TWI294142B - Microswitching element - Google Patents
Microswitching element Download PDFInfo
- Publication number
- TWI294142B TWI294142B TW094132123A TW94132123A TWI294142B TW I294142 B TWI294142 B TW I294142B TW 094132123 A TW094132123 A TW 094132123A TW 94132123 A TW94132123 A TW 94132123A TW I294142 B TWI294142 B TW I294142B
- Authority
- TW
- Taiwan
- Prior art keywords
- micro
- fixed
- moving
- switching element
- electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 42
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000003780 insertion Methods 0.000 description 16
- 230000037431 insertion Effects 0.000 description 16
- 239000002904 solvent Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 13
- 239000007787 solid Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
- 239000000470 constituent Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 229910000510 noble metal Inorganic materials 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 230000036647 reaction Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000000352 supercritical drying Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- -1 genus Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 208000031361 Hiccup Diseases 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Manufacture Of Switches (AREA)
- Thermally Actuated Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005023388A JP4417861B2 (ja) | 2005-01-31 | 2005-01-31 | マイクロスイッチング素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200627526A TW200627526A (en) | 2006-08-01 |
| TWI294142B true TWI294142B (en) | 2008-03-01 |
Family
ID=36815096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094132123A TWI294142B (en) | 2005-01-31 | 2005-09-16 | Microswitching element |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7535326B2 (ja) |
| JP (1) | JP4417861B2 (ja) |
| KR (1) | KR100681780B1 (ja) |
| CN (1) | CN100492575C (ja) |
| TW (1) | TWI294142B (ja) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101188438B1 (ko) * | 2006-02-20 | 2012-10-08 | 삼성전자주식회사 | 하향형 멤스 스위치의 제조방법 및 하향형 멤스 스위치 |
| JP4855233B2 (ja) * | 2006-12-07 | 2012-01-18 | 富士通株式会社 | マイクロスイッチング素子およびマイクロスイッチング素子製造方法 |
| JP4739173B2 (ja) * | 2006-12-07 | 2011-08-03 | 富士通株式会社 | マイクロスイッチング素子 |
| JP4879760B2 (ja) * | 2007-01-18 | 2012-02-22 | 富士通株式会社 | マイクロスイッチング素子およびマイクロスイッチング素子製造方法 |
| JP4932506B2 (ja) * | 2007-01-19 | 2012-05-16 | 富士通株式会社 | マイクロスイッチング素子 |
| US20100263999A1 (en) * | 2007-12-13 | 2010-10-21 | Dimitrios Peroulis | Low-cost process-independent rf mems switch |
| JP5118546B2 (ja) * | 2008-04-25 | 2013-01-16 | 太陽誘電株式会社 | 電気式微小機械スイッチ |
| JP5314932B2 (ja) * | 2008-05-26 | 2013-10-16 | 太陽誘電株式会社 | 電気式微少機械スイッチ |
| US8373609B1 (en) | 2008-06-10 | 2013-02-12 | The United States Of America, As Represented By The Secretary Of The Navy | Perturbed square ring slot antenna with reconfigurable polarization |
| JP5176148B2 (ja) * | 2008-10-31 | 2013-04-03 | 富士通株式会社 | スイッチング素子および通信機器 |
| JP5187441B2 (ja) * | 2009-04-24 | 2013-04-24 | 株式会社村田製作所 | Ｍｅｍｓ素子およびその製造方法 |
| JP5333182B2 (ja) * | 2009-12-03 | 2013-11-06 | 富士通株式会社 | 電子デバイス |
| JP5506031B2 (ja) * | 2009-12-28 | 2014-05-28 | 富士フイルム株式会社 | アクチュエータ素子の駆動方法、及びデバイス検査方法 |
| JP5506035B2 (ja) | 2010-02-23 | 2014-05-28 | 富士フイルム株式会社 | アクチュエータの製造方法 |
| US20140202837A1 (en) * | 2010-06-14 | 2014-07-24 | Purdue Research Foundation | Low-cost process-independent rf mems switch |
| EP2639809A4 (en) * | 2010-11-10 | 2014-11-26 | Tyco Electronics Japan G K | CONTACT STRUCTURE |
| JP5621616B2 (ja) * | 2011-01-21 | 2014-11-12 | 富士通株式会社 | Ｍｅｍｓスイッチおよびその製造方法 |
| TWI481205B (zh) | 2013-01-21 | 2015-04-11 | Wistron Neweb Corp | 微帶天線收發器 |
| WO2015112796A1 (en) * | 2014-01-23 | 2015-07-30 | The Florida State University Research Foundation, Inc. | Ultrafast electromechanical disconnect switch |
| TWI563804B (en) * | 2015-01-21 | 2016-12-21 | Wistron Neweb Corp | Microstrip antenna transceiver |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578976A (en) | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
| US6238946B1 (en) * | 1999-08-17 | 2001-05-29 | International Business Machines Corporation | Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing |
| US6307452B1 (en) | 1999-09-16 | 2001-10-23 | Motorola, Inc. | Folded spring based micro electromechanical (MEM) RF switch |
| DE10004393C1 (de) * | 2000-02-02 | 2002-02-14 | Infineon Technologies Ag | Mikrorelais |
| US7123119B2 (en) * | 2002-08-03 | 2006-10-17 | Siverta, Inc. | Sealed integral MEMS switch |
| KR100492004B1 (ko) * | 2002-11-01 | 2005-05-30 | 한국전자통신연구원 | 미세전자기계적 시스템 기술을 이용한 고주파 소자 |
| KR20050076149A (ko) * | 2004-01-19 | 2005-07-26 | 엘지전자 주식회사 | 압전 구동형 알에프 미세기전 시스템 스위치 및 그 제조방법 |
-
2005
- 2005-01-31 JP JP2005023388A patent/JP4417861B2/ja active Active
- 2005-09-16 TW TW094132123A patent/TWI294142B/zh active
- 2005-10-05 KR KR1020050093283A patent/KR100681780B1/ko active IP Right Grant
- 2005-10-07 US US11/245,007 patent/US7535326B2/en active Active
- 2005-10-12 CN CNB2005101085741A patent/CN100492575C/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200627526A (en) | 2006-08-01 |
| KR20060088001A (ko) | 2006-08-03 |
| US7535326B2 (en) | 2009-05-19 |
| CN1815657A (zh) | 2006-08-09 |
| CN100492575C (zh) | 2009-05-27 |
| KR100681780B1 (ko) | 2007-02-12 |
| JP4417861B2 (ja) | 2010-02-17 |
| US20060181375A1 (en) | 2006-08-17 |
| JP2006210250A (ja) | 2006-08-10 |
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