KR101357068B1 - 비휘발성 메모리들에 대한 바디 효과 감지 방법 - Google Patents

비휘발성 메모리들에 대한 바디 효과 감지 방법 Download PDF

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Publication number
KR101357068B1
KR101357068B1 KR1020087015402A KR20087015402A KR101357068B1 KR 101357068 B1 KR101357068 B1 KR 101357068B1 KR 1020087015402 A KR1020087015402 A KR 1020087015402A KR 20087015402 A KR20087015402 A KR 20087015402A KR 101357068 B1 KR101357068 B1 KR 101357068B1
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South Korea
Prior art keywords
state
memory cells
voltage
bit line
word line
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KR1020087015402A
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English (en)
Korean (ko)
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KR20080096644A (ko
Inventor
니마 모크흘레시
제프레이 더블유. 루트제
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샌디스크 테크놀로지스, 인코포레이티드
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Priority claimed from US11/321,996 external-priority patent/US7349264B2/en
Priority claimed from US11/320,917 external-priority patent/US7616481B2/en
Application filed by 샌디스크 테크놀로지스, 인코포레이티드 filed Critical 샌디스크 테크놀로지스, 인코포레이티드
Publication of KR20080096644A publication Critical patent/KR20080096644A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/565—Multilevel memory comprising elements in triple well structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020087015402A 2005-12-28 2006-12-21 비휘발성 메모리들에 대한 바디 효과 감지 방법 Expired - Fee Related KR101357068B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/321,996 US7349264B2 (en) 2005-12-28 2005-12-28 Alternate sensing techniques for non-volatile memories
US11/320,917 US7616481B2 (en) 2005-12-28 2005-12-28 Memories with alternate sensing techniques
US11/320,917 2005-12-28
US11/321,996 2005-12-28
PCT/US2006/062513 WO2007076451A2 (en) 2005-12-28 2006-12-21 Body effect sensing method for non-volatile memories

Publications (2)

Publication Number Publication Date
KR20080096644A KR20080096644A (ko) 2008-10-31
KR101357068B1 true KR101357068B1 (ko) 2014-02-03

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KR1020087015402A Expired - Fee Related KR101357068B1 (ko) 2005-12-28 2006-12-21 비휘발성 메모리들에 대한 바디 효과 감지 방법

Country Status (5)

Country Link
EP (1) EP1966800A2 (enExample)
JP (1) JP4568365B2 (enExample)
KR (1) KR101357068B1 (enExample)
TW (1) TWI323464B (enExample)
WO (1) WO2007076451A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7616481B2 (en) 2005-12-28 2009-11-10 Sandisk Corporation Memories with alternate sensing techniques
US7349264B2 (en) 2005-12-28 2008-03-25 Sandisk Corporation Alternate sensing techniques for non-volatile memories
KR100923810B1 (ko) * 2007-02-22 2009-10-27 주식회사 하이닉스반도체 메모리 소자와 그 동작 방법
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
KR20150128823A (ko) * 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
US11049557B2 (en) * 2019-07-19 2021-06-29 Macronix International Co., Ltd. Leakage current compensation in crossbar array
KR102775482B1 (ko) * 2021-01-19 2025-02-28 양쯔 메모리 테크놀로지스 씨오., 엘티디. 반도체 메모리 디바이스

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08249893A (ja) * 1995-03-07 1996-09-27 Toshiba Corp 半導体記憶装置
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3476952B2 (ja) * 1994-03-15 2003-12-10 株式会社東芝 不揮発性半導体記憶装置
JP2697665B2 (ja) * 1995-03-31 1998-01-14 日本電気株式会社 半導体記憶装置及び半導体記憶装置からのデータ読み出し方法
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
JP4246831B2 (ja) * 1999-02-08 2009-04-02 株式会社東芝 半導体集積回路装置のデータ判別方法
US6259627B1 (en) * 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
US7630237B2 (en) * 2003-02-06 2009-12-08 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

Also Published As

Publication number Publication date
EP1966800A2 (en) 2008-09-10
KR20080096644A (ko) 2008-10-31
TWI323464B (en) 2010-04-11
WO2007076451A3 (en) 2007-09-20
WO2007076451A2 (en) 2007-07-05
JP4568365B2 (ja) 2010-10-27
JP2009522706A (ja) 2009-06-11
TW200741718A (en) 2007-11-01

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