TWI284001B - Cesium dispensers and process for the use thereof - Google Patents

Cesium dispensers and process for the use thereof Download PDF

Info

Publication number
TWI284001B
TWI284001B TW091108362A TW91108362A TWI284001B TW I284001 B TWI284001 B TW I284001B TW 091108362 A TW091108362 A TW 091108362A TW 91108362 A TW91108362 A TW 91108362A TW I284001 B TWI284001 B TW I284001B
Authority
TW
Taiwan
Prior art keywords
planing
planer
adapter
electrodes
container
Prior art date
Application number
TW091108362A
Other languages
English (en)
Chinese (zh)
Inventor
Claudio Boffito
Luca Toia
Lorena Cattaneo
Original Assignee
Getters Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Getters Spa filed Critical Getters Spa
Application granted granted Critical
Publication of TWI284001B publication Critical patent/TWI284001B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Luminescent Compositions (AREA)
  • Compounds Of Unknown Constitution (AREA)
  • Laminated Bodies (AREA)
  • Catalysts (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Drying Of Gases (AREA)
TW091108362A 2001-05-15 2002-04-23 Cesium dispensers and process for the use thereof TWI284001B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001MI000995A ITMI20010995A1 (it) 2001-05-15 2001-05-15 Dispensatori di cesio e processo per il loro uso

Publications (1)

Publication Number Publication Date
TWI284001B true TWI284001B (en) 2007-07-11

Family

ID=11447659

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091108362A TWI284001B (en) 2001-05-15 2002-04-23 Cesium dispensers and process for the use thereof

Country Status (13)

Country Link
US (2) US6753648B2 (https=)
EP (1) EP1419542B1 (https=)
JP (1) JP4087715B2 (https=)
KR (1) KR100742424B1 (https=)
CN (1) CN100459219C (https=)
AT (1) ATE322744T1 (https=)
AU (1) AU2002309256A1 (https=)
CA (1) CA2430941C (https=)
DE (1) DE60210478T2 (https=)
IT (1) ITMI20010995A1 (https=)
MY (1) MY132034A (https=)
TW (1) TWI284001B (https=)
WO (1) WO2002093664A2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20010995A1 (it) * 2001-05-15 2002-11-15 Getters Spa Dispensatori di cesio e processo per il loro uso
KR100572942B1 (ko) 2001-05-17 2006-04-25 다이킨 고교 가부시키가이샤 불소 함유 중합체를 포함하는 비선형 광학 재료
ITMI20021904A1 (it) * 2002-09-06 2004-03-07 Getters Spa Elemento accessorio per dispensatori di metalli alcalini
EP1521286A4 (en) 2003-01-17 2006-12-13 Hamamatsu Photonics Kk ALKALI METAL GENERATING AGENT, ALKALI METAL GENERATOR, PHOTOELECTRIC SURFACE, SECONDARY ELECTRON EMITTING SURFACE, ELECTRONIC TUBE, PHOTOELECTRIC SURFACE MANUFACTURING METHOD, SECONDARY ELECTRON EMISSION SURFACE MANUFACTURING METHOD, AND METHOD OF MANUFACTURING THE SAME
EP1585159A4 (en) * 2003-01-17 2006-12-13 Hamamatsu Photonics Kk ALKALI METAL PRODUCTION AGENTS, ALKALI METAL PRODUCERS, PHOTOELECTRIC SURFACE, ELECTRON EMISSION SURFACE SECONDARY, ELECTRON TUBE, METHOD FOR PRODUCING A PHOTO ELECTRIC SURFACE, METHOD FOR PRODUCING A SECONDARY ELECTRON EMISSION SURFACE AND METHOD FOR PRODUCING AN ELECTRON TUBE
CN100521037C (zh) 2003-01-17 2009-07-29 浜松光子学株式会社 碱金属发生剂
JP4312555B2 (ja) * 2003-09-18 2009-08-12 富士フイルム株式会社 真空蒸着用ルツボおよび蛍光体シート製造装置
US7540978B2 (en) 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
ITMI20041736A1 (it) 2004-09-10 2004-12-10 Getters Spa Miscele per l'evaporazione del litio e dispensatori di litio
DE602004006275T2 (de) * 2004-10-07 2007-12-20 Novaled Ag Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium
ITMI20042279A1 (it) * 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
US7625601B2 (en) * 2005-02-04 2009-12-01 Eastman Kodak Company Controllably feeding organic material in making OLEDs
US20060269656A1 (en) * 2005-05-26 2006-11-30 Eastman Kodak Company Reducing contamination in OLED processing systems
DE502005009415D1 (de) 2005-05-27 2010-05-27 Novaled Ag Transparente organische Leuchtdiode
EP1780816B1 (en) 2005-11-01 2020-07-01 Novaled GmbH A method for producing an electronic device with a layer structure and an electronic device
EP1939320B1 (de) 2005-12-07 2013-08-21 Novaled AG Verfahren zum Abscheiden eines Aufdampfmaterials
DE502005004675D1 (de) 2005-12-21 2008-08-21 Novaled Ag Organisches Bauelement
ITMI20060444A1 (it) 2006-03-13 2007-09-14 Getters Spa Uso di composizioni magnesio-rame per l'evaporazione di magnesio e dispensatori di magnesio
JP5683104B2 (ja) 2006-03-21 2015-03-11 ノヴァレッド・アクチエンゲゼルシャフト ドープされた有機半導体材料の製造方法及びそのために用いられる配合物
AT502678B1 (de) 2006-03-24 2007-05-15 Alvatec Alkali Vacuum Technolo Alkalimetall- oder erdalkalimetall- verdampferquelle
DK2526933T3 (en) * 2006-09-22 2015-05-18 Pharmacyclics Inc Inhibitors of Bruton's tyrosine kinase
ITMI20061872A1 (it) * 2006-09-29 2008-03-30 Getters Spa SCHERMO ELETTROLUMINECìSCENTE ORGANICO E PROCESSO PER LA SUA PRODUZIONE
ITMI20070301A1 (it) * 2007-02-16 2008-08-17 Getters Spa Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel
ITMI20112051A1 (it) * 2011-11-11 2013-05-12 Getters Spa Composizione organico-inorganica per il rilascio in fase vapore di metalli alcalini ed alcalino-terrosi
US9491802B2 (en) * 2012-02-17 2016-11-08 Honeywell International Inc. On-chip alkali dispenser
ITMI20131171A1 (it) * 2013-07-11 2015-01-11 Getters Spa Erogatore migliorato di vapori metallici
WO2015097894A1 (ja) * 2013-12-27 2015-07-02 パイオニア株式会社 発光素子及び発光素子の製造方法
CN105483397B (zh) * 2015-11-26 2017-12-26 北京有色金属研究总院 一种低温可控放铯的铯释放剂和其所用释放器的制备方法
USD814314S1 (en) * 2016-10-07 2018-04-03 S.C. Johnson & Son, Inc. Cartridge
USD821224S1 (en) * 2016-10-07 2018-06-26 S. C. Johnson & Son, Inc. Cartridge
CN110444463B (zh) * 2019-08-12 2020-11-10 电子科技大学 一种微电流铯离子源

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2117735A (en) * 1936-10-01 1938-05-17 Rca Corp Getter
US2424512A (en) * 1944-08-08 1947-07-22 Nat Res Corp Production of alkali metals and their oxides
US3096211A (en) * 1959-03-31 1963-07-02 Emi Ltd Alkali metal generators
US3203901A (en) * 1962-02-15 1965-08-31 Porta Paolo Della Method of manufacturing zirconiumaluminum alloy getters
US3579459A (en) * 1966-12-13 1971-05-18 Getters Spa Metal vapor generating compositions
DE1945508B2 (de) * 1968-09-13 1971-06-09 Vorrichtung zum freisetzen von metalldaempfen
GB1274528A (en) * 1968-09-13 1972-05-17 Getters Spa Improvements in or relating to metal vapour generators
US3658713A (en) * 1968-11-12 1972-04-25 Tokyo Shibaura Electric Co Alkali metal generating agents
US3663121A (en) * 1969-05-24 1972-05-16 Getters Spa Generation of metal vapors
US4146497A (en) * 1972-12-14 1979-03-27 S.A.E.S. Getters S.P.A. Supported getter
US4275330A (en) * 1979-03-08 1981-06-23 General Electric Company Electric discharge lamp having a cathode with cesium metal oxide
IT1115156B (it) * 1979-04-06 1986-02-03 Getters Spa Leghe zr-fe per l'assorbimento di idrogeno a basse temperature
US4233936A (en) * 1979-05-08 1980-11-18 Rca Corporation Alkali metal dispenser
AU2993384A (en) * 1983-06-29 1986-01-02 Stauffer Chemical Company Preparation of polyphosphides using potassium graphite intercalate
IT1173866B (it) * 1984-03-16 1987-06-24 Getters Spa Metodo perfezionato per fabbricare dispositivi getter non evarobili porosi e dispositivi getter cosi' prodotti
NL8802171A (nl) * 1988-09-02 1990-04-02 Philips Nv Alkalimetaaldamp-dispenser.
US5606219A (en) * 1992-12-25 1997-02-25 Fuji Photo Film Co., Ltd. Cathode for electronic flash tube
JPH06231727A (ja) * 1993-02-03 1994-08-19 Fuji Photo Film Co Ltd 閃光放電管用陰極材及びその製造方法
DE69434593D1 (de) 1993-08-13 2006-02-02 Uab Res Foundation Birmingham Verfahren und zusammensetzungen zur stimulation und inhibition der aktivität von tgf-beta
JPH0978058A (ja) 1995-09-08 1997-03-25 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
DE69729394T2 (de) 1996-11-29 2005-06-02 Idemitsu Kosan Co. Ltd. Organische elektrolumineszente Vorrichtung
JPH10270171A (ja) * 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
JP3266573B2 (ja) * 1998-04-08 2002-03-18 出光興産株式会社 有機エレクトロルミネッセンス素子
JPH11329347A (ja) * 1998-05-08 1999-11-30 Erebamu:Kk 放電ランプ及びその製造方法
ITMI20010995A1 (it) * 2001-05-15 2002-11-15 Getters Spa Dispensatori di cesio e processo per il loro uso

Also Published As

Publication number Publication date
US20040206205A1 (en) 2004-10-21
CN1531839A (zh) 2004-09-22
KR100742424B1 (ko) 2007-07-24
CN100459219C (zh) 2009-02-04
US6753648B2 (en) 2004-06-22
CA2430941A1 (en) 2002-11-21
JP4087715B2 (ja) 2008-05-21
JP2004532932A (ja) 2004-10-28
WO2002093664A8 (en) 2003-03-06
WO2002093664A2 (en) 2002-11-21
AU2002309256A1 (en) 2002-11-25
EP1419542A2 (en) 2004-05-19
ITMI20010995A0 (it) 2001-05-15
ATE322744T1 (de) 2006-04-15
KR20030038666A (ko) 2003-05-16
HK1068495A1 (zh) 2005-04-29
WO2002093664A3 (en) 2003-02-06
ITMI20010995A1 (it) 2002-11-15
DE60210478T2 (de) 2006-10-05
EP1419542B1 (en) 2006-04-05
MY132034A (en) 2007-09-28
CA2430941C (en) 2009-12-29
DE60210478D1 (de) 2006-05-18
US20040001916A1 (en) 2004-01-01

Similar Documents

Publication Publication Date Title
TWI284001B (en) Cesium dispensers and process for the use thereof
TWI278523B (en) Method for manufacturing porous getter devices with reduced particle loss and devices so manufactured
US7794630B2 (en) Lithium dispenser for lithium evaporation
Zunger Structural stability of 495 binary compounds
TW200831692A (en) Novel manufacturing design and processing methods and apparatus for PVD targets
Koller et al. Band alignment at the organic-inorganic interface
JPS63224127A (ja) 含浸形陰極
Reale Conductivity data for the transition metals derived from considerations on the charge transport in thin films
ITMI20131171A1 (it) Erogatore migliorato di vapori metallici
HK1068495B (en) Cesium dispensers and process for the use thereof
TW202246551A (zh) 次氧化鎢陶瓷靶材
JPS6291500A (ja) 酸化セレンウイスカ−およびその製造方法
JP3297194B2 (ja) 被膜形成フィルムの製造方法
JP2005055338A (ja) 温度センサ素子及びその製造方法
GB2121443A (en) Chemical Vapour Deposition of selectively absorbent layer for use on solar collectors
JPS6324066B2 (https=)
JPH0468779B2 (https=)
Freller et al. Deposition of tungsten-alumina composite films by oxide evaporation
JPS59195529A (ja) 導電性物質
JPH0281401A (ja) 抵抗体
WO1998052210A1 (en) Getter devices for halogen lamps and process for their production
JPH0325824A (ja) 含浸形カソード
Jeyaram et al. Design and development of an eco-friendly chemical vapour deposition reactor for deposition of thin films
JPH02245345A (ja) サーマルヘッド
JPH02205001A (ja) 抵抗体

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent