JP4609757B2 - Substrate mounting method in film forming apparatus - Google Patents

Substrate mounting method in film forming apparatus Download PDF

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JP4609757B2
JP4609757B2 JP2005047815A JP2005047815A JP4609757B2 JP 4609757 B2 JP4609757 B2 JP 4609757B2 JP 2005047815 A JP2005047815 A JP 2005047815A JP 2005047815 A JP2005047815 A JP 2005047815A JP 4609757 B2 JP4609757 B2 JP 4609757B2
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substrate
mask
chuck
glass substrate
forming apparatus
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JP2006233259A (en
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達哉 片岡
兼次 長尾
謙一 斉藤
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Mitsui Engineering and Shipbuilding Co Ltd
Choshu Industry Co Ltd
Mitsui E&S Holdings Co Ltd
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Mitsui Engineering and Shipbuilding Co Ltd
Choshu Industry Co Ltd
Mitsui E&S Holdings Co Ltd
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Priority to JP2005047815A priority Critical patent/JP4609757B2/en
Priority to PCT/JP2006/303191 priority patent/WO2006090749A1/en
Priority to KR1020077016151A priority patent/KR100932140B1/en
Priority to CN2006800015532A priority patent/CN101090996B/en
Priority to TW095105918A priority patent/TW200632117A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Description

本発明は、成膜装置における基板装着方法に関するものである。   The present invention relates to a substrate mounting method in a film forming apparatus.

有機EL(Electroluminescent)素子を製造する真空蒸着装置(成膜装置)には、底部に有機材料を入れるるつぼが設けられており、るつぼの外面に有機材料を加熱・蒸発(昇華)させるヒーターが設けられている。また真空蒸着装置には、るつぼに対面して配置されたチャックと、ガラス基板の縁部と接触して、ガラス基板をチャックの底面に装着保持させる基板クランプとが設けられている。チャックは、ガラス基板を平面に維持するための平板であり、基板クランプには、昇降機構が設けられている。さらに真空蒸着装置には、有機EL素子のパターンをガラス基板に形成するためのマスクがチャックとるつぼの間に設けられている。   A vacuum vapor deposition apparatus (film forming apparatus) for manufacturing an organic EL (Electroluminescent) element is provided with a crucible for putting an organic material at the bottom, and a heater for heating and evaporating (sublimating) the organic material on the outer surface of the crucible It has been. Further, the vacuum deposition apparatus is provided with a chuck disposed so as to face the crucible and a substrate clamp that comes into contact with the edge of the glass substrate and mounts and holds the glass substrate on the bottom surface of the chuck. The chuck is a flat plate for keeping the glass substrate flat, and the substrate clamp is provided with a lifting mechanism. Further, in the vacuum deposition apparatus, a mask for forming a pattern of the organic EL element on the glass substrate is provided between the crucible and the crucible.

図6は真空蒸着装置にガラス基板を装着するときの説明図である。まずガラス基板2を基板搬送機構によりチャック1とマスク3との間に挿入して、基板クランプ4上に載せる(S1)。基板クランプ4は、ガラス基板2が載せられると上昇し、ガラス基板2をチャック1の底面に接触させる(S2)。これによりガラス基板2は、チャック1および基板クランプ4によって装着保持される。この後、マスク3が上昇して、ガラス基板2に被せられる(S3)。   FIG. 6 is an explanatory diagram when a glass substrate is mounted on the vacuum deposition apparatus. First, the glass substrate 2 is inserted between the chuck 1 and the mask 3 by the substrate transport mechanism and placed on the substrate clamp 4 (S1). The substrate clamp 4 rises when the glass substrate 2 is placed, and brings the glass substrate 2 into contact with the bottom surface of the chuck 1 (S2). Thereby, the glass substrate 2 is mounted and held by the chuck 1 and the substrate clamp 4. Thereafter, the mask 3 is raised and put on the glass substrate 2 (S3).

なお特許文献1に開示された真空蒸着方法には、ガラス基板をホルダ部材に当接させる方法が記載されている。すなわち、この方法は、まずガラス基板を基板支持台に載置するとともに、マスク板をマスク板搭載手段の下面に保持し、ガラス基板とマスク板との位置合わせを行った後に、ガラス基板とマスク板とを接合する。次に、マスク板からマスク板搭載手段を離した後、基板支持台を180°反転させてマスク板が下面となるようする。そして搬送台をマスク板の下面に当接するように上昇させた後、基板支持台からガラス基板を離し、その後ガラス基板の上面をホルダ部材に当接させる。
特開2004−259598号公報
The vacuum vapor deposition method disclosed in Patent Document 1 describes a method in which a glass substrate is brought into contact with a holder member. That is, this method first places the glass substrate on the substrate support, holds the mask plate on the lower surface of the mask plate mounting means, aligns the glass substrate and the mask plate, and then the glass substrate and the mask. Join the board. Next, after separating the mask plate mounting means from the mask plate, the substrate support is inverted 180 ° so that the mask plate becomes the lower surface. And after raising a conveyance stand so that it may contact | abut to the lower surface of a mask board, a glass substrate is separated from a substrate support stand, and the upper surface of a glass substrate is made to contact | abut to a holder member after that.
JP 2004-259598 A

ガラス基板の平面サイズは、例えば370mm×470mm程度であり、その厚さは0.5〜0.7mm程度ある。このようにガラス基板は、平面サイズが大きい割に厚さが薄くなっているので、ガラス基板の縁部を基板クランプで支えた状態でチャックに装着保持されると、ガラス基板の自重や、重力の影響により中央部に撓みが発生する。なお図6のS2において、矢印Aで示す間隔が撓みを示している。   The planar size of the glass substrate is, for example, about 370 mm × 470 mm, and the thickness thereof is about 0.5 to 0.7 mm. As described above, since the glass substrate is thin for a large plane size, if the glass substrate is mounted and held on the chuck with the edge of the glass substrate supported by the substrate clamp, the glass substrate's own weight or gravity Due to the influence, the central portion is bent. In S2 of FIG. 6, the interval indicated by the arrow A indicates the deflection.

ところで、有機EL素子を製造する場合、ガラス基板には、数十μm幅の画素(ピクセル)毎に赤、緑および青の発光部を並べなくてはならず、各画素の位置精度は±5〜±3μm程度必要である。   By the way, when manufacturing an organic EL element, red, green, and blue light emitting portions must be arranged for each pixel (pixel) having a width of several tens of μm on a glass substrate, and the positional accuracy of each pixel is ± 5. About ± 3 μm is required.

したがって、ガラス基板の中央部に撓みが生じた状態で成膜を行うと、本来必要とする箇所にパターンを形成することができず、有機EL素子の製造に必要とされる位置精度を得ることができない。   Therefore, when film formation is performed in a state where the central portion of the glass substrate is bent, a pattern cannot be formed at a place where it is originally required, and position accuracy required for manufacturing an organic EL element can be obtained. I can't.

本発明は、基板を平面に保って成膜を行える成膜装置における基板装着方法を提供することを目的とする。   An object of this invention is to provide the board | substrate mounting method in the film-forming apparatus which can form into a film, keeping a board | substrate flat.

上記目的を達成するために、本発明に係る成膜装置における基板装着方法は、また成膜装置に蒸発源と、この蒸発源に対向させたチャックとを設け、前記チャックに基板を装着保持させる成膜装置における基板装着方法であって、前記チャックと前記蒸発源との間に配置したマスクと、前記チャックとの間に前記基板を挿入し、前記基板を前記マスクに近づけて、前記基板を前記マスク上に載せ、前記基板とともに前記マスクを前記チャックに近づけて、前記基板を前記チャックに接触させ、前記基板を保持し、その後、マスクを下方に移動させ、ガラス基板に設けられたアライメントマークと、マスクに設けられたアライメントマークとを用いて、ガラス基板とマスクとの位置合わせを行わせる、ことを特徴としている。 In order to achieve the above object, the substrate mounting method in the film forming apparatus according to the present invention is also provided with an evaporation source in the film forming apparatus and a chuck opposed to the evaporation source, and the chuck mounts and holds the substrate. A substrate mounting method in a film forming apparatus, comprising: a mask disposed between the chuck and the evaporation source; and the substrate is inserted between the chuck, the substrate is brought close to the mask, and the substrate is An alignment mark provided on the glass substrate, placed on the mask, bringing the mask close to the chuck together with the substrate, bringing the substrate into contact with the chuck, holding the substrate, and then moving the mask downward. And alignment of the glass substrate and the mask is performed using alignment marks provided on the mask .

また成膜装置に蒸発源と、この蒸発源に対向させたチャックとを設け、前記チャックに基板を装着保持させる成膜装置における基板装着方法であって、前記チャックと前記蒸発源との間に配置したマスクと、前記チャックとの間に前記基板を挿入し、前記マスクを前記基板に近づけて、前記マスク上に前記基板を載せ、前記基板とともに前記マスクを前記チャックに近づけて、前記基板を前記チャックに接触させ、前記基板を保持し、その後、マスクを下方に移動させ、ガラス基板に設けられたアライメントマークと、マスクに設けられたアライメントマークとを用いて、ガラス基板とマスクとの位置合わせを行わせる、ことを特徴としている。 Further, the substrate deposition method in the film deposition apparatus is provided with an evaporation source and a chuck opposed to the evaporation source in the film deposition apparatus, and the substrate is mounted and held on the chuck, between the chuck and the evaporation source. The substrate is inserted between the arranged mask and the chuck, the mask is brought close to the substrate, the substrate is placed on the mask, the mask is brought close to the chuck together with the substrate, and the substrate is The position of the glass substrate and the mask is brought into contact with the chuck, holding the substrate, and then moving the mask downward, using the alignment mark provided on the glass substrate and the alignment mark provided on the mask. It is characterized by letting you match .

また成膜装置に蒸発源と、この蒸発源に対向させたチャックとを設け、前記チャックに基板を装着保持させる成膜装置における基板装着方法であって、前記チャックと前記蒸発源との間に配置したマスク上に前記基板を載せ、前記基板とともに前記マスクを前記チャックに近づけて、前記基板を前記チャックに接触させ、前記基板を保持し、その後、マスクを下方に移動させ、ガラス基板に設けられたアライメントマークと、マスクに設けられたアライメントマークとを用いて、ガラス基板とマスクとの位置合わせを行わせる、ことを特徴としている。 Further, the substrate deposition method in the film deposition apparatus is provided with an evaporation source and a chuck opposed to the evaporation source in the film deposition apparatus, and the substrate is mounted and held on the chuck, between the chuck and the evaporation source. The substrate is placed on the arranged mask, the mask is brought close to the chuck together with the substrate, the substrate is brought into contact with the chuck, the substrate is held, and then the mask is moved downward to be provided on the glass substrate. The alignment between the glass substrate and the mask is performed using the alignment mark provided and the alignment mark provided on the mask .

基板は、マスク上に載せられると、マスク表面に沿って水平(平面)となる。そして基板が載せられているマスクをチャックに近づけて、基板をチャックに接触させると、基板は水平状態を維持しつつチャックに接触される。基板の水平を維持した状態で、基板を基板クランプによって装着保持すれば、基板の水平状態を維持してチャックに固定することができる。したがって、この後マスクが基板から離れたとしても、基板は水平状態を維持し続けることができ、基板の中央部に撓みが発生することがない。   When the substrate is placed on the mask, it becomes horizontal (planar) along the mask surface. When the mask on which the substrate is placed is brought close to the chuck and the substrate is brought into contact with the chuck, the substrate is brought into contact with the chuck while maintaining a horizontal state. If the substrate is mounted and held by the substrate clamp while maintaining the level of the substrate, the level of the substrate can be maintained and fixed to the chuck. Therefore, even if the mask is moved away from the substrate thereafter, the substrate can continue to be maintained in a horizontal state, and no bending occurs in the central portion of the substrate.

この後、基板とマスクとの位置合わせを行って蒸発源から有機材料を蒸発させると、マスクに設けられた開口パターンに応じた形状を基板に形成することができる。したがって基板上に精度良くパターンを形成することができる。   Thereafter, when the organic material is evaporated from the evaporation source by aligning the substrate and the mask, a shape corresponding to the opening pattern provided in the mask can be formed on the substrate. Therefore, a pattern can be formed on the substrate with high accuracy.

以下に、本発明に係る成膜装置における基板装着方法の最良の実施形態について説明する。なお本実施形態では、成膜装置として真空蒸着装置を用い、この真空蒸着装置で有機EL素子を製造する形態について説明する。図1は真空蒸着装置の説明図である。図2はチャック、基板クランプおよびマスククランプの配置を説明する概略底面図である。真空蒸着装置10は、その底部に有機材料20の蒸発源12(昇華源)を備えるとともに、その上部にチャック14、基板クランプ16およびマスククランプ18を備えた構成である。   Hereinafter, the best embodiment of the substrate mounting method in the film forming apparatus according to the present invention will be described. In the present embodiment, a mode in which a vacuum vapor deposition apparatus is used as a film forming apparatus and an organic EL element is manufactured using the vacuum vapor deposition apparatus will be described. FIG. 1 is an explanatory diagram of a vacuum deposition apparatus. FIG. 2 is a schematic bottom view illustrating the arrangement of the chuck, the substrate clamp, and the mask clamp. The vacuum deposition apparatus 10 has a configuration in which an evaporation source 12 (sublimation source) of the organic material 20 is provided at the bottom, and a chuck 14, a substrate clamp 16 and a mask clamp 18 are provided at the top thereof.

具体的には、有機材料20の蒸発源12は、有機材料20が入れられるるつぼ22を備えており、るつぼ22の外面に有機材料20を加熱・蒸発(昇華)させるヒーター24が設けられている。また真空蒸着装置10の上部に設けられたチャック14は、るつぼ22に対面して配設されており、水平方向に沿って配置された平板である。そしてチャック14は、真空蒸着装置10の外側上部に設けられた回転機構(不図示)によって水平回転可能となっている。   Specifically, the evaporation source 12 of the organic material 20 includes a crucible 22 in which the organic material 20 is placed, and a heater 24 that heats and evaporates (sublimates) the organic material 20 is provided on the outer surface of the crucible 22. . The chuck 14 provided on the upper portion of the vacuum vapor deposition apparatus 10 is a flat plate disposed in the horizontal direction so as to face the crucible 22. The chuck 14 can be horizontally rotated by a rotation mechanism (not shown) provided on the outer upper portion of the vacuum deposition apparatus 10.

基板クランプ16は、真空蒸着装置10の上部から下方に向かって延び、先端部16aがチャック14側(蒸着装置の中央側)に向けて折り曲げられた鉤型であり、チャック14の側縁に沿って複数個が配設されている。この基板クランプ16は、その先端部16a(折曲げ部)でガラス基板26の縁部を支えるために、各先端部16aが同じ高さ(同一面内)になるように設定されている。また基板クランプ16は、真空蒸着装置10の外側上部に設けられた昇降機構(不図示)によって、各先端部16aが同一面内にある状態を維持しつつ昇降可能になっている。そして基板クランプ16が上昇することによって、ガラス基板26をチャック14に接触させて、平面状に装着保持させることが可能になっている。   The substrate clamp 16 extends downward from the upper part of the vacuum deposition apparatus 10, and is a saddle type in which a tip end portion 16 a is bent toward the chuck 14 side (the center side of the deposition apparatus), and extends along the side edge of the chuck 14. A plurality of them are arranged. The substrate clamp 16 is set so that the tip portions 16a have the same height (in the same plane) in order to support the edge portion of the glass substrate 26 by the tip portion 16a (bending portion). Further, the substrate clamp 16 can be moved up and down by an elevating mechanism (not shown) provided on the outer upper portion of the vacuum vapor deposition apparatus 10 while maintaining the state in which the tip portions 16a are in the same plane. When the substrate clamp 16 is raised, the glass substrate 26 can be brought into contact with the chuck 14 and mounted and held in a flat shape.

マスククランプ18は、真空蒸着装置10の上部から下方に向かって延び、先端部18aがチャック14側(蒸着装置の中央側)に向けて折り曲げられた鉤型であり、チャック14や基板クランプ16の側縁に沿って複数個が配設されている。このマスククランプ18は、その先端部18a(折曲げ部)でマスク28の縁部を支えるために、各先端部18aが同じ高さ(同一面内)になるように設定されている。またマスククランプ18は、真空蒸着装置10の外側上部に設けられた昇降機構(不図示)によって、各先端部18aが同一面内にある状態を維持しつつ昇降可能になっている。なおマスク28は、有機EL素子の各画素に対応する開口パターンが複数設けられたマスクフィルム28aと、マスクフィルム28aの周縁部を保持する枠型のマスクフレーム28bとを備えている。   The mask clamp 18 extends downward from the upper part of the vacuum vapor deposition apparatus 10 and is a saddle type in which a tip end portion 18a is bent toward the chuck 14 side (the central side of the vapor deposition apparatus). A plurality are arranged along the side edges. The mask clamp 18 is set so that the tip portions 18a have the same height (in the same plane) in order to support the edge portion of the mask 28 with the tip portions 18a (folded portions). The mask clamp 18 can be moved up and down while maintaining the state in which the tip portions 18a are in the same plane by an elevating mechanism (not shown) provided on the upper outer portion of the vacuum deposition apparatus 10. The mask 28 includes a mask film 28a provided with a plurality of opening patterns corresponding to each pixel of the organic EL element, and a frame-shaped mask frame 28b that holds the peripheral portion of the mask film 28a.

そして基板クランプ16およびマスククランプ18は、真空蒸着装置10の外側上部に設けられた回転機構(不図示)によって、チャック14とともに回転することが可能になっている。   The substrate clamp 16 and the mask clamp 18 can be rotated together with the chuck 14 by a rotation mechanism (not shown) provided on the outer upper portion of the vacuum deposition apparatus 10.

次に、ガラス基板26の装着方法について説明する。図3はガラス基板の装着工程の説明図である。なおマスククランプ18上には、予めマスク28が配設されている。まずガラス基板26は、基板搬送機構(不図示)によって真空蒸着装置10内に入れられ、チャック14とマスク28との間に挿入される。そしてガラス基板26は、前記基板搬送機構の下降動作とともに下方へ移動されて、基板クランプ16上に載せられる(S100)。   Next, a method for mounting the glass substrate 26 will be described. FIG. 3 is an explanatory diagram of a glass substrate mounting process. A mask 28 is disposed on the mask clamp 18 in advance. First, the glass substrate 26 is placed in the vacuum evaporation apparatus 10 by a substrate transport mechanism (not shown) and inserted between the chuck 14 and the mask 28. Then, the glass substrate 26 is moved downward together with the lowering operation of the substrate transport mechanism and placed on the substrate clamp 16 (S100).

この後、マスククランプ18を上昇させることによりマスク28を上方に移動させ、マスク28上にガラス基板26を載せる(S110)。そしてマスククランプ18は、ガラス基板26がチャック14の底面(チャック面)に接触するまで上昇され続ける(S120)。なおガラス基板26は、マスク28上に載置されるとマスク28に沿って水平になり、この水平状態を維持しつつチャック14に当接される。なおガラス基板26は、真空蒸着装置10内に挿入されたらマスク28上に載せられてもよく、また基板クランプ16上に載せられた後、基板クランプ16を下降させてマスク28上に基板を載せてもよい。   Thereafter, the mask clamp 18 is raised to move the mask 28 upward, and the glass substrate 26 is placed on the mask 28 (S110). The mask clamp 18 continues to be raised until the glass substrate 26 contacts the bottom surface (chuck surface) of the chuck 14 (S120). When the glass substrate 26 is placed on the mask 28, the glass substrate 26 becomes horizontal along the mask 28, and is brought into contact with the chuck 14 while maintaining this horizontal state. The glass substrate 26 may be placed on the mask 28 when inserted into the vacuum evaporation apparatus 10, or after being placed on the substrate clamp 16, the substrate clamp 16 is lowered and the substrate is placed on the mask 28. May be.

この後、基板クランプ16をガラス基板26に接触するまで上昇させる(S130)。これによりガラス基板26は、基板クランプ16により水平状態を維持しつつチャック14に装着保持される。そしてマスククランプ18を下降させて、マスク28を下方に移動させる(S140)。   Thereafter, the substrate clamp 16 is raised until it contacts the glass substrate 26 (S130). Thus, the glass substrate 26 is mounted and held on the chuck 14 while maintaining the horizontal state by the substrate clamp 16. Then, the mask clamp 18 is lowered and the mask 28 is moved downward (S140).

この後、ガラス基板26に設けられたアライメントマークと、マスク28に設けられたアライメントマークとを用いて、ガラス基板26とマスク28との位置合わせが行われる。図4はガラス基板とマスクとの位置合わせの説明図である。そして図4(A)はカメラ、ガラス基板およびマスクの配置を説明する図である。また図4(B)はカメラで撮像された画像であって、位置ズレが生じている場合を示す図である。さらに図4(C)はカメラで撮像された画像であって、位置が合っている場合を示す図である。   Thereafter, the alignment between the glass substrate 26 and the mask 28 is performed using the alignment mark provided on the glass substrate 26 and the alignment mark provided on the mask 28. FIG. 4 is an explanatory diagram of alignment between the glass substrate and the mask. FIG. 4A illustrates the arrangement of the camera, the glass substrate, and the mask. FIG. 4B is an image captured by a camera and shows a case where a positional deviation has occurred. Further, FIG. 4C is an image captured by the camera and showing a case where the positions are correct.

具体的には、ガラス基板26には、少なくとも2箇所にアライメントマーク32が設けられている。ガラス基板26に設けられたアライメントマーク32は、例えばガラス基板26の対角する角部に設けられ、ガラス基板26に有機EL素子の電極膜を形成するのと同時に、この電極と同じ材料で形成されればよい。そしてガラス基板26に設けられるアライメントマーク32の形状は、例えば丸や点若しくは十字形等であればよい。   Specifically, the glass substrate 26 is provided with alignment marks 32 in at least two places. The alignment mark 32 provided on the glass substrate 26 is provided, for example, at a corner portion opposite to the glass substrate 26 and is formed of the same material as this electrode at the same time that the electrode film of the organic EL element is formed on the glass substrate 26. It only has to be done. The shape of the alignment mark 32 provided on the glass substrate 26 may be, for example, a circle, a dot, or a cross.

またマスク28に設けられたアライメントマーク34は、ガラス基板26に設けられたアライメントマーク32に対応した位置に設けられればよく、その形状は点や丸若しくは十字形等であればよい。なおガラス基板26のアライメントマーク32を丸とした場合は、マスク28のアライメントマーク34を点にすればよく、ガラス基板26のアライメントマーク32を点とした場合は、マスク28のアライメントマーク34を大きさの異なる丸若しくは異なる形状にすればよい。   The alignment mark 34 provided on the mask 28 may be provided at a position corresponding to the alignment mark 32 provided on the glass substrate 26, and the shape may be a dot, a circle, a cross, or the like. If the alignment mark 32 on the glass substrate 26 is round, the alignment mark 34 on the mask 28 may be used as a dot. If the alignment mark 32 on the glass substrate 26 is used as a dot, the alignment mark 34 on the mask 28 is enlarged. What is necessary is just to make it a different circle or a different shape.

さらに真空蒸着装置10には、ガラス基板26に設けられたアライメントマーク32と、マスク28に設けられたアライメントマーク34とを撮像するカメラ30を設けておけばよい(図4(A)参照)。   Furthermore, the vacuum deposition apparatus 10 may be provided with a camera 30 that images the alignment marks 32 provided on the glass substrate 26 and the alignment marks 34 provided on the mask 28 (see FIG. 4A).

そしてカメラ30で撮像された画像を確認しつつ、円形状のアライメントマーク32(34)の中に、点形状のアライメントマーク34(32)が入るようにマスク28のX(縦),Y(横)、θ(回転)方向を調整すれば、ガラス基板26とマスク28との位置合わせが終了する(図4(B),(C)参照)。   Then, while confirming the image captured by the camera 30, X (vertical) and Y (horizontal) of the mask 28 so that the dot-shaped alignment mark 34 (32) is placed in the circular alignment mark 32 (34). If the θ (rotation) direction is adjusted, the alignment between the glass substrate 26 and the mask 28 is completed (see FIGS. 4B and 4C).

このようなガラス基板26の装着工程を経た後、ガラス基板26やマスク28を回転させるとともに、ヒーター24によって有機材料20を加熱・昇華させて、ガラス基板26上に所定のパターンを形成する。これにより有機EL素子が製造される。   After the glass substrate 26 mounting process, the glass substrate 26 and the mask 28 are rotated, and the organic material 20 is heated and sublimated by the heater 24 to form a predetermined pattern on the glass substrate 26. Thereby, an organic EL element is manufactured.

このような真空蒸着装置10におけるガラス基板26装着方法では、ガラス基板26は、チャック14面に設置される前に、ガラス基板26の下方にあるマスク28に一度載せられ、そのままマスク28ごとチャック面にクランプされるので、基板クランプ16時の撓みを無くすことができる。すなわち厚さの薄いガラス基板26を用いても、ガラス基板26は水平状態を維持してチャック14に装着保持されるので、ガラス基板26の中央部が自重や重力によって下方に撓むことがない。したがってガラス基板26上に精度良く各画素を形成することができる。   In such a method of mounting the glass substrate 26 in the vacuum deposition apparatus 10, the glass substrate 26 is once mounted on the mask 28 below the glass substrate 26 before being placed on the chuck 14 surface, and the mask surface together with the mask 28 as it is. Therefore, the bending at 16 o'clock of the substrate clamp can be eliminated. That is, even if a thin glass substrate 26 is used, the glass substrate 26 is maintained in a horizontal state and is held by the chuck 14, so that the central portion of the glass substrate 26 does not bend downward due to its own weight or gravity. . Therefore, each pixel can be formed on the glass substrate 26 with high accuracy.

なお本実施形態のガラス基板26の装着方法は、チャック14と蒸発源12との間に配置したマスク28と、チャック14との間にガラス基板26を挿入し、ガラス基板26をマスク28に近づけて、ガラス基板26をマスク28上に載せ、ガラス基板26とともにマスク28をチャック14に近づけて、ガラス基板26をチャック14に接触させ、ガラス基板26を保持する構成であるが、この形態に限定されることはない。すなわち、まずチャック14と蒸発源12との間に配置したマスク28と、チャック14との間にガラス基板26を挿入する。次に、マスク28をガラス基板26に近づけて、マスク28上にガラス基板26を載せる。そしてガラス基板26とともにマスク28をチャック14に近づけて、ガラス基板26をチャック14に接触させ、ガラス基板26を保持する装着方法であってもよい。またガラス基板26の装着方法は、チャック14と蒸発源12との間に配置したマスク28上にガラス基板26を載せ、ガラス基板26とともにマスク28をチャック14に近づけて、ガラス基板26をチャック14に接触させ、ガラス基板26を保持する構成であってもよい。   In this embodiment, the glass substrate 26 is mounted by inserting the glass substrate 26 between the chuck 28 and the mask 28 disposed between the chuck 14 and the evaporation source 12 and bringing the glass substrate 26 close to the mask 28. The glass substrate 26 is placed on the mask 28, the mask 28 is brought close to the chuck 14 together with the glass substrate 26, the glass substrate 26 is brought into contact with the chuck 14, and the glass substrate 26 is held. It will never be done. That is, first, the glass substrate 26 is inserted between the mask 28 disposed between the chuck 14 and the evaporation source 12 and the chuck 14. Next, the mask 28 is brought close to the glass substrate 26, and the glass substrate 26 is placed on the mask 28. Then, a mounting method may be used in which the mask 28 is brought close to the chuck 14 together with the glass substrate 26, the glass substrate 26 is brought into contact with the chuck 14, and the glass substrate 26 is held. The glass substrate 26 is mounted by placing the glass substrate 26 on a mask 28 arranged between the chuck 14 and the evaporation source 12, bringing the mask 28 close to the chuck 14 together with the glass substrate 26, and attaching the glass substrate 26 to the chuck 14. The glass substrate 26 may be held in contact with the substrate.

なお本実施形態では、図4に示すように、ガラス基板26とマスク28との位置合わせを行うカメラ30が2つ設けられた形態であるが、これに限定されることはない。すなわちカメラ30は、図5(A)に示すように3個設けることもでき、図5(B)に示すように4個設けることもできる。   In the present embodiment, as shown in FIG. 4, two cameras 30 for aligning the glass substrate 26 and the mask 28 are provided. However, the present invention is not limited to this. That is, three cameras 30 can be provided as shown in FIG. 5A, and four cameras 30 can be provided as shown in FIG.

また本実施形態では、成膜装置として真空蒸着装置10を用い、この真空蒸着装置10で有機EL素子を製造する形態について説明したが、この形態に限定されることはない。すなわち成膜装置における基板装着方法は、成膜装置内で基板を水平(平面)に保って成膜を行う必要がある場合に適用することができる。したがって成膜装置は、真空蒸着装置以外の他の成膜装置、例えばスパッタ装置等であってもよい。また基板は、ガラス基板に限定されることはない。   Moreover, although this embodiment demonstrated the form which manufactures an organic EL element with this vacuum vapor deposition apparatus 10 using the vacuum vapor deposition apparatus 10 as a film-forming apparatus, it is not limited to this form. That is, the substrate mounting method in the film forming apparatus can be applied when it is necessary to perform film formation while keeping the substrate horizontal (planar) in the film forming apparatus. Therefore, the film forming apparatus may be a film forming apparatus other than the vacuum vapor deposition apparatus, such as a sputtering apparatus. Further, the substrate is not limited to a glass substrate.

真空蒸着装置の説明図である。It is explanatory drawing of a vacuum evaporation system. チャック、基板クランプおよびマスククランプの配置を説明する概略底面図である。It is a schematic bottom view explaining arrangement | positioning of a chuck | zipper, a board | substrate clamp, and a mask clamp. ガラス基板の装着工程の説明図である。It is explanatory drawing of the mounting process of a glass substrate. ガラス基板とマスクとの位置合わせの説明図である。It is explanatory drawing of position alignment with a glass substrate and a mask. カメラの配設位置を説明する図である。It is a figure explaining the arrangement | positioning position of a camera. 真空蒸着装置にガラス基板を装着するときの説明図である。It is explanatory drawing when attaching a glass substrate to a vacuum evaporation system.

