TWI310990B - Quantum well transistor using high dielectric constant dielectric layer - Google Patents
Quantum well transistor using high dielectric constant dielectric layer Download PDFInfo
- Publication number
- TWI310990B TWI310990B TW095100171A TW95100171A TWI310990B TW I310990 B TWI310990 B TW I310990B TW 095100171 A TW095100171 A TW 095100171A TW 95100171 A TW95100171 A TW 95100171A TW I310990 B TWI310990 B TW I310990B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- gate
- quantum well
- barrier layer
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
1310990 (1) 九、發明說明 【發明所屬之技術領域】 本發明係相關於量子井電晶體的形成。 【先前技術】 量子井是一限制粒子在一維空間中迫使粒子佔據一平 面區之電位井。夾置在具有比第一材料寬的能帶隙之兩層 Φ 材料之間的第一材料可形成量子井。量子井或高電子遷移 率電晶體(HEMTs )是具有在有著不同能帶隙的兩材料之 間的接面霄作通道之場效電晶體。接面可顯現出非常低的 電阻或高電子遷移率。施加到閘極的電壓可改變接面的導 電性。 量子井電晶體容易傾向高閘極漏洩及寄生串聯電阻。 尤其是’使用來自週期表的行III到V之元素的量子井電 晶體容易有此種問題。此種材料的例子包括砷化銦鎵/砷 φ 化銦鋁和銻化銦/銻化鋁銦。 在量子井電晶體的目前技藝狀態中,直接Schottky 金屬閘極可沉積在屏障層上而形成易有高閘極漏洩之 Schottky接面。而且,源極和汲極區可被圖型化,並且在 •閘極圖型化之前完成源極和汲極金屬化接點。在處理中, 閘極圖型化爲最後一步驟,如此產生非自我對準的源極汲 極區。此種非自我對準的源極汲極區易有寄生串聯電阻。 具有寄生串聯電阻的裝置可能顯現出不良的性能。 如此,需要有更好的方式製造量子井。 -5- (2) 1310990 【發明內容及實施方式】 參照圖I及10,空乏(圖1)或增強模式(圖10) 自我對準源極汲極量子井可被形成有高介電常數介電層 24及當作Schottky閘金屬的金屬閘電極38。本文所使用 的''高介電常數"意指具有介電常數10或更高之介質。 在矽基底1 0上可以是調節層1 2。在一實施例中,調 • 節層12可以是具有15%銘的AllnSb。在砂基底1〇上, 鍺層(未圖示)也可包括在層12下。調節層12用於調節 晶格失配問題並且限制那層1 2中的位錯或故障。 根據本發明的一實施例,在調節層12上可形成下屏 障層1 4。例如可由銻化鋁銦或砷化銦鋁形成下屏障層J 4 當作兩例子。可由能帶隙比下面量子井1 6高的材料形成 下屏障層14。在下屏障層14上形成未摻雜量子井16。在 一實施例中’可由銻化銦或砷化銦鎵形成未摻雜量子井 • 1 6當作兩例子。 接著’可形成上屏障層20。可由與下屏障層14相同 或不问的材料形成上屏障層20。上屏障層20可包括5慘 雜施體層18。可使用矽或碲進行(5摻雜當作兩例子。摻 、雜施體層18供應載子到量子井16用於輸送。藉由在控制 的方式下使Te或Si摻雜劑能夠從固體源流入MBE (分 子束外延)室內以形成摻雜施體層1 8。 如此,量子井1 6夾置在上和下屏障層2 0及1 4之間 。上屏障層20可以是電子供應層,其厚度與形成閘電極
-6- 1310990 _ (3) 38之Schottky金屬層的功函數將一起決定電晶體的臨界 電壓。 金屬閘電極38可形成在高介電常數介電材料26上。 材料2 6圍住金屬閘電極3 8在三側上。接著’可以自我對 準源極汲極金屬化接點22及間隔物層28圍住高介電常數 層2 6。 如圖2所示,可藉由形成結構直到並且包括n +摻雜 # 層3 0開始圖1所示的空乏模式電晶體和圖1 0的增強模式 電晶體之製造。層30可包括摻雜有Te及Si雜質的銻化 銦或砷化銦鎵。可高度摻雜層3 0用以稍後在完成的電晶 體中形成源極汲極區。 可使用分子束外延或金屬有機化學汽相沉積生長多層 外延基底1 〇當作兩例子。 參照圖3,根據本發明的一實施例,虛擬閘極3 2可 形成在η +慘雜層3 0上。可在圖型化及蝕刻掉氮化物、碳 φ 化物、或氧化物薄膜(未圖示)之後形成虛擬閘極3 2。 有利的是,可以低溫沉積形成這些薄膜以維持外延層的完 整。可例如由氮化矽或金屬形成虛擬閘極3 2。在氮化矽 虛擬閘極3 2的例子中可以平板印刷及蝕刻,或在諸如鋁 '金屬虛擬閘極等金屬閘32的例子中可以蒸發及拔除藉由 圖型化形成虛擬閘極3 2。 接著參照圖4,可形成圍住虛擬閘極3 2之低溫矽氧 化物、氮化物、或碳化物間隔物2 8。可利用低溫沉積技 術然後各向異性蝕刻以形成間隔物2 8。 (4) 1310990 接著到圖5,可藉由電子束蒸發或反應濺射法然後化 學機械平面化處理以形成自我對準源極汲極金屬化接點 22,用以產生到形成在層30中的源極汲極區之自我對準 接點。例如可由鈦或金形成源極汲極金屬化接點22。 然後,如圖6所示,可使用濕蝕刻選擇性蝕刻掉虛擬 閘極3 2。結果,形成開口 3 4。金屬虛擬閘極移除處理例 如可包括使用磷酸蝕刻的濕蝕刻。就氮化物虛擬閘極而言 φ ,可使用氫氯酸蝕刻。就二氧化矽虛擬閘極而言,可使用 氫氟酸蝕刻。濕蝕刻處理選擇性處理n +摻雜層3 0。 然後’如圖7所示,就空乏模式裝置而言,可達成 n +摻雜層30之選擇性蝕刻以形成具有翼36及基座34之 倒置的T型開口。乾或濕蝕刻可被用於形成翼3 6。例如 ’使用諸如檸檬酸加過氧化氫等濕蝕刻處理選擇性移除 η +撥雜層3 0。 高介電常數材料26的原子層沉積之後可接著金屬閘 Φ 電極3 8的電子束蒸發或濺射。閘電極3 8例如可以是鉑、 鎢、把、或鉬當作一些例子。高介電常數介質2 6例如可 以是二氧化飴或二氧化鉻當作兩例子。可與有機先質(諸 如用於二氧化鈴沉積的烷氧化物先質)一起使用低溫沉積 處理。 然後’圖8所示的結構可經過金屬閘電極3 8及高介 電常數介質26的化學機械拋光以達成圖9所示的空乏模 式結構。 如圖 7所示’在蝕刻 η +摻雜層30以形成包括翼36 8 1310990 ' (5) 及基座34的開口之後,可經由電子供應屏障層20進行另 一凹處蝕刻,如圖1 0所示,停止在剛好<5摻雜層1 8上以 製作增強模式裝置。時間驅動蝕刻(未圖示在圖7 )可局 部凹進圖7的電子供應屏障層20內及間隔物28下,以增 加電晶體的臨界電壓和形成增強模式裝置。 裝置層結構經過高介電常數沉積處理。接著Schottky 閘電極3 8的濺射沉積或電子束沉積。閘電極3 8功函數的 # 選擇越高越好以產生增強模式裝置。 本發明的某些實施例可從倂入高介電常數介質20到 電極38的Schottky閘金屬和半導體屏障層20之間以達 成較低的閘極漏洩。在某些實施例中,自我對準到閘極的 高摻雜源極汲極區產生較低的寄生串聯電阻。在某些實施 例中,電子供應屏障層2 0的凹處蝕刻到想要的厚度形成 增強模式量子井場效電晶體。 儘管已經由有限數目的實施例說明本發明,但是精於 • 本技藝之人士將明白可自此有許多修正和變化。附錄於後 的申請專利範圍用於涵蓋此種落在本發明的真正精神和範 圍之修正和變化。 【圖式簡單說明】 圖1爲本發明的一實施例之放大橫剖面圖; 圖2爲根據本發明的一實施例之早期製造階段中的圖 1所示之實施例的放大橫剖面圖; 圖3爲根據本發明的一實施例之後續處理後的圖2所 -9 - 也 1310990 . (6) 示之實施例的放大橫剖面圖; 圖4爲根據本發明的一實施例之後續處理後的對應於 圖3之放大橫剖面圖; 圖5爲根據本發明的一實施例之後續處理後的對應於 圖4之放大橫剖面圖; 圖6爲根據本發明的一實施例之後續處理後的對應於 圖5之放大橫剖面圖; g 圖7爲根據本發明的一實施例之後續處理後的對應於 圖6之放大橫剖面圖; 圖8爲根據本發明的另一實施例之後續處理後的對應 於圖7之放大橫剖面圖; 圖9爲根據本發明的空乏模式實施例之後續處理後的 對應於圖8之放大橫剖面圖;及 圖】〇爲根據本發明的增強模式實施例之後續處理後 的對應於圖7之放大橫剖面圖。 【主要元件符號說明】 1 〇 :矽基底 1 2 :調節層 1 4 :下屏障層 1 6 :未摻雜量子井 1 8 : (5摻雜施體層 20 :上屏障層 22 :自我對準源極汲極金屬化接點
-10-
V (7) (7)1310990 24:高介電常數介電層 26:高介電常數材料 2 8 :間隔物層 3 0 : η +摻雜層 3 2 :虛擬閘極 34 :開口 34 :基座 36 :翼 3 8 :金屬閘電極
-11 -
Claims (1)
1^10990 十、申請專利範圍 附件2 A : 第9 5 1 0 0 1 7 1號專利申請案 中文申請專利範圍替換本 ί.·' . -f 斗 民國97年3月5 —白修正 η 一 1· 一種製造量子井電晶體之方法,包含:. 形成一量子井; 在該量子井上形成一屏障層; •在該屏障層上形成一閘介電質; 在該閘介電質上形成一閘電極; 形成一自我對準源極汲極; 選擇性地形成一空乏模式裝置,藉著在該屏障層的頂 部上形成該閘介電質;及 選擇性地形成一增強模式裝置,藉著在該屏障層內形 成閘氧化物。 2. 根據申請專利範圍第1項之方法,包括從一摻雜 Φ 層形成一自我對準源極汲極,在該摻雜層中形成一開口, 並且在該摻雜層中沉積一閘電極。 3. 根據申請專利範圍第2項之方法,包括沉積一金 屬閘電極。 ' 4.根據申請專利範圍第3項之方法,包括在該摻雜 • 層上使用一虛擬閘極’並且隨後移除該虛擬閘極。 5. 根據申請專利範圍第4項之方法,包括使用該虛 擬閘極界定一側壁間隔物。 6. 根據申請專利範圍第5項之方法,包括使用該側 1310990 f 壁間隔物以界定自我對準源極汲極接點。 7. 根據申請專利範圍第6項之方法,包括在界定該 間隔物和該接點之後移除該虛擬閘極。 8. 根據申請專利範圍第7項之方法,包括使用該接 點和該間隔物當作一掩模以蝕刻該摻雜層及界定一源極和 汲極。 9 ·根據申請專利範圍第8項之方法,包括蝕刻該摻 • 雜層以便底切該間隔物。 10·根據申請專利範圍第9項之方法,包括在該開口 中沉積具有大於10的介電常數之一層。 Π·根據申請專利範圍第10項之方法,包括在該介 電質上形成一金屬閘電極。
-2-
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/028,378 US20060148182A1 (en) | 2005-01-03 | 2005-01-03 | Quantum well transistor using high dielectric constant dielectric layer |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200636998A TW200636998A (en) | 2006-10-16 |
TWI310990B true TWI310990B (en) | 2009-06-11 |
Family
ID=36204261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095100171A TWI310990B (en) | 2005-01-03 | 2006-01-03 | Quantum well transistor using high dielectric constant dielectric layer |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060148182A1 (zh) |
KR (1) | KR100948211B1 (zh) |
CN (1) | CN101133498B (zh) |
DE (1) | DE112006000133T5 (zh) |
GB (1) | GB2438331B (zh) |
TW (1) | TWI310990B (zh) |
WO (1) | WO2006074197A1 (zh) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
TWI401803B (zh) * | 2005-06-30 | 2013-07-11 | Semiconductor Energy Lab | 微結構、微機械、有機電晶體、電氣設備、及其製造方法 |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US20070093055A1 (en) * | 2005-10-24 | 2007-04-26 | Pei-Yu Chou | High-aspect ratio contact hole and method of making the same |
US7485503B2 (en) * | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8183556B2 (en) | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US20080142786A1 (en) * | 2006-12-13 | 2008-06-19 | Suman Datta | Insulated gate for group iii-v devices |
US7601980B2 (en) * | 2006-12-29 | 2009-10-13 | Intel Corporation | Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures |
US9076852B2 (en) * | 2007-01-19 | 2015-07-07 | International Rectifier Corporation | III nitride power device with reduced QGD |
US7928426B2 (en) * | 2007-03-27 | 2011-04-19 | Intel Corporation | Forming a non-planar transistor having a quantum well channel |
US7435987B1 (en) * | 2007-03-27 | 2008-10-14 | Intel Corporation | Forming a type I heterostructure in a group IV semiconductor |
US7713803B2 (en) * | 2007-03-29 | 2010-05-11 | Intel Corporation | Mechanism for forming a remote delta doping layer of a quantum well structure |
US7791063B2 (en) * | 2007-08-30 | 2010-09-07 | Intel Corporation | High hole mobility p-channel Ge transistor structure on Si substrate |
US20100006895A1 (en) * | 2008-01-10 | 2010-01-14 | Jianjun Cao | Iii-nitride semiconductor device |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US8115235B2 (en) * | 2009-02-20 | 2012-02-14 | Intel Corporation | Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same |
CN101853882B (zh) | 2009-04-01 | 2016-03-23 | 台湾积体电路制造股份有限公司 | 具有改进的开关电流比的高迁移率多面栅晶体管 |
US8816391B2 (en) * | 2009-04-01 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain engineering of devices with high-mobility channels |
US8455860B2 (en) * | 2009-04-30 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing source/drain resistance of III-V based transistors |
US9768305B2 (en) * | 2009-05-29 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gradient ternary or quaternary multiple-gate transistor |
US8617976B2 (en) * | 2009-06-01 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain re-growth for manufacturing III-V based transistors |
US8368052B2 (en) * | 2009-12-23 | 2013-02-05 | Intel Corporation | Techniques for forming contacts to quantum well transistors |
US8283653B2 (en) | 2009-12-23 | 2012-10-09 | Intel Corporation | Non-planar germanium quantum well devices |
US8193523B2 (en) * | 2009-12-30 | 2012-06-05 | Intel Corporation | Germanium-based quantum well devices |
CN102254824B (zh) * | 2010-05-20 | 2013-10-02 | 中国科学院微电子研究所 | 半导体器件及其形成方法 |
US8455929B2 (en) | 2010-06-30 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of III-V based devices on semiconductor substrates |
US8084311B1 (en) | 2010-11-17 | 2011-12-27 | International Business Machines Corporation | Method of forming replacement metal gate with borderless contact and structure thereof |
CN103165429B (zh) * | 2011-12-15 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极形成方法 |
JP2013138201A (ja) | 2011-12-23 | 2013-07-11 | Imec | 置換ゲートプロセスに従って電界効果半導体デバイスを製造する方法 |
EP2696369B1 (en) | 2012-08-10 | 2021-01-13 | IMEC vzw | Methods for manufacturing a field-effect semiconductor device |
US8912059B2 (en) | 2012-09-20 | 2014-12-16 | International Business Machines Corporation | Middle of-line borderless contact structure and method of forming |
US9583574B2 (en) * | 2012-09-28 | 2017-02-28 | Intel Corporation | Epitaxial buffer layers for group III-N transistors on silicon substrates |
US8835237B2 (en) | 2012-11-07 | 2014-09-16 | International Business Machines Corporation | Robust replacement gate integration |
CN103855001A (zh) * | 2012-12-04 | 2014-06-11 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其制造方法 |
US9373706B2 (en) | 2014-01-24 | 2016-06-21 | Samsung Electronics Co., Ltd. | Methods of forming semiconductor devices, including forming a semiconductor material on a fin, and related semiconductor devices |
WO2017099707A1 (en) * | 2015-12-07 | 2017-06-15 | Intel Corporation | Self-aligned transistor structures enabling ultra-short channel lengths |
CN108292687B (zh) * | 2015-12-24 | 2022-04-26 | 英特尔公司 | 用于ge nmos的低肖特基势垒触点结构 |
TWI681561B (zh) * | 2017-05-23 | 2020-01-01 | 財團法人工業技術研究院 | 氮化鎵電晶體元件之結構及其製造方法 |
US11004958B2 (en) | 2018-10-31 | 2021-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
TWI685968B (zh) | 2018-11-23 | 2020-02-21 | 財團法人工業技術研究院 | 增強型氮化鎵電晶體元件及其製造方法 |
US11127820B2 (en) * | 2019-09-20 | 2021-09-21 | Microsoft Technology Licensing, Llc | Quantum well field-effect transistor and method for manufacturing the same |
