TWI275565B - Emission source having carbon nanotube, electron microscope using this emission source, and electron beam drawing device - Google Patents
Emission source having carbon nanotube, electron microscope using this emission source, and electron beam drawing device Download PDFInfo
- Publication number
- TWI275565B TWI275565B TW092119556A TW92119556A TWI275565B TW I275565 B TWI275565 B TW I275565B TW 092119556 A TW092119556 A TW 092119556A TW 92119556 A TW92119556 A TW 92119556A TW I275565 B TWI275565 B TW I275565B
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- TW
- Taiwan
- Prior art keywords
- conductive
- electron
- source
- bonding material
- electron source
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 68
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 68
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000011368 organic material Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 42
- 238000002844 melting Methods 0.000 claims description 30
- 230000008018 melting Effects 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000005253 cladding Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 5
- 239000002071 nanotube Substances 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 239000002689 soil Substances 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000001568 sexual effect Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 244000166124 Eucalyptus globulus Species 0.000 claims 1
- 241000283973 Oryctolagus cuniculus Species 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 7
- 230000006378 damage Effects 0.000 abstract description 6
- 230000001133 acceleration Effects 0.000 abstract description 4
- 238000005304 joining Methods 0.000 abstract description 4
- 239000000523 sample Substances 0.000 description 19
- 230000005684 electric field Effects 0.000 description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 230000003197 catalytic effect Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 206010002091 Anaesthesia Diseases 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JYMQFZFDRMIPGC-UHFFFAOYSA-N [C].C1=CC=CC2=CC=CC=C21 Chemical compound [C].C1=CC=CC2=CC=CC=C21 JYMQFZFDRMIPGC-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000001949 anaesthesia Methods 0.000 description 1
- 230000037005 anaesthesia Effects 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910000743 fusible alloy Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
- H01J2237/0635—Multiple source, e.g. comb or array
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/875—Scanning probe structure with tip detail
- Y10S977/876—Nanotube tip
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002234297A JP3832402B2 (ja) | 2002-08-12 | 2002-08-12 | カーボンナノチューブを有する電子源とそれを用いた電子顕微鏡および電子線描画装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200413250A TW200413250A (en) | 2004-08-01 |
| TWI275565B true TWI275565B (en) | 2007-03-11 |
Family
ID=31492446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092119556A TWI275565B (en) | 2002-08-12 | 2003-07-17 | Emission source having carbon nanotube, electron microscope using this emission source, and electron beam drawing device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6930313B2 (enExample) |
| JP (1) | JP3832402B2 (enExample) |
| KR (1) | KR100686294B1 (enExample) |
| TW (1) | TWI275565B (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6528785B1 (en) * | 1998-12-03 | 2003-03-04 | Daiken Chemical Co., Ltd. | Fusion-welded nanotube surface signal probe and method of attaching nanotube to probe holder |
| US7879308B1 (en) * | 2000-03-17 | 2011-02-01 | University Of Central Florida Research Foundation, Inc. | Multiwall carbon nanotube field emitter fabricated by focused ion beam technique |
| ATE514049T1 (de) * | 2002-01-15 | 2011-07-15 | Ibm | Mikrostrukturen |
| JP3797299B2 (ja) * | 2002-08-30 | 2006-07-12 | 石川島播磨重工業株式会社 | 高電圧用カソード及びその接合方法 |
| JP2005032500A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi High-Technologies Corp | 冷陰極とそれを用いた電子源及び電子線装置 |
| JP4317779B2 (ja) | 2004-03-26 | 2009-08-19 | 株式会社日立ハイテクノロジーズ | 電界放出型電子銃およびそれを用いた電子ビーム応用装置 |
| JP2006049293A (ja) * | 2004-06-30 | 2006-02-16 | Hitachi High-Technologies Corp | 電界放出型電子銃およびそれを用いた電子ビーム応用装置 |
| EP1641012A3 (en) * | 2004-09-24 | 2008-12-03 | FEI Company | Electron source with low energy spread |
| JP2006092927A (ja) * | 2004-09-24 | 2006-04-06 | Sony Corp | 微小電子源装置及びその製造方法、平面型表示装置 |
| JP2006093141A (ja) * | 2004-09-24 | 2006-04-06 | Fei Co | 電子源及びその電子源を有する荷電粒子装置 |
| JP2006125846A (ja) * | 2004-10-26 | 2006-05-18 | Olympus Corp | カンチレバー |
| KR100660189B1 (ko) | 2004-11-12 | 2006-12-21 | 한국과학기술원 | 전해에칭을 이용한 나노팁의 접착장치 및 접착방법 |
| CN100530518C (zh) * | 2004-12-25 | 2009-08-19 | 鸿富锦精密工业（深圳）有限公司 | 场发射照明光源 |
| US9287356B2 (en) * | 2005-05-09 | 2016-03-15 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| KR20070014741A (ko) * | 2005-07-29 | 2007-02-01 | 삼성에스디아이 주식회사 | 전자방출원, 그 제조방법 및 이를 채용한 전자 방출 소자 |
| US7735147B2 (en) * | 2005-10-13 | 2010-06-08 | The Regents Of The University Of California | Probe system comprising an electric-field-aligned probe tip and method for fabricating the same |
| KR100792385B1 (ko) | 2005-12-14 | 2008-01-09 | 주식회사 하이닉스반도체 | 나노팁전자방출원, 그의 제조 방법 및 그를 구비한 나노팁리소그래피 장치 |
| US7544523B2 (en) * | 2005-12-23 | 2009-06-09 | Fei Company | Method of fabricating nanodevices |
| US20100258724A1 (en) * | 2005-12-28 | 2010-10-14 | Hitachi High-Technologies Corporation | Tip-sharpened carbon nanotubes and electron source using thereof |
| CN101042977B (zh) * | 2006-03-22 | 2011-12-21 | 清华大学 | 碳纳米管场发射电子源及其制造方法以及一场发射阵列 |
| CN100573783C (zh) * | 2006-04-05 | 2009-12-23 | 清华大学 | 碳纳米管场发射电子源的制造方法 |
| GB2453302B (en) * | 2006-06-30 | 2012-04-18 | Shimadzu Corp | Electron beam generating apparatus and methods of forming an emitter |
| JP2008041289A (ja) * | 2006-08-02 | 2008-02-21 | Hitachi High-Technologies Corp | 電界放出型電子銃およびそれを用いた電子線応用装置 |
| JP2008047309A (ja) * | 2006-08-11 | 2008-02-28 | Hitachi High-Technologies Corp | 電界放出型電子銃、およびその運転方法 |
| US9385065B2 (en) * | 2006-10-02 | 2016-07-05 | The Regents Of The University Of California | Solid state thermal rectifier |
| DE102007010463B4 (de) * | 2007-03-01 | 2010-08-26 | Sellmair, Josef, Dr. | Vorrichtung zur Feldemission von Teilchen |
| US7847273B2 (en) * | 2007-03-30 | 2010-12-07 | Eloret Corporation | Carbon nanotube electron gun |
| KR101118698B1 (ko) * | 2007-05-29 | 2012-03-12 | 전자빔기술센터 주식회사 | 시엔티 팁을 이용한 전자 칼럼 및 시엔티 팁을 정렬하는방법 |
| WO2009044564A1 (ja) * | 2007-10-05 | 2009-04-09 | Denki Kagaku Kogyo Kabushiki Kaisha | 電子源及び電子ビーム装置 |
| JP4589440B2 (ja) * | 2008-02-01 | 2010-12-01 | ツィンファ ユニバーシティ | 線状カーボンナノチューブ構造体 |
| CN101960286A (zh) * | 2008-02-27 | 2011-01-26 | 独立行政法人科学技术振兴机构 | 碳纳米管支持体及其制造方法 |
| JP4644723B2 (ja) * | 2008-03-31 | 2011-03-02 | 株式会社日立ハイテクノロジーズ | ナノチューブ探針を有する測定装置 |
| CN101609771B (zh) * | 2008-06-20 | 2010-12-08 | 清华大学 | 透射电镜微栅的制备方法 |
| JP2010210449A (ja) * | 2009-03-11 | 2010-09-24 | Hitachi High-Technologies Corp | 導電性ナノチューブ探針、それを用いた電気特性評価装置及び走査型プローブ顕微鏡 |
| US8729470B2 (en) * | 2009-06-14 | 2014-05-20 | DLA Instruments | Electron microscope with an emitter operating in medium vacuum |
| WO2011084146A1 (en) * | 2009-12-21 | 2011-07-14 | Dla Instruments, Inc. | Electron microscope with an emitter operating in medium vacuum |
| JP5063715B2 (ja) * | 2010-02-04 | 2012-10-31 | 株式会社日立ハイテクノロジーズ | 電子源，電子銃、それを用いた電子顕微鏡装置及び電子線描画装置 |
| US8766522B1 (en) * | 2010-06-02 | 2014-07-01 | The United States Of America As Represented By The Secretary Of The Air Force | Carbon nanotube fiber cathode |
| FR2965102B1 (fr) * | 2010-09-17 | 2016-12-16 | Centre Nat De La Rech Scient (Cnrs) | Canon a electrons emettant sous haute tension, destine notamment a la microscopie electronique |
| CN103531423A (zh) * | 2013-10-21 | 2014-01-22 | 严建新 | 针状带电粒子束发射体及制作方法 |
| JP6369987B2 (ja) * | 2014-12-03 | 2018-08-08 | 国立研究開発法人物質・材料研究機構 | 電子源 |
| JP6704229B2 (ja) * | 2015-09-14 | 2020-06-03 | リンテック オブ アメリカ インコーポレーテッドＬｉｎｔｅｃ ｏｆ Ａｍｅｒｉｃａ， Ｉｎｃ． | 柔軟性シート、熱伝導部材、導電性部材、帯電防止部材、発熱体、電磁波遮蔽体、及び柔軟性シートの製造方法 |
| CN105712281B (zh) * | 2016-02-18 | 2017-08-04 | 国家纳米科学中心 | 一种锥形纳米碳材料功能化针尖及其制备方法 |
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| JP2019220559A (ja) * | 2018-06-19 | 2019-12-26 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びそのビーム評価方法 |
| CN109490580A (zh) * | 2018-11-09 | 2019-03-19 | 昆明理工大学 | 一种扫描隧道显微镜针尖的热处理装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08250054A (ja) * | 1995-03-14 | 1996-09-27 | Hitachi Ltd | 拡散補給型電子線源およびそれを用いた電子線装置 |
| US6528785B1 (en) * | 1998-12-03 | 2003-03-04 | Daiken Chemical Co., Ltd. | Fusion-welded nanotube surface signal probe and method of attaching nanotube to probe holder |
| JP3811004B2 (ja) * | 2000-11-26 | 2006-08-16 | 喜萬 中山 | 導電性走査型顕微鏡用プローブ |
| JP2002162335A (ja) * | 2000-11-26 | 2002-06-07 | Yoshikazu Nakayama | 垂直式走査型顕微鏡用カンチレバー及びこれを使用した垂直式走査型顕微鏡用プローブ |
| US6700127B2 (en) * | 2002-01-09 | 2004-03-02 | Biomed Solutions Llc | Point source for producing electrons beams |
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| KR100686294B1 (ko) | 2007-02-23 |
| US20040026629A1 (en) | 2004-02-12 |
| JP2004079223A (ja) | 2004-03-11 |
| KR20040014912A (ko) | 2004-02-18 |
| JP3832402B2 (ja) | 2006-10-11 |
| US6930313B2 (en) | 2005-08-16 |
| TW200413250A (en) | 2004-08-01 |
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