TWI323464B - Alternate sensing techniques for non-volatile memories - Google Patents
Alternate sensing techniques for non-volatile memories Download PDFInfo
- Publication number
- TWI323464B TWI323464B TW095149528A TW95149528A TWI323464B TW I323464 B TWI323464 B TW I323464B TW 095149528 A TW095149528 A TW 095149528A TW 95149528 A TW95149528 A TW 95149528A TW I323464 B TWI323464 B TW I323464B
- Authority
- TW
- Taiwan
- Prior art keywords
- states
- state
- memory cells
- voltage
- line
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims description 206
- 238000000034 method Methods 0.000 title claims description 81
- 238000012795 verification Methods 0.000 claims description 27
- 238000007599 discharging Methods 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims description 3
- 230000007774 longterm Effects 0.000 claims 1
- 238000007667 floating Methods 0.000 description 38
- 238000003860 storage Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 19
- 239000010410 layer Substances 0.000 description 13
- 230000010354 integration Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000013500 data storage Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007334 memory performance Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 102100035353 Cyclin-dependent kinase 2-associated protein 1 Human genes 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/565—Multilevel memory comprising elements in triple well structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/321,996 US7349264B2 (en) | 2005-12-28 | 2005-12-28 | Alternate sensing techniques for non-volatile memories |
| US11/320,917 US7616481B2 (en) | 2005-12-28 | 2005-12-28 | Memories with alternate sensing techniques |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200741718A TW200741718A (en) | 2007-11-01 |
| TWI323464B true TWI323464B (en) | 2010-04-11 |
Family
ID=38197637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095149528A TWI323464B (en) | 2005-12-28 | 2006-12-28 | Alternate sensing techniques for non-volatile memories |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1966800A2 (enExample) |
| JP (1) | JP4568365B2 (enExample) |
| KR (1) | KR101357068B1 (enExample) |
| TW (1) | TWI323464B (enExample) |
| WO (1) | WO2007076451A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7616481B2 (en) | 2005-12-28 | 2009-11-10 | Sandisk Corporation | Memories with alternate sensing techniques |
| US7349264B2 (en) | 2005-12-28 | 2008-03-25 | Sandisk Corporation | Alternate sensing techniques for non-volatile memories |
| KR100923810B1 (ko) * | 2007-02-22 | 2009-10-27 | 주식회사 하이닉스반도체 | 메모리 소자와 그 동작 방법 |
| US8416624B2 (en) | 2010-05-21 | 2013-04-09 | SanDisk Technologies, Inc. | Erase and programming techniques to reduce the widening of state distributions in non-volatile memories |
| KR20150128823A (ko) * | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
| US11049557B2 (en) * | 2019-07-19 | 2021-06-29 | Macronix International Co., Ltd. | Leakage current compensation in crossbar array |
| KR102775482B1 (ko) * | 2021-01-19 | 2025-02-28 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 반도체 메모리 디바이스 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5602789A (en) * | 1991-03-12 | 1997-02-11 | Kabushiki Kaisha Toshiba | Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller |
| JPH08249893A (ja) * | 1995-03-07 | 1996-09-27 | Toshiba Corp | 半導体記憶装置 |
| KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
| JP3476952B2 (ja) * | 1994-03-15 | 2003-12-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP2697665B2 (ja) * | 1995-03-31 | 1998-01-14 | 日本電気株式会社 | 半導体記憶装置及び半導体記憶装置からのデータ読み出し方法 |
| US5687114A (en) * | 1995-10-06 | 1997-11-11 | Agate Semiconductor, Inc. | Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell |
| JP4246831B2 (ja) * | 1999-02-08 | 2009-04-02 | 株式会社東芝 | 半導体集積回路装置のデータ判別方法 |
| US6259627B1 (en) * | 2000-01-27 | 2001-07-10 | Multi Level Memory Technology | Read and write operations using constant row line voltage and variable column line load |
| US7630237B2 (en) * | 2003-02-06 | 2009-12-08 | Sandisk Corporation | System and method for programming cells in non-volatile integrated memory devices |
-
2006
- 2006-12-21 WO PCT/US2006/062513 patent/WO2007076451A2/en not_active Ceased
- 2006-12-21 EP EP06848820A patent/EP1966800A2/en not_active Withdrawn
- 2006-12-21 KR KR1020087015402A patent/KR101357068B1/ko not_active Expired - Fee Related
- 2006-12-21 JP JP2008548823A patent/JP4568365B2/ja not_active Expired - Fee Related
- 2006-12-28 TW TW095149528A patent/TWI323464B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1966800A2 (en) | 2008-09-10 |
| KR20080096644A (ko) | 2008-10-31 |
| WO2007076451A3 (en) | 2007-09-20 |
| KR101357068B1 (ko) | 2014-02-03 |
| WO2007076451A2 (en) | 2007-07-05 |
| JP4568365B2 (ja) | 2010-10-27 |
| JP2009522706A (ja) | 2009-06-11 |
| TW200741718A (en) | 2007-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101351847B (zh) | 非易失性存储器的体效应读出方法 | |
| US7616481B2 (en) | Memories with alternate sensing techniques | |
| US10861537B1 (en) | Countermeasures for first read issue | |
| KR101193584B1 (ko) | 조기 데이타를 이용한 비휘발성 메모리의 파이프라인식프로그래밍 | |
| TWI343056B (en) | Charge packet metering for coarse/fine programming of non-volatile memory | |
| TWI328228B (en) | Self-boosting system and method for flash memory cells | |
| US7894263B2 (en) | High voltage generation and control in source-side injection programming of non-volatile memory | |
| JP4510031B2 (ja) | 非揮発性メモリの雑／ファインプログラミングのための効率的ベリフィケーション | |
| US9047970B2 (en) | Word line coupling for deep program-verify, erase-verify and read | |
| JP5342013B2 (ja) | 空間的変動及び温度変動に対して低い感受性を有する検出回路と検出方法 | |
| KR101121473B1 (ko) | 반도체 장치에서의 노이즈 감소 | |
| US7733701B2 (en) | Reading non-volatile storage with efficient setup | |
| JP2007520029A (ja) | 非揮発性メモリの雑／ファインプログラミングのための可変電流シンキング | |
| US7369437B2 (en) | System for reading non-volatile storage with efficient setup | |
| US20220328112A1 (en) | Multi-level program pulse for programming single level memory cells to reduce damage | |
| US11120880B1 (en) | Command sequence for hybrid erase mode for high data retention in memory device | |
| TWI323464B (en) | Alternate sensing techniques for non-volatile memories | |
| WO2024049529A1 (en) | Non-volatile memory with tier-wise ramp down after program-verify | |
| US12469560B2 (en) | Non-volatile memory with dummy word line assisted pre-charge | |
| US20250095740A1 (en) | Non-volatile memory with efficient precharge in sub-block mode | |
| TWI334142B (en) | Method for using non-volatile storage and non-volatile storage system | |
| US12100461B2 (en) | Non-volatile memory with suspension period during programming | |
| US20250329390A1 (en) | Three dimension nand dual-string program | |
| US20240203506A1 (en) | Non-volatile memory with hole pre-charge and isolated signal lines |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |