TWI293487B - - Google Patents

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Publication number
TWI293487B
TWI293487B TW92113799A TW92113799A TWI293487B TW I293487 B TWI293487 B TW I293487B TW 92113799 A TW92113799 A TW 92113799A TW 92113799 A TW92113799 A TW 92113799A TW I293487 B TWI293487 B TW I293487B
Authority
TW
Taiwan
Prior art keywords
wire
lead
patent application
starting ball
discharge
Prior art date
Application number
TW92113799A
Other languages
English (en)
Chinese (zh)
Other versions
TW200400574A (en
Inventor
Shinichi Nishiura
Fumio Miyano
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Publication of TW200400574A publication Critical patent/TW200400574A/zh
Application granted granted Critical
Publication of TWI293487B publication Critical patent/TWI293487B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/85009—Pre-treatment of the connector or the bonding area
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    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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    • H01L2924/013—Alloys
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
TW92113799A 2002-06-26 2003-05-22 Initial ball forming method of wire bonding lead and wire bonding apparatus TW200400574A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002186731A JP3727615B2 (ja) 2002-06-26 2002-06-26 ワイヤボンディング用ワイヤのイニシャルボール形成方法およびワイヤボンディング装置

Publications (2)

Publication Number Publication Date
TW200400574A TW200400574A (en) 2004-01-01
TWI293487B true TWI293487B (enExample) 2008-02-11

Family

ID=29774144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92113799A TW200400574A (en) 2002-06-26 2003-05-22 Initial ball forming method of wire bonding lead and wire bonding apparatus

Country Status (4)

Country Link
US (1) US7299966B2 (enExample)
JP (1) JP3727615B2 (enExample)
KR (1) KR100558143B1 (enExample)
TW (1) TW200400574A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3727615B2 (ja) * 2002-06-26 2005-12-14 株式会社新川 ワイヤボンディング用ワイヤのイニシャルボール形成方法およびワイヤボンディング装置
JP3704328B2 (ja) * 2002-06-26 2005-10-12 株式会社新川 ワイヤボンディング用ワイヤのイニシャルボール形成方法およびワイヤボンディング装置
CN1328774C (zh) * 2005-01-12 2007-07-25 哈尔滨工业大学 双电热丝熔切法锡球制备机
SG156688A1 (en) * 2006-05-09 2009-11-26 Asm Tech Singapore Pte Ltd Wire bonding process for insulated wires
US20080185737A1 (en) * 2007-02-02 2008-08-07 Pandi Chelvam Marimuthu Integrated circuit system with pre-configured bond wire ball
AT507228B1 (de) * 2008-07-30 2010-08-15 Fronius Int Gmbh Verfahren und vorrichtung zur formung des schweissdrahtendes
JP5077278B2 (ja) * 2009-04-06 2012-11-21 株式会社デンソー ワイヤボンディング方法
CN102569111A (zh) * 2011-12-27 2012-07-11 三星半导体(中国)研究开发有限公司 用于引线键合的压板
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