JP4088910B2 - 新規な感光性樹脂組成物 - Google Patents
新規な感光性樹脂組成物 Download PDFInfo
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- JP4088910B2 JP4088910B2 JP2000572721A JP2000572721A JP4088910B2 JP 4088910 B2 JP4088910 B2 JP 4088910B2 JP 2000572721 A JP2000572721 A JP 2000572721A JP 2000572721 A JP2000572721 A JP 2000572721A JP 4088910 B2 JP4088910 B2 JP 4088910B2
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- FDQSRULYDNDXQB-UHFFFAOYSA-N benzene-1,3-dicarbonyl chloride Chemical compound ClC(=O)C1=CC=CC(C(Cl)=O)=C1 FDQSRULYDNDXQB-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 150000001354 dialkyl silanes Chemical class 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- LYGWPQUPVNLSPG-UHFFFAOYSA-N icosane-2,17-diamine Chemical compound CCCC(N)CCCCCCCCCCCCCCC(C)N LYGWPQUPVNLSPG-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- VQXBKCWOCJSIRT-UHFFFAOYSA-N octadecane-1,12-diamine Chemical compound CCCCCCC(N)CCCCCCCCCCCN VQXBKCWOCJSIRT-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012704 polymeric precursor Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000011962 puddings Nutrition 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/22—Polybenzoxazoles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10269498P | 1998-10-01 | 1998-10-01 | |
| US60/102,694 | 1998-10-01 | ||
| US09/406,007 | 1999-09-24 | ||
| US09/406,007 US6127086A (en) | 1998-10-01 | 1999-09-24 | Photosensitive resin compositions |
| PCT/US1999/022618 WO2000019275A1 (en) | 1998-10-01 | 1999-09-29 | Novel photosensitive resin compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002526794A JP2002526794A (ja) | 2002-08-20 |
| JP2002526794A5 JP2002526794A5 (enExample) | 2005-12-22 |
| JP4088910B2 true JP4088910B2 (ja) | 2008-05-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000572721A Expired - Fee Related JP4088910B2 (ja) | 1998-10-01 | 1999-09-29 | 新規な感光性樹脂組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6127086A (enExample) |
| EP (1) | EP1171802B1 (enExample) |
| JP (1) | JP4088910B2 (enExample) |
| KR (1) | KR100767197B1 (enExample) |
| AT (1) | ATE385324T1 (enExample) |
| DE (1) | DE69938082T2 (enExample) |
| TW (1) | TWI229238B (enExample) |
| WO (1) | WO2000019275A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214516B1 (en) * | 1998-10-01 | 2001-04-10 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| JP2005524972A (ja) | 2002-02-06 | 2005-08-18 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | 半導体応力緩衝剤コーティングの改良されたエッジビーズ除去組成物およびその使用 |
| US6939659B2 (en) * | 2003-03-11 | 2005-09-06 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| WO2004081057A2 (en) * | 2003-03-11 | 2004-09-23 | Arch Specialty Chemicals, Inc. | Novel photosensitive resin compositions |
| KR20060023520A (ko) * | 2003-03-11 | 2006-03-14 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 신규한 감광성 수지 조성물들 |
| EP1609024B1 (en) * | 2003-03-11 | 2015-09-30 | Fujifilm Electronic Materials USA, Inc. | Photosensitive resin compositions |
| US7132205B2 (en) * | 2003-06-05 | 2006-11-07 | Arch Specialty Chemicals, Inc. | Positive photosensitive resin compositions |
| TW200512543A (en) * | 2003-08-06 | 2005-04-01 | Sumitomo Bakelite Co | Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device |
| TWI363249B (en) * | 2003-10-15 | 2012-05-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
| JP2008546204A (ja) * | 2005-06-03 | 2008-12-18 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | 前処理組成物 |
| JP4530949B2 (ja) * | 2005-08-29 | 2010-08-25 | 富士フイルム株式会社 | 感光性樹脂組成物及びそれを用いた半導体装置の製造方法 |
| TW200927832A (en) * | 2007-10-16 | 2009-07-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
| WO2018232214A1 (en) | 2017-06-16 | 2018-12-20 | Fujifilm Electronic Materials U.S.A., Inc. | Multilayer structure |
| PH12022551763A1 (en) | 2020-01-16 | 2023-11-29 | Fujifilm Electronic Mat Usa Inc | Dry film |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2931297A1 (de) * | 1979-08-01 | 1981-02-19 | Siemens Ag | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
| JPS57202536A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Positive type resist composition |
| US4684597A (en) * | 1985-10-25 | 1987-08-04 | Eastman Kodak Company | Non-precipitating quinone diazide polymer containing photoresist composition with o-quinone diazide trisester as dissolution inhibitor |