符号の説明Explanation of symbols

10………真空蒸着装置、14………チャック、16………基板クランプ、18………マスククランプ、26………ガラス基板、28………マスク、30………カメラ。 DESCRIPTION OF SYMBOLS 10 ......... Vacuum evaporation apparatus, 14 ......... Chuck, 16 ...... Substrate clamp, 18 ......... Mask clamp, 26 ......... Glass substrate, 28 ...... Mask, 30 ...... Camera.

Claims (3)

成膜装置に蒸発源と、この蒸発源に対向させたチャックとを設け、前記チャックに基板を装着保持させる成膜装置における基板装着方法であって、
前記チャックと前記蒸発源との間に配置したマスクと、前記チャックとの間に前記基板を挿入し、
前記基板を前記マスクに近づけて、前記基板を前記マスク上に載せ、
前記基板とともに前記マスクを前記チャックに近づけて、前記基板を前記チャックに接触させ、
前記基板を保持し、
その後、マスクを下方に移動させ、ガラス基板に設けられたアライメントマークと、マスクに設けられたアライメントマークとを用いて、ガラス基板とマスクとの位置合わせを行わせる
ことを特徴とする成膜装置における基板装着方法。
A substrate mounting method in a film forming apparatus in which an evaporation source and a chuck facing the evaporation source are provided in the film forming apparatus, and the substrate is mounted and held on the chuck,
A mask disposed between the chuck and the evaporation source, and the substrate inserted between the chuck and
Bringing the substrate close to the mask and placing the substrate on the mask;
The mask is brought close to the chuck together with the substrate, the substrate is brought into contact with the chuck,
Holding the substrate ,
Thereafter, the mask is moved downward, and the alignment between the glass substrate and the mask is performed using the alignment mark provided on the glass substrate and the alignment mark provided on the mask .
A substrate mounting method in a film forming apparatus.
成膜装置に蒸発源と、この蒸発源に対向させたチャックとを設け、前記チャックに基板を装着保持させる成膜装置における基板装着方法であって、
前記チャックと前記蒸発源との間に配置したマスクと、前記チャックとの間に前記基板を挿入し、
前記マスクを前記基板に近づけて、前記マスク上に前記基板を載せ、
前記基板とともに前記マスクを前記チャックに近づけて、前記基板を前記チャックに接触させ、
前記基板を保持し、
その後、マスクを下方に移動させ、ガラス基板に設けられたアライメントマークと、マスクに設けられたアライメントマークとを用いて、ガラス基板とマスクとの位置合わせを行わせる
ことを特徴とする成膜装置における基板装着方法。
A substrate mounting method in a film forming apparatus in which an evaporation source and a chuck facing the evaporation source are provided in the film forming apparatus, and the substrate is mounted and held on the chuck,
A mask disposed between the chuck and the evaporation source, and the substrate inserted between the chuck and
Close the mask to the substrate and place the substrate on the mask;
The mask is brought close to the chuck together with the substrate, the substrate is brought into contact with the chuck,
Holding the substrate ,
Thereafter, the mask is moved downward, and the alignment between the glass substrate and the mask is performed using the alignment mark provided on the glass substrate and the alignment mark provided on the mask .
A substrate mounting method in a film forming apparatus.
成膜装置に蒸発源と、この蒸発源に対向させたチャックとを設け、前記チャックに基板を装着保持させる成膜装置における基板装着方法であって、
前記チャックと前記蒸発源との間に配置したマスク上に前記基板を載せ、
前記基板とともに前記マスクを前記チャックに近づけて、前記基板を前記チャックに接触させ、
前記基板を保持し、
その後、マスクを下方に移動させ、ガラス基板に設けられたアライメントマークと、マスクに設けられたアライメントマークとを用いて、ガラス基板とマスクとの位置合わせを行わせる
ことを特徴とする成膜装置における基板装着方法。
A substrate mounting method in a film forming apparatus in which an evaporation source and a chuck facing the evaporation source are provided in the film forming apparatus, and the substrate is mounted and held on the chuck,
Placing the substrate on a mask disposed between the chuck and the evaporation source;
The mask is brought close to the chuck together with the substrate, the substrate is brought into contact with the chuck,
Holding the substrate ,
Thereafter, the mask is moved downward, and the alignment between the glass substrate and the mask is performed using the alignment mark provided on the glass substrate and the alignment mark provided on the mask .
A substrate mounting method in a film forming apparatus.
JP2005047815A 2005-02-23 2005-02-23 Substrate mounting method in film forming apparatus Expired - Fee Related JP4609757B2 (en)

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KR1020077016151A KR100932140B1 (en) 2005-02-23 2006-02-22 Substrate mounting method and film deposition method in film deposition apparatus
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