AU2001293834A1 - Method and device for depositing especially, organic layers by organic vapor phase deposition - Google Patents
Method and device for depositing especially, organic layers by organic vapor phase depositionInfo
- Publication number
- AU2001293834A1 AU2001293834A1 AU2001293834A AU9383401A AU2001293834A1 AU 2001293834 A1 AU2001293834 A1 AU 2001293834A1 AU 2001293834 A AU2001293834 A AU 2001293834A AU 9383401 A AU9383401 A AU 9383401A AU 2001293834 A1 AU2001293834 A1 AU 2001293834A1
- Authority
- AU
- Australia
- Prior art keywords
- vapor phase
- organic
- phase deposition
- organic layers
- depositing especially
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10048759A DE10048759A1 (en) | 2000-09-29 | 2000-09-29 | Method and device for separating organic layers in particular by means of OVPD |
DE10048759 | 2000-09-29 | ||
PCT/EP2001/010961 WO2002027064A1 (en) | 2000-09-29 | 2001-09-22 | Method and device for depositing especially, organic layers by organic vapor phase deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001293834A1 true AU2001293834A1 (en) | 2002-04-08 |
Family
ID=7658410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001293834A Abandoned AU2001293834A1 (en) | 2000-09-29 | 2001-09-22 | Method and device for depositing especially, organic layers by organic vapor phase deposition |
Country Status (8)
Country | Link |
---|---|
US (1) | US6962624B2 (en) |
EP (1) | EP1320636B9 (en) |
JP (1) | JP2004510058A (en) |
KR (1) | KR20030038756A (en) |
AU (1) | AU2001293834A1 (en) |
DE (2) | DE10048759A1 (en) |
TW (1) | TWI265209B (en) |
WO (1) | WO2002027064A1 (en) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7404862B2 (en) | 2001-09-04 | 2008-07-29 | The Trustees Of Princeton University | Device and method for organic vapor jet deposition |
US7431968B1 (en) | 2001-09-04 | 2008-10-07 | The Trustees Of Princeton University | Process and apparatus for organic vapor jet deposition |
US8535759B2 (en) | 2001-09-04 | 2013-09-17 | The Trustees Of Princeton University | Method and apparatus for depositing material using a dynamic pressure |
TWI273642B (en) * | 2002-04-19 | 2007-02-11 | Ulvac Inc | Film-forming apparatus and film-forming method |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
KR100473806B1 (en) * | 2002-09-28 | 2005-03-10 | 한국전자통신연구원 | Method and apparatus using large area organic vapor deposition for organic thin film and organic devices |
DE10256850A1 (en) * | 2002-12-04 | 2004-06-24 | Basf Ag | Process and vapor deposition of compound (s) on a support |
WO2004105095A2 (en) * | 2003-05-16 | 2004-12-02 | Svt Associates Inc. | Thin-film deposition evaporator |
KR20050004379A (en) * | 2003-07-02 | 2005-01-12 | 삼성전자주식회사 | Gas supplying apparatus for atomic layer deposition |
US20080138927A1 (en) * | 2004-03-11 | 2008-06-12 | The University Of Vermont And State Agricultural College | Systems and Methods for Fabricating Crystalline Thin Structures Using Meniscal Growth Techniques |
WO2005086962A2 (en) * | 2004-03-11 | 2005-09-22 | The University Of Vermont And State Agricultural College | System and method for fabricating a crystalline thin structure |
US7238389B2 (en) * | 2004-03-22 | 2007-07-03 | Eastman Kodak Company | Vaporizing fluidized organic materials |
US8986780B2 (en) * | 2004-11-19 | 2015-03-24 | Massachusetts Institute Of Technology | Method and apparatus for depositing LED organic film |
DE102004061095A1 (en) * | 2004-12-18 | 2006-06-22 | Aixtron Ag | Device for the temperature-controlled storage of a container |
DE102005030862B4 (en) * | 2005-07-01 | 2009-12-24 | Sintec Keramik Gmbh | First wetting auxiliary material for an evaporator body, its use for preparing the evaporator surface of an evaporator body and an electrically heatable ceramic evaporator body |
JP4601535B2 (en) * | 2005-09-09 | 2010-12-22 | 株式会社リンテック | A vaporizer capable of vaporizing liquid raw materials at low temperatures |
US7993459B2 (en) * | 2005-10-24 | 2011-08-09 | Global Oled Technology Llc | Delivering particulate material to a vaporization zone |
GB2432371B (en) | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
DE102006022534A1 (en) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Source container one VPE reactor |
EP2065877B1 (en) * | 2006-09-28 | 2012-12-05 | Phoenix Electric Co., Ltd. | Image projection system by means of direct current type high voltage discharge lamp |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
DE102008045982A1 (en) | 2008-09-05 | 2010-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Functionalizing surfaces comprises activating surface to form reactive groups on surface, depositing crosslinkable component e.g. oxirane by e.g. polyaddition and chemically bonding to reactive groups of surface, followed by crosslinking |
DE102008051012B4 (en) | 2008-10-13 | 2015-07-16 | Novaled Ag | Light-emitting device and method for manufacturing |
JP5779171B2 (en) | 2009-03-26 | 2015-09-16 | トゥー‐シックス・インコーポレイテッド | Method and apparatus for sublimation growth of SiC single crystal |
US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
US8491720B2 (en) | 2009-04-10 | 2013-07-23 | Applied Materials, Inc. | HVPE precursor source hardware |
CN102449743A (en) * | 2009-04-24 | 2012-05-09 | 应用材料公司 | Substrate pretreatment for subsequent high temperature group III depositions |
US20100273291A1 (en) | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
CN102414797A (en) * | 2009-04-29 | 2012-04-11 | 应用材料公司 | Method of forming in-situ pre-GaN deposition layer in HVPE |
US8801856B2 (en) | 2009-09-08 | 2014-08-12 | Universal Display Corporation | Method and system for high-throughput deposition of patterned organic thin films |
EP2496733B1 (en) | 2009-11-02 | 2021-08-04 | Sigma-Aldrich Co. LLC | Method for evaporation |
KR101074810B1 (en) * | 2009-12-23 | 2011-10-19 | 삼성모바일디스플레이주식회사 | Vapor deposition apparatus providing improved carrier gas supplying structure and the OLED manufacturing method using the same |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
TWI534291B (en) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | Showerhead assembly |
JP2012248803A (en) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | Metal chloride gas generator and metal chloride gas generation method, and hydride vapor phase epitaxial growth apparatus, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light-emitting diode, manufacturing method of nitride semiconductor self-supporting substrate, and nitride semiconductor crystal |
KR101709921B1 (en) * | 2011-06-22 | 2017-02-24 | 아익스트론 에스이 | Vapor deposition material source and method for making same |
KR101711504B1 (en) * | 2011-06-22 | 2017-03-02 | 아익스트론 에스이 | Vapor deposition system and supply head |
JP5877245B2 (en) * | 2011-06-22 | 2016-03-02 | アイクストロン、エスイー | Vapor deposition method and vapor deposition apparatus |
KR101389011B1 (en) * | 2012-03-28 | 2014-04-24 | 주식회사 유니텍스 | Source container and reactor for vapor phase deposition |
KR102061093B1 (en) | 2012-05-25 | 2019-12-31 | 솔 발테익스 에이비 | Concentric flow reactor |
KR101313877B1 (en) * | 2012-07-06 | 2013-10-01 | 주식회사 유니텍스 | Source container and reactor for vapor phase deposition |
DE102012215708A1 (en) * | 2012-09-05 | 2014-03-06 | Osram Opto Semiconductors Gmbh | STORAGE CONTAINER FOR A COATING SYSTEM AND COATING SYSTEM |
US9951420B2 (en) | 2014-11-10 | 2018-04-24 | Sol Voltaics Ab | Nanowire growth system having nanoparticles aerosol generator |
KR102369676B1 (en) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | Apparatus and method for manufacturing a display apparatus |
DE102017112668A1 (en) * | 2017-06-08 | 2018-12-13 | Aixtron Se | Method for depositing OLEDs |
KR102344996B1 (en) * | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | Unit for supplying precursor, substrate processing apparatus and method for manufacturing semiconductor device using the same |
KR102218628B1 (en) * | 2017-10-31 | 2021-02-22 | 한국세라믹기술원 | Source gas supply device for coating of carbonized layer |
US10930494B2 (en) | 2019-04-09 | 2021-02-23 | Swift Solar Inc. | Vapor phase transport system and method for depositing perovskite semiconductors |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2704727A (en) * | 1951-10-08 | 1955-03-22 | Ohio Commw Eng Co | Method of deposition of non-conductive copper coatings from vapor phase |
DE3801147A1 (en) * | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | DEVICE FOR GENERATING A GAS FLOW ENRICHED WITH THE VAPOR OF A LITTLE VOLATILE FABRIC |
DE3907963A1 (en) * | 1989-03-11 | 1990-09-13 | Philips Patentverwaltung | METHOD AND DEVICE FOR DOSING A VAPOROUS SUBSTANCE IN A REACTOR |
US5186120A (en) * | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
US5227340A (en) * | 1990-02-05 | 1993-07-13 | Motorola, Inc. | Process for fabricating semiconductor devices using a solid reactant source |
FR2727322B1 (en) * | 1994-11-30 | 1996-12-27 | Kodak Pathe | METHOD FOR SUBLIMATING A SOLID MATERIAL AND DEVICE FOR CARRYING OUT THE METHOD |
US5554220A (en) * | 1995-05-19 | 1996-09-10 | The Trustees Of Princeton University | Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities |
JPH1025576A (en) * | 1996-04-05 | 1998-01-27 | Dowa Mining Co Ltd | Sublimation method of raw material compound in cvd film formation method |
US6337102B1 (en) * | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
-
2000
- 2000-09-29 DE DE10048759A patent/DE10048759A1/en not_active Withdrawn
-
2001
- 2001-09-22 JP JP2002530824A patent/JP2004510058A/en active Pending
- 2001-09-22 DE DE50102071T patent/DE50102071D1/en not_active Expired - Lifetime
- 2001-09-22 WO PCT/EP2001/010961 patent/WO2002027064A1/en active IP Right Grant
- 2001-09-22 EP EP01974282A patent/EP1320636B9/en not_active Expired - Lifetime
- 2001-09-22 AU AU2001293834A patent/AU2001293834A1/en not_active Abandoned
- 2001-09-22 KR KR10-2003-7004049A patent/KR20030038756A/en not_active Application Discontinuation
- 2001-09-27 TW TW090123896A patent/TWI265209B/en not_active IP Right Cessation
-
2003
- 2003-03-28 US US10/402,220 patent/US6962624B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE50102071D1 (en) | 2004-05-27 |
EP1320636B9 (en) | 2004-10-13 |
US6962624B2 (en) | 2005-11-08 |
EP1320636A1 (en) | 2003-06-25 |
DE10048759A1 (en) | 2002-04-11 |
TWI265209B (en) | 2006-11-01 |
WO2002027064A1 (en) | 2002-04-04 |
KR20030038756A (en) | 2003-05-16 |
US20030192471A1 (en) | 2003-10-16 |
EP1320636B1 (en) | 2004-04-21 |
JP2004510058A (en) | 2004-04-02 |
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