| US5037720A (en) * | 1987-07-21 | 1991-08-06 | Hoechst Celanese Corporation | Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use |
| US4957846A (en) * | 1988-12-27 | 1990-09-18 | Olin Hunt Specialty Products Inc. | Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group |
| EP0388482B1 (de) * | 1989-03-20 | 1994-07-06 | Siemens Aktiengesellschaft | Lichtempfindliches Gemisch |
| JPH087434B2 (ja) * | 1989-10-30 | 1996-01-29 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| JP2813033B2 (ja) * | 1990-05-25 | 1998-10-22 | 東京応化工業株式会社 | ポジ型感光性樹脂組成物 |
| JPH087436B2 (ja) * | 1990-07-06 | 1996-01-29 | 住友ベークライト株式会社 | 感光性ジアゾキノン化合物及びそれを用いたポジ型感光性樹脂組成物 |
| DE69131529T2 (de) * | 1990-05-29 | 2000-01-20 | Sumitomo Bakelite Co. Ltd., Tokio/Tokyo | Positiv arbeitende lichtempfindliche Harzzusammensetzung |
| JP2877895B2 (ja) * | 1990-05-29 | 1999-04-05 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物 |
| JPH04251849A (ja) * | 1991-01-29 | 1992-09-08 | Fuji Photo Film Co Ltd | 感電離放射線性樹脂組成物 |
| JP3000705B2 (ja) * | 1991-03-20 | 2000-01-17 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| JPH0548063A (ja) * | 1991-03-25 | 1993-02-26 | Hitachi Ltd | カラー固体撮像素子及びその製造方法 |
| JP2817441B2 (ja) * | 1991-03-29 | 1998-10-30 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| JP2981024B2 (ja) * | 1991-07-05 | 1999-11-22 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物 |
| JPH0537720A (ja) * | 1991-07-31 | 1993-02-12 | Kuraray Co Ltd | 光学読取り装置用のパツド |
| US5296330A (en) * | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive |
| US5302489A (en) * | 1991-10-29 | 1994-04-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer |
| JP2626479B2 (ja) * | 1993-06-29 | 1997-07-02 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| JPH07168355A (ja) * | 1993-12-13 | 1995-07-04 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
| JPH0895240A (ja) * | 1994-07-26 | 1996-04-12 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
| US5541033A (en) * | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
| JP3499032B2 (ja) * | 1995-02-02 | 2004-02-23 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
| JP3664334B2 (ja) * | 1995-04-27 | 2005-06-22 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
| JPH0915853A (ja) * | 1995-04-27 | 1997-01-17 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| JP3467118B2 (ja) * | 1995-05-24 | 2003-11-17 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
| JPH09127690A (ja) * | 1995-10-30 | 1997-05-16 | Shin Etsu Chem Co Ltd | ポジ型フォトレジスト材料 |
| US5856065A (en) * | 1996-03-27 | 1999-01-05 | Olin Microelectronic Chemicals, Inc. | Negative working photoresist composition based on polyimide primers |
| US6051358A (en) * | 1997-11-04 | 2000-04-18 | Shipley Company, L.L.C. | Photoresist with novel photoactive compound |
| JP3449933B2 (ja) * | 1997-12-09 | 2003-09-22 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物及びそれを用いた半導体装置 |
| JP3992351B2 (ja) * | 1998-03-12 | 2007-10-17 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物及びそれを用いた半導体装置 |
| JP3369471B2 (ja) * | 1998-05-29 | 2003-01-20 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
| JP2000019724A (ja) * | 1998-06-30 | 2000-01-21 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
-
1999
- 1999-09-24 US US09/406,007 patent/US6127086A/en not_active Expired - Lifetime
- 1999-09-29 JP JP2000572721A patent/JP4088910B2/ja not_active Expired - Fee Related
- 1999-09-29 WO PCT/US1999/022618 patent/WO2000019275A1/en not_active Ceased
- 1999-09-29 EP EP99950005A patent/EP1171802B1/en not_active Expired - Lifetime
- 1999-09-29 KR KR1020017004132A patent/KR100767197B1/ko not_active Expired - Fee Related
- 1999-09-29 AT AT99950005T patent/ATE385324T1/de not_active IP Right Cessation
- 1999-09-29 DE DE69938082T patent/DE69938082T2/de not_active Expired - Lifetime
- 1999-11-17 TW TW088116829A patent/TWI229238B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100767197B1 (ko) | 2007-10-17 |
| WO2000019275A1 (en) | 2000-04-06 |
| TWI229238B (en) | 2005-03-11 |
| ATE385324T1 (de) | 2008-02-15 |
| DE69938082T2 (de) | 2009-02-12 |
| DE69938082D1 (de) | 2008-03-20 |
| JP2002526794A (ja) | 2002-08-20 |
| EP1171802B1 (en) | 2008-01-30 |
| EP1171802A4 (en) | 2002-03-13 |
| EP1171802A1 (en) | 2002-01-16 |
| KR20010088829A (ko) | 2001-09-28 |
| US6127086A (en) | 2000-10-03 |
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