JP7456449B2 (ja) * | 2019-11-29 | 2024-03-27 | 日本電信電話株式会社 | 電界効果型トランジスタの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02202029A (ja) * | 1989-01-31 | 1990-08-10 | Sony Corp | 化合物半導体装置 |
JPH0521468A (ja) * | 1991-07-17 | 1993-01-29 | Sumitomo Electric Ind Ltd | 電界効果トランジスタの製造方法 |
US5489539A (en) * | 1994-01-10 | 1996-02-06 | Hughes Aircraft Company | Method of making quantum well structure with self-aligned gate |
US5929467A (en) * | 1996-12-04 | 1999-07-27 | Sony Corporation | Field effect transistor with nitride compound |
US6144048A (en) * | 1998-01-13 | 2000-11-07 | Nippon Telegraph And Telephone Corporation | Heterojunction field effect transistor and method of fabricating the same |
US6278165B1 (en) * | 1998-06-29 | 2001-08-21 | Kabushiki Kaisha Toshiba | MIS transistor having a large driving current and method for producing the same |
US6232159B1 (en) * | 1998-07-22 | 2001-05-15 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating compound semiconductor device |
JP2000349280A (ja) * | 1999-06-03 | 2000-12-15 | Nec Corp | 半導体装置及びその製造方法並びに半導体基板構造 |
JP3762588B2 (ja) * | 1999-10-05 | 2006-04-05 | 富士通株式会社 | 半導体装置の製造方法 |
JP3371871B2 (ja) * | 1999-11-16 | 2003-01-27 | 日本電気株式会社 | 半導体装置の製造方法 |
US6498360B1 (en) * | 2000-02-29 | 2002-12-24 | University Of Connecticut | Coupled-well structure for transport channel in field effect transistors |
KR100350056B1 (ko) * | 2000-03-09 | 2002-08-24 | 삼성전자 주식회사 | 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법 |
GB2362506A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Field effect transistor with an InSb quantum well and minority carrier extraction |
KR100379619B1 (ko) * | 2000-10-13 | 2003-04-10 | 광주과학기술원 | 단일집적 e/d 모드 hemt 및 그 제조방법 |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
US6900467B2 (en) * | 2001-05-21 | 2005-05-31 | Stanley Electric Co., Ltd. | Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers |
WO2004019415A1 (en) * | 2002-08-26 | 2004-03-04 | University Of Florida | GaN-TYPE ENHANCEMENT MOSFET USING HETERO STRUCTURE |
US6949761B2 (en) * | 2003-10-14 | 2005-09-27 | International Business Machines Corporation | Structure for and method of fabricating a high-mobility field-effect transistor |
-
2005
- 2005-01-03 US US11/028,378 patent/US20060148182A1/en not_active Abandoned
-
2006
- 2006-01-03 WO PCT/US2006/000138 patent/WO2006074197A1/en active Application Filing
- 2006-01-03 GB GB0714638A patent/GB2438331B/en not_active Expired - Fee Related
- 2006-01-03 TW TW095100171A patent/TWI310990B/zh not_active IP Right Cessation
- 2006-01-03 CN CN2006800068402A patent/CN101133498B/zh not_active Expired - Fee Related
- 2006-01-03 DE DE112006000133T patent/DE112006000133T5/de not_active Ceased
- 2006-01-03 KR KR1020077017824A patent/KR100948211B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB0714638D0 (en) | 2007-09-05 |
GB2438331A (en) | 2007-11-21 |
KR20070088817A (ko) | 2007-08-29 |
DE112006000133T5 (de) | 2008-04-30 |
TW200636998A (en) | 2006-10-16 |
US20060148182A1 (en) | 2006-07-06 |
GB2438331B (en) | 2010-10-13 |
CN101133498B (zh) | 2013-03-27 |
CN101133498A (zh) | 2008-02-27 |
WO2006074197A1 (en) | 2006-07-13 |
KR100948211B1 (ko) | 2010-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI310990B (en) | Quantum well transistor using high dielectric constant dielectric layer | |
US10971406B2 (en) | Method of forming source/drain regions of transistors | |
KR101021736B1 (ko) | 쇼트키 장벽 양자 우물 공명 터널링 트랜지스터 | |
US10573746B2 (en) | VTFET devices utilizing low temperature selective epitaxy | |
JP5669954B2 (ja) | 高K/金属ゲートMOSFETを有するVt調整及び短チャネル制御のための構造体及び方法。 | |
TWI241718B (en) | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication | |
TWI660509B (zh) | Channel field effect transistor and switching element | |
US7498229B1 (en) | Transistor and in-situ fabrication process | |
JP5571193B2 (ja) | 量子井戸型半導体装置 | |
US9059267B1 (en) | III-V device with overlapped extension regions using replacement gate | |
CN107093556A (zh) | 半导体装置的形成方法与n型通道的半导体场效晶体管 | |
US20220149172A1 (en) | Gate-all-around device | |
US20110233689A1 (en) | Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate | |
TW201727892A (zh) | 用於iii-v族奈米線穿隧fet之方法及結構 | |
US9570403B2 (en) | Secure chip with physically unclonable function | |
US20180122908A1 (en) | Silicon germanium alloy fin with multiple threshold voltages | |
US7208803B2 (en) | Method of forming a raised source/drain and a semiconductor device employing the same | |
US9419102B1 (en) | Method to reduce parasitic gate capacitance and structure for same | |
US11011517B2 (en) | Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications | |
KR100839752B1 (ko) | 자기정렬 에피성장층을 채널로 이용하는 반도체 소자구조의 제조방법 | |
TWI553741B (zh) | 用於製造半導體裝置之程序及用於製造半導體裝置之中間產品 | |
TW202005090A (zh) | 穿隧場效電晶體裝置 | |
US20240170538A1 (en) | Semiconductor structure with strained nanosheet channel | |
CN113193041A (zh) | 一种锑化物量子阱cmos器件的结构及其制备方法 | |
Caymax et al. | Epitaxy of III–V based channels on Si and transistor integration for 12-10nm node CMOS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |