TWI229238B - Positive photosensitive resin composition and process for forming a relief pattern - Google Patents

Positive photosensitive resin composition and process for forming a relief pattern Download PDF

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Publication number
TWI229238B
TWI229238B TW088116829A TW88116829A TWI229238B TW I229238 B TWI229238 B TW I229238B TW 088116829 A TW088116829 A TW 088116829A TW 88116829 A TW88116829 A TW 88116829A TW I229238 B TWI229238 B TW I229238B
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TW
Taiwan
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group
patent application
scope
composition
ministry
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TW088116829A
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English (en)
Chinese (zh)
Inventor
Pamela J Waterson
Ahmad Naiini
William D Weber
Steve Lien-Chung Hsu
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Arch Spec Chem Inc
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Publication of TWI229238B publication Critical patent/TWI229238B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
TW088116829A 1998-10-01 1999-11-17 Positive photosensitive resin composition and process for forming a relief pattern TWI229238B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10269498P 1998-10-01 1998-10-01
US09/406,007 US6127086A (en) 1998-10-01 1999-09-24 Photosensitive resin compositions

Publications (1)

Publication Number Publication Date
TWI229238B true TWI229238B (en) 2005-03-11

Family

ID=26799635

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088116829A TWI229238B (en) 1998-10-01 1999-11-17 Positive photosensitive resin composition and process for forming a relief pattern

Country Status (8)

Country Link
US (1) US6127086A (enExample)
EP (1) EP1171802B1 (enExample)
JP (1) JP4088910B2 (enExample)
KR (1) KR100767197B1 (enExample)
AT (1) ATE385324T1 (enExample)
DE (1) DE69938082T2 (enExample)
TW (1) TWI229238B (enExample)
WO (1) WO2000019275A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6214516B1 (en) * 1998-10-01 2001-04-10 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
JP2005524972A (ja) 2002-02-06 2005-08-18 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 半導体応力緩衝剤コーティングの改良されたエッジビーズ除去組成物およびその使用
US6939659B2 (en) * 2003-03-11 2005-09-06 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
WO2004081057A2 (en) * 2003-03-11 2004-09-23 Arch Specialty Chemicals, Inc. Novel photosensitive resin compositions
KR20060023520A (ko) * 2003-03-11 2006-03-14 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 신규한 감광성 수지 조성물들
EP1609024B1 (en) * 2003-03-11 2015-09-30 Fujifilm Electronic Materials USA, Inc. Photosensitive resin compositions
US7132205B2 (en) * 2003-06-05 2006-11-07 Arch Specialty Chemicals, Inc. Positive photosensitive resin compositions
TW200512543A (en) * 2003-08-06 2005-04-01 Sumitomo Bakelite Co Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP2008546204A (ja) * 2005-06-03 2008-12-18 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 前処理組成物
JP4530949B2 (ja) * 2005-08-29 2010-08-25 富士フイルム株式会社 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
TW200927832A (en) * 2007-10-16 2009-07-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
WO2018232214A1 (en) 2017-06-16 2018-12-20 Fujifilm Electronic Materials U.S.A., Inc. Multilayer structure
PH12022551763A1 (en) 2020-01-16 2023-11-29 Fujifilm Electronic Mat Usa Inc Dry film

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2931297A1 (de) * 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
JPS57202536A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Positive type resist composition
US4684597A (en) * 1985-10-25 1987-08-04 Eastman Kodak Company Non-precipitating quinone diazide polymer containing photoresist composition with o-quinone diazide trisester as dissolution inhibitor
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
US4957846A (en) * 1988-12-27 1990-09-18 Olin Hunt Specialty Products Inc. Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group
EP0388482B1 (de) * 1989-03-20 1994-07-06 Siemens Aktiengesellschaft Lichtempfindliches Gemisch
JPH087434B2 (ja) * 1989-10-30 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
JP2813033B2 (ja) * 1990-05-25 1998-10-22 東京応化工業株式会社 ポジ型感光性樹脂組成物
JPH087436B2 (ja) * 1990-07-06 1996-01-29 住友ベークライト株式会社 感光性ジアゾキノン化合物及びそれを用いたポジ型感光性樹脂組成物
DE69131529T2 (de) * 1990-05-29 2000-01-20 Sumitomo Bakelite Co. Ltd., Tokio/Tokyo Positiv arbeitende lichtempfindliche Harzzusammensetzung
JP2877895B2 (ja) * 1990-05-29 1999-04-05 住友ベークライト株式会社 ポジ型感光性樹脂組成物
JPH04251849A (ja) * 1991-01-29 1992-09-08 Fuji Photo Film Co Ltd 感電離放射線性樹脂組成物
JP3000705B2 (ja) * 1991-03-20 2000-01-17 日本ゼオン株式会社 ポジ型レジスト組成物
JPH0548063A (ja) * 1991-03-25 1993-02-26 Hitachi Ltd カラー固体撮像素子及びその製造方法
JP2817441B2 (ja) * 1991-03-29 1998-10-30 日本ゼオン株式会社 ポジ型レジスト組成物
JP2981024B2 (ja) * 1991-07-05 1999-11-22 住友ベークライト株式会社 ポジ型感光性樹脂組成物
JPH0537720A (ja) * 1991-07-31 1993-02-12 Kuraray Co Ltd 光学読取り装置用のパツド
US5296330A (en) * 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US5302489A (en) * 1991-10-29 1994-04-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer
JP2626479B2 (ja) * 1993-06-29 1997-07-02 日本ゼオン株式会社 ポジ型レジスト組成物
JPH07168355A (ja) * 1993-12-13 1995-07-04 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH0895240A (ja) * 1994-07-26 1996-04-12 Nippon Zeon Co Ltd ポジ型レジスト組成物
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
JP3499032B2 (ja) * 1995-02-02 2004-02-23 ダウ コーニング アジア株式会社 放射線硬化性組成物、その硬化方法及びパターン形成方法
JP3664334B2 (ja) * 1995-04-27 2005-06-22 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JPH0915853A (ja) * 1995-04-27 1997-01-17 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP3467118B2 (ja) * 1995-05-24 2003-11-17 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JPH09127690A (ja) * 1995-10-30 1997-05-16 Shin Etsu Chem Co Ltd ポジ型フォトレジスト材料
US5856065A (en) * 1996-03-27 1999-01-05 Olin Microelectronic Chemicals, Inc. Negative working photoresist composition based on polyimide primers
US6051358A (en) * 1997-11-04 2000-04-18 Shipley Company, L.L.C. Photoresist with novel photoactive compound
JP3449933B2 (ja) * 1997-12-09 2003-09-22 住友ベークライト株式会社 ポジ型感光性樹脂組成物及びそれを用いた半導体装置
JP3992351B2 (ja) * 1998-03-12 2007-10-17 住友ベークライト株式会社 ポジ型感光性樹脂組成物及びそれを用いた半導体装置
JP3369471B2 (ja) * 1998-05-29 2003-01-20 東京応化工業株式会社 ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2000019724A (ja) * 1998-06-30 2000-01-21 Fuji Photo Film Co Ltd 感光性樹脂組成物

Also Published As

Publication number Publication date
KR100767197B1 (ko) 2007-10-17
WO2000019275A1 (en) 2000-04-06
ATE385324T1 (de) 2008-02-15
DE69938082T2 (de) 2009-02-12
DE69938082D1 (de) 2008-03-20
JP2002526794A (ja) 2002-08-20
JP4088910B2 (ja) 2008-05-21
EP1171802B1 (en) 2008-01-30
EP1171802A4 (en) 2002-03-13
EP1171802A1 (en) 2002-01-16
KR20010088829A (ko) 2001-09-28
US6127086A (en) 2000-10-03

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