CN102645852A - 光刻装置及器件制造方法 - Google Patents
光刻装置及器件制造方法 Download PDFInfo
- Publication number
- CN102645852A CN102645852A CN2012101209250A CN201210120925A CN102645852A CN 102645852 A CN102645852 A CN 102645852A CN 2012101209250 A CN2012101209250 A CN 2012101209250A CN 201210120925 A CN201210120925 A CN 201210120925A CN 102645852 A CN102645852 A CN 102645852A
- Authority
- CN
- China
- Prior art keywords
- article
- supports
- articles
- substrate
- backfill gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 39
- 238000000059 patterning Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 17
- 238000005286 illumination Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 68
- 235000012431 wafers Nutrition 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 14
- 238000001259 photo etching Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical group [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/734,641 US6897945B1 (en) | 2003-12-15 | 2003-12-15 | Lithographic apparatus and device manufacturing method |
| US10/734,641 | 2003-12-15 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004101007964A Division CN1629733A (zh) | 2003-12-15 | 2004-12-14 | 光刻装置及器件制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102645852A true CN102645852A (zh) | 2012-08-22 |
Family
ID=34552774
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101209250A Pending CN102645852A (zh) | 2003-12-15 | 2004-12-14 | 光刻装置及器件制造方法 |
| CNA2004101007964A Pending CN1629733A (zh) | 2003-12-15 | 2004-12-14 | 光刻装置及器件制造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004101007964A Pending CN1629733A (zh) | 2003-12-15 | 2004-12-14 | 光刻装置及器件制造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6897945B1 (enExample) |
| EP (1) | EP1548502A1 (enExample) |
| JP (2) | JP4477480B2 (enExample) |
| KR (1) | KR100644419B1 (enExample) |
| CN (2) | CN102645852A (enExample) |
| SG (1) | SG112968A1 (enExample) |
| TW (1) | TWI248562B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112166383A (zh) * | 2018-05-28 | 2021-01-01 | Asml荷兰有限公司 | 粒子束设备 |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004351527A (ja) * | 2003-05-27 | 2004-12-16 | Koganei Corp | 吸着検出方法および吸着検出装置 |
| EP2267535A1 (en) * | 2003-11-05 | 2010-12-29 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
| US6897945B1 (en) * | 2003-12-15 | 2005-05-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050223973A1 (en) * | 2004-03-30 | 2005-10-13 | Infineon Technologies Ag | EUV lithography system and chuck for releasing reticle in a vacuum isolated environment |
| KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7196775B2 (en) * | 2004-08-23 | 2007-03-27 | Asml Holding N.V. | Patterned mask holding device and method using two holding systems |
| US7041989B1 (en) | 2004-10-22 | 2006-05-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20090006064A (ko) * | 2006-04-05 | 2009-01-14 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 스테이지 제어 방법, 노광 방법및 디바이스 제조 방법 |
| US20070268476A1 (en) * | 2006-05-19 | 2007-11-22 | Nikon Corporation | Kinematic chucks for reticles and other planar bodies |
| US20070292245A1 (en) * | 2006-05-25 | 2007-12-20 | Nikon Corporation | Stage assembly with secure device holder |
| US7508494B2 (en) * | 2006-12-22 | 2009-03-24 | Asml Netherlands B.V. | Lithographic apparatus and a subtrate table for exciting a shockwave in a substrate |
| US20080180873A1 (en) * | 2007-01-31 | 2008-07-31 | Applied Materials, Inc. | Securing a substrate to an electrostatic chuck |
| FR2912375B1 (fr) * | 2007-02-14 | 2009-12-18 | Eurocopter France | Verin electrique de commande de vol pour aeronef |
| TWI541615B (zh) | 2007-07-13 | 2016-07-11 | 瑪波微影Ip公司 | 在微影裝置中交換晶圓的方法 |
| US8705010B2 (en) * | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
| TWI337154B (en) * | 2008-04-17 | 2011-02-11 | Gudeng Prec Industral Co Ltd | Gas filling apparatus and gas filling port thereof |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| JP4786693B2 (ja) * | 2008-09-30 | 2011-10-05 | 三菱重工業株式会社 | ウェハ接合装置およびウェハ接合方法 |
| JP5470601B2 (ja) * | 2009-03-02 | 2014-04-16 | 新光電気工業株式会社 | 静電チャック |
| SG176059A1 (en) | 2009-05-15 | 2011-12-29 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| JP5960154B2 (ja) * | 2010-12-08 | 2016-08-02 | エーエスエムエル ホールディング エヌ.ブイ. | 静電クランプ、リソグラフィ装置、および静電クランプの製造方法 |
| NL2009689A (en) * | 2011-12-01 | 2013-06-05 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
| NL2009858A (en) | 2011-12-27 | 2013-07-01 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, and device manufacturing method. |
| CN103576464B (zh) * | 2012-07-20 | 2016-03-09 | 上海微电子装备有限公司 | 一种推顶机构及具有该推顶机构的光刻装置 |
| JP2014086701A (ja) * | 2012-10-26 | 2014-05-12 | Canon Inc | 保持装置、リソグラフィ装置及び物品の製造方法 |
| NL2011592A (en) | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Compensation for patterning device deformation. |
| CN108780773B (zh) * | 2016-02-10 | 2022-10-21 | 恩特格里斯公司 | 具有改善粒子性能的晶片接触表面突部轮廓 |
| CN107272351A (zh) * | 2017-07-28 | 2017-10-20 | 武汉华星光电技术有限公司 | 承载装置及具有该承载装置的曝光设备 |
| JP7104531B2 (ja) * | 2018-03-19 | 2022-07-21 | キヤノン株式会社 | 基板保持装置および基板処理装置 |
| EP3921701A1 (en) * | 2019-02-08 | 2021-12-15 | ASML Netherlands B.V. | Component for use in a lithographic apparatus, method of protecting a component and method of protecting tables in a lithographic apparatus |
| EP3832391A1 (en) * | 2019-12-03 | 2021-06-09 | ASML Netherlands B.V. | Clamp assembly |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235423A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | 半導体製造装置 |
| US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
| JP2000156400A (ja) * | 1998-11-19 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 基板の分離方法および分離装置 |
| US6184972B1 (en) * | 1998-09-18 | 2001-02-06 | Nikon Corporation | Substrate transport apparatus, substrate holding apparatus and substrate processing apparatus |
| US6628503B2 (en) * | 2001-03-13 | 2003-09-30 | Nikon Corporation | Gas cooled electrostatic pin chuck for vacuum applications |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4384918A (en) | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| GB2106325A (en) | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
| US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
| GB2147459A (en) * | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| DE3471827D1 (en) * | 1983-09-30 | 1988-07-07 | Philips Electronic Associated | Electrostatic chuck and loading method |
| JPS6272139A (ja) * | 1985-09-26 | 1987-04-02 | Hitachi Electronics Eng Co Ltd | ウエハ吸着装置 |
| FR2661039B1 (fr) * | 1990-04-12 | 1997-04-30 | Commissariat Energie Atomique | Porte-substrat electrostatique. |
| JP3238925B2 (ja) | 1990-11-17 | 2001-12-17 | 株式会社東芝 | 静電チャック |
| US5350479A (en) | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
| EP0635870A1 (en) | 1993-07-20 | 1995-01-25 | Applied Materials, Inc. | An electrostatic chuck having a grooved surface |
| KR100430643B1 (ko) | 1994-01-31 | 2004-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 두께가 균일한 절연체 막을 갖는 정전기 척 |
| TW288253B (enExample) * | 1994-02-03 | 1996-10-11 | Aneruba Kk | |
| JP3671379B2 (ja) * | 1994-02-03 | 2005-07-13 | アネルバ株式会社 | 静電吸着された被処理基板の離脱機構を持つプラズマ処理装置および静電吸着された被処理基板の離脱方法 |
| JPH0878512A (ja) * | 1994-09-09 | 1996-03-22 | Hitachi Ltd | 静電吸着装置及び方法 |
| JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
| JP3639686B2 (ja) * | 1996-01-31 | 2005-04-20 | キヤノン株式会社 | 基板の保持装置とこれを用いた露光装置、及びデバイスの製造方法 |
| US5923408A (en) * | 1996-01-31 | 1999-07-13 | Canon Kabushiki Kaisha | Substrate holding system and exposure apparatus using the same |
| JP4064557B2 (ja) * | 1999-01-07 | 2008-03-19 | 松下電器産業株式会社 | 真空処理装置の基板取り外し制御方法 |
| US6215642B1 (en) * | 1999-03-11 | 2001-04-10 | Nikon Corporation Of Japan | Vacuum compatible, deformable electrostatic chuck with high thermal conductivity |
| JP2001196290A (ja) * | 2000-01-13 | 2001-07-19 | Nikon Corp | 静電チャック、ステージ、基板処理装置、荷電粒子線露光装置及びデバイス製造方法 |
| JP2001267400A (ja) * | 2000-03-16 | 2001-09-28 | Kyocera Corp | ウエハ支持部材 |
| JP2002009139A (ja) * | 2000-06-20 | 2002-01-11 | Nikon Corp | 静電チャック |
| JP2002082445A (ja) * | 2000-07-07 | 2002-03-22 | Nikon Corp | ステージ装置及び露光装置 |
| JP4312394B2 (ja) * | 2001-01-29 | 2009-08-12 | 日本碍子株式会社 | 静電チャックおよび基板処理装置 |
| JP2002313902A (ja) * | 2001-04-18 | 2002-10-25 | Canon Inc | 静電チャック、該静電チャックから基板を離脱する方法 |
| US7105836B2 (en) | 2002-10-18 | 2006-09-12 | Asml Holding N.V. | Method and apparatus for cooling a reticle during lithographic exposure |
| US6897945B1 (en) * | 2003-12-15 | 2005-05-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2003
- 2003-12-15 US US10/734,641 patent/US6897945B1/en not_active Expired - Lifetime
-
2004
- 2004-11-18 SG SG200407386A patent/SG112968A1/en unknown
- 2004-12-02 TW TW093137213A patent/TWI248562B/zh not_active IP Right Cessation
- 2004-12-02 EP EP04078274A patent/EP1548502A1/en not_active Withdrawn
- 2004-12-14 CN CN2012101209250A patent/CN102645852A/zh active Pending
- 2004-12-14 CN CNA2004101007964A patent/CN1629733A/zh active Pending
- 2004-12-14 JP JP2004361720A patent/JP4477480B2/ja not_active Expired - Fee Related
- 2004-12-14 KR KR1020040105355A patent/KR100644419B1/ko not_active Expired - Fee Related
-
2005
- 2005-04-06 US US11/099,650 patent/US7187433B2/en not_active Expired - Lifetime
-
2010
- 2010-02-03 JP JP2010022217A patent/JP5118711B2/ja not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235423A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | 半導体製造装置 |
| US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
| US6184972B1 (en) * | 1998-09-18 | 2001-02-06 | Nikon Corporation | Substrate transport apparatus, substrate holding apparatus and substrate processing apparatus |
| JP2000156400A (ja) * | 1998-11-19 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 基板の分離方法および分離装置 |
| US6628503B2 (en) * | 2001-03-13 | 2003-09-30 | Nikon Corporation | Gas cooled electrostatic pin chuck for vacuum applications |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112166383A (zh) * | 2018-05-28 | 2021-01-01 | Asml荷兰有限公司 | 粒子束设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7187433B2 (en) | 2007-03-06 |
| EP1548502A1 (en) | 2005-06-29 |
| TW200523686A (en) | 2005-07-16 |
| TWI248562B (en) | 2006-02-01 |
| JP2010109390A (ja) | 2010-05-13 |
| JP5118711B2 (ja) | 2013-01-16 |
| US20050174555A1 (en) | 2005-08-11 |
| KR100644419B1 (ko) | 2006-11-10 |
| JP4477480B2 (ja) | 2010-06-09 |
| US20050128463A1 (en) | 2005-06-16 |
| KR20050060006A (ko) | 2005-06-21 |
| SG112968A1 (en) | 2005-07-28 |
| JP2005183959A (ja) | 2005-07-07 |
| CN1629733A (zh) | 2005-06-22 |
| US6897945B1 (en) | 2005-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102645852A (zh) | 光刻装置及器件制造方法 | |
| US7532310B2 (en) | Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck | |
| JP3747566B2 (ja) | 液浸型露光装置 | |
| US8446566B2 (en) | Method of loading a substrate on a substrate table and lithographic apparatus and device manufacturing method | |
| TWI284254B (en) | Lithographic apparatus and device manufacturing method | |
| US9019476B2 (en) | Lithographic apparatus and device manufacturing method | |
| WO2008156367A1 (en) | Method of loading a substrate on a substrate table, device manufacturing method, computer program, data carrier and apparatus | |
| US7196768B2 (en) | Lithographic apparatus and device manufacturing method | |
| US20080316461A1 (en) | Lithographic apparatus and device manufacturing method | |
| JP2011530804A (ja) | リソグラフィ装置およびデバイス製造方法 | |
| KR100863030B1 (ko) | 리소그래피 장치 및 디바이스 제조 방법 | |
| EP1610182B1 (en) | Lithographic apparatus and device manufacturing method | |
| US7408615B2 (en) | Lithographic apparatus and device manufacturing method | |
| US9274439B2 (en) | Reticle clamping system | |
| US7349067B2 (en) | Lithographic apparatus and device manufacturing method | |
| US20090066921A1 (en) | Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method | |
| EP1475670B1 (en) | Lithographic apparatus and device manufacturing method | |
| JP2007251133A (ja) | リソグラフィ装置およびデバイス製造方法 | |
| NL2009338A (en) | Support, method to load a plate-shape object on the support, lithographic apparatus and method to load a substrate on the substrate table of the lithographic apparatus. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120822 |