CN102254824B - 半导体器件及其形成方法 - Google Patents
半导体器件及其形成方法 Download PDFInfo
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- CN102254824B CN102254824B CN 201010185012 CN201010185012A CN102254824B CN 102254824 B CN102254824 B CN 102254824B CN 201010185012 CN201010185012 CN 201010185012 CN 201010185012 A CN201010185012 A CN 201010185012A CN 102254824 B CN102254824 B CN 102254824B
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CN102254824A CN102254824A (zh) | 2011-11-23 |
CN102254824B true CN102254824B (zh) | 2013-10-02 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103390556B (zh) * | 2012-05-08 | 2016-09-21 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN103456633B (zh) * | 2012-05-30 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | Mos管及其形成方法 |
US9583342B2 (en) * | 2014-07-24 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET doping methods and structures thereof |
US9761720B2 (en) * | 2015-11-30 | 2017-09-12 | Globalfoundries Inc. | Replacement body FinFET for improved junction profile with gate self-aligned junctions |
US10923492B2 (en) * | 2017-04-24 | 2021-02-16 | Micron Technology, Inc. | Elevationally-extending string of memory cells and methods of forming an elevationally-extending string of memory cells |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6566734B2 (en) * | 2000-09-22 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US6660598B2 (en) * | 2002-02-26 | 2003-12-09 | International Business Machines Corporation | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region |
KR20040060119A (ko) * | 2002-12-30 | 2004-07-06 | 동부전자 주식회사 | 반도체 소자 제조방법 |
CN1753188A (zh) * | 2004-09-20 | 2006-03-29 | 国际商业机器公司 | 半导体结构及其形成方法 |
CN101133498A (zh) * | 2005-01-03 | 2008-02-27 | 英特尔公司 | 使用高介电常数电介质层的量子阱晶体管 |
-
2010
- 2010-05-20 CN CN 201010185012 patent/CN102254824B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6566734B2 (en) * | 2000-09-22 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US6660598B2 (en) * | 2002-02-26 | 2003-12-09 | International Business Machines Corporation | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region |
KR20040060119A (ko) * | 2002-12-30 | 2004-07-06 | 동부전자 주식회사 | 반도체 소자 제조방법 |
CN1753188A (zh) * | 2004-09-20 | 2006-03-29 | 国际商业机器公司 | 半导体结构及其形成方法 |
CN101133498A (zh) * | 2005-01-03 | 2008-02-27 | 英特尔公司 | 使用高介电常数电介质层的量子阱晶体管 |
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Address after: 100020 West eight rooms, dongzhimenwai, Chaoyang District, Beijing Patentee after: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. Address before: 100015 Beijing city Chaoyang District Dongzhimen West eight room Wanhong No. 2 West Street Patentee before: BEIJING YANDONG MICROELECTRONIC Co.,Ltd. |
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