JP4728726B2
(ja)
|
2005-07-25 |
2011-07-20 |
株式会社東芝 |
半導体記憶装置
|
JP4846384B2
(ja)
*
|
2006-02-20 |
2011-12-28 |
株式会社東芝 |
半導体記憶装置
|
JP4836608B2
(ja)
|
2006-02-27 |
2011-12-14 |
株式会社東芝 |
半導体記憶装置
|
WO2007132453A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Distortion estimation and cancellation in memory devices
|
KR101202537B1
(ko)
|
2006-05-12 |
2012-11-19 |
애플 인크. |
메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩
|
WO2007132456A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Memory device with adaptive capacity
|
JP2007305267A
(ja)
*
|
2006-05-15 |
2007-11-22 |
Toshiba Corp |
半導体記憶装置
|
JP4810350B2
(ja)
*
|
2006-08-14 |
2011-11-09 |
株式会社東芝 |
半導体記憶装置
|
US8060806B2
(en)
|
2006-08-27 |
2011-11-15 |
Anobit Technologies Ltd. |
Estimation of non-linear distortion in memory devices
|
US7561472B2
(en)
|
2006-09-11 |
2009-07-14 |
Micron Technology, Inc. |
NAND architecture memory with voltage sensing
|
WO2008053472A2
(en)
*
|
2006-10-30 |
2008-05-08 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
WO2008068747A2
(en)
|
2006-12-03 |
2008-06-12 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
JP5279729B2
(ja)
*
|
2007-02-07 |
2013-09-04 |
モサイド・テクノロジーズ・インコーポレーテッド |
ソース側非対称プリチャージプログラム方式
|
KR100875538B1
(ko)
*
|
2007-02-27 |
2008-12-26 |
삼성전자주식회사 |
불휘발성 메모리 장치 및 그것의 프로그램 및 소거 방법
|
CN101715595A
(zh)
|
2007-03-12 |
2010-05-26 |
爱诺彼得技术有限责任公司 |
存储器单元读取阈的自适应估计
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
US7577036B2
(en)
*
|
2007-05-02 |
2009-08-18 |
Micron Technology, Inc. |
Non-volatile multilevel memory cells with data read of reference cells
|
US8429493B2
(en)
|
2007-05-12 |
2013-04-23 |
Apple Inc. |
Memory device with internal signap processing unit
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
US7643337B2
(en)
*
|
2007-07-17 |
2010-01-05 |
Macronix International Co., Ltd. |
Multi-bit flash memory and reading method thereof
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
JP4510060B2
(ja)
|
2007-09-14 |
2010-07-21 |
株式会社東芝 |
不揮発性半導体記憶装置の読み出し/書き込み制御方法
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8527819B2
(en)
|
2007-10-19 |
2013-09-03 |
Apple Inc. |
Data storage in analog memory cell arrays having erase failures
|
CN101414480B
(zh)
*
|
2007-10-19 |
2011-06-01 |
财团法人工业技术研究院 |
相变存储单元控制装置及增加相变存储单元可靠度的方法
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
KR101509836B1
(ko)
|
2007-11-13 |
2015-04-06 |
애플 인크. |
멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
JP2009252264A
(ja)
*
|
2008-04-02 |
2009-10-29 |
Toshiba Corp |
半導体記憶装置およびその駆動方法
|
US7729166B2
(en)
|
2008-07-02 |
2010-06-01 |
Mosaid Technologies Incorporated |
Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
|
US8498151B1
(en)
|
2008-08-05 |
2013-07-30 |
Apple Inc. |
Data storage in analog memory cells using modified pass voltages
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
JP5127665B2
(ja)
|
2008-10-23 |
2013-01-23 |
株式会社東芝 |
半導体記憶装置
|
US8713330B1
(en)
|
2008-10-30 |
2014-04-29 |
Apple Inc. |
Data scrambling in memory devices
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8174857B1
(en)
|
2008-12-31 |
2012-05-08 |
Anobit Technologies Ltd. |
Efficient readout schemes for analog memory cell devices using multiple read threshold sets
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
KR100996040B1
(ko)
*
|
2009-01-21 |
2010-11-22 |
주식회사 하이닉스반도체 |
불휘발성 메모리 장치의 동작 방법
|
JP5525164B2
(ja)
|
2009-02-03 |
2014-06-18 |
株式会社東芝 |
半導体集積回路
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
JP5197448B2
(ja)
*
|
2009-03-13 |
2013-05-15 |
株式会社東芝 |
抵抗変化メモリ装置
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8199576B2
(en)
|
2009-04-08 |
2012-06-12 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
|
US8351236B2
(en)
|
2009-04-08 |
2013-01-08 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
KR101015758B1
(ko)
*
|
2009-05-29 |
2011-02-22 |
주식회사 하이닉스반도체 |
불휘발성 메모리 장치 및 이를 이용한 프로그램 동작 방법
|
KR101055568B1
(ko)
*
|
2009-06-17 |
2011-08-08 |
한양대학교 산학협력단 |
플래시 메모리 장치의 센싱 회로 및 플래시 메모리 장치의 센싱 방법
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8572311B1
(en)
|
2010-01-11 |
2013-10-29 |
Apple Inc. |
Redundant data storage in multi-die memory systems
|
JP2011204298A
(ja)
*
|
2010-03-24 |
2011-10-13 |
Toshiba Corp |
不揮発性半導体メモリ
|
US8432729B2
(en)
*
|
2010-04-13 |
2013-04-30 |
Mosaid Technologies Incorporated |
Phase-change memory with multiple polarity bits having enhanced endurance and error tolerance
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US20110297912A1
(en)
|
2010-06-08 |
2011-12-08 |
George Samachisa |
Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
|
US8526237B2
(en)
|
2010-06-08 |
2013-09-03 |
Sandisk 3D Llc |
Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8645794B1
(en)
|
2010-07-31 |
2014-02-04 |
Apple Inc. |
Data storage in analog memory cells using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
TWI545587B
(zh)
|
2010-08-06 |
2016-08-11 |
半導體能源研究所股份有限公司 |
半導體裝置及驅動半導體裝置的方法
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
KR101774471B1
(ko)
|
2010-11-25 |
2017-09-05 |
삼성전자주식회사 |
불 휘발성 메모리 장치 및 그것의 읽기 방법
|
KR101155451B1
(ko)
|
2011-08-31 |
2012-06-15 |
테세라, 인코포레이티드 |
Dram 보안 소거
|
US9153302B2
(en)
*
|
2012-01-31 |
2015-10-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Memory and method of operating the same
|
JP2013218758A
(ja)
*
|
2012-04-06 |
2013-10-24 |
Genusion:Kk |
不揮発性半導体記憶装置
|
US8811084B2
(en)
|
2012-08-30 |
2014-08-19 |
Micron Technology, Inc. |
Memory array with power-efficient read architecture
|
KR102166731B1
(ko)
*
|
2013-05-31 |
2020-10-16 |
에스케이하이닉스 주식회사 |
데이터 전달회로 및 이를 포함하는 메모리
|
JP5678151B1
(ja)
*
|
2013-09-18 |
2015-02-25 |
力晶科技股▲ふん▼有限公司 |
不揮発性半導体記憶装置とその制御方法
|
KR102252692B1
(ko)
*
|
2014-07-15 |
2021-05-17 |
삼성전자주식회사 |
누설 전류 감지 장치 및 이를 포함하는 비휘발성 메모리 장치
|
KR102172869B1
(ko)
|
2014-08-11 |
2020-11-03 |
삼성전자주식회사 |
기준 전압 발생기를 포함하는 메모리 장치
|
EP3002760A1
(de)
*
|
2014-09-30 |
2016-04-06 |
Anvo-Systems Dresden GmbH |
Flash-speicheranordnung
|
US9633710B2
(en)
|
2015-01-23 |
2017-04-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for operating semiconductor device
|
KR102500222B1
(ko)
*
|
2016-03-28 |
2023-02-17 |
에스케이하이닉스 주식회사 |
데이터 저장 장치 및 그것의 동작 방법
|
JP2017216025A
(ja)
*
|
2016-05-31 |
2017-12-07 |
東芝メモリ株式会社 |
半導体記憶装置
|
KR20180047829A
(ko)
*
|
2016-11-01 |
2018-05-10 |
에스케이하이닉스 주식회사 |
저항성 메모리 장치
|
US10586598B2
(en)
|
2017-09-14 |
2020-03-10 |
Silicon Storage Technology, Inc. |
System and method for implementing inference engine by optimizing programming operation
|
CN109872740A
(zh)
*
|
2017-12-01 |
2019-06-11 |
上海磁宇信息科技有限公司 |
一种使用对称阵列参考单元的mram芯片
|
US10825489B2
(en)
*
|
2018-08-29 |
2020-11-03 |
Texas Instruments Incorporated |
Latching sense amplifier
|
KR20200117374A
(ko)
*
|
2019-04-04 |
2020-10-14 |
에스케이하이닉스 주식회사 |
비휘발성 메모리 장치, 이의 동작 방법 및 이를 이용하는 시스템
|
CN110137348B
(zh)
*
|
2019-04-11 |
2023-01-31 |
上海集成电路研发中心有限公司 |
一种多路复用多值阻变结构及其形成的神经网络
|
CN112420119B
(zh)
*
|
2020-12-11 |
2023-05-30 |
西安紫光国芯半导体有限公司 |
包含转换模块的存储器以及阵列单元模块
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|