TW200741718A - Alternate sensing techniques for non-volatile memories - Google Patents

Alternate sensing techniques for non-volatile memories

Info

Publication number
TW200741718A
TW200741718A TW095149528A TW95149528A TW200741718A TW 200741718 A TW200741718 A TW 200741718A TW 095149528 A TW095149528 A TW 095149528A TW 95149528 A TW95149528 A TW 95149528A TW 200741718 A TW200741718 A TW 200741718A
Authority
TW
Taiwan
Prior art keywords
bit line
cell
voltage
shut
charge
Prior art date
Application number
TW095149528A
Other languages
Chinese (zh)
Other versions
TWI323464B (en
Inventor
Nima Mokhlesi
Jeffrey W Lutze
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/321,996 external-priority patent/US7349264B2/en
Priority claimed from US11/320,917 external-priority patent/US7616481B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200741718A publication Critical patent/TW200741718A/en
Application granted granted Critical
Publication of TWI323464B publication Critical patent/TWI323464B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/565—Multilevel memory comprising elements in triple well structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

The present invention presents a scheme for sensing memory cells. Selected memory cells are discharged through their channels to ground and then have a voltage level placed on the traditional source and another voltage level placed on the control gate, and allowing the cell bit line to charge up. The bit line of the memory cell will then charge up until the bit line voltage becomes sufficiently high to shut off any further cell conduction. The rise of the bit line voltage will occur at a rate and to a level dependent upon the data state of the cell, and the cell will then shut off when the bit line reaches a high enough level such that the body effect affected memory cell threshold is reached, at which point the current essentially shuts off. A particular embodiment performs multiple such sensing sub-operations, each with a different control gate voltage, but with multiple states being sensed in each operation by charging the previously discharged cells up through their source.
TW095149528A 2005-12-28 2006-12-28 Alternate sensing techniques for non-volatile memories TWI323464B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/321,996 US7349264B2 (en) 2005-12-28 2005-12-28 Alternate sensing techniques for non-volatile memories
US11/320,917 US7616481B2 (en) 2005-12-28 2005-12-28 Memories with alternate sensing techniques

Publications (2)

Publication Number Publication Date
TW200741718A true TW200741718A (en) 2007-11-01
TWI323464B TWI323464B (en) 2010-04-11

Family

ID=38197637

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149528A TWI323464B (en) 2005-12-28 2006-12-28 Alternate sensing techniques for non-volatile memories

Country Status (5)

Country Link
EP (1) EP1966800A2 (en)
JP (1) JP4568365B2 (en)
KR (1) KR101357068B1 (en)
TW (1) TWI323464B (en)
WO (1) WO2007076451A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7349264B2 (en) 2005-12-28 2008-03-25 Sandisk Corporation Alternate sensing techniques for non-volatile memories
US7616481B2 (en) 2005-12-28 2009-11-10 Sandisk Corporation Memories with alternate sensing techniques
KR100923810B1 (en) * 2007-02-22 2009-10-27 주식회사 하이닉스반도체 Memory device and method of operating the same
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
WO2014142332A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US11049557B2 (en) * 2019-07-19 2021-06-29 Macronix International Co., Ltd. Leakage current compensation in crossbar array

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08249893A (en) * 1995-03-07 1996-09-27 Toshiba Corp Semiconductor memory
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
KR0169267B1 (en) * 1993-09-21 1999-02-01 사토 후미오 Nonvolatile semiconductor memory device
JP3476952B2 (en) * 1994-03-15 2003-12-10 株式会社東芝 Nonvolatile semiconductor memory device
JP2697665B2 (en) * 1995-03-31 1998-01-14 日本電気株式会社 Semiconductor storage device and method of reading data from semiconductor storage device
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
JP4246831B2 (en) * 1999-02-08 2009-04-02 株式会社東芝 Data identification method for semiconductor integrated circuit device
US6259627B1 (en) * 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US7630237B2 (en) * 2003-02-06 2009-12-08 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices

Also Published As

Publication number Publication date
WO2007076451A3 (en) 2007-09-20
JP2009522706A (en) 2009-06-11
EP1966800A2 (en) 2008-09-10
JP4568365B2 (en) 2010-10-27
KR20080096644A (en) 2008-10-31
KR101357068B1 (en) 2014-02-03
WO2007076451A2 (en) 2007-07-05
TWI323464B (en) 2010-04-11

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees