TWI270983B - Biased, triple-well fully depleted SOI structure, and various methods of making and operating same - Google Patents
Biased, triple-well fully depleted SOI structure, and various methods of making and operating same Download PDFInfo
- Publication number
- TWI270983B TWI270983B TW092105160A TW92105160A TWI270983B TW I270983 B TWI270983 B TW I270983B TW 092105160 A TW092105160 A TW 092105160A TW 92105160 A TW92105160 A TW 92105160A TW I270983 B TWI270983 B TW I270983B
- Authority
- TW
- Taiwan
- Prior art keywords
- well
- type
- doping
- doped
- implantation process
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 153
- 239000000463 material Substances 0.000 claims abstract description 201
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 230000008569 process Effects 0.000 claims abstract description 99
- 239000002019 doping agent Substances 0.000 claims abstract description 96
- 239000007943 implant Substances 0.000 claims abstract description 42
- 239000012212 insulator Substances 0.000 claims abstract description 36
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 111
- 238000005468 ion implantation Methods 0.000 claims description 53
- 238000002513 implantation Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- -1 ions ions ions Chemical class 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 206010036790 Productive cough Diseases 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 210000003802 sputum Anatomy 0.000 claims description 2
- 208000024794 sputum Diseases 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 4
- 229910052797 bismuth Inorganic materials 0.000 claims 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 241000239226 Scorpiones Species 0.000 claims 1
- 240000008866 Ziziphus nummularia Species 0.000 claims 1
- 239000013590 bulk material Substances 0.000 claims 1
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- 239000012774 insulation material Substances 0.000 claims 1
- 238000000752 ionisation method Methods 0.000 claims 1
- 239000010985 leather Substances 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 7
- 229910001922 gold oxide Inorganic materials 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 241000196324 Embryophyta Species 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- YWCYJWYNSHTONE-UHFFFAOYSA-O oxido(oxonio)boron Chemical compound [OH2+][B][O-] YWCYJWYNSHTONE-UHFFFAOYSA-O 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 101001051799 Aedes aegypti Molybdenum cofactor sulfurase 3 Proteins 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 206010021703 Indifference Diseases 0.000 description 1
- 241000287127 Passeridae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/104,939 US6919236B2 (en) | 2002-03-21 | 2002-03-21 | Biased, triple-well fully depleted SOI structure, and various methods of making and operating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200307369A TW200307369A (en) | 2003-12-01 |
| TWI270983B true TWI270983B (en) | 2007-01-11 |
Family
ID=28040744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092105160A TWI270983B (en) | 2002-03-21 | 2003-03-11 | Biased, triple-well fully depleted SOI structure, and various methods of making and operating same |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6919236B2 (enExample) |
| EP (1) | EP1488463B1 (enExample) |
| JP (1) | JP4361807B2 (enExample) |
| KR (1) | KR100939094B1 (enExample) |
| CN (1) | CN100346484C (enExample) |
| AU (1) | AU2002361758A1 (enExample) |
| DE (1) | DE60224847T2 (enExample) |
| TW (1) | TWI270983B (enExample) |
| WO (1) | WO2003081677A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7416927B2 (en) * | 2002-03-26 | 2008-08-26 | Infineon Technologies Ag | Method for producing an SOI field effect transistor |
| US7115949B2 (en) * | 2002-05-30 | 2006-10-03 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device in a semiconductor layer and structure thereof |
| US7195961B2 (en) * | 2003-01-30 | 2007-03-27 | X-Fab Semiconductor Foundries, Ag | SOI structure comprising substrate contacts on both sides of the box, and method for the production of such a structure |
| JP2005116623A (ja) * | 2003-10-03 | 2005-04-28 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP4664631B2 (ja) * | 2004-08-05 | 2011-04-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
| TWI240370B (en) * | 2004-08-26 | 2005-09-21 | Airoha Tech Corp | Substrate structure underlying a pad and pad structure |
| CN101238580B (zh) * | 2005-08-18 | 2010-06-16 | 富士通微电子株式会社 | 半导体器件及其制造方法 |
| JP2007115971A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
| US7442996B2 (en) * | 2006-01-20 | 2008-10-28 | International Business Machines Corporation | Structure and method for enhanced triple well latchup robustness |
| DE102007004859A1 (de) * | 2007-01-31 | 2008-08-14 | Advanced Micro Devices, Inc., Sunnyvale | SOI-Bauelement mit einer Substratdiode mit Prozess toleranter Konfiguration und Verfahren zur Herstellung des SOI-Bauelements |
| KR101003115B1 (ko) * | 2007-12-12 | 2010-12-21 | 주식회사 하이닉스반도체 | 플로팅 바디 캐패시터를 구비한 반도체 메모리 소자 및 그제조방법 |
| US7843005B2 (en) * | 2009-02-11 | 2010-11-30 | International Business Machines Corporation | SOI radio frequency switch with reduced signal distortion |
| US8421156B2 (en) * | 2010-06-25 | 2013-04-16 | International Business Machines Corporation | FET with self-aligned back gate |
| FR2980640B1 (fr) * | 2011-09-26 | 2014-05-02 | Commissariat Energie Atomique | Circuit integre en technologie fdsoi avec partage de caisson et moyens de polarisation des plans de masse de dopage opposes presents dans un meme caisson |
| CN103489779B (zh) | 2012-06-12 | 2016-05-11 | 中国科学院微电子研究所 | 半导体结构及其制造方法 |
| US9252228B2 (en) | 2013-11-29 | 2016-02-02 | Qualcomm Incorporated | Threshold voltage adjustment in metal oxide semiconductor field effect transistor with silicon oxynitride polysilicon gate stack on fully depleted silicon-on-insulator |
| US9257353B1 (en) * | 2014-10-24 | 2016-02-09 | GlobalFoundries, Inc. | Integrated circuits with test structures including bi-directional protection diodes |
| FR3038775A1 (fr) | 2015-07-09 | 2017-01-13 | St Microelectronics Sa | Prise de contact substrat pour un transistor mos dans un substrat soi, en particulier fdsoi |
| US9621033B2 (en) | 2015-09-09 | 2017-04-11 | Nxp Usa, Inc. | Charge pump circuit for providing multiplied voltage |
| US9972395B2 (en) * | 2015-10-05 | 2018-05-15 | Silicon Storage Technology, Inc. | Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems |
| US10096708B2 (en) * | 2016-03-30 | 2018-10-09 | Stmicroelectronics Sa | Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate |
| FR3053834B1 (fr) * | 2016-07-05 | 2020-06-12 | Stmicroelectronics Sa | Structure de transistor |
| US10109620B1 (en) * | 2017-07-26 | 2018-10-23 | Globalfoundries Inc. | Method for reducing switch on state resistance of switched-capacitor charge pump using self-generated switching back-gate bias voltage |
| CN109545792B (zh) * | 2018-11-29 | 2022-01-04 | 上海华力微电子有限公司 | 一种sonos存储结构及其制造方法 |
| US11444160B2 (en) | 2020-12-11 | 2022-09-13 | Globalfoundries U.S. Inc. | Integrated circuit (IC) structure with body contact to well with multiple diode junctions |
| CN113594161B (zh) * | 2021-07-30 | 2024-08-23 | 锐立平芯微电子(广州)有限责任公司 | 半导体器件及其制作方法 |
| CN118431316B (zh) * | 2024-07-05 | 2024-10-18 | 武汉新芯集成电路股份有限公司 | 半导体器件及其制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920008834A (ko) * | 1990-10-09 | 1992-05-28 | 아이자와 스스무 | 박막 반도체 장치 |
| US5359219A (en) * | 1992-12-04 | 1994-10-25 | Texas Instruments Incorporated | Silicon on insulator device comprising improved substrate doping |
| JP3110262B2 (ja) * | 1993-11-15 | 2000-11-20 | 松下電器産業株式会社 | 半導体装置及び半導体装置のオペレーティング方法 |
| JPH0832040A (ja) | 1994-07-14 | 1996-02-02 | Nec Corp | 半導体装置 |
| JPH0887881A (ja) * | 1994-09-19 | 1996-04-02 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH08153880A (ja) | 1994-09-29 | 1996-06-11 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP3641511B2 (ja) * | 1995-06-16 | 2005-04-20 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP3462301B2 (ja) | 1995-06-16 | 2003-11-05 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| EP0855788B1 (en) * | 1997-01-23 | 2005-06-22 | STMicroelectronics S.r.l. | NMOS negative charge pump |
| US5923067A (en) | 1997-04-04 | 1999-07-13 | International Business Machines Corporation | 3-D CMOS-on-SOI ESD structure and method |
| SG67518A1 (en) * | 1997-06-30 | 1999-09-21 | Matsushita Electric Works Ltd | Solid-state relay |
| JP3765163B2 (ja) * | 1997-07-14 | 2006-04-12 | ソニー株式会社 | レベルシフト回路 |
| US6072217A (en) * | 1998-06-11 | 2000-06-06 | Sun Microsystems, Inc. | Tunable threshold SOI device using isolated well structure for back gate |
| US6100567A (en) * | 1998-06-11 | 2000-08-08 | Sun Microsystems, Inc. | Tunable threshold SOI device using back gate and intrinsic channel region |
| US6307233B1 (en) * | 1998-07-31 | 2001-10-23 | Texas Instruments Incorporated | Electrically isolated double gated transistor |
| KR100302189B1 (ko) * | 1999-10-05 | 2001-11-02 | 윤종용 | 에스.오.아이(ｓｏｉ)구조를 갖는 반도체 소자 및 그 제조방법 |
| JP3872927B2 (ja) * | 2000-03-22 | 2007-01-24 | 株式会社東芝 | 昇圧回路 |
| US6406948B1 (en) * | 2000-07-13 | 2002-06-18 | Chartered Semiconductor Manufacturing Ltd. | Method for forming an ESD protection network for SOI technology with the ESD device formed in an underlying silicon substrate |
| JP3475162B2 (ja) * | 2000-09-08 | 2003-12-08 | 三洋電機株式会社 | チャージポンプ回路 |
| US6496055B2 (en) * | 2000-12-29 | 2002-12-17 | Intel Corporation | Gate enhanced tri-channel positive charge pump |
| US6677805B2 (en) * | 2001-04-05 | 2004-01-13 | Saifun Semiconductors Ltd. | Charge pump stage with body effect minimization |
| US6661042B2 (en) * | 2002-03-11 | 2003-12-09 | Monolithic System Technology, Inc. | One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region |
| US7432136B2 (en) * | 2002-05-06 | 2008-10-07 | Advanced Micro Devices, Inc. | Transistors with controllable threshold voltages, and various methods of making and operating same |
-
2002
- 2002-03-21 US US10/104,939 patent/US6919236B2/en not_active Expired - Lifetime
- 2002-12-17 KR KR1020047014856A patent/KR100939094B1/ko not_active Expired - Fee Related
- 2002-12-17 CN CNB028286138A patent/CN100346484C/zh not_active Expired - Fee Related
- 2002-12-17 DE DE60224847T patent/DE60224847T2/de not_active Expired - Lifetime
- 2002-12-17 JP JP2003579285A patent/JP4361807B2/ja not_active Expired - Fee Related
- 2002-12-17 AU AU2002361758A patent/AU2002361758A1/en not_active Abandoned
- 2002-12-17 EP EP02797394A patent/EP1488463B1/en not_active Expired - Lifetime
- 2002-12-17 WO PCT/US2002/040398 patent/WO2003081677A1/en not_active Ceased
-
2003
- 2003-03-11 TW TW092105160A patent/TWI270983B/zh not_active IP Right Cessation
-
2005
- 2005-04-21 US US11/111,409 patent/US7180136B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20050184341A1 (en) | 2005-08-25 |
| JP4361807B2 (ja) | 2009-11-11 |
| DE60224847D1 (de) | 2008-03-13 |
| KR20040108678A (ko) | 2004-12-24 |
| EP1488463A1 (en) | 2004-12-22 |
| CN100346484C (zh) | 2007-10-31 |
| JP2005521264A (ja) | 2005-07-14 |
| TW200307369A (en) | 2003-12-01 |
| US7180136B2 (en) | 2007-02-20 |
| DE60224847T2 (de) | 2009-02-05 |
| KR100939094B1 (ko) | 2010-01-28 |
| EP1488463B1 (en) | 2008-01-23 |
| CN1623238A (zh) | 2005-06-01 |
| AU2002361758A1 (en) | 2003-10-08 |
| WO2003081677A1 (en) | 2003-10-02 |
| US6919236B2 (en) | 2005-07-19 |
| US20030178622A1 (en) | 2003-09-25 |
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