圖案而完成成膜, 其特徵在於: 修正曰期:ί 8.6.18年月 在基板配合於遮 藉由將基板設置在位於該成膜裝置的上部的夾頭面之 前一度將該基板載置於基板下部之遮罩、且仍然夹緊在每 個遮罩之夾頭面’而消除在夾緊基板時之彎曲,進行安裝 及保持,然後使遮罩下降,進行玻璃基板與遮罩之對準定 位。 2.—種成膜裝置中之基板安裝方法,在成膜裝置來設 置蒸發源和對向於該蒸發源之夹頭而在前述之夾頭安裝及 保持基板, 其特徵在於: 在刖述之夾頭和前述之蒸發源之間配置遮罩,在該遮 罩和前述之夾頭之間插入前述之基板; 使得前述之基板接近於前述之遮罩,將前述之基板載 置於前述之遮罩上; 使得前述之基板和前述之遮罩一起接近於前述之夾 頭’並使前述之基板接觸到前述之夾頭; 以夾具保持前述之基板;以及 使遮罩下降,進行玻璃基板與遮罩之對準定位。 3_ 一種成膜裝置中之基板安裝方法,在成膜裝置來設 置洛發源和對向於該蒸發源之夾頭而在前述之夾頭安裝及 保持基板, 2189-7761-PF1" 16 1316968 其特徵在於: 在前述之夹頭和前述之蒸發源之間配置遮罩,在該遮 罩和前述之夾頭之間插入前述之基板; 使得前述之遮罩接近於前述之基板,在前述之遮罩上 載置前述之基板; 使得前述之基板和前述之遮罩一起接近於前述之夾 頭’並使前述之基板接觸到前述之夾頭; ^ 以夹具保持前述之基板;以及 使遮罩下降,進行玻璃基板與遮罩之對準定位。 4_ 一種成膜方法,在基板配合於遮罩圖案而完成成膜 ' 之成膜裝置中之基板安裝方法, ; 其特徵在於: 藉由使夾頭面位於該成膜裝置的上部、在基板設置於 爽頭面之前一度載置於基板下部之遮罩、且仍然夾緊在每 個遮罩之夾頭面,而消除在夾緊基板時之彎曲,進行安裝 φ 及保持,然後,下降前述之遮罩,進行遮罩對於前述基板 之對準定位’將遮罩接合於基板’進入至成膜製程。 5·如申請專利範圍第4項之成膜方法,其中,為了使 仔刖述之基板載置於遮罩,因此,朝向至導入於遮罩上方 之基板而上升遮罩。 6.如申請專利範圍第4項之成膜方法,其中,為了使 传月ίι述之基板載置於遮罩,因此’朝向至遮罩而下降導入 於遮罩上方之基板所進行。 2189-7761-PF1 17I316_ 〇5918 Application Patent Revision Amendment 10, Patent Application Specification: 1. A substrate mounting method cover pattern in a film forming apparatus to complete film formation, which is characterized by: Correction period: ί 8.6.18 months on the substrate Cooperating with the mask by placing the substrate on the mask surface of the lower portion of the substrate before being placed on the chuck surface of the upper portion of the film forming apparatus, and still clamping on the chuck surface of each mask The bending of the substrate is performed, the mounting and holding are performed, and then the mask is lowered to position the glass substrate and the mask. 2. A method of mounting a substrate in a film forming apparatus, wherein an evaporation source and a chuck opposite to the evaporation source are provided in the film forming apparatus to mount and hold the substrate in the chuck, and the feature is: A mask is disposed between the chuck and the evaporation source, and the substrate is inserted between the mask and the chuck; the substrate is placed close to the mask, and the substrate is placed on the mask. Covering the substrate and the aforementioned mask together with the aforementioned chuck and bringing the aforementioned substrate into contact with the aforementioned chuck; holding the aforementioned substrate with a clamp; and lowering the mask to perform the glass substrate and the cover Alignment of the cover. 3_ A substrate mounting method in a film forming apparatus, in which a lens source is provided and a chuck opposite to the evaporation source is provided to mount and hold the substrate in the aforementioned chuck, 2189-7761-PF1" 16 1316968 Wherein: a mask is disposed between the chuck and the evaporation source, and the substrate is inserted between the mask and the chuck; the mask is adjacent to the substrate, and the mask is Mounting the substrate as described above; causing the substrate and the aforementioned mask to be close to the aforementioned chuck ' and contacting the substrate to the aforementioned chuck; ^ holding the substrate by the clamp; and lowering the mask The glass substrate is aligned with the mask. 4_ a method of forming a film, a substrate mounting method in a film forming apparatus in which a substrate is formed in a mask pattern to complete film formation, wherein: a chuck surface is disposed on an upper portion of the film forming apparatus, and is disposed on a substrate The mask placed on the lower part of the substrate before the head is still clamped to the chuck surface of each mask, eliminating the bending when clamping the substrate, mounting φ and holding, and then lowering the above The mask is masked for the alignment of the substrate to 'bond the mask to the substrate' to the film forming process. 5. The film forming method of claim 4, wherein the substrate is placed on the mask so as to be placed on the substrate above the mask, so that the mask is lifted toward the substrate. 6. The film forming method of claim 4, wherein the substrate is placed on the substrate so as to be lowered toward the mask so as to be placed on the mask. 2189-7761-PF1 17
TW095105918A 2005-02-23 2006-02-22 Method of mounting substrate in film deposition apparatus and method of depositing film TW200632117A (en)

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