TWI265209B - Method and device for depositing organic layers using organic vapour phase deposition (OVPD) - Google Patents

Method and device for depositing organic layers using organic vapour phase deposition (OVPD)

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Publication number
TWI265209B
TWI265209B TW090123896A TW90123896A TWI265209B TW I265209 B TWI265209 B TW I265209B TW 090123896 A TW090123896 A TW 090123896A TW 90123896 A TW90123896 A TW 90123896A TW I265209 B TWI265209 B TW I265209B
Authority
TW
Taiwan
Prior art keywords
starting material
carrier gas
ovpd
source
organic layers
Prior art date
Application number
TW090123896A
Other languages
English (en)
Inventor
Holger Jurgensen
Gerd Strauch
Markus Schwambera
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Application granted granted Critical
Publication of TWI265209B publication Critical patent/TWI265209B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
TW090123896A 2000-09-29 2001-09-27 Method and device for depositing organic layers using organic vapour phase deposition (OVPD) TWI265209B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10048759A DE10048759A1 (de) 2000-09-29 2000-09-29 Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD

Publications (1)

Publication Number Publication Date
TWI265209B true TWI265209B (en) 2006-11-01

Family

ID=7658410

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090123896A TWI265209B (en) 2000-09-29 2001-09-27 Method and device for depositing organic layers using organic vapour phase deposition (OVPD)

Country Status (8)

Country Link
US (1) US6962624B2 (zh)
EP (1) EP1320636B9 (zh)
JP (1) JP2004510058A (zh)
KR (1) KR20030038756A (zh)
AU (1) AU2001293834A1 (zh)
DE (2) DE10048759A1 (zh)
TW (1) TWI265209B (zh)
WO (1) WO2002027064A1 (zh)

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CN103930588A (zh) * 2011-06-22 2014-07-16 艾克斯特朗欧洲公司 用于气相沉积的方法和装置
TWI596233B (zh) * 2011-06-22 2017-08-21 愛思強歐洲公司 氣相沉積系統及供應頭

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US8535759B2 (en) 2001-09-04 2013-09-17 The Trustees Of Princeton University Method and apparatus for depositing material using a dynamic pressure
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DE10256850A1 (de) * 2002-12-04 2004-06-24 Basf Ag Verfahren und Aufdampfung von Verbindung(en) auf einen Träger
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WO2005086962A2 (en) * 2004-03-11 2005-09-22 The University Of Vermont And State Agricultural College System and method for fabricating a crystalline thin structure
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US8986780B2 (en) * 2004-11-19 2015-03-24 Massachusetts Institute Of Technology Method and apparatus for depositing LED organic film
DE102004061095A1 (de) * 2004-12-18 2006-06-22 Aixtron Ag Vorrichtung zur temperierten Aufbewahrung eines Behälters
DE102005030862B4 (de) * 2005-07-01 2009-12-24 Sintec Keramik Gmbh Erstbenetzungshilfsmaterial für einen Verdampferkörper, seine Verwendung zum Herrichten der Verdampferfläche eines Verdampferkörpers und ein elektrisch beheizbarer keramischer Verdampferkörper
JP4601535B2 (ja) * 2005-09-09 2010-12-22 株式会社リンテック 低温度で液体原料を気化させることのできる気化器
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DE102008045982A1 (de) 2008-09-05 2010-03-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von nanoskaligen Netzwerken auf Oberflächen
DE102008051012B4 (de) 2008-10-13 2015-07-16 Novaled Ag Lichtemittierende Vorrichtung und Verfahren zum Herstellen
JP5779171B2 (ja) 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US8491720B2 (en) 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
CN102449743A (zh) * 2009-04-24 2012-05-09 应用材料公司 用于后续高温第三族沉积的基材预处理
US20100273291A1 (en) 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
US8801856B2 (en) 2009-09-08 2014-08-12 Universal Display Corporation Method and system for high-throughput deposition of patterned organic thin films
EP2496733B1 (en) 2009-11-02 2021-08-04 Sigma-Aldrich Co. LLC Method for evaporation
KR101074810B1 (ko) * 2009-12-23 2011-10-19 삼성모바일디스플레이주식회사 캐리어 가스 공급 구조가 개선된 증착 장치 및 그것을 이용한 유기 발광 디스플레이 장치 제조방법
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CN103930588A (zh) * 2011-06-22 2014-07-16 艾克斯特朗欧洲公司 用于气相沉积的方法和装置
CN103930588B (zh) * 2011-06-22 2016-08-17 艾克斯特朗欧洲公司 用于气相沉积的方法和装置
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TWI596233B (zh) * 2011-06-22 2017-08-21 愛思強歐洲公司 氣相沉積系統及供應頭

Also Published As

Publication number Publication date
DE50102071D1 (de) 2004-05-27
EP1320636B9 (de) 2004-10-13
US6962624B2 (en) 2005-11-08
EP1320636A1 (de) 2003-06-25
DE10048759A1 (de) 2002-04-11
AU2001293834A1 (en) 2002-04-08
WO2002027064A1 (de) 2002-04-04
KR20030038756A (ko) 2003-05-16
US20030192471A1 (en) 2003-10-16
EP1320636B1 (de) 2004-04-21
JP2004510058A (ja) 2004-04-02

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