TWI308374B - Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits - Google Patents
Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits Download PDFInfo
- Publication number
- TWI308374B TWI308374B TW092119912A TW92119912A TWI308374B TW I308374 B TWI308374 B TW I308374B TW 092119912 A TW092119912 A TW 092119912A TW 92119912 A TW92119912 A TW 92119912A TW I308374 B TWI308374 B TW I308374B
- Authority
- TW
- Taiwan
- Prior art keywords
- opening
- contact
- semiconductor substrate
- depth
- etch
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 3
- 238000004513 sizing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 121
- 239000000758 substrate Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 50
- 238000005530 etching Methods 0.000 claims description 47
- 239000003989 dielectric material Substances 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000009021 linear effect Effects 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 diethyl oxime Chemical class 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/210,995 US6828240B2 (en) | 2002-08-02 | 2002-08-02 | Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200402832A TW200402832A (en) | 2004-02-16 |
| TWI308374B true TWI308374B (en) | 2009-04-01 |
Family
ID=31187481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092119912A TWI308374B (en) | 2002-08-02 | 2003-07-22 | Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6828240B2 (enExample) |
| EP (1) | EP1525612A1 (enExample) |
| JP (1) | JP4936665B2 (enExample) |
| KR (1) | KR100962312B1 (enExample) |
| CN (1) | CN100413050C (enExample) |
| AU (1) | AU2003256458A1 (enExample) |
| TW (1) | TWI308374B (enExample) |
| WO (1) | WO2004013908A1 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8736069B2 (en) | 2012-08-23 | 2014-05-27 | Macronix International Co., Ltd. | Multi-level vertical plug formation with stop layers of increasing thicknesses |
| US8970040B1 (en) | 2013-09-26 | 2015-03-03 | Macronix International Co., Ltd. | Contact structure and forming method |
| US8987914B2 (en) | 2013-02-07 | 2015-03-24 | Macronix International Co., Ltd. | Conductor structure and method |
| US8993429B2 (en) | 2013-03-12 | 2015-03-31 | Macronix International Co., Ltd. | Interlayer conductor structure and method |
| US9070447B2 (en) | 2013-09-26 | 2015-06-30 | Macronix International Co., Ltd. | Contact structure and forming method |
| US9343322B2 (en) | 2014-01-17 | 2016-05-17 | Macronix International Co., Ltd. | Three dimensional stacking memory film structure |
| US9721964B2 (en) | 2014-06-05 | 2017-08-01 | Macronix International Co., Ltd. | Low dielectric constant insulating material in 3D memory |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7504340B1 (en) * | 2004-06-14 | 2009-03-17 | National Semiconductor Corporation | System and method for providing contact etch selectivity using RIE lag dependence on contact aspect ratio |
| US7232762B2 (en) * | 2004-06-16 | 2007-06-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an improved low power SRAM contact |
| KR100614773B1 (ko) * | 2004-12-28 | 2006-08-22 | 삼성전자주식회사 | 화학 기계적 연마 방법 |
| US7470630B1 (en) * | 2005-04-14 | 2008-12-30 | Altera Corporation | Approach to reduce parasitic capacitance from dummy fill |
| US7838203B1 (en) | 2006-11-13 | 2010-11-23 | National Semiconductor Corporation | System and method for providing process compliant layout optimization using optical proximity correction to improve CMOS compatible non volatile memory retention reliability |
| US20080113483A1 (en) * | 2006-11-15 | 2008-05-15 | Micron Technology, Inc. | Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures |
| US7629255B2 (en) * | 2007-06-04 | 2009-12-08 | Lam Research Corporation | Method for reducing microloading in etching high aspect ratio structures |
| US7855146B1 (en) | 2007-09-18 | 2010-12-21 | National Semiconductor Corporation | Photo-focus modulation method for forming transistor gates and related transistor devices |
| US20090221144A1 (en) * | 2008-03-03 | 2009-09-03 | National Applied Research Laboratories | Manufacturing method for nano scale Ge metal structure |
| US7790491B1 (en) | 2008-05-07 | 2010-09-07 | National Semiconductor Corporation | Method for forming non-volatile memory cells and related apparatus and system |
| US7786017B1 (en) | 2009-09-17 | 2010-08-31 | International Business Machines Corporation | Utilizing inverse reactive ion etching lag in double patterning contact formation |
| US9343463B2 (en) * | 2009-09-29 | 2016-05-17 | Headway Technologies, Inc. | Method of high density memory fabrication |
| US8227339B2 (en) * | 2009-11-02 | 2012-07-24 | International Business Machines Corporation | Creation of vias and trenches with different depths |
| US9214351B2 (en) | 2013-03-12 | 2015-12-15 | Macronix International Co., Ltd. | Memory architecture of thin film 3D array |
| US9117526B2 (en) | 2013-07-08 | 2015-08-25 | Macronix International Co., Ltd. | Substrate connection of three dimensional NAND for improving erase performance |
| US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
| US9356040B2 (en) | 2014-06-27 | 2016-05-31 | Macronix International Co., Ltd. | Junction formation for vertical gate 3D NAND memory |
| TWI566365B (zh) * | 2014-07-07 | 2017-01-11 | 旺宏電子股份有限公司 | 接觸結構及形成方法以及應用其之回路 |
| US9379129B1 (en) | 2015-04-13 | 2016-06-28 | Macronix International Co., Ltd. | Assist gate structures for three-dimensional (3D) vertical gate array memory structure |
| US9478259B1 (en) | 2015-05-05 | 2016-10-25 | Macronix International Co., Ltd. | 3D voltage switching transistors for 3D vertical gate memory array |
| US9425209B1 (en) | 2015-09-04 | 2016-08-23 | Macronix International Co., Ltd. | Multilayer 3-D structure with mirror image landing regions |
| US20170213885A1 (en) * | 2016-01-21 | 2017-07-27 | Micron Technology, Inc. | Semiconductor structure and fabricating method thereof |
| US11031279B2 (en) * | 2016-12-14 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with reduced trench loading effect |
| DE102018122473B4 (de) * | 2017-09-29 | 2025-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Herstellungsverfahren für eine Halbleitervorrichtung |
| US10571758B2 (en) * | 2018-01-05 | 2020-02-25 | Innolux Corporation | Display device |
| CN110970297B (zh) * | 2018-09-29 | 2024-06-07 | 长鑫存储技术有限公司 | 补偿性蚀刻方法及结构、半导体器件及其制备方法 |
| KR102783919B1 (ko) | 2019-03-19 | 2025-03-24 | 삼성전자주식회사 | 반도체 소자 |
| CN110767629B (zh) * | 2019-10-30 | 2021-07-06 | 中国科学院微电子研究所 | 用于测量不同材料的蚀刻选择比的结构及方法 |
| US11600628B2 (en) * | 2020-01-15 | 2023-03-07 | Globalfoundries U.S. Inc. | Floating gate memory cell and memory array structure |
| WO2023028825A1 (zh) * | 2021-08-31 | 2023-03-09 | 长江存储科技有限责任公司 | 一种半导体器件及其制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121369A (ja) | 1991-10-24 | 1993-05-18 | Oki Electric Ind Co Ltd | 半導体装置のコンタクトホールエツチング方法 |
| JPH05267251A (ja) * | 1992-03-18 | 1993-10-15 | Oki Electric Ind Co Ltd | 半導体装置におけるコンタクトホールの形成方法 |
| JP3086747B2 (ja) * | 1992-05-07 | 2000-09-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH08316320A (ja) * | 1995-05-22 | 1996-11-29 | Nec Corp | 半導体装置の製造方法 |
| US5814547A (en) * | 1997-10-06 | 1998-09-29 | Industrial Technology Research Institute | Forming different depth trenches simultaneously by microloading effect |
| KR100265596B1 (ko) * | 1997-10-27 | 2000-10-02 | 김영환 | 반도체 소자의 제조방법 |
| US5994780A (en) * | 1997-12-16 | 1999-11-30 | Advanced Micro Devices, Inc. | Semiconductor device with multiple contact sizes |
| JP2001044441A (ja) * | 1999-07-29 | 2001-02-16 | Sony Corp | 完全空乏ｓｏｉ型半導体装置及び集積回路 |
| US6207534B1 (en) * | 1999-09-03 | 2001-03-27 | Chartered Semiconductor Manufacturing Ltd. | Method to form narrow and wide shallow trench isolations with different trench depths to eliminate isolation oxide dishing |
| US6211059B1 (en) * | 1999-10-29 | 2001-04-03 | Nec Corporation | Method of manufacturing semiconductor device having contacts with different depths |
| US6380087B1 (en) * | 2000-06-19 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | CMP process utilizing dummy plugs in damascene process |
| DE10054109C2 (de) * | 2000-10-31 | 2003-07-10 | Advanced Micro Devices Inc | Verfahren zum Bilden eines Substratkontakts in einem Feldeffekttransistor, der über einer vergrabenen Isolierschicht gebildet ist |
| US6294423B1 (en) * | 2000-11-21 | 2001-09-25 | Infineon Technologies North America Corp. | Method for forming and filling isolation trenches |
| US6566191B2 (en) * | 2000-12-05 | 2003-05-20 | International Business Machines Corporation | Forming electronic structures having dual dielectric thicknesses and the structure so formed |
-
2002
- 2002-08-02 US US10/210,995 patent/US6828240B2/en not_active Expired - Lifetime
-
2003
- 2003-07-09 CN CNB038182572A patent/CN100413050C/zh not_active Expired - Lifetime
- 2003-07-09 EP EP03766843A patent/EP1525612A1/en not_active Withdrawn
- 2003-07-09 AU AU2003256458A patent/AU2003256458A1/en not_active Abandoned
- 2003-07-09 JP JP2004526030A patent/JP4936665B2/ja not_active Expired - Lifetime
- 2003-07-09 WO PCT/US2003/021282 patent/WO2004013908A1/en not_active Ceased
- 2003-07-09 KR KR1020057001937A patent/KR100962312B1/ko not_active Expired - Lifetime
- 2003-07-22 TW TW092119912A patent/TWI308374B/zh not_active IP Right Cessation
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8736069B2 (en) | 2012-08-23 | 2014-05-27 | Macronix International Co., Ltd. | Multi-level vertical plug formation with stop layers of increasing thicknesses |
| US8987914B2 (en) | 2013-02-07 | 2015-03-24 | Macronix International Co., Ltd. | Conductor structure and method |
| US9252156B2 (en) | 2013-02-07 | 2016-02-02 | Macronix International Co., Ltd. | Conductor structure and method |
| US8993429B2 (en) | 2013-03-12 | 2015-03-31 | Macronix International Co., Ltd. | Interlayer conductor structure and method |
| US8970040B1 (en) | 2013-09-26 | 2015-03-03 | Macronix International Co., Ltd. | Contact structure and forming method |
| US9070447B2 (en) | 2013-09-26 | 2015-06-30 | Macronix International Co., Ltd. | Contact structure and forming method |
| US9276009B2 (en) | 2013-09-26 | 2016-03-01 | Macronix International Co., Ltd. | NAND-connected string of transistors having the electrical channel in a direction perpendicular to a surface of the substrate |
| US9343322B2 (en) | 2014-01-17 | 2016-05-17 | Macronix International Co., Ltd. | Three dimensional stacking memory film structure |
| US9721964B2 (en) | 2014-06-05 | 2017-08-01 | Macronix International Co., Ltd. | Low dielectric constant insulating material in 3D memory |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003256458A1 (en) | 2004-02-23 |
| EP1525612A1 (en) | 2005-04-27 |
| KR20050039840A (ko) | 2005-04-29 |
| WO2004013908A1 (en) | 2004-02-12 |
| US20040023499A1 (en) | 2004-02-05 |
| JP4936665B2 (ja) | 2012-05-23 |
| KR100962312B1 (ko) | 2010-06-10 |
| TW200402832A (en) | 2004-02-16 |
| CN100413050C (zh) | 2008-08-20 |
| CN1672256A (zh) | 2005-09-21 |
| US6828240B2 (en) | 2004-12-07 |
| JP2005535124A (ja) | 2005-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |