JP3879093B2 - Combinatorial device manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a combinatorial device manufacturing equipment where multiple kinds of thin films are, with no formed thin film exposed to the atmosphere, formed into a shape according to function, which are laminated to manufacture the device. SOLUTION: There are provided a CVD device 1 for forming a doped amorphous silicon film and a nitride silicon insulating film, a CVD device 3 for forming a non-doped amorphous silicon film, a pulse laser deposition device 5, holder aligning devices 6 and 7, transportation manipulators 8 and 9, a board holder, and a plurality of mask holders. The holder aligning devices 6 and 7 as well as the transportation manipulators 8 and 9 are used to align the board holder and the plurality of mask holders for combination. The combined holders are transported by the transportation manipulators 8 and 9, and various thin-films are mask-film-formed using various masks set at the mask holders for lamination, providing a device.

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an apparatus for manufacturing a combinatorial device capable of forming a film by laminating various types of thin films in the shape and structure according to their functions without exposing them to the atmosphere.
[0002]
[Prior art]
Examples of electronic devices formed by laminating a plurality of types of thin films include thin film transistors and amorphous solar cells. Each thin film constituting these electronic devices is made of a different material and has a different shape depending on the function responsible for the device operation. For this reason, the conventional manufacturing process of this type of device is to form each thin film with a dedicated film forming apparatus, take out the film from the film forming apparatus, pattern it by photolithography, and then perform the next process with the next film forming apparatus. The process of forming a thin film was repeated.
Such a process exposes the formed thin film surface to air before laminating the next thin film, so the surface of the thin film is modified, and the interface between the laminated thin films is different from the design. There was a problem that the characteristics were different from the design values. In particular, in thin film transistors and amorphous solar cells, the surface level at the film interface has an important influence on the characteristics, and thus large equipment such as a clean room has been conventionally required to avoid this problem.
[0003]
In the development stage of determining the film formation conditions and element structure of such devices, many types of samples with different film thicknesses and film compositions are prepared, and the characteristics of these samples are measured to determine the film formation conditions and the element. Although it is necessary to determine the structure, since the film forming apparatus used in the manufacturing process is a vacuum apparatus, it takes a long time for evacuation, and one type of film thickness condition or formation is achieved by one evacuation. Only film conditions can be implemented, and much time, labor and energy are required to determine the film formation conditions and element structure of the device.
[0004]
In view of the problems to be solved by the conventional method described above, the present invention produces a device by laminating various types of thin films into shapes corresponding to their functions without exposing the formed thin films to the atmosphere. An object of the present invention is to provide an apparatus that can perform the above-described process, that is, a combinatorial device manufacturing apparatus.
[0005]
[Means for Solving the Problems]
  In order to achieve the above object, a combinatorial device manufacturing apparatus of the present invention holds a plurality of film forming apparatuses connected to each other, a substrate holder or a mask holder, and uses the substrate holder or the mask holder for these film forming apparatuses. A plurality of transfer manipulators for transferring between each of the film forming apparatuses, a holder position adjusting device for holding the substrate holder or the mask holder, and adjusting the position of the substrate holder or the mask holder. When the film is formed by the film forming apparatus, the substrate holder holding the desired substrate and the mask holder holding the desired mask are aligned by moving the transfer manipulator and adjusting the position by the holder position adjusting apparatus. Combined with each other, and the film forming apparatus performs mask film formation on the substrate, whereby the surface of the thin film for each film formation. Without exposure to the atmosphereManyIt is characterized in that a device is manufactured by laminating various types of thin films in a shape corresponding to the function.
[0006]
  The plurality of film forming apparatuses are connected to each other through a gate valve.And / orPulsed laser depositionIn placeThere may be.
  The substrate holder is composed of a substrate holder ring and a heat sink to which the substrate is attached. The substrate holder ring has an alignment pin and an alignment fitting ring, and the mask holder is positioned It is equipped with a fitting hole that fits into the alignment pin and a fitting ring groove that fits into the fitting ring, and the pin and fitting ring of the substrate holder are fitted into the fitting hole and fitting ring groove of the mask holder, respectively. By combining, mask pattern alignment of a plurality of mask patterns can be performed.
  In addition, the mask holder has a plurality of fitting holes to be fitted to the alignment pins of the substrate holder, and these filming holes are sequentially shifted for each film formation to be fitted with the pins, thereby forming the divided film. be able to.
[0007]
  the abovePreferably, the heat sink is fixed to the substrate holder ring by point contact, and the amount of heat dissipated from the heat sink to the substrate holder ring is reduced so that the temperature distribution of the substrate becomes uniform.
  Also,The transfer manipulator includes a chuck for holding a substrate holder or a mask holder,Enough to transport the substrate holder or mask holder between multiple film deposition systemsThe length of the rodPrepared,The substrate holder and the mask holder are provided with a fitting groove into which the chuck is fitted.
[0008]
  Preferably, the holder position adjusting device includes a movable susceptor having a fitting groove for stably placing the substrate holder or the mask holder, and an adjustment rod for moving the movable susceptor up and down, moving left and right, and rotating in a horizontal plane. The adjustment rod moves up and down to adjust the relative position of the movable susceptor and the transfer manipulator to deliver the substrate holder or mask holder, and the substrate holder and mask holder are aligned by moving the adjustment rod left and right and rotating in the horizontal plane. I do.
  More preferably,The holder position adjusting device includes a movable susceptor having a fitting groove for stably placing a substrate holder or a mask holder, a fixed susceptor for placing the movable susceptor, and moving the movable susceptor up and down.Movement,An adjustment rod that moves left and right and rotates in a horizontal plane, a heater block provided at the lower end of the adjustment rod, and an after-movement mechanism that can further lower the adjustment rod while the movable susceptor is placed on the fixed susceptorPreparation,By moving the adjustment rod up and down,Movable susceptor and transfer manipulatorWithAdjust relative positiondo itSubstrate holder or mask holderDadelivery,The substrate holder and the mask holder are aligned by moving the adjustment rod left and right and rotating in a horizontal plane, andThe heater block is brought into close contact with the substrate holder placed on the fixed susceptor by the after-movement mechanism to heat the substrate holder.
[0009]
  The after-motion mechanism isPreferably,A guide rod fixed to the movable susceptor, a guide panel attached to the guide rod so as to be capable of guiding, and a guide stopper fixed to the upper end of the guide rod.PreparationThe guide panel is fixed to the adjustment rod.The movable susceptor is suspended and held when the adjustment rod is raised, and the adjustment rod can be further lowered from the state where the movable susceptor is mounted on the fixed susceptor..
  In addition, a movable susceptorIsPreferably, an opening is provided for exposing the substrate holder to the plasma of the plasma CVD apparatus or the vapor deposition atoms of the pulse laser deposition apparatus, and the fixed susceptor also serves as the anode electrode of the plasma CVD apparatus.
[0010]
According to the combinatorial device manufacturing apparatus of the present invention configured as described above, an electronic device is manufactured by laminating various types of thin films in a shape corresponding to the function without exposing the formed thin films to the atmosphere. can do
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view showing a configuration of a combinatorial device manufacturing apparatus according to the present invention. This apparatus is configured by connecting various film forming apparatuses to each other. In other words, the P • CVD apparatus 3 is connected to the P • CVD apparatus (plasma CVD apparatus) 1 via the gate valve 2, and the gate valve 4 is arranged in a direction perpendicular to the direction formed by the P • CVD apparatus 1 and the P • CVD apparatus 3. A PLD apparatus (pulse laser deposition apparatus) 5 is connected through the via. Further, each film forming apparatus includes holder position adjusting devices 6 and 7, respectively. The P • CVD apparatus 1 is connected to a transfer manipulator 8 for conveying the holder in the direction connecting the PLD apparatus 5 and the P • CVD apparatus 1, and the P • CVD apparatus 3 is connected to the P • CVD apparatus 1. A transport manipulator 9 for transporting the holder is connected in the direction connecting the P • CVD apparatus 3. The P • CVD apparatus 1 is provided with an insertion gate 10 for taking in and out the substrate holder and the mask holder.
In addition, although said P * CVD apparatus 1,3 and PLD apparatus 5 have a vacuum pump, a gas introduction hole, a vacuum gauge, or various valves, respectively, since these are the same as a normal vacuum apparatus, Illustration is omitted.
[0012]
FIG. 2 schematically shows a film forming method performed by each of the film forming apparatuses 1, 3, and 5 of this apparatus. In FIG. 2, the P • CVD apparatus 1 is SiH._Four(Silane), B₂H₆(Diborane), PH_Three(Phosphine) and NH_ThreeA doped amorphous silicon film and a silicon nitride film are formed by plasma CVD using a gas such as (ammonia).
P / CVD equipment 3 is SiH_FourAn amorphous silicon film is formed by plasma CVD using (silane).
The PLD device 5 forms a metal thin film by irradiating a target chip made of metal or the like as an electrode material with a laser beam.
[0013]
Next, the structure of the substrate holder and mask holder used in this apparatus will be described with reference to FIGS.
FIG. 3 shows the configuration of the substrate holder, and FIG. 3A shows a plan view and a side view of the heat sink 21 that is one of the elements constituting the substrate holder.
The heat sink 21 has a substrate fastener 22 for holding a substrate such as a glass substrate.
FIG. 3B shows a top view and a side view of the substrate holder ring 23.
The substrate holder ring 23 includes a cylinder 24, two upper and lower ring-shaped ridges 25 and 26 fixed in parallel to the cylinder cross section of the cylinder 24, and a lower ridge 26 perpendicular to the side wall of the cylinder 24. The positioning pin 27 is fixed in the direction. A ring portion below the flange 26 of the cylinder 24 is a fitting ring 28 for fitting with a mask holder described later.
[0014]
FIG. 3C is an assembly diagram of the substrate holder 29, and the heat sink 21 is formed by a screw 32 through a screw hole 30 provided in the heat sink 21 and a screw hole 31 provided in the cylinder 24 of the substrate holder ring 23. It is fixed to the holder ring 23 by point contact. This makes it difficult for the amount of heat supplied from a heater block, which will be described later, to escape to the substrate holder ring 23, making it easy to raise the temperature of the heat sink 21 and making the temperature distribution of the heat sink 21 uniform.
[0015]
FIG. 4 shows the configuration of the mask holder.
4A is a plan view of the mask holder 40, FIG. 4B is a cross-sectional view along A-A ′, and FIG. 4C is a cross-sectional view along B-B ′.
The mask holder 40 has two ring-shaped upper and lower flanges 42 and 43 parallel to the cylindrical section of the cylinder 41, and the upper flange 42 has an alignment hole 44 that fits the alignment pin 27. A fitting groove 45 for fitting with the fitting ring 28 is provided. Further, the mask holder 40 has a fixing base 46 for fixing the mask.
[0016]
FIG. 5 shows a state in which the mask 50 is attached to the mask holder 40, and the mask 50 is attached to the mask holder 40 by the screw 52 through the attachment hole 51 of the mask 50 and the screw hole 47 provided in the mask fixing base 46. Fixed.
[0017]
Next, an alignment mechanism between the substrate holder 29 and the mask holder 40 will be described.
FIG. 6 shows a state in which the substrate holder 29 and the mask holder 40 are aligned and combined. FIG. 6 (a) is a perspective view, FIG. 6 (b) is an AA ′ sectional view, and FIG. Is a BB ′ cross-sectional view.
As shown in FIG. 6, the alignment of the substrate holder 29 and the mask holder 40 is performed by fitting the fitting ring 28 and the alignment pin 27 of the substrate holder 29 into the fitting groove 45 and the alignment hole 44 of the mask holder 40, respectively. Let's do it together. Therefore, if the patterns of a plurality of masks used for device fabrication are formed with the same positional relationship with respect to the device to be fabricated with respect to the mask mounting holes 51 of the mask 50, a certain one of these masks is specified. The pattern of another mask can be accurately aligned with the thin film pattern on the substrate 61 formed by the mask.
[0018]
The film forming process in this apparatus includes a substrate holder 29 on which a substrate 61 is set via an insertion gate 10 and a mask holder on which a mask 50 that is first required among a series of masks necessary for device fabrication is set. And a plurality of mask holders 40 in which a series of other masks 50 other than the necessary mask are set are simultaneously stored in the apparatus at the same time. Next, in the film forming apparatus in which the combined substrate holder 29 and mask holder 40 are set, the first thin film is formed on the substrate 61, that is, the first thin film is formed as a mask. When the second thin film is mask-deposited on the first thin film, the substrate holder 29 is attached to the substrate holder 29 using a holder position adjusting device and a transfer manipulator, which will be described later, while maintaining a vacuum. The other mask holder 40 holding the mask is aligned and combined and transported to the next film forming apparatus to form the second thin film as a mask.
The above steps are sequentially repeated, and each thin film constituting the device is laminated while being formed into a shape corresponding to the function of each thin film, thereby producing a device.
[0019]
Next, the configuration of the holder position adjusting device will be described with reference to FIGS.
FIG. 7 is a cross-sectional view of P • CVD 1 or P • CVD 3 for explaining the configuration of the holder position adjusting device 6, and FIG. 8 is a perspective view showing the configuration of the holder position adjusting device 6.
The holder position adjusting device 6 moves the movable susceptor 71 up and down, left and right, or a vertical axis on the substrate holder 29, the mask holder 40 or the combined substrate holder 29 and the mask holder 40. It consists of an adjustment rod 72 for rotating around and a fixed susceptor 73 for mounting the movable susceptor 71.
The fixed susceptor 73 is a ring-shaped disk having an opening for exposing the substrate 61 to plasma during film formation and a ring-shaped groove 74 for stably mounting the movable susceptor 71, and mounting rods provided at four corners. 75 is fixed to the upper surface 76 of the vacuum chamber.
[0020]
The movable susceptor 71 has an opening for exposing the substrate 61 to plasma during film formation, and a ring-shaped groove 77 for stably mounting the substrate holder 29, the mask holder 40, or the combined substrate holder 29 and mask holder 40. It is a ring-shaped disk with a guide rod 78 provided at the four corners, and is connected to the guide disk 79 through a guide hole 80 so that it can be guided.
[0021]
The guide disk 79 is fixed to the adjustment rod 72.
A disc-shaped heater block 81 for heating the substrate via the heat sink 21 is fixed to the lower end of the adjustment rod 72.
A guide stopper 82 is fixed to the upper end of the guide rod 78. When the adjustment rod 72 is moved upward, the guide disk 79 is moored to these guide stoppers 82, and the movable susceptor 71 is suspended upward. I can move.
The adjustment rod 72 is coupled to the upper surface 76 of the vacuum chamber via, for example, an O-ring, and can move up and down, left and right and rotate around an axis while maintaining a vacuum.
According to the holder position adjusting device 6 having such a configuration, by moving the adjustment rod 72 upward, the movable susceptor 71 can be lifted while being suspended, and by moving the adjustment rod 72 downward. The movable susceptor 71 can be mounted on the fixed susceptor 73.
Further, by further moving the adjustment rod 72 downward, the adjustment rod 72 can be further lowered by being guided by the disk 79 and the guide rod 78 while the movable susceptor 71 is placed on the fixed susceptor 73, that is, the holder position. The adjusting device 6 includes an after-movement mechanism that allows the adjusting rod 72 to descend beyond the position where the movable susceptor 71 is placed on the fixed susceptor 73. By this after-motion mechanism, the heater block 81 can be brought into close contact with the upper surface of the substrate holder 29 of the substrate holder 29 and the mask holder 40 placed in combination with the movable susceptor 71 placed on the fixed susceptor 73, and the substrate holder 29 can be heated.
[0022]
The distance between the lower surface of the heater block 81 and the upper surface of the ring-shaped groove 74 of the movable susceptor 71 when the adjustment rod 72 is gradually moved downward and the movable susceptor 71 is placed on the fixed susceptor 73 is The thickness of the combined substrate holder 29 and the mask holder 40 is sufficiently larger than that of the combined substrate holder 29 and the mask holder 40 so that the combined substrate holder 29 and the mask holder 40 can be placed on the movable susceptor when replacing the mask holder described later.
[0023]
In FIG. 7, 84 is the cathode of the P • CVD apparatus 1 or 2, and the fixed susceptor 73 also serves as the anode of the P • CVD apparatus 1 or 2. Reference numeral 83 denotes an O-ring. Various gate valves, gas introduction holes and the like necessary for other plasma CVD apparatuses are the same as those in a general plasma CVD apparatus, and are not shown.
8 shows a state in which the upper end of the guide rod 78 protrudes from the guide disk 79 and the movable susceptor 71 floats in the air, but the configuration of the holder position adjusting device 6 is shown. For the purpose of illustration, it does not show the actual operation status.
Although the actual adjustment rod 72 up / down / left / right movement and rotation mechanism is not shown, a precision manipulator capable of rotating around the X, Y, Z and Z axes is connected to the adjustment rod 72. Use a precision manipulator.
[0024]
FIG. 9 is a cross-sectional view showing the configuration of the holder position adjusting device 7 of the PLD device 3.
In the present embodiment, the holder position adjusting device 7 of the PLD device 3 includes a movable susceptor 71, a rod 75 fixed to the movable susceptor 71, and the rod 75 fixed to the adjustment rod 72 via the arm 90. It is configured. Since the substrate heating device 91 of the PLD device 3 is composed of the heater lamp 92 and the reflecting mirror 93 having a parabolic shape for condensing the light of the heater lamp 92, the holder position adjusting device 7 is a holder position adjusting device. Compared to 6, the configuration is simpler.
In FIG. 9, reference numeral 94 denotes a target chip 94 that is rotatably supported and irradiates a laser beam.
Various gate valves, laser beam introduction windows, and the like necessary for other pulse laser deposition apparatuses are not shown because they are the same as those of a general pulse laser deposition apparatus.
[0025]
Next, the configuration of the transfer manipulators 8 and 9 will be described.
FIG. 10 shows the configuration of the tip portions of the transfer manipulators 8 and 9. The transfer manipulators 8 and 9 have a transfer rod 100, and a chuck 101 is provided at the tip of the transfer rod 100. The chuck 101 has a lower surface of the flange 25 of the substrate holder 29, an upper surface of the flange 26, A ring-shaped chuck groove 102 constituted by the outer wall portion of the substrate holder 29 sandwiched between the lower surface of 25 and the upper surface of the flange 26, or the lower surface of the flange 42 and the upper surface of the flange 43 of the mask holder 40; The substrate holder 29, the mask holder 40, or the combined substrate holder is fitted into a ring-shaped chuck groove 102 formed by the outer wall portion of the mask holder 40 sandwiched between the lower surface of 42 and the upper surface of the flange 43. 29 and the mask holder 40 are conveyed.
[0026]
FIG. 11 shows the overall configuration of the transport manipulators 8 and 9.
The transfer manipulators 8 and 9 are stored in a manipulator storage tank 110 that holds a vacuum. In the stored state, the chuck 101 of the transfer manipulators 8 and 9 is a storage area that is the storage tank 110 on the P / CVD apparatus 1 or 3 side. 111. The transfer manipulators 8 and 9 are moved by moving a moving magnet ring 113 magnetically coupled to a magnet 112 attached to the rod 100 along the outer wall of the storage tank 110.
[0027]
The length of the rod 100 of the transfer manipulator 8 is a length that allows the substrate holder 29 to be placed on the holder position adjusting device 7 of the PLD device 5 through the P • CVD apparatus 1.
The length of the rod 100 of the transfer manipulator 9 is a length that allows the substrate holder 29 to be placed on the holder position adjusting device 6 of the P • CVD apparatus 1 through the P • CVD apparatus 3.
In FIG. 11, from the state where the chuck 101 of the transfer manipulator 8 holds the substrate holder 29 and is stored in the storage area 111, the moving magnet ring 113 is operated to move the rod 100, and the substrate holder 29. Is conveyed to the holder position adjusting device 6 of the P • CVD apparatus 1. At this time, the movable susceptor 71 of the holder position adjusting device 6 of the P • CVD apparatus 3 moves upward by operating the adjusting rod 72 so as not to obstruct the passage of the transfer manipulator 8.
In FIG. 11, 114 is a ball bearing.
[0028]
Next, a mask replacement method using the holder position adjusting device 6 and the transfer manipulators 8 and 9 will be described with reference to FIGS.
FIG. 12 shows a method for placing the mask holder on the holder position adjusting device 6. 12A shows, for example, that the first film formation is completed in the P • CVD apparatus 1, and the combined substrate holder and mask holder are moved to another place, for example, the holder position of the P • CVD apparatus 3 by the transfer manipulator 9. It moves to the storage area 111 of the adjustment device 6 or the transfer manipulator 9 to empty the movable susceptor 71 of the holder position adjustment device 6 of the P • CVD apparatus 1, and the manipulator 8 moves the new mask holder 40 to the P · The state which has been conveyed to the holder position adjusting device 6 of the CVD apparatus 1 is shown. At this time, the holder position adjusting device 6 operates the adjusting rod 72 and moves to a position where the mask holder 40 attached to the chuck 101 does not contact the holder position adjusting device 6.
[0029]
FIG. 12B shows a state in which the adjustment rod 72 is moved upward and the ring-shaped groove 77 of the movable susceptor 71 and the collar 43 of the mask holder 40 attached to the chuck 101 are fitted. Since the ring-shaped groove 77 and the collar 43 of the mask holder 40 are fitted, the mask holder 40 can be placed on the movable susceptor 71 by moving the manipulator 8 rightward in the drawing.
FIG. 12C shows a state where the adjustment rod 72 is moved downward and the movable susceptor 71 on which the mask holder 40 is placed is placed on the fixed susceptor 73.
In order to take out the mask holder 40 from the movable susceptor 71, the above procedure is reversed.
[0030]
FIG. 13 shows a method for aligning the substrate holder 29 and the new mask holder 40.
In FIG. 13A, for example, the first film formation is completed in the P • CVD apparatus 1, for example, and a new mask holder 40 is placed on the movable susceptor 71 (the state of FIG. 12C) and retracted to another place. The state which conveyed the substrate holder 29 made to the holder position adjustment apparatus 6 with the conveyance manipulator 9 is shown. At this time, the adjustment rod 72 is moved upward to such an extent that the tip of the alignment pin 27 is lightly in contact with the upper surface of the collar 42 of the mask holder 40, and the adjustment rod 72 is rotated around the vertical axis or the adjustment rod 72. In addition, the alignment pin 27 is aligned with the alignment hole 44 provided in the collar 42 of the mask holder 40.
FIG. 13B shows a state in which the alignment of the substrate holder 29 and the mask holder 40 is completed, the adjustment rod 72 is raised, and the substrate holder 29 and the mask holder 40 are fitted.
In FIG. 13C, the adjustment rod 72 is lowered, the movable susceptor 71 is placed on the fixed susceptor 73, and the disk-shaped heater block 81 provided at the tip of the adjustment rod 72 is the upper surface of the substrate holder 29. The state which was made to stick to is shown. Thereby, the replacement of the mask holder 40 is completed, and the heater block 81 can effectively heat the substrate holder 29 to perform the next film formation.
In order to take out the substrate holder 29 or the mask holder 40 from the combined substrate holder 29 and mask holder 40 placed on the movable susceptor 71, the above procedure is reversed.
In order to transport the combined substrate holder 29 and mask holder 40 mounted on the movable susceptor 71 in a combined state, the adjustment rod 72 is lifted from the state shown in FIG. After adjusting the height of the chuck groove 102 of the holder 40 to the height of the chuck 101, the chuck 101 is fitted into the chuck groove 102, and the adjustment rod 72 is lowered in the fitted state to move the mask holder 40. It is removed from the groove 74 of the susceptor 71 and conveyed.
[0031]
Next, a split film forming method using the holder position adjusting devices 6 and 7 and the transfer manipulators 8 and 9 will be described.
When a specific thin film is formed, it may be desired to change the film thickness within the substrate. For example, the film formation conditions of other thin films are the same, and it is desired to change the film thickness of a specific thin film to know the change in characteristics.
In such a case, for example, the four-divided mask shown in FIG. 14 is attached to the mask holder 40 having four alignment holes 44 on the flange 42 at equal intervals as shown in FIG. A film is formed by combining the substrate holders 29. After the film formation, the mask holder 40 and the substrate holder 29 are arranged as shown in FIG. Align and combine with the fitting hole 44, and form a film again under different conditions. Thereafter, four types of specific thin films having different film formation conditions can be formed on the same substrate by sequentially repeating the above steps.
[0032]
As described above, if this device is used, a device can be produced by laminating various types of thin films in a shape corresponding to the function thereof, so that the formed thin film is not exposed to the atmosphere. For example, an electronic device such as a thin film transistor or a thin film solar cell can be formed without requiring a photolithography process. In addition, a plurality of devices having different film formation conditions can be manufactured by one evacuation.
[0033]
Next, examples of device fabrication using the combinatorial device device of the present invention will be described.
In this example, an amorphous silicon solar cell is manufactured.
This amorphous silicon solar cell has a glass / transparent conductive film / n-type amorphous Si layer / i layer (amorphous Si layer) / p-type amorphous Si layer / Al back electrode structure (FIG. 14B). .
[0034]
The production process of the amorphous silicon solar cell will be described below.
Introducing the substrate into the P / CVD apparatus 1:
The glass substrate 61 with ITO (Indium tin oxide) and ZnO (zinc oxide) is washed with acetone, ethanol, and pure water.
The substrate 61 is set on the substrate holder 29.
A mask is not attached to the mask holder 40 (referred to as mask holder A), and is used as it is as a substrate holder support jig.
A four-divided mask 140 is attached to the mask holder 40 (refer to FIG. 14A as mask holder B).
A mask for electrode formation is mounted on the mask holder 40 (referred to as mask holder C).
[0035]
The mask holder C is placed on the movable susceptor 71 of the PLD device 3 using the transfer manipulator 8.
The mask holder A and the substrate holder 29 are overlapped and introduced into the P • CVD apparatus l and held by the transfer manipulator 8.
The mask holder B is introduced into the P • CVD apparatus 1 and placed on the movable susceptor 71.
-P.CVD apparatus l is evacuated with a rotary pump and a complex molecular pump.
・ Exhaust for about 1 hour and the degree of vacuum of the P • CVD apparatus l is 10^-7When reaching the Torr platform, the gate valve 2 is opened, and the mask holder B is transferred to the P • CVD apparatus 3 by the transfer manipulator 9 and placed on the movable susceptor 71 of the P • CVD apparatus 3. Close the gate valve 2.
After the superposed mask holder A and substrate holder 29 are transferred from the transfer manipulator 9 to the movable susceptor 71 of the P • CVD apparatus l, the adjustment rod 72 is lowered and the heater block 81 of the adjustment rod 72 The mask holder 40 and the substrate holder 29 are sandwiched between the movable susceptor 71. In this way, the substrate holder 29 and the heater block 81 are brought into close contact with each other to establish thermal contact.
The temperature of the heater block 81 of the P • CVD apparatus 1 is set to 150 ° C., and baking in the substrate 61 and the vacuum chamber is started. This state is maintained for about 6 hours.
[0036]
Amorphous Sin layer deposition:
Set the temperature of the heater block 81 of the P • CVD apparatus l to 250 ° C. and wait for about 15 minutes until the temperature rises.
・ PH_ThreeThe flow rate is 5 sccm (cm^Three/ Min), SiH_FourThe flow rate is set to 10 sccm and introduced into the P • CVD apparatus 1. The opening / closing amount of the exhaust valve is adjusted (working exhaust) to set the chamber internal pressure to 100 mTorr (13.3 Pa).
・ 13.56MHz (industrial frequency defined by International Radio Law), 65mW / cm for cathode electrode²The plasma is generated by applying a high frequency of. After 70 seconds of deposition, the high frequency is turned off to stop the film formation.
[0037]
・ PH_ThreeAnd SiH_FourIs stopped and the exhaust valve is fully opened. 10 in P / CVD equipment^-7When the ultra high vacuum of the Torr level is reached, the gate valve 2 is opened, and the substrate holder 29 is moved from the P • CVD apparatus 1 to the P • CVD apparatus 2. At that time, only the substrate holder 29 is received by the transfer manipulator 9.
The substrate holder 29 is transported into the P • CVD apparatus 3 and stacked on the mask holder B. Thereafter, the heater block 81 is lowered so that the substrate holder 29 and the mask holder B are sandwiched between the heater block 81 and the movable susceptor 71.
・ Close gate valve 2.
Set the heater block 81 of the P • CVD apparatus 3 at 250 ° C.
[0038]
i-layer deposition (changes the thickness of the four layers):
・ SiH_FourThe flow rate is 10 sccm (cm^Three/ Min) and introduced into the P • CVD apparatus 3. The opening / closing amount of the exhaust valve is adjusted (working exhaust), and the chamber internal pressure is set to 100 mTorr (13.3 Pa).
・ 13.56MHz, 65mW / cm on the cathode electrode²The plasma is generated by applying a high frequency of.
・ After deposition for 30 minutes, turn off the high frequency to stop the film formation.
The substrate holder 29 is received by the transfer manipulator 9 and stored in the storage area 111.
[0039]
・ Rotate the adjustment rod 72 by 90 °. The transfer manipulator 9 is again carried into the P • CVD apparatus 3 and the substrate holder 29 is overlaid on the mask holder B.
The adjustment rod 72 is lowered so that the substrate holder 29 and the mask holder B are sandwiched between the heater block 81 and the movable susceptor 71.
The above steps are repeated to deposit i layers (amorphous Si layers) having different film thicknesses at different positions on the substrate 61 for 45 minutes, 60 minutes, and 75 minutes, respectively.
・ SiH_FourIs stopped and the exhaust valve is fully opened. 10 in the P / CVD apparatus 3^-7When the ultra high vacuum of the Torr level is reached, the gate valve 2 is opened, and only the substrate holder 29 is moved from the P • CVD apparatus 3 to the P • CVD apparatus 1 by the transfer manipulator 9.
The substrate holder 29 is transported into the P • CVD apparatus 1 and stacked on the mask holder A. Thereafter, the heater block 81 is lowered so that the substrate holder 29 and the mask holder A are sandwiched between the heater block 81 and the movable susceptor 71.
・ Close gate valve 2.
[0040]
p-layer deposition:
Set the heater block 81 of the P • CVD apparatus 1 at 250 ° C. and wait for about 15 minutes until the temperature rises.
・ B₂H₆The flow rate of 5 sccm (cm^Three/ Min), SiH_FourThe flow rate is set to 10 sccm and introduced into the P • CVD apparatus 1. The opening / closing amount of the exhaust valve is adjusted (working exhaust), and the chamber internal pressure is set to 100 mTorr (13.3 Pa).
・ 13.56MHz, 65mW / cm on the cathode electrode²The plasma is generated by applying a high frequency of.
・ After deposition for 70 seconds, turn off the high frequency to stop film formation.
[0041]
Cleaning with pure argon (Ar) in the reaction gas piping:
・ SiH_Four1kgf / cm of Ar for piping²Enclose, evacuate to high vacuum using the P • CVD apparatus 3, and enclose Ar again. Repeat three times. Thereafter, the mass flow controller is set to 20 sccm and Ar is allowed to flow for 15 minutes.
・ B₂H₆And PH_ThreeThe piping is cleaned in the same manner as described above using the P • CVD apparatus 1.
[0042]
Back electrode formation:
Using the transfer manipulator 8, the substrate holder 29 is aligned with the mask holder C of the PLD apparatus 5 and overlapped.
-Completed by pulsed laser deposition of the back electrode.
[0043]
Experimental result:
FIG. 15 shows voltage / current characteristics of a nip type solar cell manufactured by the combinatorial device manufacturing apparatus of the present invention. A clear dependence of solar cell characteristics on the i-layer thickness is seen. In particular, regarding the fill factor (fill factor), it has been found that in the case of the nip structure, a satisfactory fill factor of about 60% cannot be obtained unless the i layer is thinned to about 2500 mm.
[0044]
【The invention's effect】
As described above, with this apparatus, it is possible to produce a device by laminating various types of thin films into shapes corresponding to their functions without exposing the formed thin films to the atmosphere. For example, an electronic device such as a thin film transistor or a thin film solar cell can be formed without necessity. In addition, a plurality of devices having different film formation conditions can be manufactured by one evacuation.
[Brief description of the drawings]
FIG. 1 is a plan view showing a configuration of a combinatorial device manufacturing apparatus according to the present invention.
FIG. 2 is a diagram schematically showing a film forming method performed by each film forming apparatus of the combinatorial device manufacturing apparatus of the present invention.
FIG. 3 is a diagram showing a configuration of a substrate holder of the combinatorial device manufacturing apparatus according to the present invention.
FIG. 4 is a diagram showing a configuration of a mask holder of a combinatorial device manufacturing apparatus according to the present invention.
FIG. 5 is a view showing a structure for attaching a mask to a mask holder of the combinatorial device manufacturing apparatus of the present invention.
FIG. 6 is a view showing a coupling structure of a substrate holder and a mask holder of the combinatorial device manufacturing apparatus of the present invention.
FIG. 7 is a cross-sectional view showing a configuration of a holder position adjusting device of the combinatorial device manufacturing apparatus of the present invention.
FIG. 8 is a perspective view showing a configuration of a holder position adjusting device of the combinatorial device manufacturing apparatus of the present invention.
FIG. 9 is a cross-sectional view showing a configuration of a holder position adjusting device of a PLD device of the combinatorial device manufacturing device of the present invention.
FIG. 10 is a diagram showing a configuration of a tip portion of a transfer manipulator of the combinatorial device manufacturing apparatus according to the present invention.
FIG. 11 is a diagram showing an overall configuration of a transfer manipulator of a combinatorial device manufacturing apparatus according to the present invention.
FIG. 12 is a diagram showing a method of placing the mask holder of the combinatorial device manufacturing apparatus of the present invention on the holder position adjusting apparatus.
FIG. 13 is a view showing a method for aligning a substrate holder and a mask holder in the combinatorial device manufacturing apparatus of the present invention.
FIG. 14 is a diagram showing a four-divided mask used in this example and the structure of a thin-film solar cell manufactured using the mask.
FIG. 15 is a graph showing characteristics of a thin film solar cell manufactured in this example.
[Explanation of symbols]
1 Plasma CVD equipment
2 Gate valve
3 Plasma CVD equipment
4 Gate valve
5 PLD equipment
6 Holder position adjustment device
7 Holder position adjustment device
8 Transport manipulator
9 Transport manipulator
10 Insertion gate
21 heat sink
22 Board fasteners
23 Substrate holder ring
24 cylinder
25 鍔
26 鍔
27 Alignment pin
28 Mating ring
29 Substrate holder
30 Screw holes
31 Screw holes
32 screws
40 Mask holder
41 cylinder
42 鍔
43 鍔
44 Alignment hole
45 Fitting ring groove
46 Mask mount
47 Screw holes
50 mask
51 Mask mounting hole
52 screws
61 substrates
71 Movable susceptor
72 Adjustment rod
73 Fixed susceptor
74 Groove
75 Mounting rod
76 Top of vacuum chamber
77 Groove
78 Guide rod
79 Guide disk
80 guide hole
81 Heater block
82 Guide stopper
83 O-ring
84 Cathode
90 arms
91 Heater device
92 Heater lamp
93 Reflector
94 Target chip
100 rods
101 chuck
102 chuck groove
110 Containment tank
111 Storage area
112 magnet
113 Moving magnet ring
114 ball bearing
140 4 masks

Claims (9)

A plurality of film forming apparatuses connected to each other;
A transport manipulator that holds the substrate holder or the mask holder and transports the substrate holder or the mask holder between these film forming apparatuses;
A holder position adjusting device that is provided for each film forming apparatus, holds the substrate holder or the mask holder, and adjusts the position of the substrate holder or the mask holder;
During film formation by the plurality of film forming apparatuses, the substrate holder holding the desired substrate and the mask holder holding the desired mask are moved by moving the transfer manipulator and adjusting the position by the holder position adjusting apparatus. By aligning and combining, and performing the mask film formation on the substrate with each of the film formation apparatuses,
A combinatorial device manufacturing apparatus characterized in that a device is manufactured by laminating various types of thin films into shapes corresponding to their functions without exposing the surface of each thin film to the atmosphere. The combinatorial device manufacturing apparatus according to claim 1, wherein the plurality of film forming apparatuses are a plasma CVD apparatus and / or a pulse laser deposition apparatus connected to each other via a gate valve. The substrate holder is composed of a substrate holder ring and a heat sink to which the substrate is attached, and the substrate holder ring has an alignment pin and an alignment fitting ring,
The mask holder includes a fitting hole that fits into the positioning pin and a fitting ring groove that fits into the fitting ring,
The mask pattern alignment of a plurality of mask patterns is performed by fitting the pin of the substrate holder and the fitting ring into the fitting hole and the fitting ring groove of the mask holder, respectively. The combinatorial device manufacturing apparatus described in 1.   The mask holder has a plurality of the fitting holes to be fitted to the positioning pins of the substrate holder, and these fitting holes are sequentially shifted for each film formation to be fitted with the pins, thereby being divided. The combinatorial device manufacturing apparatus according to claim 3, wherein a film is formed.   The heat sink is fixed in point contact with the substrate holder / ring, and the amount of heat dissipated from the heat sink to the substrate holder / ring is reduced to make the temperature distribution of the substrate uniform. Item 4. The combinatorial device manufacturing apparatus according to Item 3. The holder position adjusting device includes a movable susceptor having a fitting groove for stably placing the substrate holder or the mask holder, and an adjustment rod for moving the movable susceptor up and down, moving left and right, and rotating in a horizontal plane. Prepared,
By the vertical movement of the adjustment rod, the relative position between the movable susceptor and the transfer manipulator is adjusted, and the substrate holder or the mask holder is transferred. The combinatorial device manufacturing apparatus according to claim 1, wherein the mask holder is aligned. The holder position adjusting device includes a movable susceptor having a fitting groove for stably placing the substrate holder or the mask holder, a fixed susceptor for placing the movable susceptor, and moving the movable susceptor up and down. An adjustment rod that moves left and right and rotates in a horizontal plane; a heater block provided at the lower end of the adjustment rod; And adjusting the relative position between the movable susceptor and the transfer manipulator by moving the adjustment rod up and down to deliver the substrate holder or the mask holder, and moving the adjustment rod to the left and right and rotating it in a horizontal plane. Align the holder with the mask holder,
2. The combinatorial device manufacturing apparatus according to claim 1, wherein the heater block is brought into close contact with the substrate holder placed on the fixed susceptor and the substrate holder is heated by the after-movement mechanism.   The after-movement mechanism includes a guide rod fixed to the movable susceptor, a guide panel attached to the guide rod so as to be capable of guiding, and a guide stopper fixedly provided at an upper end of the guide rod, and the guide panel is connected to the adjustment rod. The movable susceptor is suspended and held when the adjustment rod is raised, and the adjustment rod can be further lowered from the state where the movable susceptor is placed on the fixed susceptor. The combinatorial device manufacturing apparatus according to claim 7, which is capable of being performed.   The movable susceptor includes an opening for exposing the substrate holder to plasma of a plasma CVD apparatus or vapor deposition atoms of a pulse laser deposition apparatus, and the fixed susceptor also serves as an anode electrode of the plasma CVD apparatus. The combinatorial device manufacturing apparatus according to claim 7.

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