TWI257134B - Semiconductor device and manufacturing method thereof, and liquid crystal module and semiconductor module having the same - Google Patents

Semiconductor device and manufacturing method thereof, and liquid crystal module and semiconductor module having the same

Info

Publication number
TWI257134B
TWI257134B TW094108808A TW94108808A TWI257134B TW I257134 B TWI257134 B TW I257134B TW 094108808 A TW094108808 A TW 094108808A TW 94108808 A TW94108808 A TW 94108808A TW I257134 B TWI257134 B TW I257134B
Authority
TW
Taiwan
Prior art keywords
sealing
resin
semiconductor element
module
semiconductor
Prior art date
Application number
TW094108808A
Other languages
English (en)
Other versions
TW200539359A (en
Inventor
Yasushi Shohji
Kenji Toyosawa
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200539359A publication Critical patent/TW200539359A/zh
Application granted granted Critical
Publication of TWI257134B publication Critical patent/TWI257134B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
TW094108808A 2004-03-22 2005-03-22 Semiconductor device and manufacturing method thereof, and liquid crystal module and semiconductor module having the same TWI257134B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004083656 2004-03-22
JP2005077974A JP2005311321A (ja) 2004-03-22 2005-03-17 半導体装置およびその製造方法、並びに、該半導体装置を備えた液晶モジュールおよび半導体モジュール

Publications (2)

Publication Number Publication Date
TW200539359A TW200539359A (en) 2005-12-01
TWI257134B true TWI257134B (en) 2006-06-21

Family

ID=34985388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108808A TWI257134B (en) 2004-03-22 2005-03-22 Semiconductor device and manufacturing method thereof, and liquid crystal module and semiconductor module having the same

Country Status (5)

Country Link
US (1) US20050206016A1 (zh)
JP (1) JP2005311321A (zh)
KR (1) KR100793468B1 (zh)
CN (1) CN100386856C (zh)
TW (1) TWI257134B (zh)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4737370B2 (ja) * 2004-10-29 2011-07-27 セイコーエプソン株式会社 半導体装置の製造方法
JP2008016630A (ja) * 2006-07-06 2008-01-24 Matsushita Electric Ind Co Ltd プリント配線板およびその製造方法
JP5428123B2 (ja) * 2006-08-16 2014-02-26 富士通セミコンダクター株式会社 半導体装置及びその製造方法
EP1914798A3 (en) * 2006-10-18 2009-07-29 Panasonic Corporation Semiconductor Mounting Substrate and Method for Manufacturing the Same
JP5368809B2 (ja) 2009-01-19 2013-12-18 ローム株式会社 Ｌｅｄモジュールの製造方法およびｌｅｄモジュール
JP5279631B2 (ja) * 2009-06-23 2013-09-04 新光電気工業株式会社 電子部品内蔵配線基板と電子部品内蔵配線基板の製造方法
JP5360221B2 (ja) * 2009-09-16 2013-12-04 株式会社村田製作所 電子部品内蔵モジュール
US8237293B2 (en) * 2009-11-25 2012-08-07 Freescale Semiconductor, Inc. Semiconductor package with protective tape
JP2012009713A (ja) * 2010-06-25 2012-01-12 Shinko Electric Ind Co Ltd 半導体パッケージおよび半導体パッケージの製造方法
JP5563917B2 (ja) 2010-07-22 2014-07-30 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置及びその製造方法
CN103119505B (zh) * 2010-09-27 2016-01-20 夏普株式会社 液晶模块和电子设备
JP5214753B2 (ja) * 2011-02-23 2013-06-19 シャープ株式会社 半導体装置およびその製造方法
JP6441025B2 (ja) 2013-11-13 2018-12-19 株式会社東芝 半導体チップの製造方法
TWI671812B (zh) * 2013-11-13 2019-09-11 東芝股份有限公司 半導體晶片之製造方法、半導體晶片及半導體裝置
US9406583B2 (en) * 2013-11-21 2016-08-02 Dongbu Hitek Co., Ltd. COF type semiconductor package and method of manufacturing the same
WO2015076457A1 (ko) * 2013-11-21 2015-05-28 주식회사 동부하이텍 씨오에프형 반도체 패키지 및 그 제조 방법
KR101677322B1 (ko) * 2014-04-16 2016-11-17 주식회사 동부하이텍 반도체 패키지 및 이를 제조하는 방법
KR101474690B1 (ko) * 2014-04-24 2014-12-17 주식회사 동부하이텍 반도체 소자들을 패키징하는 방법 및 이를 수행하기 위한 장치
KR101677323B1 (ko) * 2014-05-09 2016-11-17 주식회사 동부하이텍 반도체 소자들을 패키징하는 방법 및 이를 수행하기 위한 장치
KR101666711B1 (ko) * 2014-05-09 2016-10-14 주식회사 동부하이텍 반도체 소자들을 패키징하는 방법 및 이를 수행하기 위한 장치
JP6875857B2 (ja) * 2014-05-15 2021-05-26 ノヴァルング ゲーエムベーハー 医療技術的測定システム、及び前記測定システムの製造方法
EP3590564A1 (de) 2014-05-15 2020-01-08 novalung GmbH Medizintechnische messvorrichtung und mess-verfahren
KR101691485B1 (ko) * 2014-07-11 2017-01-02 인텔 코포레이션 굽힘 및 펼침이 가능한 전자 장치들 및 방법들
KR102308384B1 (ko) * 2015-01-06 2021-10-01 매그나칩 반도체 유한회사 방열 반도체 소자 패키지 및 그 제조 방법
JP6202020B2 (ja) * 2015-02-25 2017-09-27 トヨタ自動車株式会社 半導体モジュール、半導体装置、及び、半導体装置の製造方法
JP6065135B2 (ja) * 2015-04-02 2017-01-25 日亜化学工業株式会社 発光装置
EP3159026A1 (de) 2015-10-23 2017-04-26 novalung GmbH Zwischenelement für eine medizintechnische extrakorporale fluidleitung, medizintechnisches extrakorporales fluidsystem und verfahren zum messen eines in einem medizintechnischen extrakorporalen fluidsystem geführten fluid des menschlichen oder tierischen körpers enthaltenen gases
CN106997882B (zh) * 2016-01-26 2020-05-22 昆山工研院新型平板显示技术中心有限公司 一种邦定结构、具有该邦定结构的柔性屏体及其制备方法
KR20180073349A (ko) * 2016-12-22 2018-07-02 엘지디스플레이 주식회사 유기 발광 표시 장치
CN107357068A (zh) * 2017-07-21 2017-11-17 武汉华星光电技术有限公司 一种窄边框显示面板及制造方法
TWI697079B (zh) * 2019-03-06 2020-06-21 南茂科技股份有限公司 薄膜覆晶封裝結構

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682765B2 (ja) * 1985-12-25 1994-10-19 株式会社日立製作所 液晶表示素子
US5866953A (en) * 1996-05-24 1999-02-02 Micron Technology, Inc. Packaged die on PCB with heat sink encapsulant
JPH1092981A (ja) 1996-09-17 1998-04-10 Toshiba Corp 半導体装置の導電性モールドパッケージ
JPH10223819A (ja) * 1997-02-13 1998-08-21 Nec Kyushu Ltd 半導体装置
JPH11271795A (ja) 1998-03-25 1999-10-08 Toshiba Electronic Engineering Corp テープキャリアパッケージ
JP2000277564A (ja) * 1999-03-23 2000-10-06 Casio Comput Co Ltd 半導体装置及びその製造方法
JP4075306B2 (ja) * 2000-12-19 2008-04-16 日立電線株式会社 配線基板、ｌｇａ型半導体装置、及び配線基板の製造方法
SG121707A1 (en) * 2002-03-04 2006-05-26 Micron Technology Inc Method and apparatus for flip-chip packaging providing testing capability
JP3666462B2 (ja) * 2002-03-11 2005-06-29 セイコーエプソン株式会社 半導体装置の製造方法
US7057277B2 (en) * 2003-04-22 2006-06-06 Industrial Technology Research Institute Chip package structure

Also Published As

Publication number Publication date
JP2005311321A (ja) 2005-11-04
TW200539359A (en) 2005-12-01
CN100386856C (zh) 2008-05-07
US20050206016A1 (en) 2005-09-22
CN1674241A (zh) 2005-09-28
KR20060044486A (ko) 2006-05-16
KR100793468B1 (ko) 2008-01-14

Similar Documents

Publication Publication Date Title
TWI257134B (en) Semiconductor device and manufacturing method thereof, and liquid crystal module and semiconductor module having the same
TW200721419A (en) Semiconductor IC-embedded substrate and method for manufacturing same
TW200707598A (en) A method of manufacturing a semiconductor device
TW200731518A (en) Semiconductor device and manufacturing method of the same
TWI264133B (en) Optical semiconductor device, optical connector and electronic equipment
TW200613123A (en) Transparent member, optical device using transparent member and method of manufacturing optical device
TW200705619A (en) Semiconductor assembly including chip scale package and second substrate and having exposed substrate surfaces on upper and lower sides
TW200629489A (en) Optical semiconductor device, method for fabricating the same, lead frame and electronic equipment
TW200518354A (en) Device package and methods for the fabrication and testing thereof
TW200727461A (en) Semiconductor device and production method thereof
TW200520042A (en) Semiconductor module containing circuit elements, method for manufacture thereof, and application thereof
TW200731900A (en) Method for producing a circuit substrate and a circuit board and a method for producing the same
TW200739190A (en) Electro-optical device, manufacturing method thereof, and electronic apparatus
ATE412251T1 (de) Herstellungsverfahren für halbleitergehäuse und mit diesem verfahren hergestellte gehäuse
WO2007032197A3 (en) Semiconductor device and method of manufacturing the same
TW200511458A (en) Flip-chip type semiconductor device, production process for manufacturing such flip-chip type semiconductor device, and production process for manufacturing electronic product using such flip-chip type semiconductor device
TW200719468A (en) Package, package module and manufacturing method of the package
TW200644104A (en) Manufacturing method for electronic component, electronic component, and electronic equipment
TW200733367A (en) Manufacturing method of semiconductor device
TW200614403A (en) Method of manufacturing semiconductor device, semiconductor device, and mounting structure of semiconductor device
WO2009061886A3 (en) Tensile strained ge for electronic and optoelectronic applications
TW200635027A (en) Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus
ATE252225T1 (de) Verfahren zum erzeugen eines mikro- elektromechanischen elements
TW200625476A (en) Semiconductor device and manufacturing method thereof
TW200614458A (en) Flip chip bga process and package with stiffener ring

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees