TWI230821B - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
- Publication number
- TWI230821B TWI230821B TW091102576A TW91102576A TWI230821B TW I230821 B TWI230821 B TW I230821B TW 091102576 A TW091102576 A TW 091102576A TW 91102576 A TW91102576 A TW 91102576A TW I230821 B TWI230821 B TW I230821B
- Authority
- TW
- Taiwan
- Prior art keywords
- wiring
- electrode
- terminal
- source
- liquid crystal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims description 4
- 238000009429 electrical wiring Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 66
- 238000005520 cutting process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 nitride nitride Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001054854A JP4646420B2 (ja) | 2001-02-28 | 2001-02-28 | 薄膜トランジスタアレイ基板およびそれを用いた表示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI230821B true TWI230821B (en) | 2005-04-11 |
Family
ID=18915123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091102576A TWI230821B (en) | 2001-02-28 | 2002-02-15 | Liquid crystal display device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7872698B2 (enExample) |
| JP (1) | JP4646420B2 (enExample) |
| KR (1) | KR100682691B1 (enExample) |
| TW (1) | TWI230821B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4646420B2 (ja) * | 2001-02-28 | 2011-03-09 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板およびそれを用いた表示装置 |
| JP2004354798A (ja) * | 2003-05-30 | 2004-12-16 | Nec Lcd Technologies Ltd | 薄膜トランジスタ基板及びその製造方法 |
| JP4798336B2 (ja) * | 2005-01-11 | 2011-10-19 | カシオ計算機株式会社 | 回路基板装置の製造方法 |
| JP4816110B2 (ja) * | 2006-01-31 | 2011-11-16 | ソニー株式会社 | 液晶表示装置 |
| JP4850589B2 (ja) * | 2006-05-31 | 2012-01-11 | 株式会社 日立ディスプレイズ | 表示装置 |
| TWI387807B (zh) | 2008-08-11 | 2013-03-01 | Chunghwa Picture Tubes Ltd | 接墊結構、主動元件陣列基板以及液晶顯示面板 |
| WO2010029859A1 (en) * | 2008-09-12 | 2010-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101493662B1 (ko) | 2009-07-10 | 2015-02-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기 및 표시 패널 |
| CN102662264B (zh) * | 2012-04-28 | 2016-03-02 | 深圳市华星光电技术有限公司 | 一种加电电路、液晶基板和一种液晶面板制作方法 |
| CN102854643B (zh) * | 2012-09-04 | 2015-11-25 | 深圳市华星光电技术有限公司 | 一种液晶显示面板及其制造方法 |
| JP6364810B2 (ja) * | 2014-02-26 | 2018-08-01 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法 |
| KR102494779B1 (ko) * | 2015-12-22 | 2023-02-02 | 엘지디스플레이 주식회사 | 터치 겸용 액정 표시 장치 |
| CN105607366B (zh) * | 2016-01-05 | 2019-03-05 | 京东方科技集团股份有限公司 | 防静电器件及其制造方法、基板 |
| CN107422550B (zh) * | 2017-07-24 | 2020-05-01 | 武汉华星光电技术有限公司 | Pin及其制造方法、显示面板 |
| CN108550580B (zh) * | 2018-04-27 | 2019-10-11 | 武汉华星光电技术有限公司 | Tft阵列基板 |
| JP6729658B2 (ja) * | 2018-10-16 | 2020-07-22 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
| US12469829B2 (en) * | 2022-01-24 | 2025-11-11 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6419324U (enExample) | 1987-07-27 | 1989-01-31 | ||
| US5492582A (en) * | 1993-04-22 | 1996-02-20 | Casio Computer Co., Ltd. | Method of manufacturing liquid crystal display device |
| US5546204A (en) * | 1994-05-26 | 1996-08-13 | Honeywell Inc. | TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon |
| JP2555987B2 (ja) * | 1994-06-23 | 1996-11-20 | 日本電気株式会社 | アクティブマトリクス基板 |
| TW347477B (en) * | 1994-09-30 | 1998-12-11 | Sanyo Electric Co | Liquid crystal display with storage capacitors for holding electric charges |
| JP3315834B2 (ja) * | 1995-05-31 | 2002-08-19 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
| JPH11509938A (ja) * | 1995-07-31 | 1999-08-31 | リットン システムズ カナダ リミテッド | 静電放電防止回路付き半導体スイッチアレイおよび製造方法 |
| KR100338480B1 (ko) | 1995-08-19 | 2003-01-24 | 엘지.필립스 엘시디 주식회사 | 액정표시장치및그제조방법 |
| JPH09113931A (ja) * | 1995-10-16 | 1997-05-02 | Sharp Corp | 液晶表示装置 |
| KR0161462B1 (ko) * | 1995-11-23 | 1999-01-15 | 김광호 | 액정 디스플레이에서의 게이트 패드 형성방법 |
| JP3208658B2 (ja) * | 1997-03-27 | 2001-09-17 | 株式会社アドバンスト・ディスプレイ | 電気光学素子の製法 |
| TW440736B (en) * | 1997-10-14 | 2001-06-16 | Samsung Electronics Co Ltd | Liquid crystal displays and manufacturing methods thereof |
| KR100276442B1 (ko) * | 1998-02-20 | 2000-12-15 | 구본준 | 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치 |
| JP3819590B2 (ja) * | 1998-05-07 | 2006-09-13 | 三菱電機株式会社 | 液晶表示素子ならびに該素子を用いた液晶表示装置、および反射型液晶表示装置 |
| JP3975008B2 (ja) | 1998-07-21 | 2007-09-12 | 株式会社アドバンスト・ディスプレイ | 表示装置の製造方法 |
| JP4390991B2 (ja) * | 1999-08-31 | 2009-12-24 | シャープ株式会社 | 液晶表示装置 |
| JP4646420B2 (ja) * | 2001-02-28 | 2011-03-09 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板およびそれを用いた表示装置 |
-
2001
- 2001-02-28 JP JP2001054854A patent/JP4646420B2/ja not_active Expired - Lifetime
-
2002
- 2002-02-15 TW TW091102576A patent/TWI230821B/zh not_active IP Right Cessation
- 2002-02-23 KR KR1020020009728A patent/KR100682691B1/ko not_active Expired - Fee Related
- 2002-02-25 US US10/082,984 patent/US7872698B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020070810A (ko) | 2002-09-11 |
| JP2002258319A (ja) | 2002-09-11 |
| KR100682691B1 (ko) | 2007-02-15 |
| US7872698B2 (en) | 2011-01-18 |
| US20020130983A1 (en) | 2002-09-19 |
| JP4646420B2 (ja) | 2011-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |