KR100767197B1 - 신규한 감광성 수지 조성물 및 이를 사용하는 릴리프 패턴의 형성방법 - Google Patents

신규한 감광성 수지 조성물 및 이를 사용하는 릴리프 패턴의 형성방법 Download PDF

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Publication number
KR100767197B1
KR100767197B1 KR1020017004132A KR20017004132A KR100767197B1 KR 100767197 B1 KR100767197 B1 KR 100767197B1 KR 1020017004132 A KR1020017004132 A KR 1020017004132A KR 20017004132 A KR20017004132 A KR 20017004132A KR 100767197 B1 KR100767197 B1 KR 100767197B1
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group
composition
formula
weight
photosensitizer
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Expired - Fee Related
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KR1020017004132A
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English (en)
Korean (ko)
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KR20010088829A (ko
Inventor
워터슨파멜라제이
네이니아매드
웨버윌리엄디
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아치 스페셜티 케미칼즈, 인코포레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
KR1020017004132A 1998-10-01 1999-09-29 신규한 감광성 수지 조성물 및 이를 사용하는 릴리프 패턴의 형성방법 Expired - Fee Related KR100767197B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10269498P 1998-10-01 1998-10-01
US60/102,694 1998-10-01
US09/406,007 1999-09-24
US09/406,007 US6127086A (en) 1998-10-01 1999-09-24 Photosensitive resin compositions

Publications (2)

Publication Number Publication Date
KR20010088829A KR20010088829A (ko) 2001-09-28
KR100767197B1 true KR100767197B1 (ko) 2007-10-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017004132A Expired - Fee Related KR100767197B1 (ko) 1998-10-01 1999-09-29 신규한 감광성 수지 조성물 및 이를 사용하는 릴리프 패턴의 형성방법

Country Status (8)

Country Link
US (1) US6127086A (enExample)
EP (1) EP1171802B1 (enExample)
JP (1) JP4088910B2 (enExample)
KR (1) KR100767197B1 (enExample)
AT (1) ATE385324T1 (enExample)
DE (1) DE69938082T2 (enExample)
TW (1) TWI229238B (enExample)
WO (1) WO2000019275A1 (enExample)

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US6214516B1 (en) * 1998-10-01 2001-04-10 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
JP2005524972A (ja) 2002-02-06 2005-08-18 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 半導体応力緩衝剤コーティングの改良されたエッジビーズ除去組成物およびその使用
US6939659B2 (en) * 2003-03-11 2005-09-06 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
WO2004081057A2 (en) * 2003-03-11 2004-09-23 Arch Specialty Chemicals, Inc. Novel photosensitive resin compositions
KR20060023520A (ko) * 2003-03-11 2006-03-14 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 신규한 감광성 수지 조성물들
EP1609024B1 (en) * 2003-03-11 2015-09-30 Fujifilm Electronic Materials USA, Inc. Photosensitive resin compositions
US7132205B2 (en) * 2003-06-05 2006-11-07 Arch Specialty Chemicals, Inc. Positive photosensitive resin compositions
TW200512543A (en) * 2003-08-06 2005-04-01 Sumitomo Bakelite Co Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP2008546204A (ja) * 2005-06-03 2008-12-18 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 前処理組成物
JP4530949B2 (ja) * 2005-08-29 2010-08-25 富士フイルム株式会社 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
TW200927832A (en) * 2007-10-16 2009-07-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
WO2018232214A1 (en) 2017-06-16 2018-12-20 Fujifilm Electronic Materials U.S.A., Inc. Multilayer structure
PH12022551763A1 (en) 2020-01-16 2023-11-29 Fujifilm Electronic Mat Usa Inc Dry film

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US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
JPH0537720A (ja) * 1991-07-31 1993-02-12 Kuraray Co Ltd 光学読取り装置用のパツド
US5449584A (en) * 1990-05-29 1995-09-12 Sumitomo Bakelite Company, Ltd. Positive photo-sensitive resin composition comprising a photosensitive polybenzoxazole or a mixture of a polybenzoxazole, an organic solvent soluble polymer and a diazoquinone and/or a dihydropyridine compound

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* Cited by examiner, † Cited by third party
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US4395482A (en) * 1979-08-01 1983-07-26 Siemens Aktiengesellschaft Method for the preparation of heat-resistant relief structures using positive resists
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
US5449584A (en) * 1990-05-29 1995-09-12 Sumitomo Bakelite Company, Ltd. Positive photo-sensitive resin composition comprising a photosensitive polybenzoxazole or a mixture of a polybenzoxazole, an organic solvent soluble polymer and a diazoquinone and/or a dihydropyridine compound
JPH0537720A (ja) * 1991-07-31 1993-02-12 Kuraray Co Ltd 光学読取り装置用のパツド

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Publication number Publication date
WO2000019275A1 (en) 2000-04-06
TWI229238B (en) 2005-03-11
ATE385324T1 (de) 2008-02-15
DE69938082T2 (de) 2009-02-12
DE69938082D1 (de) 2008-03-20
JP2002526794A (ja) 2002-08-20
JP4088910B2 (ja) 2008-05-21
EP1171802B1 (en) 2008-01-30
EP1171802A4 (en) 2002-03-13
EP1171802A1 (en) 2002-01-16
KR20010088829A (ko) 2001-09-28
US6127086A (en) 2000-10-03

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