CN105568224B - Vapor deposition radical occlusion device and evaporated device - Google Patents
Vapor deposition radical occlusion device and evaporated device Download PDFInfo
- Publication number
- CN105568224B CN105568224B CN201610059917.8A CN201610059917A CN105568224B CN 105568224 B CN105568224 B CN 105568224B CN 201610059917 A CN201610059917 A CN 201610059917A CN 105568224 B CN105568224 B CN 105568224B
- Authority
- CN
- China
- Prior art keywords
- substrate
- vapor deposition
- radical occlusion
- occlusion device
- barrier structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 230000000903 blocking effect Effects 0.000 claims abstract description 12
- 239000004744 fabric Substances 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of vapor deposition radical occlusion device, pollution of the material to evaporated device when for preventing vapor deposition, including:One blocks substrate;Barrier structure for the irregularity degree for increasing the surface for blocking substrate, the barrier structure are set to described block on substrate.The beneficial effects of the invention are as follows:The service life for increasing radical occlusion device, prevents the pollution of vacuum cavity.
Description
Technical field
The present invention relates to technical field of liquid crystal production more particularly to a kind of vapor deposition radical occlusion devices and vapor deposition to set
It is standby.
Background technology
The production method that OLED products are current relatively mainstreams is made using evaporation coating method.Vapor deposition is generally adopted by vacuum
Chamber adds evaporation source, the disperse in vacuum chamber by material, realizes film forming.Using this production method, in the process of film forming
Middle material can be also deposited in the cavity wall of vacuum chamber, cause the pollution to cavity wall, product yield is caused to decline.Mainstream at present
Solution is the increase material blocks device in vacuum cavity.The radical occlusion device of present mainstream is exactly the cated plank of apparatus
It is blocked, since plank face is limited material that is flat, can lockking, so often replace.
Invention content
In order to solve the above technical problem, the present invention provides a kind of vapor deposition radical occlusion device and evaporated devices, increase
The usage time of radical occlusion device reduces pollution of the evaporated material to cavity.
In order to achieve the above object, the technical solution adopted by the present invention is:A kind of vapor deposition radical occlusion device, steams for preventing
Pollution of the material to evaporated device when plating, including:
One blocks substrate;
Barrier structure for the irregularity degree for increasing the surface for blocking substrate, the barrier structure is set to described
It blocks on substrate.
Further, concaveconvex structure is arranged to form the barrier structure in the surface for blocking substrate.
Further, the barrier structure is that multiple hollow cylinder structures connect the fenestral fabric to be formed.
Further, the cross sectional shape of the hollow cylinder structure is round, quadrangle or hexagon.
Further, the fenestral fabric is removably connected to described block on substrate.
Further, the fenestral fabric magnetic absorption is blocked in described on substrate.
Further, the substrate that blocks uses iron work, the fenestral fabric to use magnetic material or magnetisable material
Material makes.
Further, the fenestral fabric includes multiple subnet grating textures.
Further, described to block substrate and be deposited out for connecting being provided on one side for the barrier structure for adsorbing
The absorbent coating of material.
The embodiment of the present invention also provides a kind of evaporated device, including evaporation source, vacuum cavity and is set to the vacuum
Above-mentioned vapor deposition radical occlusion device in cavity.
The beneficial effects of the invention are as follows:The service life for increasing radical occlusion device, prevents the pollution of vacuum cavity.
Description of the drawings
Fig. 1 shows radical occlusion device structural schematic diagrams of the present invention;
Fig. 2 indicates radical occlusion device partial structural diagram of the present invention.
Specific implementation mode
The feature and principle of the present invention are described in detail below in conjunction with attached drawing, illustrated embodiment is only used for explaining this hair
It is bright, protection scope of the present invention is not limited with this.
As shown in Figure 1, the present embodiment provides a kind of vapor deposition radical occlusion device, material is to evaporated device when for preventing vapor deposition
Pollution, including:
One blocks substrate 1;
Barrier structure 2 for the irregularity degree for increasing the surface for blocking substrate 1, the barrier structure 2 are set to
It is described to block on substrate 1.
The setting of the barrier structure 2 increases the flatness on the surface for blocking substrate 1, the barrier structure 2 with
The substrate 1 that blocks is used in combination, and increases the adhesive force of the material of evaporation source volatilization, and increase radical occlusion device uses the longevity
Life, compared with the existing technology in the radical occlusion device of plank is only set, the radical occlusion device in the present embodiment need not be replaced frequently, save
Human-saving material resources, and the material of the significantly more efficient carrying evaporation source volatilization of radical occlusion device, it is therefore prevented that the pollution of vacuum cavity.
In the present embodiment, the barrier structure 2 can be integral structure, the barrier structure 2 with the substrate 1 that blocks
Concrete form can there are many, as long as realize increase described in block substrate 1 irregularity degree, with it is described block substrate 1 cooperation
The material that evaporation source volatilization can effectively be carried, in one embodiment of the invention, the surface setting for blocking substrate 1 is recessed
To form the barrier structure 2, which can be integrally formed male structure with the substrate 1 that blocks.
The concaveconvex structure can be rule, the structure of consistency, can also be irregular structure.
There is certain depth in order to which barrier structure 2 described in more material can be carried, it is described to block in the present embodiment
Structure 2 is that multiple hollow cylinder structures connect the fenestral fabric to be formed.The material of evaporation source volatilization is effectively fixed on grid
In shape structure and be not easy to fall, the depth of the hollow cylinder structure should not the too conference of too deep, depth influence evaporation source volatilization
The entrance of material, it is preferred that the depth of the hollow cylinder structure in the present embodiment is:1mm-3mm.
Situation is as shown in Figure 2 after evaporation material deposits on fenestral fabric, and what Fig. 2 was indicated is a hollow cylinder knot
The schematic diagram of structure, falls blocking that the material on 1 is less, fall it is more in the material for blocking substrate 1 and column structure intersection, due to
The presence of fenestral fabric, material have been well fixed in radical occlusion device, are not susceptible to fall, further, since hollow posts
There are certain depth for body structure, therefore, it is possible to accommodate more evaporation materials.
The shape in the section of the hollow cylinder can be geometry or irregular non-geometrically, the present embodiment
In, the cross sectional shape of the hollow cylinder structure is round, quadrangle or hexagon.
Preferably, the fenestral fabric blocks 1 split type setting of substrate with described, i.e., the described fenestral fabric is detachable
Be connected to it is described block on substrate 1, be convenient for clean and maintenance.
The fenestral fabric and the connection type for blocking substrate 1 can there are many, as long as blocking knot described in realizing
Structure 2 blocks the two-part split type setting of substrate 1 with described, in the present embodiment, the fenestral fabric magnetic absorption in
It is described to block on substrate 1.The connection type of magnetic absorption makes the barrier structure 2 and the substrate 1 that blocks effectively carry out
Connection, eliminates barrier structure 2 and blocks the gap between substrate 1.
Preferably, the substrate 1 that blocks uses iron work, the fenestral fabric to use magnetic material or magnetisable material
It makes, conducive to the barrier structure 2 and the separation blocked between substrate 1.
Further, as shown in Figure 1, the fenestral fabric includes multiple subnet grating textures 21.By fenestral fabric
The form for being divided into multiple subnet grating textures 21 facilitates the barrier structure 2 and the assembling blocked between pole plate.
Further, it is described block substrate 1 for connect the barrier structure 2 be provided on one side for adsorb be deposited out
Material absorbent coating.The setting of absorbent coating improves the adsorption capacity for the material that radical occlusion device volatilizees to evaporation source.
The embodiment of the present invention also provides a kind of evaporated device, including evaporation source, vacuum cavity and is set to the vacuum
Above-mentioned vapor deposition radical occlusion device in cavity.
The above is the use of the new type preferred embodiment, it should be noted that those of ordinary skill in the art are come
It says, without departing from the principles of the present invention, following modification and retouching can also be made, these modifications and retouching are also answered
It is considered as the scope of the present invention.
Claims (6)
1. a kind of vapor deposition radical occlusion device, pollution of the material to evaporated device when for preventing vapor deposition, which is characterized in that including:
One blocks substrate;
Barrier structure for the irregularity degree for increasing the surface for blocking substrate, the barrier structure are set to described block
On substrate;
The absorption painting being provided on one side for adsorbing the material being deposited out that substrate is blocked for connecting the barrier structure
Layer;
The barrier structure is that multiple hollow cylinder structures connect the fenestral fabric to be formed;
The fenestral fabric includes multiple mutually independent subnet grating textures;
The fenestral fabric is removably connected to described block on substrate.
2. vapor deposition radical occlusion device according to claim 1, which is characterized in that the surface setting for blocking substrate is concave-convex
Structure is to form the barrier structure.
3. vapor deposition radical occlusion device according to claim 1, which is characterized in that the cross sectional shape of the hollow cylinder structure
For round, quadrangle or hexagon.
4. vapor deposition radical occlusion device according to claim 3, which is characterized in that the fenestral fabric magnetic absorption is in institute
It states and blocks on substrate.
5. vapor deposition radical occlusion device according to claim 4, which is characterized in that the substrate that blocks uses iron work, institute
Fenestral fabric is stated to be made of magnetic material or magnetisable material.
6. a kind of evaporated device, which is characterized in that including evaporation source, vacuum cavity and the power being set in the vacuum cavity
Profit requires 1-5 any one of them vapor deposition radical occlusion devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610059917.8A CN105568224B (en) | 2016-01-28 | 2016-01-28 | Vapor deposition radical occlusion device and evaporated device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610059917.8A CN105568224B (en) | 2016-01-28 | 2016-01-28 | Vapor deposition radical occlusion device and evaporated device |
Publications (2)
Publication Number | Publication Date |
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CN105568224A CN105568224A (en) | 2016-05-11 |
CN105568224B true CN105568224B (en) | 2018-09-21 |
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CN201610059917.8A Expired - Fee Related CN105568224B (en) | 2016-01-28 | 2016-01-28 | Vapor deposition radical occlusion device and evaporated device |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106978589B (en) * | 2017-04-20 | 2019-03-08 | 京东方科技集团股份有限公司 | Retaining device and evaporated device for evaporated device |
CN107227443B (en) * | 2017-08-04 | 2019-07-02 | 京东方科技集团股份有限公司 | Adsorb radical occlusion device and the evaporated device with the device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04202660A (en) * | 1990-11-29 | 1992-07-23 | Mitsubishi Electric Corp | Sputtering apparatus |
JPH05121362A (en) * | 1991-10-25 | 1993-05-18 | Sony Corp | Ecr plasma processor |
JP4609759B2 (en) * | 2005-03-24 | 2011-01-12 | 三井造船株式会社 | Deposition equipment |
JP2007073221A (en) * | 2005-09-05 | 2007-03-22 | Pioneer Electronic Corp | Film forming device and method of manufacturing plasma display panel |
KR101281909B1 (en) * | 2006-06-30 | 2013-07-03 | 엘지디스플레이 주식회사 | Thin film deposition device |
CN201962346U (en) * | 2010-11-09 | 2011-09-07 | 宁波江丰电子材料有限公司 | Anti-adhesion plate structure for vacuum sputtering |
CN203080055U (en) * | 2013-01-30 | 2013-07-24 | 无锡力合光电传感技术有限公司 | Device for fixing mask version on substrate |
JP2014173106A (en) * | 2013-03-07 | 2014-09-22 | Fujifilm Corp | Deposition preventive plate for vacuum film deposition apparatus, vacuum film deposition apparatus, and vacuum film deposition method |
CN103834921B (en) * | 2014-02-28 | 2016-05-18 | 上海和辉光电有限公司 | A kind of evaporation source baffle arrangement |
CN103984202A (en) * | 2014-04-23 | 2014-08-13 | 京东方科技集团股份有限公司 | Masking plate and color film substrate manufacturing method |
CN106637088B (en) * | 2016-12-09 | 2019-05-24 | 合肥鑫晟光电科技有限公司 | A kind of nozzle flapper and evaporation coating device |
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Granted publication date: 20180921 |