TWI311689B - Chemical amplification type positive photoresist composition - Google Patents

Chemical amplification type positive photoresist composition Download PDF

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Publication number
TWI311689B
TWI311689B TW094129785A TW94129785A TWI311689B TW I311689 B TWI311689 B TW I311689B TW 094129785 A TW094129785 A TW 094129785A TW 94129785 A TW94129785 A TW 94129785A TW I311689 B TWI311689 B TW I311689B
Authority
TW
Taiwan
Prior art keywords
group
component
photoresist composition
acid
mass
Prior art date
Application number
TW094129785A
Other languages
English (en)
Chinese (zh)
Other versions
TW200617601A (en
Inventor
Toshiaki Tachi
Ken Miyagi
Takako Suzuki
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200617601A publication Critical patent/TW200617601A/zh
Application granted granted Critical
Publication of TWI311689B publication Critical patent/TWI311689B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW094129785A 2004-09-16 2005-08-30 Chemical amplification type positive photoresist composition TWI311689B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004269704A JP4707987B2 (ja) 2004-09-16 2004-09-16 化学増幅型ポジ型ホトレジスト組成物

Publications (2)

Publication Number Publication Date
TW200617601A TW200617601A (en) 2006-06-01
TWI311689B true TWI311689B (en) 2009-07-01

Family

ID=36163364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129785A TWI311689B (en) 2004-09-16 2005-08-30 Chemical amplification type positive photoresist composition

Country Status (4)

Country Link
JP (1) JP4707987B2 (ko)
KR (1) KR100808427B1 (ko)
CN (1) CN1749857A (ko)
TW (1) TWI311689B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010026460A (ja) * 2008-07-24 2010-02-04 Fujifilm Corp ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
KR102352289B1 (ko) * 2014-04-17 2022-01-19 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 디스플레이 기판의 제조 방법
KR102194820B1 (ko) 2014-06-10 2020-12-24 삼성디스플레이 주식회사 수지 조성물, 이를 사용하는 표시 장치의 제조 방법 및 그 방법으로 제조된 표시 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4132642B2 (ja) * 1999-11-15 2008-08-13 東京応化工業株式会社 ネガ型レジスト基材及びそれを用いたイオン注入基板の製造方法
JP3849486B2 (ja) * 2001-10-19 2006-11-22 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP3918542B2 (ja) * 2001-12-11 2007-05-23 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP2003345024A (ja) * 2002-03-20 2003-12-03 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP4101591B2 (ja) * 2002-08-30 2008-06-18 東京応化工業株式会社 厚膜用化学増幅型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法
JP4053402B2 (ja) * 2002-10-23 2008-02-27 東京応化工業株式会社 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP4071611B2 (ja) * 2002-12-06 2008-04-02 東京応化工業株式会社 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
KR101018748B1 (ko) * 2003-03-03 2011-03-04 삼성전자주식회사 화학증폭형 형태의 ｌｃｄ용 포토레지스트 조성물

Also Published As

Publication number Publication date
CN1749857A (zh) 2006-03-22
KR20060051216A (ko) 2006-05-19
JP2006084798A (ja) 2006-03-30
KR100808427B1 (ko) 2008-02-29
JP4707987B2 (ja) 2011-06-22
TW200617601A (en) 2006-06-01

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