TWI267542B - Silicone adhesive sheet and method for manufacturing - Google Patents

Silicone adhesive sheet and method for manufacturing Download PDF

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Publication number
TWI267542B
TWI267542B TW89113544A TW89113544A TWI267542B TW I267542 B TWI267542 B TW I267542B TW 89113544 A TW89113544 A TW 89113544A TW 89113544 A TW89113544 A TW 89113544A TW I267542 B TWI267542 B TW I267542B
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Taiwan
Prior art keywords
group
adhesive sheet
composition
anthrone
crosslinkable
Prior art date
Application number
TW89113544A
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English (en)
Inventor
Minoru Isshiki
Kimio Yamakawa
Yoshito Ushio
Ryoto Shima
Katsutoshi Mine
Original Assignee
Dow Corning Toray Silicone
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Application filed by Dow Corning Toray Silicone filed Critical Dow Corning Toray Silicone
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Publication of TWI267542B publication Critical patent/TWI267542B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/549—Silicon-containing compounds containing silicon in a ring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/28—Non-macromolecular organic substances
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Description

1267542 五、發明說明（1) . 發明背景 _ 本發明係p於一種矽酮黏著劑薄片及其製法，且更特定 言之係關於可以於相當低溫下使用矽酮黏著劑薄片在短時 間内使半導體晶片與晶片連接組件黏結，及有致製造該矽 I 酮黏著劑薄片之方法。 · 在曰本特許公開專利申請案Η 1 1 - 1 2 5 4 6中已提議使用矽 酮黏著劑（其係由可交聯矽酮組合物之交聯產物組成）使半 導體晶片與該晶片之連接組件黏結。然而，此種矽酮黏著 劑薄片之問題為當該半導體晶片經由該薄片與該晶片連接 組件黏結時，黏附力不足，除非各組件於相當高溫下加熱 長時間；但是其會產生該半導體晶片損害之危險。 —本發明之一項目的為提供一種可以於相當低溫下在短時 間内使半導體晶片與晶片連接組件黏結之矽酮黏著劑薄片 ，及有效製造該薄片之方法。 發明簡述 - 本發明第一項具體實例為使用以黏結半導體晶片與晶片 連接組件之矽酮黏著劑薄片，該黏著劑含有含矽拉春衍生 物之可交聯矽酮組合物之交聯產物。本發明第二項具體實 ’ 例為一種製造使半導體晶片與晶片連接組件黏結之矽酮黏 著劑薄片之方法，且其特徵為當使含矽拉春衍生物之可交 聯矽酮組合物在襯底物（其不會與該組合物之交聯產物黏 & 結）之間進行交聯反應時，該襯底物中至少一種之介電常 數比該交聯產物之介電常數還高。 附圖簡述
第6頁 1267542 五、發明說明（2) , 圖1為一種半導體裝置（混合I C)(其中已塗敷本發明該矽_ 酮黏著劑薄片）實例之橫斷面；及 圖2為一種半導體裝置（LSI電路）（其中已塗敷本發明該 矽酮黏著劑薄片）實例之橫斷面。 ^ * 索引： ‘ 1 .半導體晶片 2.矽酮黏著劑薄片 3 ·晶片連接組件（由玻璃纖維強化之環氧樹脂製成之電 路板） 4 .電路導線 ϋ 5 .焊接導線 〇 6 ·密封樹脂 7 .晶片連接組件（由聚醯亞胺樹脂製成之電路板） 8 .凸出物 9 .封合劑/填料 - 發明詳述 本發明第一項具體實例為一種使用以黏結半導體晶片與 晶片連接組件之矽酮黏著劑薄片，該黏著劑含有含矽拉春 ^ 衍生物之可交聯矽酮組合物之交聯產物。本發明第二項具 體實例為一種製造使半導體晶片與晶片連接組件黏結之矽 酮黏著劑薄片之方法，且其特徵為當使含矽拉春衍生物之0 可交聯矽酮組合物在襯底物（其不會與該組合物之交聯產 物黏結）之間進行交聯反應時，該襯底物中至少一種之介 電常數比該交聯產物之介電常數還高。
第7頁 1267542 該矽 半導 晶片 物之 該半 春衍 可以 該可 橡膠 該矽 聯產 及該 部。 構件 合劑 應該 〇 之特 面係 物形 化合 五、發明說明（3) 首先，詳細描述本發明 該矽酮黏著辦薄片以黏結 其特徵為至少與該半導體 面係自一種含石夕拉春衍生 物形成，且其特徵為該與 接觸之面係自一種含矽拉 交聯產物形成，且該内部 中使用之”交聯產物”係指 反應，並已轉化成凝膠或 並沒有特定限制。本發明 可交聯矽酮組合物之該交 產物形成與該半導體晶片 自矽酮橡膠構件形成該内 言，該内部上之矽酮橡酮 酮橡膠顆粒。這些矽酮黏 就實用目的而言，其厚度 佳為1 0至1 0 0 0微米範圍内 本發明矽酮黏著劑薄片 該晶片連接組件接觸之該 交聯矽酮組合物之交聯產 為一種由以下通式描述之 酮黏著劑薄片。使用本發明 體晶片與晶片連結組件，且 及該晶片連接組件接觸之該 可交聯矽酮組合物之交聯產 導體晶片及該晶片連接組件 生物之可交聯矽酮組合物之 自矽酮橡膠構件形成。如文 交聯矽酮組合物已進行交聯 型式，但是對於該交聯程度 酮黏著劑薄片，可以僅自該 物形成，或可以僅自該交聯 晶片連接組件接觸之面，且 就從者之矽酮黏著劑薄片而 實例包括矽酮橡膠薄片及矽 薄片之形狀並未限制，但是 在1與5 0 0 0微米之間，且特 徵為至少與該半導體晶片及 自一種含；5夕拉春衍生物之可 成，且該碎拉春衍生物較佳 物。 ❿
1267542 五、發明說明（4) R- η
R」 ir 鄱 在上式中，各R1係為獨立選自包括一個氫原子及一個烷 基。R1烧基之貫例包括曱基’乙基’丙基，丁基，戍基， 異丙基，異丁基，環戊基，及環己基。R1較佳為一個氫原 子或一個曱基。上式中各R2係為獨立選自包括一個氫原子 '烷基，及式-R4-Si (OR5)之含烷氧基曱矽烷基有機 基團。該R2基團中至少一個為這些含烷氧基曱矽烷基有機 基團之一。由R2表示之該烷基實例和R1之實例相同。當R2 為含烷氧基曱矽烷基之有機基團時，上式中之R4為一種二 價有機基團，其實例包括，亞曱基，伸乙基，甲基亞曱基 ，伸丙基，曱基伸乙基，伸丁基，伸己基，1-曱基伸戊基 ，1，4 -二曱基伸丁基，及其它此種伸烷基；及一種伸烷基 氧伸烷基團，例如，亞曱基氧伸丙基及亞曱基氧伸丁基。 較佳為伸乙基，伸丙基，伸丁基，亞曱基氧伸丙基，及亞 曱基氧伸戊基。上式中之R5為G至(：1()烷基，其實例和R1之 φ 實例相同，較佳為曱基或乙基。上式中之R6為一種經取代 或未經取代之單價烴基，其實例包括曱基，乙基，丙基， 丁基，戊基，異丙基，異丁基，環戊基，環己基，及其它
1267542 五、發明說明（5) , 烷基；芳基，例如，苯基，甲苯基，二甲苯基，及萘基；' 稀基，例如乙稀基，例如，乙稀基，稀丙基，丁烯基， 戊烯基，及己烯基；芳烷基，例如，节基及苯乙基；齒化 烷基，例如，氣曱基，3-氯丙基，3, 3, 3 -三氟七基，及九 氟丁基乙基。較佳為曱基。上式中寫在底下之X為1，2或 3，且較佳為3。以下為由R2表示之該含烷氧基曱矽烷基有 機基圑之實例。 -（CH2)2Si (OCH3)3 -（CH2)2Si (OCH3)2CH3 -(CH2)3Si (OC2H5)3 -(CH2)3Si (OC2H5)(CH3)2 鬌’ —-CH2〇（CH2)3Si(〇CH3)3 - CH20(CH2)3Si(0C2H5)3 -CH20(CH2)3Si (OCH3)2CH3 -CH20(CH2)3Si(0C2H5)2CH3 ' -CH2OCH2Si (OCH3)3 -CH2OCH2Si(OCH3)(CH3)2 上式中之R3係為選自包括經取代及非經取代之單價烴基， h至(：1()烷氧基，縮水甘油氧基烷基，環氧乙烷基烷基，及 醯氧基烷基。由R3表示之該烷氧基實例包括甲氧，乙氧基 ，及丙氧基；由R3表示之該縮水甘油氧基烷基實例包括了 φ 一縮水甘油氧基丙基；由R3表示之該環氧乙烷基烷基實例 包括4 -環氧乙烷基丁基及8 -環氧乙烷基辛基；由R3表示之 該醯氧基烷基實例包括醋酸基丙基及3-曱基丙烯氧基丙
第10頁 1267542 五、發明說明（6) 基。R3較佳為一種烯基或烷氧基，且較佳為烯基。 (croHsJslcHioCH^oHfocc^
CH20CH»oCH2sA>5iocroHvnw ooug/?\ VIIIV3
oHUJs^icHMCHAJCHWoH^y f 、S2S2S2S22(8H3)UJ (CHsCAJsicHMCHMCHU'·
s>〇 OVV^KXo-XCHSSUSiiocH:-
CHJO
CH*v)0CH2CH2CHlvJsi(0CH〕ur 0, )i\N\\ 0 ♦ 1267542 五、發明說明（7)
(CHS'icH
(CH^oorsioHroCHxusro
CH、 # ♦ 頁 2 11 第 1267542 五、發明說明（8) OH 0) sicHrosuc^ CH„ilroCH2
0H2CH2CK2CH2si(0CHu))3 0H2CH20H2CH2siss2)
CH- Φ Φ 第13頁 1267542 五、發明說明（9)
Μ o/yro
Ο
cf Ο
Φ CH2CH2CH2CH2si(iCJOor S20CH2CH2CH 2si(OCH2or s^osrooHros 2 s i (OCHUJ) 3 第14頁 1267542 五、發明說明（10)
Φ-1-Φ 第15頁 1267542 五、發明說明（11)
CH28H2CH2CH2S1 (OCHLJJor
Φ-—I-f 第16頁 1267542 五、發明說明（12) (CHsLAJsisK-^iJ- 0Hu)s°c,icH20H20rr:2〇s2 CH'0HCH20C«;2\ ο 尸 \ /\ ο/ si·
sro00H2CH2CH2si(〇CHu):
Μ 1267542 五、發明說明（13)
1267542 五、發明說明（14)
第19頁 1267542 五、發明說明（15) 以下為製造該矽拉春衍生物之方法之兩種實例。 (1 )使如下^式含環氧之三烷氧基矽烷化合物： CR^-CRLrLsKOR7)] \ / -〇 其中各R1係為獨立選自包括一個氫原子及一個烷基 R4為一種二價有機基團；且R7 —種為C^-Cio院基； 與氨或如下式胺化合物反應： NH^CR^CR^OH)^^) 41 其中各R1係為獨立選自包括一個氫原子及一個烷基；_且乂 為1或2。 _( 2 )使如下式環氧基之烷氧基矽烷化合物： CRij-CRi—R -Si(OR )xR (3-x) \ / 0 其中各R1係為獨立選自包括一個氫原子··及一個烷基；R4 為一種二價有機基團；R6為一種經取代或未經取代之單價 烴基；R7為一種h至(：1()烷基；且X為1，2，或3 ;及如下式 烧氧基碎烧化合物： R8Si(OR9)3 其中各R8係為獨立選自包括經取代及未經取代之單價烴 基，（^至(31()烧氧基，酸氧基烧基，及胺烧基；且R9為一種 & q至01{)烧基； 與氨或如下式胺化合物反應： NHyCCR^CR^OH)^^)
第20頁 1267542 五、發明說明（16) 其中各R1係為獨立選自包括一個氫原子及一個烷基；且y 為1或2。 · 使用這些方法，咸信該氨或胺化合物可引起一個環氧基 環分裂反應，且經由該環分裂反應所產生之羥>基，或該胺 化合物中之羥基與該烷氧基矽烷中之矽原子鍵結烷氧基之 間所進行之烷氧基置換反應產生之環化反應形成矽拉春衍 生物。 在第一種製法中，該含環氧基之三烷氧基矽烷化合物包 括4 -環氧乙烷基丁基三曱氧基矽烷，8 -環氧乙烷基辛基三 曱氧基矽烷，3 -縮水甘油氧基丙基三曱氧基矽烷，3 -縮水 甘油氧基丙基三乙氧基矽烷，縮水甘油氧基曱基三曱氧基_1 石夕烧，及縮水甘油氧基甲基三乙氧基石夕烧。該胺化合物之 實例包括2 -羥基乙胺，2, 2’ -二羥基乙胺，及2 -羥基-2-曱 基-乙胺。 在第一種製法中，相對於該氨而言，對於該含環氧基之 三烧氧基發烧化合物添加量並未限制，但是為了使副產物 -或至最低並以較佳產率獲得矽拉春衍生物，若於該氨不會 經由蒸發而損失之條件下進行該反應時，該含環氧基之三 烷氧基矽烷化合物之使用量應該為每莫耳氨之3至30莫耳 ，且較佳為每莫耳氨之4至2 0莫耳。相對於該製造中之該 胺化合物而言，對於該含環氧基之三烷氧基矽烷化合物添4 加量並未限制，但是為了使副產物減至最低並以較佳產率 獲得矽拉春衍生物，若該胺化合物中之y為1時，該含環氧 基之三烷氧基矽烷化合物使用量應該為每莫耳胺化合物之 1267542 五、發明說明（17) 1· 5至10莫耳，較佳為每莫耳胺化合物之2至5莫耳，但 是，若該胺北合物中之y為2時，該含環氧基之三烷氧基矽 烷化合物使用量應該為每莫耳胺化合物之2. 5至20莫耳，-且較佳為每莫耳胺化合物之3至10莫耳。 在第二種製法中，該含環氧基之烷氧基矽烷化合物實例 包括4 -環氧乙烷基丁基三曱氧基矽烷，4 -環氧乙烷基丁基 曱基二曱氧基石夕烧，8 -環氧乙烧基辛基三甲氧基石夕烧，3-縮水甘油氧基丙基三曱氧基矽烷，3-縮水甘油氧基丙基三
乙氧基矽烷，3 -縮水甘油氧基丙基甲基二曱氧基矽烷，3-縮水甘油氧基丙基曱基二乙氧基矽烷，縮水甘油氧基曱基 三曱氧基矽烷，縮水甘油氧基甲基曱基二甲氧基矽烷，及 縮水甘油氧基曱基三乙氧基矽烷。胺化合物之實例和上述 該化合物相同。烷氧基矽烷之實例包括四曱氧基矽烷，四 乙氧基矽烷，曱基三曱氧基矽烷，曱基三乙氧基矽烷，乙 烯基三曱氧基矽烷，乙烯基三乙氧基矽烷，苯基三曱氧基 矽烷，及3-曱基丙烯氧基丙基曱氧基矽烷。 · 在第二種製法中，相對於該氨而言，對於該含環氧基之 烷氧基矽烷化合物添加量並未限制，但是為了使副產物減 至最少並以較佳產率獲得矽拉春衍生物，若於該氨不會經 由蒸發損失之條件下進行該反應時，該含環氧基之烷氧基 矽烷化合物使用量應該為每莫耳氨之2至2 0莫耳，且較佳$ 為每莫耳氨之3至15莫耳。該烷氧基矽烷化合物之添加量 應該為每莫耳氨之0.5至50莫耳，且較佳為每莫耳氨之1至 2 0莫耳。相對於第二種製法中之該胺化合物而言，對於該
_纖 第22頁 1267542 五、發明說明（18) 含環氧基之 使副產物減 胺化合物中 用重應該為 莫耳胺化合 時，該含環 20莫耳，且 添加量應該 每莫耳胺化 就這些製 利用加熱進 下進行加熱 中，可視需 括己烧，庚 其它芳族烴 基異丁基酮 醋酸乙S旨， 基乙醯胺， 醇，或其它 得該目標物 該反應中為 應，該醇較 或該含環氧 中之該矽原 烷氧基矽烷化合物添 至最少並以較佳產率 之y為1時，該含環氧 每莫耳胺化合物之0 . 物之0. 8至5莫耳，但 氧基之烧氧基碎烧化 較佳為1 . 8至1 0莫耳 為每莫耳胺化合物之 合物之1至2 0莫耳。 造矽拉春衍生物之方 行該反應，但是較佳 ，因此該反應不會耗 要選用有機溶劑，可 烷，辛烷，及其它脂 :甲醇，乙醇，異丙 ，及其它酮；二乙醚 醋酸異戊酯，及其它 及其它臨胺化合物。 此種醇可縮短反應時 ^夕拉春衍生物。當在 了使該矽原子鍵結之 佳為具有與該含環氧 基之烧氧基紗烧化合 子鍵結烷氧基相同之 加量並未限制，但是為了 獲得^夕拉春衍生物，若該 基之烧氧基碎烧化合物使-5至1 0莫耳，且較佳為每 是若該胺化谷物中之y為2 合物使用量應該為1 . 5至 。該烧氧基碎烧化合物之 0 . 5至5 0莫耳，且較佳為 法而言，可以於常溫下或 為於1 0 0 °C或較低之溫度 費太多時間。在上述製法 以使用之有機溶劑實例包 族烴；曱苯，二曱苯，及 醇，及其它醇；丙酮，曱 ，四氫咲喃，及其它_ ; 酯；二曱基曱醯胺，二曱 特定言之，使用曱醇，乙 間，並可以以較高產率獲 上述製法中添加醇時，在 烷氧基產生烷氧基置換反 基之三烧氧基碎烧化合物 物及該烷氧基矽烷化合物 碳原子數。而且，當在上
11 第23頁 1267542 五、發明說明（19) 述製法中添加醇時，於該醇之回流溫度下進行反應時，可、 以相當大的縮短反應時間，且其亦可增加所形成矽拉春衍 生物之產率。 ' 雖然對於該可交聯矽酮組合物中所包含之該矽拉春衍生 物含量並未限制，但是其含量較佳為每1 0 0重*份數矽酮 聚合物（其係為該可交聯矽酮組合物中之主要組份）之0 . 0 1 至2 0重量份數，更特佳為〇 . 1至1 〇重量份數。其係因為若 該矽拉春衍·生物之含量在上述範圍下限以下時，該交聯產 物之黏附性有降低傾向，然而超過該範圍上限並不會更增 加黏附性，且實際上會降低該矽酮黏著劑薄片之安定性。 含該矽拉春衍生物之該可交聯矽酮組合物實例包括經由 石夕氫化反應交聯之組合物，經由縮合反應交聯之組合物， 經由有機過氧化物交聯之組合物，經由紫外線交聯之組合 物，但是較佳為經由碎氫化反應交聯之組合物。該碎氫化 反應可交聯石夕酮組合物包含，例如，（A )每分子具有至少 兩個烯基與矽原子鏈結之有機聚矽氧烷，（B )每分子具有 . 至少兩個氫原子與矽原子鍵結之有機聚矽氧烷，（C)矽拉 春衍生物，及（D )矽氫化反應觸媒。 _ 組份A為該上述矽氫化反應可交聯組合物之主要組份， 且係為一種每一分子具有至少兩個烯基與矽原子鍵結之有 機聚矽氧烷。該組份A之分子結構實例包括直鏈，其部份 分支鏈之直鏈，分支鏈，及樹脂狀。組份A中該碎原子鍵 結烯基之實例包括乙烯基，烯丙基，丁烯基，戊烯基，己 烯基，尤佳為該乙烯基。組份A中這些烯基之鍵結位置可
第24頁 1267542 五、發明說明（20) 以於該分子鏈 矽原子鍵結羞 如，曱基，乙 它烷基；芳基 ;芳烧基，例 基，3 -氯丙基 。相對於與組 苯基含量亦較 為1至3 ◦莫耳％ 具有優異抗冷 裝置具有更佳 但是，於2 5 °C 秒）。 該矽氫化反 ，且其為一種 之有機聚矽氧 部份分支鏈之 原子之鍵結位 份B中該非氫」 經取代之單價 基，己基，庚 基，二曱苯基 鹵化烧基，例 。尤佳為該曱 末端，側邊，或兩者。組份A中該非烯基之 團實例包括經取代與未經取代之單價烴，例 基，丙基，丁基，戊基，己基，庚基，及其 ，例如，苯基，曱苯基，二曱苯β基，及萘基 如，苄基及苯乙基，鹵化烧基，‘例如，氯曱 ，及3, 3, 3-三氟丙基。尤佳為該曱基及苯基 份Α中之矽原子鍵結之該有機基團而言，該 在為至少1莫耳％，尤佳為1至6 0莫耳％，更佳 。該苯基之在可以使所形成石夕酮衍生物薄片 性，且使用該矽酮黏著劑薄片製成之半導體 可靠性。雖然對於組份A之黏度並未限制， 下，較佳為10至！，000,000 mPa - s(毫帕· 應可交聯矽酮組合物之組份B為一種交聯劑 每一分子具有至少兩個氫原·子與矽原子鍵結 烷。該組份B之分子結構實例包括直鏈，具 · 直鏈，分支鏈，及樹脂狀。組份B中這些氫 置可以於該分子鏈末端，側邊，或兩者。組 I子之矽原子鍵結基團實例包括經取代與非 烴基，例如，曱基，乙基，丙基，丁基，戊 基，及其它烷基；芳基，例如，苯基，曱苯$ ，及萘基；芳烧基，例如，苄基與苯乙基； 如，氯曱基，3 -氣丙基，及3, 3, 3-三氟丙基 基及苯基。雖然對於組份B之黏度並未限制 1267542 五、發明說明（21) ，但是，於2 5 °C下較佳為1至1 0 0，0 0 0 m P a · s。 _ 組份B之含]量應該夠大以固化上述矽氫化反應可交聯組 合物，其含量為致使該組合物中每一莫耳矽原子鏈結烯基 具有0 · 5與1 0莫耳間之矽原子鍵結氫原子。尤凌為1至5莫 耳。其係因為若每莫耳矽原子鍵結烯基之該組合物中該矽 原子鍵結氫原子莫耳數在上述範圍下限以下時，會有不充 份固化之傾向，但是若該莫耳數高過該範圍時，該交聯產 物之抗熱性會降低。 使用組份C以增加該交聯組合物之黏著性，且其實例為 上述相同矽拉春衍生物。組份C含量應該夠大以使上述組 j 合物之交聯產物具有特別優異之黏著性。例如，其含量應” 該為每1 00重量份數組份A之0. 0 1與20重量份量之間，且尤 佳為0 . 1至1 0重量份數。其係因為若組份C之含量在上述範 圍下限以下時，該交聯產物之黏著性有降低傾向，但是若 高過上述範圍上限時，黏著性並不會更增加，且該矽酮黏 著劑薄片之安定性實際上有降低之傾向。 - 組份D是一種觸媒，其使用以促進該矽氫化反應可交聯 組合物經由石夕氫化反應產生交聯作用。其實例包括以始為 主之觸媒，以铑為主之觸媒，以鈀為主之觸媒，及其它已 知矽氫化反應觸媒。特定言之，較佳為鉑微顆粒，鉑黑， 石夕石微顆粒載细，活性炭載始，氯韵酸，氯始酸之醇溶液 ，始之稀烴複合物，始之稀基碎氧烧複合物，麵之綠基複 合物，及其它此種以鉑為主之觸媒，因為該反應進行之速 度更佳。
第26頁 1267542 五、發明說明（22) 組份D之含量足以促進上述矽氫化反應可交聯組合物之 交聯反應。#使用鉑觸媒時，經由該觸媒提供該組合物之 鉑金屬應該在0·01與1 0 0 0 ppm(重量單位）之間，且尤佳為-0 · 1至5 0 0 p p m。其係因為若該組合物中之組份1含量在上 述範圍下限以下時，該交聯反應會很慢，但臭高過上述範 圍上限，完全不能增加該交聯反應速率，且可引起例如， 該交聯產物褪色之問題。 上述組合物較佳包含一種石夕氫化反應抑制劑以調整該石夕 氫反應速奉。該矽氫化反應抑制劑之實例包括3-曱基_ 1 -丁炔-3-醇，3, 5 -二曱基-1-己炔-3-醇，苯基丁烯醇，及 其它炔醇；3-曱基-1-戊烯-1-炔，3, 5 -二曱基-3 -己烯-1 -炔，及其它烯炔化合物；1，3, 5 -四曱基-1，3, 5, 7 -四乙烯 基環四石夕氧烧，1，3，5 ,7-四甲基-1,3，5，7 -四己稀基環四 石夕氧烧，及苯并三°坐。雖然，該石夕氫化反應抑制劑之含量 根據上述組合物進行交聯之條件而不同，·但是就實際應用 而言較佳為每1 0 0重量份數組份A之0 . 0 0 0 0 1至5重量份數。. 若需要亦可添加其它組份至上述組合物中，其實例包括 沉澱矽石，濕矽石，煙燻矽石，煅燒矽石，氧化鈦，礬土 _ ，玻璃，石英，紹石夕酸，氧化鐵，氧化鋅，碳酸妈，碳黑 ，碳化矽，氮化矽，氮化硼，及其它此種無機填料，以及 使用有機鹵矽烷，有機烷氧基矽烷，有機矽氮烷，或其它& 此種有機矽化合物處理上述填料所獲得之無機填料；矽酮 樹脂5壞氧樹脂’氣樹脂’及其它此種有機樹脂微粉末； 銀，銅，及其它此種導電金屬粉末，與其它填料；以及染
第27頁 1267542 五、發明說明（23) 料，色素，以焰阻滯劑，及 現在可詳却描述製造碎酉同 發明該製法為一種製造黏結 矽酮黏著劑薄片之方法，其 可交聯碎嗣組合物在不會與 底物間進行交聯反應，其特 電常數比該交聯產物之介電 酮組合物之交聯產物黏結且 電常數還蒿之襯底物實例包 此種無機襯底物，與包含聚 樹脂，聚醚楓樹脂，環氧樹 其它有機樹脂之襯底物。接 襯底物兩側尤佳具有氧原子 為構成選自包括羰基，烷氧 。該硫原子較佳為構成選自 。不會與該可交聯矽酮之交 含一種有機樹脂。這些襯底 或其可以是僅在該表面上或 材料。這些複合襯底物之一 脂之表面經氟樹脂或其它有 然對於這些襯底物之形狀並 塊狀物，薄片或薄膜型式之 物，因為其可以作為該以矽 料，且當該以矽酮為主之黏 溶劑。 黏著劑薄片之 半導體晶片與 包括使一種含 該組合物之交 徵為該概底物 常數還高。不 其介電常數比 括金屬，金屬 醯亞胺樹脂， 脂，驗樹脂， 觸該可交聯矽 及/或硫原子。 基，酯基團， 包括楓基團及 聯產物黏結之 物可僅由這些 内部具有這些 項實例為其中 機樹脂覆蓋之 沒有限制，但 材料。尤佳使 洞為主之黏者 著劑薄片欲塗 本發明方法。本 晶片連接組件之 矽拉y春衍生物之 聯差物黏結之襯 中至少一個之介 會與該可交聯矽 該交聯產物之介 氧化物，及其它 聚樹脂：聚 聚醯胺樹脂，及 明組合物之這些 該氧原子較佳 及醚基團之原子 硫醚基團之原子 該襯底物較佳包 有機樹脂組成， 有機樹脂之複合 一種上述有機樹 複合襯底物。雖 是其實例包括星 用薄膜狀之襯底 劑薄片之保護材 敷至該半導體晶
第28頁 1267542 件時，可剝掉該保護材 瘦材料以取代該保護材 護材料之介電常數並沒 ，II樹脂，聚乙稀樹脂 脂薄膜。 法中所使用之該可交聯 生物）並沒有特定限制 應交聯之矽酮組合物， 經由有機過氧化物交聯 之石夕酮組合物，且較佳 物。該矽氫化反應可交 組合物，且該砍拉春衍
II 五、發明說明（24) 片與晶片連接組 種薄膜形狀f保 況下，對於該保 可以使用，例如 其它此種有機樹 對於本發明製 其包含5夕拉春衍 可經由石夕氫化反 之石夕酮組谷物， 經由紫外線交聯 交聯之矽酮組合 例為上文列舉之 列舉之化合物。 在本發明製法 組合物經交聯， 法，載體（例如 該可交聯矽酮組 在該非黏結襯底 樹脂顆粒，或無 組合物經交聯， 較佳在該可交 調整厚度後使其 襯底物之間。為 其留置於室溫下 料。可以使用另一 料。雖然在此種情 有特定限制，但是 ，聚丙 > 樹脂，或 矽酮組合物（只要 但是其實例包括 經由縮合反應交聯 之矽酮組合物，及 為經由矽氫化反應 聯矽酮組合物之實 生物之實例為上文 中進行交聯之方法實例包括使可交聯矽酮 同時使其夾在上述非黏接襯底物之間之方 矽酮橡膠薄片或有機樹脂薄片）之兩側經 合物塗覆，然後使該塗層經交聯，同時夾 物之間之方法，使含矽酮橡膠顆粒，有機 機顆粒，或另一種此種填料之可交聯矽酮 同時夾在該非黏結襯底物之間之方法。 聯矽酮組合物經雙輥，壓機，或諸如此類 交聯，同時使該可交聯矽酮組合物夾在該 了交聯該可交聯矽酮組合物，例如，可使 或於2 0 0 °C或較低之溫度下加熱。
第29頁 1267542 五、發明說明（25) 使用以此種方法製造之該矽酮黏著劑薄片以黏結半導體 晶片與晶片卑接組件。半導體晶片（例如，混合I C中之半 導體晶片，或二極體，電晶體，半導體開關組件，單片I C ，或其它此種裝置）一側之全部或局部可以與蟲片連接組 件黏結。現在詳細描述使用該矽酮黏著劑薄片以黏結半導 體晶片與晶片連接組件之方法。圖1為一種混合I C之斷面 圖，而圖2為一種LS I晶片之斷面圖，其皆為可塗敷本發明 矽酮黏著劑薄片之半導體裝置實例。圖1中所述之該半導 體裝置具有經由矽酮黏著劑薄片2與半導體晶片連接組份 3(在圖1中’由玻璃纖維強化之壞乳樹脂製成之電路·板）黏^^ 結之半導體晶片1 ，且半導體晶片1係經由焊線5與和外部胃 導線相連之電路導線4電連。可以自陶瓷，玻璃，環氧樹 月旨，聚醯亞胺樹脂，酚樹脂，電木樹脂，三聚氰胺樹脂， 玻璃纖維強化環氧樹脂，或諸如此類形成半導體晶片連接 組件3。可以自金、銅、I呂、銀-I巴，氧化·铜錫（I T 0 )，或 諸如此類形成電路導線4。可以自金，銅，或鋁形成焊線 5。可經由密封樹脂6密封半導體晶片元件1。可形成密封 樹脂6之該樹脂實例包括環氧樹脂，紛樹脂，及聚硫化伸 苯樹脂。除了半導體晶片1外，亦可以安裝電子零件（例如 ，電阻器，電容器，及線圈）在半導體晶片連接組件3上。 圖2中所述之該半導體裝置具有經由矽酮黏著劑薄片1與0 晶片連接組件7 (在圖2中，由聚醯亞胺樹脂製成之電路板） 黏結之半導體晶片1 ，且半導體晶片1係經由凸出物8與半 導體晶片連接組件7上之電路導線4電連。可以自聚醯亞胺
第30頁 1267542 五、發明說明（26) 樹脂，陶瓷，玻璃纖維強化環氧樹脂，或諸如此類形成半 導體晶片連學組件7。可以自金，鋁，焊錫，或諸如此類 形成凸出物8。在半導體晶片1與半導體晶片連接組件7間~ 之凸出物8附近區域可經由封合劑/填料9密封益填滿。封 合劑/填料9之實例包括液體可固化矽酮樹脂及液體可固化 環氧樹脂。若需要，半導體晶片1可經由密封樹脂6密封。 以下為一種使用上述矽酮黏著劑薄片使半導體晶片與晶 片連接組件黏結之方法實例。就圖1所示之該半導體裝置 而言，使矽酮黏著劑薄片與半導體晶片1黏結，然後經由 該薄片使該半導體晶片1與半導體晶片連接組件3上〖然後 經由該薄片使半導體晶片1與半導體晶片連接組件3黏結’ 且於室溫下與置該產物，或於2 0 0 °C或較低溫度下使該產 物經加熱。此時，較佳將該薄片壓至該欲黏結之組件上以 確保黏附性。其後，一經由焊線5使半導體晶片1與電路導 線1電連。然後，若需要以密封樹脂6密封半導體晶片1。 就圖2所示之該半導體裝置而言，使該矽酮黏著劑薄片與 半導體晶片1黏結，然後經由該薄片使半導體晶片1與半導 體晶片連接組件7黏結，或使該矽酮黏著劑薄片與半導體 晶片連接組件7黏結，然後經由該薄片使半導體晶片1與半 導體晶片連接組件7黏結，且於室溫下留置該產物，或於 2 0 0 °C或較低溫度下使該產物經加熱。此時，較佳將該薄 片壓至該欲黏結之組件上以確保黏附性。其後，經由凸出 物8使半導體晶片1與電路導線4電連。然後使凸出物8附近 之區域經封合劑/填料9密封並填滿。若需要，再以密封樹
第31頁 1267542 五、發明說明（27) 脂6密封半導體晶片1 。因為本發明該矽酮黏著劑薄片可以\ 於相當低溫：F使半導體晶片與晶片連接組件黏結，所以該 半導體晶片不會因此而損壞，且所形成半導體裝置之可靠-性較高。 - 操作實例 可經由操作實例描述本發明矽酮黏著劑薄片及其製法。 該操作實例中所示之黏度係於2 5 °C下測得，且該可交聯矽 酮組合物之交聯產物介電常數係於2 5 °C及1 Μ Η z下測得。 該矽酮黏著'劑薄片之黏附性評估方法如下。以矽酮黏著劑 薄片（1 X 1厘米）使矽晶圓（3 X 3厘米）與環氧樹脂薄片（3 X 3厘米）黏結在一起，其後施用5千克力/厘米2之力至該裝 ” 配上，同時於1 0 0 °C下使其加熱1 0分鐘，產生一種黏合測 試片。以反方向用力拉如此獲得之該黏合劑測試片以進行 測試，測定已產生凝聚失效之該測試片表面積之比率（％) ，且使用該比率作為黏著指數。除了於1 50 °C下加熱30分 鐘不同外，同樣評估以如上述之相同方法製成之黏合測試 -片之黏著性。 參考實例1 ，將1 2 . 2克（0 . 2莫耳）2 -羥基乙胺，8 8 . 9克 (0.6莫耳）乙烯基三曱氧基矽烷，94.5克（0.4莫耳）3 -縮水 甘油氧基丙基三曱氧基矽烷，及32.0克曱醇放入500毫升 配備攪拌器，溫度計，回流冷凝器之四頸燒瓶内。於曱醇Φ 之回流溫度下使該系統加熱並攪拌8小時。將全部該反應 混合物轉移至一個燒瓶内，並經由旋轉蒸發法蒸餾出低沸 點組份，產生1 3 2克微黃色半透明液體。使該半透明液體
第32頁 1267542 五、發明說明（28) 進行29Si-NMR(核磁共振）分析及13C-NMR分析，其證實如下 式之矽拉春衍生物之含量為至少9 0重量％。
CH，OC WH2Si(OCH、）· (CH,0)，SiCH9CH9CHp 參考實例2，將1 4 8 . 2克（1 · 0莫耳）乙烯基三曱氧基矽 烷，1 4 1 . 8克（0 · 6莫耳）3 -縮水甘油氧基丙基三甲氧基矽 烷，及6 4 · 0克曱醇放入5 0 0毫升配備攪拌器，溫度計，回 流冷凝器之四頸燒瓶内。於曱醇回流溫度下使該系統加熱 並攪拌，然後系統在加熱下回流2 4小時，同時以5 0毫升/ 分鐘速率每小時喷灑氨氣2分鐘。將全部該反應混合物轉 移至一個燒瓶内，並經由旋轉蒸發法蒸餾出低沸點組份， 產生1 5 2 . 1克微黃色半透明液體。使液半透明液體進 行29Si-NMR分析及13C-NMR分析，其證實如下式之矽拉春衍 生物之含量為至少9 0重量％。
(CH3〇)3SiCH2CH2CH2 OCH
CH2〇CH2CH2CH2Si(OCH3)3 CH20CH2CH?CH2Si(0CH3)3
第33頁 1267542 五、發明說明（29) 參考實例3_，將12· 2克（0· 2莫耳）2-羥基乙胺，125. 0克 (0 · 2莫耳）四乙氧基矽烷，1 1 1 · 4克（0 · 4莫耳）3 -縮水甘油― 氧基丙基三乙氧基矽烷，及30.0克乙醇放入5 0 &毫升配備 攪拌器，溫度計，回流冷凝器之四頸燒瓶内。‘·於乙醇之回 流溫度下使該系統加熱並攪拌1 5小時。將全部該反應混合 物轉移至一個燒瓶内，並經由旋轉蒸發法蒸餾出低沸點組 份，產生1 3 4. 5克微黃色不透明液體。使該不透明液體進 行29Si-NMR分析及13C -NMR分析，其證實如下式之矽拉春衍 生物之含量為至少9 0重量％。
(C2K5〇)3SiCH2CK2CH2 操作實例1，使7 2重量份數具黏度為4 0，0 0 0 mP a · s之二 曱基乙烯基曱矽烷氧基封端二曱基聚矽氧烷（乙烯基含量： 0.08重量％ )，15重量份數具黏度為6000 mPa *s之二曱基 乙烯基甲矽烷氧基封端二曱基矽氧烷一曱基乙烯基矽氧烷 共聚物（乙烯基含量=0 · 84重量％ )，3重量份數六曱基二矽 氮烷，及具BET比表面積為2 0 0米V克之微粒狀煙燻矽石在
第34頁 1267542 五、發明說明（30) R 〇 s s混合器内混合1小時，其後在減壓下，於1 7 0 °C下使其 再混合2小時_。然後使該系統冷卻至室溫以製備一種半透 明，糊狀物型式之矽酮橡膠基材。 然後將3重量份數具黏度為5 m P a · s之三曱基-甲石夕烧氧
基封端二曱基矽氧烷-曱基氫矽氧烷共聚物（石夕·原子鍵結氫 原子含量=0 . 7重量％ )，1 . 0重量份數參考實例1所製成之該 石夕拉春衍生物，姑之1，3-二乙稀基-1,1，3，3 -四曱基二石夕 氧烧複合物（就該組合物而言，其以重量單位表示之含量 為在該複合物中5 ppm链金屬），及0.01重量份數3 -苯基 - 1 - 丁炔-3 -醇均勻混入1 0 0重量份數上述矽酮橡膠基_材内 以製備一種具黏度為7 0，0 0 0 mP a · s之矽氫化反應可交聯 矽酮組合物。 使該可交聯矽酮組合物夾在具硫原子（該楓基團中之硫 原子）化學性鍵結在其表面上之聚醚楓樹脂薄膜（厚度：1 0 0 微米，介電常數：3 . 5 )之間，然後在8 0 °C ·熱空氣循環烘箱 内使該產物經加熱3 0分鐘以進行交聯反應，在此種情況下 ，使該可交聯矽酮組合物通過不銹鋼雙輥，其厚度被減至 2 0 0微米，因此可製成一種矽酮黏著劑薄片。該矽酮黏著 劑薄片很容易自該聚醚楓樹脂薄片剝離，且其具約2 0 0微 米均勻厚度及2 . 8之介電常數。表1顯示該矽酮黏著劑薄片
之黏附性。 操作實例2，除了以相同量添加參考實例2所製成之該矽 拉春衍生物取代參考實例1所製成之該^夕拉春衍生物不同 外，以如操作實例1之相同方法製備矽酮黏著劑薄片。所 1267542 五、發明說明（31) 獲得之該矽酮黏著劑薄片很容易自該聚醚碾樹脂薄片剝 離，且其具釣2 0 0微米之均勻厚度及2 . 8之介電常數。表1 顯示該矽酮黏著劑薄片之黏附性。 - 操作實例2，除了以相同量添加參考實例2所1成之該矽 拉春衍生物取代參考實例1所製成之該矽拉春、生物不同 外，以如操作實例1之相同方法製備矽酮黏著劑薄片。所 獲得之該矽酮黏著劑薄片很容易自該聚醚碾樹脂薄片剝 離，且其具約2 0 0微米之均勻厚度及2 . 8之介電常數。表1 顯示該石夕酮黏著劑薄片之黏附性。 操作實例3，除了以相同量添加參考實例3所製成之該矽 拉春衍生物取代參考實例1所製成之該矽拉春衍生物不同 外，以如操作實例1之相同方法製備矽酮黏著劑薄片。所 獲得之該矽酮黏著劑薄片很容易自該聚醚楓樹脂薄片剝 離，且其具約2 0 0微米之均勻厚度及2. 8之介電常數。表1 顯示該矽酮黏著劑薄片之黏附性。 ·· 比較實例1，除了未添加參考實例1所製成之該矽拉春衍 生物不同外，以如操作實例1之相同方法製備矽酮黏著劑 薄片。如此獲得之該矽酮黏著劑薄片很容易自該聚醚楓樹 脂薄片剝離，且其具約2 0 0微米之均勻厚度及2 · 8之介電常 數。表1顯示該石夕明黏著劑薄片之黏附性。 比較實例2，除了以相同量添加具黏度為4 0 mP a · s之3 -縮水甘油氧基丙基三曱氧基矽烷及二曱基羥基封端甲基乙 烯基聚矽氧烷（乙烯基含量=3 1重量％)之1 : 1 (重量比）混合 物取代參考實例1所製成之該矽拉春衍生物不同外，以如
第36頁 1267542 五、發明說明（32) 操作實例1之相同方法製備石夕酮黏著劑薄片。如此獲得之 該矽酮黏著齊丨薄片很容易自該聚醚楓樹脂薄片剝離，且其 具有約2 0 0微米之均勻厚度及2 · 8之介電常數。表1顯示該· · 矽酮黏著劑薄片之黏附性。 - 比較實例3，除了以相同量添加具黏度為2 0·. mPa · s如以 下平均單位式之有機石夕氧烧（乙稀基含量=16重量％)取代參 考實例1所製成之該矽拉春衍生物不同外，以如操作實例1 之相同方法製備矽酮黏著劑薄片。如此獲得之該矽酮黏著 劑薄片偎袁易自該聚醚楓樹脂薄片剝離，且其具有約2 0 0 微米之均勻厚度及2 · 8之介電常數。表1顯示該矽酮黏著劑 薄片之黏附性。 ' (CH2CIICH2O(CH2)3SiO3/2)ai8[(CH3)(CH2=CH)Si〇2/2](M7(CH3〇i/2)0.35 表1 粘著性 操作 實例1 操作 實例2 操作 實例3 比較 實例1 比較 實例2 比較 實例3 於100°C下加熱10分鐘後 石夕晶片 100% 100% 100% 0% 80% 90% 環氧樹脂薄片 100% 100% 90% 0% 20% 40% 於150°C下加熱30分鐘後 砂晶片 100% 100% 100% 10% 100% 100% 環氧樹脂薄片 100% 100% 100% 0% 100% 100%
第37頁

Claims (1)

1267542 _案號89U3544〜 年ίΖ·月 日^; 修正_ 六、申請專利範圍 1 . 一種黏結半導體晶晶片連接組件之矽酮黏著劑薄 片，其包含一種含矽拉春衍生物之可交聯矽酮組合物之交 聯產物，其中該矽拉春衍生物為一種如下式化合物：
其中各R1係為獨立選自由氫原子及烷基組成之群；各R2係 為獨立選自由氳原子，烷基，及如式-R4-Si (OR5)』6}。之 含烷氧基曱矽烷基有機基團組成之群，其中R4為二價有機 基團，R5為h至(：1()烷基，R6為經取代或未經取代之單價烴 基，且X為1 ，2，或3，該R2基團中至少一種為含烷氧基曱 矽烷基有機基團，且R3係為選自由經取代與未經取代之單 價烴基，Q至(：1()烷氧基，縮水甘油氧基烷基，環氧乙烷基 烷基，及醯氧基烷基組成之群及該矽拉春衍生物含量為每 1 0 0重量份數聚有機矽氧烷之0. 0 1至2 0重量份量，該聚有 機矽氧烷包括該可交聯矽酮組合物之主要組份。 2. 根據申請專利範圍第1項之矽酮黏著劑薄片，其中該 外侧係自含矽拉春衍生物之可交聯矽酮組合物之該交聯產 物形成，而該内側係自不含該矽拉春衍生物之矽酮橡膠組 合物形成。 3. 根據申請專利範圍第1項之矽酮黏著劑薄片，其中R3
O:\65\65237-931224.ptc 第39頁 1267542 · _案號89113544_^^年丨乙月 日 修正_ 六、申請專利範圍 係為選自由烯基及烷氧基組成之群。 4.根據申請專利範圍第1項之矽酮黏著劑薄片，其中該 可交聯矽酮組合物係經由矽氫化反應交聯。 5 . —種製造黏結半導體晶片與晶片連接組件之矽酮黏著 劑薄片之方法，其包括使含矽拉春衍生物之可交聯矽酮組 合物在不會與該組合物之交聯產物黏結之襯底物間進行交 聯反應，其中該襯底物中至少一個之介電常數比該交聯產 物之介電常數還高，其中該矽拉春衍生物為一種如下式化
其中各R1係為獨立選自由氫原子及烷基組成之群；各R2係 為獨立選自由氫原子，烷基，及如式-R4-Si (OR5 hR6},)之 烷氧基甲矽烷基有機基團組成之群，其中R4為二價有機基 團，R5為h至*^。烷基，R6為經取代或未經取代之單價烴 基，且X為1 ，2，或3，該R2基團中至少一個為含烷氧基曱 矽烷基有機基團，且R3係為選自由經取代與未經取代之單 價烴基，h至(：1()烷氧基，縮水甘油氧基烷基，環氧乙烷基 烷基，及醯氧基烷基組成之群及該矽拉春衍生物含量為每 1 0 0重量份數有機矽氧烷之0. 0 1至2 0重量份數，該聚有機 矽氧烷包括該可交聯矽酮組合物之主要組份。 6 .根據申請專利範圍第5項之製造矽酮黏著劑薄片之方
O:\65\65237-931224.ptc 第40頁 1267542 ι _案號89113544 %年/Z月日 修正_ 六、申請專利範圍 法，其中R3係為選自由烯基及烷氧基組成之群。 7. 根據申請專利範圍第5項之製造矽酮黏著劑薄片之方 法，其中該可交聯矽酮組合物係經由矽氫化反應交聯。 8. 根據申請專利範圍第5項之製造矽酮黏著劑薄片之方 法，其中該襯底物中至少一個包含與該選自由氧及硫組成 之群之可交聯矽酮組合物原子接觸之該面。 9 .根據申請專利範圍第8項之製造矽酮黏著劑薄片之方 法，其中該氧原子為選自由羰基，烷氧基，酯基，及醚基 組成之群之取代基。 1 0 .根據申請專利範圍第8項之製造矽酮黏著劑薄片之方 法，其中該硫原子為選自由楓基團及硫醚基團組成之群之 取代基。
O:\65\65237-931224.ptc 第41頁
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Publication number Priority date Publication date Assignee Title
US6551676B1 (en) * 1998-09-04 2003-04-22 Dow Corning Toray Silicone Company, Ltd. Silicone-based adhesive sheet method for manufacturing same and semiconductor device
JP4755330B2 (ja) * 2000-09-26 2011-08-24 東レ・ダウコーニング株式会社 オルガノポリシロキサン、およびその製造方法
TWI250190B (en) * 2001-10-03 2006-03-01 Dow Corning Toray Silicone Adhesive sheet of cross-linked silicone, method of manufacturing thereof, and device
JP2004043814A (ja) * 2002-07-15 2004-02-12 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置
WO2005021258A1 (ja) * 2003-09-01 2005-03-10 Daicel Chemical Industries, Ltd. 表面保護フィルム及びその製造方法
US7232957B2 (en) * 2003-09-25 2007-06-19 Sanyo Electric Co., Ltd. Hybrid integrated circuit device and method of manufacturing the same
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8173519B2 (en) 2006-03-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4697243B2 (ja) * 2008-02-22 2011-06-08 セイコーエプソン株式会社 接合体および接合方法
US8222145B2 (en) * 2009-09-24 2012-07-17 Dupont Air Products Nanomaterials, Llc Method and composition for chemical mechanical planarization of a metal-containing substrate
JP6024638B2 (ja) * 2013-10-10 2016-11-16 信越化学工業株式会社 シリコーン粘着剤組成物、密着向上剤の製造方法及び粘着性物品
DE102014219095A1 (de) * 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
KR101726925B1 (ko) * 2014-11-19 2017-04-14 삼성에스디아이 주식회사 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
KR20230106750A (ko) 2016-07-29 2023-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
TWI753868B (zh) 2016-08-05 2022-02-01 日商半導體能源研究所股份有限公司 剝離方法、顯示裝置、顯示模組及電子裝置
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置
WO2018042284A1 (en) 2016-08-31 2018-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10923350B2 (en) 2016-08-31 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10369664B2 (en) 2016-09-23 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN113631660B (zh) 2019-03-29 2023-07-07 陶氏东丽株式会社 固化性有机硅组合物、其固化物及其制造方法
EP3950844A4 (en) 2019-03-29 2022-12-21 Dow Toray Co., Ltd. CURABLE SILICONE COMPOSITION, ASSOCIATED CURED ARTICLE AND METHOD FOR MAKING THIS COMPOSITION
CN112194995A (zh) * 2020-09-15 2021-01-08 苏州桐力光电股份有限公司 一种低介电常数oca光学材料及制备方法
EP4397720A1 (en) 2021-08-31 2024-07-10 Dow Toray Co., Ltd. Curable silicone composition, cured object therefrom, and method for producing said cured object
CN117881748A (zh) 2021-08-31 2024-04-12 陶氏东丽株式会社 固化性有机硅组合物、其固化物及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3420473B2 (ja) * 1997-04-30 2003-06-23 東レ・ダウコーニング・シリコーン株式会社 シリコーン系接着性シート、その製造方法、および半導体装置
DE69816395T2 (de) * 1997-10-13 2004-05-13 Dow Corning Toray Silicone Company, Ltd. Silatranderivate und diese enthaltende härtbare Silikonzusammensetzungen
US5945555A (en) * 1997-11-28 1999-08-31 Dow Corning Toray Silicone Co., Ltd. Silatrane derivative, method for manufacturing same, adhesion promoter, and curable silicone composition

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JP2001019933A (ja) 2001-01-23
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