JP2024037209A - Film-forming equipment, driving method of film-forming equipment, and film-forming method - Google Patents

Film-forming equipment, driving method of film-forming equipment, and film-forming method Download PDF

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JP2024037209A
JP2024037209A JP2022141850A JP2022141850A JP2024037209A JP 2024037209 A JP2024037209 A JP 2024037209A JP 2022141850 A JP2022141850 A JP 2022141850A JP 2022141850 A JP2022141850 A JP 2022141850A JP 2024037209 A JP2024037209 A JP 2024037209A
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substrate
mask
film
film forming
forming apparatus
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博 石井
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2022141850A priority Critical patent/JP2024037209A/en
Priority to PCT/JP2023/021329 priority patent/WO2024053192A1/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

【課題】吸着部材に対して、基板を安定した状態で吸着させることのできる成膜装置、成膜装置の駆動方法及び成膜方法を提供する。【解決手段】基板Sの成膜側の面とは反対側の面を吸着する静電チャック31と、少なくとも静電チャック31に基板Sが吸着される前の時点において、基板Sの周縁を支持する基板支持部材41と、基板Sの成膜側に配されるマスクMを支持するマスク台54と、を備え、マスク台54に支持されたマスクMに対して、基板支持部材41に支持された基板Sを接触させた状態で、静電チャック31による基板Sを吸着する吸着力が生ずることを特徴とする。【選択図】図5[Problem] To provide a film formation apparatus capable of attracting a substrate to an attraction member in a stable state, a method for driving the film formation apparatus, and a film formation method. [Solution] The apparatus includes an electrostatic chuck 31 for attracting the surface of the substrate S opposite to the surface on which the substrate is to be film-formed, a substrate support member 41 for supporting the periphery of the substrate S at least before the substrate S is attracted to the electrostatic chuck 31, and a mask table 54 for supporting a mask M arranged on the film-formation side of the substrate S, and is characterized in that an attraction force for attracting the substrate S by the electrostatic chuck 31 is generated when the substrate S supported by the substrate support member 41 is in contact with the mask M supported by the mask table 54. [Selected Figure] Figure 5

Description

本発明は、成膜装置、成膜装置の駆動方法及び成膜方法に関する。 The present invention relates to a film forming apparatus, a method for driving the film forming apparatus, and a film forming method.

従来、成膜装置において、基板の成膜側の面とは反対側の面を吸着する吸着部材を備える技術が知られている。 2. Description of the Related Art Conventionally, a technique is known in which a film forming apparatus is provided with an adsorption member that adsorbs a surface of a substrate opposite to a surface on the film formation side.

特開2019-99910号公報JP2019-99910A

近年、基板の大判化が進んでおり、吸着部材に基板を吸着する前の状態において、基板が大きく撓んでいると、吸着部材に対して基板を適切に吸着するのが難しいことがある。 In recent years, substrates have become larger in size, and if the substrate is significantly bent before being adsorbed to the adsorption member, it may be difficult to properly adsorb the substrate to the adsorption member.

本発明の成膜装置は、
基板の成膜側の面とは反対側の面を吸着する吸着部材と、
少なくとも前記吸着部材に前記基板が吸着される前の時点において、前記基板周縁を支持する基板支持部材と、
前記基板の成膜側に配されるマスクを支持するマスク支持部材と、
を備え、
前記マスク支持部材に支持された前記マスクに対して、前記基板支持部材に支持された前記基板を接触させた状態で、前記吸着部材による前記基板を吸着する吸着力が生ずることを特徴とする。
The film forming apparatus of the present invention includes:
an adsorption member that adsorbs the surface of the substrate opposite to the film formation side;
a substrate support member that supports the peripheral edge of the substrate at least before the substrate is attracted to the attraction member;
a mask support member that supports a mask disposed on the film formation side of the substrate;
Equipped with
The method is characterized in that when the substrate supported by the substrate support member is brought into contact with the mask supported by the mask support member, an adsorption force is generated to adsorb the substrate by the adsorption member.

以上説明したように、本発明によれば、吸着部材に対して、基板を安定した状態で吸着させることができる。 As described above, according to the present invention, the substrate can be stably attracted to the attraction member.

成膜装置の概略構成図。A schematic configuration diagram of a film forming apparatus. 成膜装置の要部の動作説明図。FIG. 2 is an explanatory diagram of the operation of the main parts of the film forming apparatus. 成膜装置の要部の動作説明図。FIG. 2 is an explanatory diagram of the operation of the main parts of the film forming apparatus. 成膜装置の要部の動作説明図。FIG. 2 is an explanatory diagram of the operation of the main parts of the film forming apparatus. 成膜装置の要部の動作説明図。FIG. 3 is an explanatory diagram of the operation of main parts of the film forming apparatus. 成膜装置の要部の動作説明図。FIG. 2 is an explanatory diagram of the operation of the main parts of the film forming apparatus. 有機EL表示装置の説明図。An explanatory diagram of an organic EL display device.

以下に図面を参照して、この発明を実施するための形態を、実施例に基づいて例示的に詳しく説明する。ただし、この実施例に記載されている構成部品の寸法、材質、形状、その相対配置などは、特に特定的な記載がない限りは、この発明の範囲をそれらのみに限定する趣旨のものではない。 EMBODIMENT OF THE INVENTION Below, with reference to drawings, the form for implementing this invention is illustratively described in detail based on an Example. However, the dimensions, materials, shapes, relative arrangements, etc. of the components described in this example are not intended to limit the scope of this invention to only those, unless otherwise specified. .

(実施例)
図1~図6を参照して、本発明の実施例に係る成膜装置について説明する。なお、これらの図においては、各部材の動作を分かり易くするために、一体的に動作する部材について同種のハッチングを付している。これらの図においては、各部材を断面的に示しているが、各部材については、紙面の手前側と奥側の異なった位置に配され得るため、ハッチングが付されているからと言って、必ずしも断面を示したものではない。
(Example)
A film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 6. In addition, in these figures, in order to make it easier to understand the operation of each member, members that operate integrally are given the same type of hatching. In these figures, each member is shown in cross section, but since each member can be placed at different positions on the front and back sides of the paper, the hatching does not mean that It does not necessarily show a cross section.

<成膜装置の構成>
特に、図1を参照して、成膜装置1の全体構成について説明する。図1は成膜装置全体の概略構成図である。成膜装置1は、チャンバ10と、チャンバ10内に備えられる成膜源20とを備えている。チャンバ10内は、真空雰囲気、又は、不活性ガス雰囲気に維持可能に構成される。成膜源20としては、成膜材料を蒸発又は昇華させる蒸発源の他、スパッタリングによって成膜を行うためのスパッタリングカソードなどを採用することができる。
<Configuration of film forming apparatus>
In particular, with reference to FIG. 1, the overall configuration of the film forming apparatus 1 will be described. FIG. 1 is a schematic diagram of the entire film forming apparatus. The film forming apparatus 1 includes a chamber 10 and a film forming source 20 provided within the chamber 10. The inside of the chamber 10 is configured to be maintainable in a vacuum atmosphere or an inert gas atmosphere. As the film-forming source 20, in addition to an evaporation source that evaporates or sublimates a film-forming material, a sputtering cathode for forming a film by sputtering, etc. can be used.

チャンバ10の上部には、成膜対象である基板Sと、基板Sに対して所望のパターンの薄膜を形成するために基板Sの成膜側に配されるマスクMとを位置合わせするための各種機構が備えられている。なお、本実施例では、成膜源20が配されたチャンバ10に、この各種機構が備えられる構成を示すが、基板SとマスクMとを位置合わせするためのチャンバと成膜源が備えられるチャンバとを別々に設ける構成を採用してもよい。この場合には、位置合わせ用のチャンバ内において、基板SとマスクMが位置合わせされた後に、成膜源を備えるチャンバに、これら基板SとマスクMが搬送されて成膜が施される。 In the upper part of the chamber 10, there is a device for aligning the substrate S to be film-formed and a mask M arranged on the film-forming side of the substrate S in order to form a thin film of a desired pattern on the substrate S. It is equipped with various mechanisms. Note that in this embodiment, a configuration is shown in which the chamber 10 in which the film-forming source 20 is arranged is equipped with these various mechanisms, but a chamber and a film-forming source for aligning the substrate S and the mask M are provided. A configuration in which a chamber is provided separately may also be adopted. In this case, after the substrate S and the mask M are aligned in the alignment chamber, the substrate S and the mask M are transported to a chamber equipped with a film formation source, and a film is formed thereon.

以下、基板SとマスクMとを位置合わせするための各種機構について説明する。チャンバ10の天井部には、各種機構を支持するためのベース部材11及び支持プレート12が固定されている。 Various mechanisms for aligning the substrate S and the mask M will be described below. A base member 11 and a support plate 12 for supporting various mechanisms are fixed to the ceiling of the chamber 10.

ベース部材11には、吸着部材としての静電チャック31を鉛直方向に昇降させる第1の昇降機構(吸着部材昇降部)30が取り付けられている。この第1の昇降機構30は、静電チャック31を保持する保持部材32と、保持部材32を昇降させるための軸部材33と、軸部材33を昇降させる駆動源34とを備えている。保持部材32は、鉛直方向に垂直な昇降プレート32aを備えている。昇降機構の具体的な構成については、ボールネジ機構など各種公知技術を採用し得るので、その詳細な説明は省略する。静電チャック31は、内部に電極31aを有しており、電極31aに電圧が印加されることで静電吸着力(静電気力による吸着力)を生ずるように構成されている。なお、静電吸着力を生じさせる方式としては、クーロン力タイプ、ジョンソン・ラーベック力タイプ、及びグラジエント力タイプなど、各種公知の方式を採用し得る。この静電チャック31によって、基板Sの成膜側の面とは反対側の面が吸着されて、基板Sは保持される。 A first elevating mechanism (adsorbing member elevating section) 30 that vertically raises and lowers an electrostatic chuck 31 serving as an adsorbing member is attached to the base member 11 . The first elevating mechanism 30 includes a holding member 32 that holds the electrostatic chuck 31, a shaft member 33 for raising and lowering the holding member 32, and a drive source 34 for raising and lowering the shaft member 33. The holding member 32 includes an elevating plate 32a that is perpendicular to the vertical direction. As for the specific structure of the elevating mechanism, various known techniques such as a ball screw mechanism can be employed, so a detailed explanation thereof will be omitted. The electrostatic chuck 31 has an electrode 31a inside, and is configured to generate electrostatic adsorption force (adsorption force due to electrostatic force) by applying a voltage to the electrode 31a. Note that various known methods such as a Coulomb force type, a Johnson-Rahbek force type, and a gradient force type can be employed as a method for generating electrostatic adsorption force. The electrostatic chuck 31 attracts the surface of the substrate S opposite to the surface on the film formation side, and holds the substrate S.

第1の昇降機構30における保持部材32の昇降プレート32aには、基板Sを鉛直方向に昇降させる第2の昇降機構(基板昇降部)40が設けられている。この第2の昇降機構40は、基板Sの成膜側の面の周縁を支持する基板支持部材41と、基板支持部材41を昇降させるための軸部材42と、軸部材42を昇降させる駆動源43とを備えている。昇降機構の具体的な構成については、ボールネジ機構など各種公知技術を採用し得るので、その詳細な説明は省略する。第2の昇降機構40を動作させない状態で、第1の昇降機構30により昇降プレート32aを昇降させると、静電チャック31と基板Sは一体的に昇降する。一方、第2の昇降機構40を動作させることで、静電チャック31に対して、基板Sを相対的に昇降させることができる。以上のように、基板支持部材41は、昇降プレート32aに対して昇降可能となるように第2の昇降機構40が設けられているのに対して、静電チャック31は、昇降プレート32aに対して固定されるように第1の昇降機構30が設けられている。 The elevating plate 32a of the holding member 32 in the first elevating mechanism 30 is provided with a second elevating mechanism (substrate elevating section) 40 for elevating the substrate S in the vertical direction. The second elevating mechanism 40 includes a substrate support member 41 that supports the periphery of the film-forming side surface of the substrate S, a shaft member 42 that raises and lowers the substrate support member 41, and a drive source that raises and lowers the shaft member 42. 43. As for the specific structure of the elevating mechanism, various known techniques such as a ball screw mechanism can be employed, so a detailed explanation thereof will be omitted. When the elevating plate 32a is raised and lowered by the first elevating mechanism 30 while the second elevating mechanism 40 is not operated, the electrostatic chuck 31 and the substrate S are moved up and down integrally. On the other hand, by operating the second lifting mechanism 40, the substrate S can be moved up and down relative to the electrostatic chuck 31. As described above, the substrate support member 41 is provided with the second elevating mechanism 40 so as to be movable relative to the elevating plate 32a, whereas the electrostatic chuck 31 is movable relative to the elevating plate 32a. A first elevating mechanism 30 is provided so as to be fixed.

また、成膜装置1は、マスクMの位置を調整するマスク調整機構50を備えている。このマスク調整機構50は、チャンバ10の天井部に固定された支柱部51と、支柱部51の下端に設けられたマスク台受け部52と、支柱部51に固定された磁気発生用コイルボックス53とを備えている。マスクMを支持するマスク支持部材としてのマスク台54の周縁には磁石55が設けられている。この磁石55が、マスク台受け部52と磁気発生用コイルボックス53との間の隙間に配されるようにマスク台54は配置される。そして、磁気発生用コイルボックス53による磁界が制御されることで、マスク台54は宙に浮いた状態で、水平方向の位置が調整される。すなわち、鉛直方向に対して垂直かつ互いに直交する方向をX,Y方向とし、鉛直方向を中心に回転する方向をθ方向とすると、磁気発生用コイルボックス53による磁界の制御を行うことで、マスク台54をX,Y,θ方向に位置調整することができる。 The film forming apparatus 1 also includes a mask adjustment mechanism 50 that adjusts the position of the mask M. This mask adjustment mechanism 50 includes a support 51 fixed to the ceiling of the chamber 10, a mask stand holder 52 provided at the lower end of the support 51, and a magnetism generating coil box 53 fixed to the support 51. It is equipped with A magnet 55 is provided at the periphery of a mask stand 54 serving as a mask support member that supports the mask M. The mask stand 54 is arranged so that the magnet 55 is arranged in the gap between the mask stand receiving part 52 and the magnetism generating coil box 53. Then, by controlling the magnetic field by the magnetism generating coil box 53, the horizontal position of the mask stand 54 is adjusted while it is floating in the air. That is, assuming that the directions perpendicular to the vertical direction and orthogonal to each other are the X and Y directions, and the direction of rotation around the vertical direction is the θ direction, by controlling the magnetic field by the magnetic field generating coil box 53, the mask The position of the stand 54 can be adjusted in the X, Y, and θ directions.

マスク調整機構50は、マスクMを昇降させる第3の昇降機構も有している。この第3の昇降機構は、チャンバ10の天井部に固定された支持プレート12に取り付けられており、マスクMを支持する支持部材56と、支持部材56を昇降させるための軸部材57と、軸部材57を昇降させる駆動源58とを備えている。昇降機構の具体的な構成については、ボールネジ機構など各種公知技術を採用し得るので、その詳細な説明は省略する。このマスク昇降機構は、チャンバ10内に搬送されたマスクMを受け取って、マスクMをマスク台54に載置するために用いられる。図1においては、マスク台54にマスクMが載置された状態を示している。 The mask adjustment mechanism 50 also has a third elevating mechanism that raises and lowers the mask M. This third elevating mechanism is attached to the support plate 12 fixed to the ceiling of the chamber 10, and includes a support member 56 for supporting the mask M, a shaft member 57 for elevating the support member 56, and a shaft member 57 for raising and lowering the support member 56. A driving source 58 for raising and lowering the member 57 is provided. As for the specific structure of the elevating mechanism, various known techniques such as a ball screw mechanism can be employed, so a detailed explanation thereof will be omitted. This mask elevating mechanism is used to receive the mask M transported into the chamber 10 and place the mask M on the mask stand 54. In FIG. 1, a state in which a mask M is placed on a mask stand 54 is shown.

また、ベース部材11には、基板SとマスクMとの位置合わせを行った後に、基板Sと静電チャック31を介してマスクMを磁力によって吸着する磁気吸着部材61を鉛直方向に昇降させる第4の昇降機構60が取り付けられている。この第4の昇降機構60は、磁気吸着部材61を保持する保持部材62と、保持部材62を昇降させる駆動源63とを備えている。昇降機構の具体的な構成については、ボールネジ機構など各種公知技術を採用し得るので、その詳細な説明は省略する。 Further, after the substrate S and the mask M are aligned, a magnetic attraction member 61 that magnetically attracts the substrate S and the mask M via the electrostatic chuck 31 is mounted on the base member 11 to vertically raise and lower the substrate S and the mask M. 4 lifting and lowering mechanisms 60 are attached. The fourth elevating mechanism 60 includes a holding member 62 that holds the magnetic attraction member 61 and a drive source 63 that moves the holding member 62 up and down. As for the specific structure of the elevating mechanism, various known techniques such as a ball screw mechanism can be employed, so a detailed explanation thereof will be omitted.

また、成膜装置1は、成膜源20、及び上記の各種機構等の動作を制御するための制御装置70も備えている。各種装置を制御するための制御装置は公知技術であるので、詳細な説明は省略するが、制御装置70は、CPU等のプロセッサ、半導体メモリやハードディスクなどの記憶デバイス、入出力インタフェースを備えている。 The film forming apparatus 1 also includes a film forming source 20 and a control device 70 for controlling the operations of the various mechanisms described above. Since the control device for controlling various devices is a well-known technology, a detailed explanation will be omitted, but the control device 70 includes a processor such as a CPU, a storage device such as a semiconductor memory or a hard disk, and an input/output interface. .

<成膜装置の駆動方法及び成膜方法>
特に、図2~6を参照して、成膜装置1の駆動方法及び成膜方法について説明する。図2~6は、図1のうち、チャンバ10の天井部付近の各種機構が設けられた部分を示したものである。
<Driving method of film forming apparatus and film forming method>
In particular, with reference to FIGS. 2 to 6, a method for driving the film forming apparatus 1 and a method for forming a film will be described. 2 to 6 show a portion of FIG. 1 near the ceiling of the chamber 10 where various mechanisms are provided.

まず、チャンバ10内にマスクMが搬送されて、第3の昇降機構によって、マスク台54にマスクMが載置される。そして、基板Sがチャンバ10内に搬送され、第2の昇降機構40における基板支持部材41に基板Sが載置される。これにより、基板支持部材41によって、基板Sの成膜側の面の周縁が支持される(基板支持工程(図2参照))。このとき、基板Sは、自重によって、その中央が鉛直方向下向きに湾曲するように撓んだ状態となる。 First, the mask M is transported into the chamber 10 and placed on the mask stand 54 by the third elevating mechanism. Then, the substrate S is transported into the chamber 10 and placed on the substrate support member 41 in the second elevating mechanism 40 . As a result, the periphery of the film-forming side surface of the substrate S is supported by the substrate support member 41 (substrate support step (see FIG. 2)). At this time, the substrate S is bent so that its center is curved vertically downward due to its own weight.

次に、第2の昇降機構40によって、基板支持部材41に支持された基板Sが上昇し、基板Sの周縁は静電チャック31に接した状態となる(図3参照)。このように、静電チャック31よりも鉛直方向下方に位置する基板支持部材41に基板Sが支持された後に、静電チャック31と基板支持部材41に支持された基板Sが近づくように構成されている
。その後、第1の昇降機構30によって、静電チャック31と基板Sが一体的に下降して、基板SがマスクMに近づいた状態となる(図4参照)。そして、基板SとマスクMとの位置合わせを行うためのアライメント動作が行われる。
Next, the substrate S supported by the substrate support member 41 is raised by the second elevating mechanism 40, and the peripheral edge of the substrate S is brought into contact with the electrostatic chuck 31 (see FIG. 3). In this way, after the substrate S is supported by the substrate support member 41 located vertically below the electrostatic chuck 31, the electrostatic chuck 31 and the substrate S supported by the substrate support member 41 are configured to approach each other. ing. Thereafter, the electrostatic chuck 31 and the substrate S are lowered together by the first elevating mechanism 30, so that the substrate S approaches the mask M (see FIG. 4). Then, an alignment operation is performed to align the substrate S and the mask M.

基板SとマスクMを位置合わせするアライメント動作に関しては、各種公知の方法を採用し得るが、ここでは代表的な一例を説明する。一般的に、アライメントを行うために、基板SとマスクMにはそれぞれアライメント用のマーク(不図示)が設けられる。そして、チャンバ10に固定されたカメラCによって、両者のマークが撮影されて、両者の位置ずれ量が判定される。そして、これらの位置ずれがなくなる(通常は、位置ずれ量が閾値内に収まる)ように、基板S及びマスクMのうちの少なくともいずれか一方の水平方向の位置が調整される。また、短時間で高精度なアライメントを実現するために、大まかに位置合わせを行うラフアライメントと、高精度に位置合わせを行うファインアライメントがなされるのが一般的である。ラフアライメントにおいては、低解像だが広視野のカメラCが用いられ、ファインアライメントにおいては、狭視野だが高解像のカメラCが用いられる。また、上記のアライメント用のマークも、通常、ラフアライメント用とファインアライメント用に別々のマークが用いられる。 Regarding the alignment operation for aligning the substrate S and the mask M, various known methods can be employed, but a typical example will be described here. Generally, in order to perform alignment, alignment marks (not shown) are provided on the substrate S and the mask M, respectively. Then, both marks are photographed by a camera C fixed to the chamber 10, and the amount of positional deviation between the two is determined. Then, the horizontal position of at least one of the substrate S and the mask M is adjusted so that these positional deviations are eliminated (usually, the amount of positional deviation falls within a threshold value). In addition, in order to achieve highly accurate alignment in a short time, it is common to perform rough alignment, which roughly aligns, and fine alignment, which aligns highly accurately. In rough alignment, a camera C with a low resolution but a wide field of view is used, and in fine alignment, a camera C with a narrow field of view but with a high resolution is used. Furthermore, as for the alignment marks mentioned above, separate marks are usually used for rough alignment and fine alignment.

具体的には、図4に示すように、基板SとマスクMが僅かに離れた状態で、カメラCから得られた撮影情報によって、制御装置70は基板SとマスクMの位置ずれ量を判定し、ラフアライメントを行う。すなわち、位置ずれ量に基づいて、本実施例の場合には、マスク調整機構50により、マスク台54の水平方向(X,Y,θ方向)の調整がなされることで、基板SとマスクMのラフアライメントが行われる。 Specifically, as shown in FIG. 4, when the substrate S and the mask M are slightly apart, the control device 70 determines the amount of positional deviation between the substrate S and the mask M based on the photographic information obtained from the camera C. and perform rough alignment. That is, based on the amount of positional deviation, in the case of this embodiment, the mask adjustment mechanism 50 adjusts the mask stand 54 in the horizontal direction (X, Y, θ directions), so that the substrate S and the mask M Rough alignment is performed.

ラフアライメントが行われた後に、同様の順序でファインアライメントが行われる。一般的には、基板SとマスクMとの位置ずれ量が閾値の範囲内になるまでファインアライメントが繰り返される。 After rough alignment is performed, fine alignment is performed in the same order. Generally, fine alignment is repeated until the amount of positional deviation between the substrate S and the mask M falls within a threshold value.

以上のアライメントが終了した後に、第1の昇降機構30によって、静電チャック31と基板Sが一体的に下降して、基板Sの成膜側の面がマスクMに接触した状態となる。これにより、基板Sの撓みがなくなった状態となる(接触工程(図5参照))。この状態で、静電チャック31に設けられた電極31aに電圧が印加されることで、基板Sは静電吸着力によって、静電チャック31に吸着される。つまり、静電チャック31が基板Sの成膜側の面とは反対側の面を吸着する(吸着工程)。以上のように、基板支持部材41は、少なくとも静電チャック31に基板Sが吸着される前の時点において、基板周縁を支持する。また、マスク支持部材としてのマスク台54に支持されたマスクMに対して、基板支持部材41に支持された基板Sを接触させた状態で、静電チャック31による基板Sを吸着する吸着力が生ずる。 After the above alignment is completed, the electrostatic chuck 31 and the substrate S are lowered together by the first elevating mechanism 30, so that the surface of the substrate S on the film formation side is in contact with the mask M. This brings the substrate S into a state where it is no longer bent (contact step (see FIG. 5)). In this state, by applying a voltage to the electrode 31a provided on the electrostatic chuck 31, the substrate S is attracted to the electrostatic chuck 31 by electrostatic attraction force. That is, the electrostatic chuck 31 attracts the surface of the substrate S on the opposite side to the surface on the film formation side (adsorption step). As described above, the substrate support member 41 supports the peripheral edge of the substrate at least before the substrate S is attracted to the electrostatic chuck 31. Further, when the substrate S supported by the substrate support member 41 is in contact with the mask M supported by the mask stand 54 serving as a mask support member, the adsorption force of the electrostatic chuck 31 to attract the substrate S is increased. arise.

基板Sが静電チャック31に吸着された後に、第4の昇降機構60によって磁気吸着部材61が下降する。これにより、マスクMが基板S及び静電チャック31を介して磁気吸着部材61に吸着される。これにより、基板SとマスクMとが接した状態で固定された状態となる(図6参照)。その後、成膜源20によって、基板Sの表面(成膜面)上に、マスクMに形成された所望のパターン(開口部)の薄膜が形成される(成膜工程)。 After the substrate S is attracted to the electrostatic chuck 31, the magnetic attraction member 61 is lowered by the fourth elevating mechanism 60. Thereby, the mask M is attracted to the magnetic attraction member 61 via the substrate S and the electrostatic chuck 31. As a result, the substrate S and the mask M are fixed in contact with each other (see FIG. 6). Thereafter, a thin film having a desired pattern (openings) formed in the mask M is formed on the surface (film forming surface) of the substrate S by the film forming source 20 (film forming process).

以上の駆動方法においては、第1の昇降機構30によって、静電チャック31と基板Sを一体的に下降させ、基板SとマスクMが近づいた状態でアライメントを行わせた後に、基板SとマスクMを接触させて、静電チャック31に基板Sを吸着させる場合を示した。しかしながら、第1の昇降機構30によって、静電チャック31と基板Sを一体的に下降させ、基板SをマスクMに接触させた状態で静電チャック31に基板Sを吸着させて、基板SとマスクMの位置関係を測定した後にアライメントを行ってもよい。この場合、アラ
イメントにおいて、基板SとマスクMとの相対位置を変更する際には、基板SをマスクMから離間させた状態で行うのが望ましい。
In the above driving method, the electrostatic chuck 31 and the substrate S are lowered together by the first elevating mechanism 30, alignment is performed with the substrate S and the mask M approaching each other, and then the substrate S and the mask M are aligned. A case is shown in which the substrate S is attracted to the electrostatic chuck 31 by bringing the substrate S into contact with the electrostatic chuck 31. However, the electrostatic chuck 31 and the substrate S are lowered together by the first elevating mechanism 30, and the substrate S is attracted to the electrostatic chuck 31 while the substrate S is in contact with the mask M. Alignment may be performed after measuring the positional relationship of the mask M. In this case, when changing the relative position between the substrate S and the mask M during alignment, it is desirable to perform the alignment with the substrate S separated from the mask M.

<電子デバイスの製造方法>
次に、本実施例の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機EL表示装置の構成を示し、有機EL表示装置の製造方法を例示する。
<Method for manufacturing electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, the configuration of an organic EL display device will be shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

まず、製造する有機EL表示装置について説明する。図9(a)は有機EL表示装置150の全体図、図9(b)は1画素の断面構造を表している。 First, the organic EL display device to be manufactured will be explained. FIG. 9(a) shows an overall view of the organic EL display device 150, and FIG. 9(b) shows a cross-sectional structure of one pixel.

図9(a)に示すように、有機EL表示装置150の表示領域151には、発光素子を複数備える画素152がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域151において所望の色の表示を可能とする最小単位を指している。本実施例に係る有機EL表示装置の場合、互いに異なる発光を示す第1発光素子152R、第2発光素子152G、第3発光素子152Bの組み合わせにより画素152が構成されている。画素152は、赤色発光素子と緑色発光素子と青色発光素子の組み合わせで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも1色以上であれば特に制限されるものではない。 As shown in FIG. 9A, in the display area 151 of the organic EL display device 150, a plurality of pixels 152 each including a plurality of light emitting elements are arranged in a matrix. Although details will be explained later, each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel herein refers to the smallest unit that can display a desired color in the display area 151. In the case of the organic EL display device according to this embodiment, a pixel 152 is configured by a combination of a first light emitting element 152R, a second light emitting element 152G, and a third light emitting element 152B that emit light different from each other. The pixel 152 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but it may also be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. There are no restrictions.

図9(b)は、図9(a)のA-B線における部分断面模式図である。画素152は、複数の発光素子からなり、各発光素子は、基板153上に、第1電極(陽極)154と、正孔輸送層155と、発光層156R、156G、156Bのいずれかと、電子輸送層157と、第2電極(陰極)158と、を有している。これらのうち、正孔輸送層155、発光層156R、156G、156B、電子輸送層157が有機層に当たる。また、本実施例では、発光層156Rは赤色を発する有機EL層、発光層156Gは緑色を発する有機EL層、発光層156Bは青色を発する有機EL層である。発光層156R、156G、156Bは、それぞれ赤色、緑色、青色を発する発光素子(有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極154は、発光素子毎に分離して形成されている。正孔輸送層155と電子輸送層157と第2電極158は、複数の発光素子152R、152G、152Bで共通に形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極154と第2電極158とが異物によってショートするのを防ぐために、第1電極154間に絶縁層159が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層140が設けられている。 FIG. 9(b) is a schematic partial cross-sectional view taken along line AB in FIG. 9(a). The pixel 152 is composed of a plurality of light emitting elements, and each light emitting element is provided with a first electrode (anode) 154, a hole transport layer 155, one of the light emitting layers 156R, 156G, and 156B, and an electron transport layer on a substrate 153. It has a layer 157 and a second electrode (cathode) 158. Among these, the hole transport layer 155, the light emitting layers 156R, 156G, and 156B, and the electron transport layer 157 correspond to organic layers. Further, in this embodiment, the light-emitting layer 156R is an organic EL layer that emits red, the light-emitting layer 156G is an organic EL layer that emits green, and the light-emitting layer 156B is an organic EL layer that emits blue. The light-emitting layers 156R, 156G, and 156B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue, respectively. Further, the first electrode 154 is formed separately for each light emitting element. The hole transport layer 155, the electron transport layer 157, and the second electrode 158 may be formed in common for the plurality of light emitting elements 152R, 152G, and 152B, or may be formed for each light emitting element. Note that an insulating layer 159 is provided between the first electrodes 154 in order to prevent the first electrodes 154 and the second electrodes 158 from shorting due to foreign matter. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 140 is provided to protect the organic EL element from moisture and oxygen.

図9(b)では正孔輸送層155や電子輸送層157は一つの層で示されているが、有機EL表示素子の構造によっては、正孔ブロック層や電子ブロック層を備える複数の層で形成されてもよい。また、第1電極154と正孔輸送層155との間には第1電極154から正孔輸送層155への正孔の注入が円滑に行われるようにすることのできるエネルギーバンド構造を有する正孔注入層を形成することもできる。同様に、第2電極158と電子輸送層157の間にも電子注入層が形成することもできる。 In FIG. 9B, the hole transport layer 155 and the electron transport layer 157 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers including a hole blocking layer and an electron blocking layer. may be formed. Further, between the first electrode 154 and the hole transport layer 155, a positive hole having an energy band structure that allows holes to be smoothly injected from the first electrode 154 to the hole transport layer 155 is provided. A hole injection layer can also be formed. Similarly, an electron injection layer may also be formed between the second electrode 158 and the electron transport layer 157.

次に、有機EL表示装置の製造方法の例について具体的に説明する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.

まず、有機EL表示装置を駆動するための回路(不図示)及び第1電極154が形成された基板153を準備する。 First, a substrate 153 on which a circuit (not shown) for driving an organic EL display device and a first electrode 154 are formed is prepared.

第1電極154が形成された基板153の上にアクリル樹脂をスピンコートで形成し、
アクリル樹脂をリソグラフィ法により、第1電極154が形成された部分に開口が形成されるようにパターニングし絶縁層159を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。
An acrylic resin is formed by spin coating on the substrate 153 on which the first electrode 154 is formed,
An insulating layer 159 is formed by patterning the acrylic resin by lithography so that an opening is formed in the portion where the first electrode 154 is formed. This opening corresponds to the light emitting region where the light emitting element actually emits light.

絶縁層159がパターニングされた基板153を第1の有機材料成膜装置に搬入し、基板支持台及び静電チャックにて基板を保持し、正孔輸送層155を、表示領域の第1電極154の上に共通する層として成膜する。正孔輸送層155は真空蒸着により成膜される。実際には正孔輸送層155は表示領域151よりも大きなサイズに形成されるため、高精細なマスクは不要である。 The substrate 153 on which the insulating layer 159 has been patterned is carried into a first organic material film forming apparatus, the substrate is held by a substrate support stand and an electrostatic chuck, and the hole transport layer 155 is transferred to the first electrode 154 in the display area. Deposit as a common layer on top of. The hole transport layer 155 is formed by vacuum deposition. In reality, the hole transport layer 155 is formed to have a larger size than the display area 151, so a high-definition mask is not required.

次に、正孔輸送層155までが形成された基板153を第2の有機材料成膜装置に搬入し、基板支持台及び静電チャックで保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板153の赤色を発する素子を配置する部分に、赤色を発する発光層156Rを成膜する。 Next, the substrate 153 on which up to the hole transport layer 155 has been formed is carried into a second organic material film forming apparatus and held by a substrate support stand and an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a light-emitting layer 156R that emits red light is formed on a portion of the substrate 153 where an element that emits red light is to be arranged.

発光層156Rの成膜と同様に、第3の有機材料成膜装置により緑色を発する発光層156Gを成膜し、さらに第4の有機材料成膜装置により青色を発する発光層156Bを成膜する。発光層156R、156G、156Bの成膜が完了した後、第5の成膜装置により表示領域151の全体に電子輸送層157を成膜する。電子輸送層157は、3色の発光層156R、156G、156Bに共通の層として形成される。 Similarly to the formation of the light-emitting layer 156R, a light-emitting layer 156G that emits green light is formed by the third organic material film-forming device, and a light-emitting layer 156B that emits blue light is further formed by the fourth organic material film-forming device. . After the film formation of the light emitting layers 156R, 156G, and 156B is completed, the electron transport layer 157 is formed over the entire display area 151 using a fifth film forming apparatus. The electron transport layer 157 is formed as a layer common to the three color light emitting layers 156R, 156G, and 156B.

電子輸送層157まで形成された基板を金属性蒸着材料成膜装置で移動させて第2電極158を成膜する。 A second electrode 158 is formed by moving the substrate formed up to the electron transport layer 157 using a metal vapor deposition material film forming apparatus.

その後プラズマCVD装置に移動して保護層140を成膜して、有機EL表示装置150が完成する。 Thereafter, the film is moved to a plasma CVD apparatus and a protective layer 140 is formed, thereby completing the organic EL display device 150.

絶縁層159がパターニングされた基板153を成膜装置に搬入してから保護層140の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本実施例において、成膜装置間の基板の搬入搬出は、真空雰囲気又は不活性ガス雰囲気の下で行われる。 If the substrate 153 on which the insulating layer 159 has been patterned is exposed to an atmosphere containing moisture or oxygen from the time the substrate 153 on which the insulating layer 159 has been patterned is carried into the film forming apparatus until the film forming of the protective layer 140 is completed, the light emitting layer made of the organic EL material may There is a risk of deterioration due to moisture and oxygen. Therefore, in this embodiment, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

<本実施例に係る成膜装置の優れた点>
本実施例に係る成膜装置1によれば、マスクMに基板Sを接触させることで、静電チャック31に基板Sが吸着される前の状態で、基板Sの撓みを抑制することができる。これにより、静電チャック31に対して、基板Sを安定した状態で吸着させることができる。すなわち、基板Sが、波打ったり一部が変形したりした状態で静電チャック31に吸着してしまうことを抑制することができる。
<Excellent points of the film forming apparatus according to this example>
According to the film forming apparatus 1 according to the present embodiment, by bringing the substrate S into contact with the mask M, it is possible to suppress the deflection of the substrate S before the substrate S is attracted to the electrostatic chuck 31. . Thereby, the substrate S can be stably attracted to the electrostatic chuck 31. That is, it is possible to prevent the substrate S from being attracted to the electrostatic chuck 31 in a wavy or partially deformed state.

1:成膜装置 10:チャンバ 11:ベース部材 12:支持プレート 20:成膜源 30:第1の昇降機構 31:静電チャック 31a:電極 32:保持部材 32a:昇降プレート 33:軸部材 34:駆動源 40:第2の昇降機構 41:基板支持部材 42:軸部材 43:駆動源 50:マスク調整機構 51:支柱部 52:マスク台受け部 53:磁気発生用コイルボックス 54:マスク台 55:磁石 56:支持部材 57:軸部材 58:駆動源 60:第4の昇降機構 61:磁気吸着部材 62:保持部材 63:駆動源 70:制御装置 C:カメラ M:マスク S:基板 1: Film forming apparatus 10: Chamber 11: Base member 12: Support plate 20: Film forming source 30: First elevating mechanism 31: Electrostatic chuck 31a: Electrode 32: Holding member 32a: Elevating plate 33: Shaft member 34: Drive source 40: Second elevating mechanism 41: Substrate support member 42: Shaft member 43: Drive source 50: Mask adjustment mechanism 51: Support section 52: Mask stand receiving section 53: Magnetism generation coil box 54: Mask stand 55: Magnet 56: Support member 57: Shaft member 58: Drive source 60: Fourth lifting mechanism 61: Magnetic attraction member 62: Holding member 63: Drive source 70: Control device C: Camera M: Mask S: Substrate

Claims (11)

基板の成膜側の面とは反対側の面を吸着する吸着部材と、
少なくとも前記吸着部材に前記基板が吸着される前の時点において、前記基板周縁を支持する基板支持部材と、
前記基板の成膜側に配されるマスクを支持するマスク支持部材と、
を備え、
前記マスク支持部材に支持された前記マスクに対して、前記基板支持部材に支持された前記基板を接触させた状態で、前記吸着部材による前記基板を吸着する吸着力が生ずることを特徴とする成膜装置。
an adsorption member that adsorbs the surface of the substrate opposite to the film formation side;
a substrate support member that supports the peripheral edge of the substrate at least before the substrate is attracted to the attraction member;
a mask support member that supports a mask disposed on the film formation side of the substrate;
Equipped with
The structure is characterized in that when the substrate supported by the substrate support member is in contact with the mask supported by the mask support member, an adsorption force for adsorbing the substrate by the adsorption member is generated. Membrane device.
前記吸着部材は、内部に電極を有しており、前記電極に電圧が印加されることで静電気力による吸着力を生ずるように構成されていることを特徴とする請求項1に記載の成膜装置。 The film forming method according to claim 1, wherein the adsorption member has an electrode therein, and is configured to generate an adsorption force due to electrostatic force when a voltage is applied to the electrode. Device. 前記吸着部材よりも鉛直方向下方に位置する前記基板支持部材に前記基板が支持された後に、前記吸着部材と前記基板支持部材に支持された前記基板が近づくように構成されていることを特徴とする請求項1に記載の成膜装置。 After the substrate is supported by the substrate support member located vertically below the suction member, the suction member and the substrate supported by the substrate support member are configured to approach each other. The film forming apparatus according to claim 1. 前記吸着部材と前記基板が近づいた後に、前記吸着部材と前記基板が一体的に下降して、前記基板と前記マスクが接触することを特徴とする請求項3に記載の成膜装置。 4. The film forming apparatus according to claim 3, wherein after the suction member and the substrate approach each other, the suction member and the substrate are lowered together so that the substrate and the mask come into contact with each other. 前記吸着部材を昇降させる吸着部材昇降部と、
前記基板支持部材を昇降させる基板昇降部と、
を備え、
前記吸着部材昇降部と前記基板昇降部は、共通の昇降プレートに設けられることを特徴とする請求項1に記載の成膜装置。
an adsorption member elevating section that raises and lowers the adsorption member;
a substrate lifting section that lifts and lowers the substrate support member;
Equipped with
2. The film forming apparatus according to claim 1, wherein the adsorption member elevating section and the substrate elevating section are provided on a common elevating plate.
前記基板支持部材は、前記昇降プレートに対して昇降可能となるように前記基板昇降部が設けられていることを特徴とする請求項5に記載の成膜装置。 6. The film forming apparatus according to claim 5, wherein the substrate support member is provided with the substrate elevating section so as to be movable up and down with respect to the elevating plate. 前記吸着部材は、前記昇降プレートに対して固定されるように前記吸着部材昇降部が設けられていることを特徴とする請求項5に記載の成膜装置。 6. The film forming apparatus according to claim 5, wherein the suction member elevating section is provided so that the suction member is fixed to the elevating plate. 前記基板と前記マスクが接触する前に、前記基板と前記マスクの位置合わせがなされることを特徴とする請求項1に記載の成膜装置。 2. The film forming apparatus according to claim 1, wherein the substrate and the mask are aligned before the substrate and the mask come into contact with each other. 前記吸着部材により吸着された前記基板に対して、薄膜を形成する成膜源を備えることを特徴とする請求項1~8のいずれか一つに記載の成膜装置。 The film forming apparatus according to any one of claims 1 to 8, further comprising a film forming source that forms a thin film on the substrate adsorbed by the adsorbing member. 基板支持部材によって基板の周縁を支持する基板支持工程と、
前記基板支持部材に支持された前記基板の成膜側の面をマスクに接触させる接触工程と、
前記接触工程の後に、前記マスクに前記基板を接触させた状態で、吸着部材によって前記基板を吸着する吸着力を生じさせることで、前記吸着部材が前記基板の成膜側の面とは反対側の面を吸着する吸着工程と、を有する
ことを特徴とする成膜装置の駆動方法。
a substrate supporting step of supporting the periphery of the substrate with a substrate supporting member;
a contacting step of bringing a film-forming side surface of the substrate supported by the substrate support member into contact with a mask;
After the contact step, with the substrate in contact with the mask, an adsorption member generates an adsorption force that adsorbs the substrate, so that the adsorption member is attached to the surface of the substrate opposite to the film-forming side. A method for driving a film forming apparatus, comprising: an adsorption step of adsorbing a surface of the film.
請求項10に記載の駆動方法により前記吸着部材に吸着された前記基板に対して、前記マスクを介して成膜を行う成膜工程を有する
ことを特徴とする成膜方法。
A film forming method, comprising a film forming step of forming a film through the mask on the substrate that has been adsorbed by the adsorbing member by the driving method according to claim 10.
JP2022141850A 2022-09-07 2022-09-07 Film-forming equipment, driving method of film-forming equipment, and film-forming method Pending JP2024037209A (en)

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