TWI248562B - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing method Download PDFInfo
- Publication number
- TWI248562B TWI248562B TW093137213A TW93137213A TWI248562B TW I248562 B TWI248562 B TW I248562B TW 093137213 A TW093137213 A TW 093137213A TW 93137213 A TW93137213 A TW 93137213A TW I248562 B TWI248562 B TW I248562B
- Authority
- TW
- Taiwan
- Prior art keywords
- article
- filling gas
- substrate
- pressure
- support
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000005855 radiation Effects 0.000 claims abstract description 34
- 238000005286 illumination Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 31
- 238000001459 lithography Methods 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 74
- 235000012431 wafers Nutrition 0.000 description 18
- 238000000206 photolithography Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035935 pregnancy Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/734,641 US6897945B1 (en) | 2003-12-15 | 2003-12-15 | Lithographic apparatus and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200523686A TW200523686A (en) | 2005-07-16 |
| TWI248562B true TWI248562B (en) | 2006-02-01 |
Family
ID=34552774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093137213A TWI248562B (en) | 2003-12-15 | 2004-12-02 | Lithographic apparatus and device manufacturing method |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6897945B1 (enExample) |
| EP (1) | EP1548502A1 (enExample) |
| JP (2) | JP4477480B2 (enExample) |
| KR (1) | KR100644419B1 (enExample) |
| CN (2) | CN102645852A (enExample) |
| SG (1) | SG112968A1 (enExample) |
| TW (1) | TWI248562B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI407498B (zh) * | 2008-09-30 | 2013-09-01 | Mitsubishi Heavy Ind Ltd | 晶圓接合裝置及晶圓接合方法 |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004351527A (ja) * | 2003-05-27 | 2004-12-16 | Koganei Corp | 吸着検出方法および吸着検出装置 |
| EP2267535A1 (en) * | 2003-11-05 | 2010-12-29 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
| US6897945B1 (en) * | 2003-12-15 | 2005-05-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050223973A1 (en) * | 2004-03-30 | 2005-10-13 | Infineon Technologies Ag | EUV lithography system and chuck for releasing reticle in a vacuum isolated environment |
| KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7196775B2 (en) * | 2004-08-23 | 2007-03-27 | Asml Holding N.V. | Patterned mask holding device and method using two holding systems |
| US7041989B1 (en) | 2004-10-22 | 2006-05-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20090006064A (ko) * | 2006-04-05 | 2009-01-14 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 스테이지 제어 방법, 노광 방법및 디바이스 제조 방법 |
| US20070268476A1 (en) * | 2006-05-19 | 2007-11-22 | Nikon Corporation | Kinematic chucks for reticles and other planar bodies |
| US20070292245A1 (en) * | 2006-05-25 | 2007-12-20 | Nikon Corporation | Stage assembly with secure device holder |
| US7508494B2 (en) * | 2006-12-22 | 2009-03-24 | Asml Netherlands B.V. | Lithographic apparatus and a subtrate table for exciting a shockwave in a substrate |
| US20080180873A1 (en) * | 2007-01-31 | 2008-07-31 | Applied Materials, Inc. | Securing a substrate to an electrostatic chuck |
