SG137756A1 - Wire bonding process for insulated wires - Google Patents

Wire bonding process for insulated wires

Info

Publication number
SG137756A1
SG137756A1 SG200703271-7A SG2007032717A SG137756A1 SG 137756 A1 SG137756 A1 SG 137756A1 SG 2007032717 A SG2007032717 A SG 2007032717A SG 137756 A1 SG137756 A1 SG 137756A1
Authority
SG
Singapore
Prior art keywords
ball
insulated wires
wire bonding
bonding process
electric discharge
Prior art date
Application number
SG200703271-7A
Inventor
Ramkumar Malliah
Lim Loon Aik
Iii Charles J Vath
Carr Christopher
Lyn Robert
Persic John
Song Young-Kyu
Original Assignee
Asm Tech Singapore Pte Ltd
Microbonds Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Tech Singapore Pte Ltd, Microbonds Inc filed Critical Asm Tech Singapore Pte Ltd
Publication of SG137756A1 publication Critical patent/SG137756A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • H—ELECTRICITY
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A process for bonding insulated wires is provided wherein a conforming free air ball is formed from an insulated wire to create a ball bond. A tip of the insulated wire is first positioned close to an electronic flame-off device and a first electric discharge is produced from the electronic flame-off device to melt the tip of the insulated wire and produce a pilot ball. The electric discharge is then terminated. A second electric discharge is then generated to produce the conforming free air ball, and thereafter, the conforming free air ball is attached to a bonding surface to create the ball bond.
SG200703271-7A 2006-05-09 2007-05-07 Wire bonding process for insulated wires SG137756A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79905606P 2006-05-09 2006-05-09

Publications (1)

Publication Number Publication Date
SG137756A1 true SG137756A1 (en) 2007-12-28

Family

ID=38839611

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200703271-7A SG137756A1 (en) 2006-05-09 2007-05-07 Wire bonding process for insulated wires
SG200907162-2A SG156688A1 (en) 2006-05-09 2007-05-07 Wire bonding process for insulated wires

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200907162-2A SG156688A1 (en) 2006-05-09 2007-05-07 Wire bonding process for insulated wires

Country Status (3)

Country Link
JP (1) JP2007305997A (en)
KR (1) KR100904745B1 (en)
SG (2) SG137756A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI528481B (en) * 2014-02-13 2016-04-01 新川股份有限公司 Ball forming device, wire bonding device and ball forming method
SG10201606515VA (en) * 2016-08-05 2018-03-28 Heraeus Materials Singapore Pte Ltd Process for electrically connecting the contact surfaces of electronic components by a bonding wire having an electrically insulating coating

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442831A (en) * 1987-08-10 1989-02-15 Hitachi Ltd Semiconductor device
JP2506152B2 (en) * 1988-06-21 1996-06-12 株式会社日立製作所 Wire bonding method for coated wire
JPH0828388B2 (en) * 1990-11-21 1996-03-21 三菱マテリアル株式会社 Wire bonding equipment
JP3309764B2 (en) * 1997-04-25 2002-07-29 松下電器産業株式会社 Wire bonding method
JP3727615B2 (en) * 2002-06-26 2005-12-14 株式会社新川 Wire bonding wire initial ball forming method and wire bonding apparatus
JP3704328B2 (en) * 2002-06-26 2005-10-12 株式会社新川 Wire bonding wire initial ball forming method and wire bonding apparatus

Also Published As

Publication number Publication date
KR20070110196A (en) 2007-11-16
KR100904745B1 (en) 2009-06-29
JP2007305997A (en) 2007-11-22
SG156688A1 (en) 2009-11-26

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