| FR2912375B1 (fr) * | 2007-02-14 | 2009-12-18 | Eurocopter France | Verin electrique de commande de vol pour aeronef |
| TWI541615B (zh) | 2007-07-13 | 2016-07-11 | 瑪波微影Ip公司 | 在微影裝置中交換晶圓的方法 |
| US8705010B2 (en) * | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
| TWI337154B (en) * | 2008-04-17 | 2011-02-11 | Gudeng Prec Industral Co Ltd | Gas filling apparatus and gas filling port thereof |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| JP5470601B2 (ja) * | 2009-03-02 | 2014-04-16 | 新光電気工業株式会社 | 静電チャック |
| SG176059A1 (en) | 2009-05-15 | 2011-12-29 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| JP5960154B2 (ja) * | 2010-12-08 | 2016-08-02 | エーエスエムエル ホールディング エヌ.ブイ. | 静電クランプ、リソグラフィ装置、および静電クランプの製造方法 |
| NL2009689A (en) * | 2011-12-01 | 2013-06-05 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
| NL2009858A (en) | 2011-12-27 | 2013-07-01 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, and device manufacturing method. |
| CN103576464B (zh) * | 2012-07-20 | 2016-03-09 | 上海微电子装备有限公司 | 一种推顶机构及具有该推顶机构的光刻装置 |
| JP2014086701A (ja) * | 2012-10-26 | 2014-05-12 | Canon Inc | 保持装置、リソグラフィ装置及び物品の製造方法 |
| NL2011592A (en) | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Compensation for patterning device deformation. |
| CN108780773B (zh) * | 2016-02-10 | 2022-10-21 | 恩特格里斯公司 | 具有改善粒子性能的晶片接触表面突部轮廓 |
| CN107272351A (zh) * | 2017-07-28 | 2017-10-20 | 武汉华星光电技术有限公司 | 承载装置及具有该承载装置的曝光设备 |
| JP7104531B2 (ja) * | 2018-03-19 | 2022-07-21 | キヤノン株式会社 | 基板保持装置および基板処理装置 |
| EP3575873A1 (en) | 2018-05-28 | 2019-12-04 | ASML Netherlands B.V. | Particle beam apparatus |
| EP3921701A1 (en) * | 2019-02-08 | 2021-12-15 | ASML Netherlands B.V. | Component for use in a lithographic apparatus, method of protecting a component and method of protecting tables in a lithographic apparatus |
| EP3832391A1 (en) * | 2019-12-03 | 2021-06-09 | ASML Netherlands B.V. | Clamp assembly |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| GB2106325A (en) | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
| US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
| GB2147459A (en) * | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| DE3471827D1 (en) * | 1983-09-30 | 1988-07-07 | Philips Electronic Associated | Electrostatic chuck and loading method |
| JPS60235423A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | 半導体製造装置 |
| JPS6272139A (ja) * | 1985-09-26 | 1987-04-02 | Hitachi Electronics Eng Co Ltd | ウエハ吸着装置 |
| FR2661039B1 (fr) * | 1990-04-12 | 1997-04-30 | Commissariat Energie Atomique | Porte-substrat electrostatique. |
| JP3238925B2 (ja) | 1990-11-17 | 2001-12-17 | 株式会社東芝 | 静電チャック |
| US5350479A (en) | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
| EP0635870A1 (en) | 1993-07-20 | 1995-01-25 | Applied Materials, Inc. | An electrostatic chuck having a grooved surface |
| KR100430643B1 (ko) | 1994-01-31 | 2004-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 두께가 균일한 절연체 막을 갖는 정전기 척 |
| TW288253B (enExample) * | 1994-02-03 | 1996-10-11 | Aneruba Kk | |
| JP3671379B2 (ja) * | 1994-02-03 | 2005-07-13 | アネルバ株式会社 | 静電吸着された被処理基板の離脱機構を持つプラズマ処理装置および静電吸着された被処理基板の離脱方法 |
| JPH0878512A (ja) * | 1994-09-09 | 1996-03-22 | Hitachi Ltd | 静電吸着装置及び方法 |
| JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
| JP3639686B2 (ja) * | 1996-01-31 | 2005-04-20 | キヤノン株式会社 | 基板の保持装置とこれを用いた露光装置、及びデバイスの製造方法 |
| US5923408A (en) * | 1996-01-31 | 1999-07-13 | Canon Kabushiki Kaisha | Substrate holding system and exposure apparatus using the same |
| US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
| JP2000100895A (ja) * | 1998-09-18 | 2000-04-07 | Nikon Corp | 基板の搬送装置、基板の保持装置、及び基板処理装置 |
| JP2000156400A (ja) * | 1998-11-19 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 基板の分離方法および分離装置 |
| JP4064557B2 (ja) * | 1999-01-07 | 2008-03-19 | 松下電器産業株式会社 | 真空処理装置の基板取り外し制御方法 |
| US6215642B1 (en) * | 1999-03-11 | 2001-04-10 | Nikon Corporation Of Japan | Vacuum compatible, deformable electrostatic chuck with high thermal conductivity |
| JP2001196290A (ja) * | 2000-01-13 | 2001-07-19 | Nikon Corp | 静電チャック、ステージ、基板処理装置、荷電粒子線露光装置及びデバイス製造方法 |
| JP2001267400A (ja) * | 2000-03-16 | 2001-09-28 | Kyocera Corp | ウエハ支持部材 |
| JP2002009139A (ja) * | 2000-06-20 | 2002-01-11 | Nikon Corp | 静電チャック |
| JP2002082445A (ja) * | 2000-07-07 | 2002-03-22 | Nikon Corp | ステージ装置及び露光装置 |
| JP4312394B2 (ja) * | 2001-01-29 | 2009-08-12 | 日本碍子株式会社 | 静電チャックおよび基板処理装置 |
| US6628503B2 (en) * | 2001-03-13 | 2003-09-30 | Nikon Corporation | Gas cooled electrostatic pin chuck for vacuum applications |
| JP2002313902A (ja) * | 2001-04-18 | 2002-10-25 | Canon Inc | 静電チャック、該静電チャックから基板を離脱する方法 |
| US7105836B2 (en) | 2002-10-18 | 2006-09-12 | Asml Holding N.V. | Method and apparatus for cooling a reticle during lithographic exposure |
| US6897945B1 (en) * | 2003-12-15 | 2005-05-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2003
- 2003-12-15 US US10/734,641 patent/US6897945B1/en not_active Expired - Lifetime
-
2004
- 2004-11-18 SG SG200407386A patent/SG112968A1/en unknown
- 2004-12-02 TW TW093137213A patent/TWI248562B/zh not_active IP Right Cessation
- 2004-12-02 EP EP04078274A patent/EP1548502A1/en not_active Withdrawn
- 2004-12-14 CN CN2012101209250A patent/CN102645852A/zh active Pending
- 2004-12-14 CN CNA2004101007964A patent/CN1629733A/zh active Pending
- 2004-12-14 JP JP2004361720A patent/JP4477480B2/ja not_active Expired - Fee Related
- 2004-12-14 KR KR1020040105355A patent/KR100644419B1/ko not_active Expired - Fee Related
-
2005
- 2005-04-06 US US11/099,650 patent/US7187433B2/en not_active Expired - Lifetime
-
2010
- 2010-02-03 JP JP2010022217A patent/JP5118711B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI407498B (zh) * | 2008-09-30 | 2013-09-01 | Mitsubishi Heavy Ind Ltd | 晶圓接合裝置及晶圓接合方法 |
| US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
Also Published As
| Publication number | Publication date |
|---|---|
| US7187433B2 (en) | 2007-03-06 |
| CN102645852A (zh) | 2012-08-22 |
| EP1548502A1 (en) | 2005-06-29 |
| TW200523686A (en) | 2005-07-16 |
| JP2010109390A (ja) | 2010-05-13 |
| JP5118711B2 (ja) | 2013-01-16 |
| US20050174555A1 (en) | 2005-08-11 |
| KR100644419B1 (ko) | 2006-11-10 |
| JP4477480B2 (ja) | 2010-06-09 |
| US20050128463A1 (en) | 2005-06-16 |
| KR20050060006A (ko) | 2005-06-21 |
| SG112968A1 (en) | 2005-07-28 |
| JP2005183959A (ja) | 2005-07-07 |
| CN1629733A (zh) | 2005-06-22 |
| US6897945B1 (en) | 2005-05-24 |
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