TW588402B - Cleaning method of substrate treating apparatus, and substrate treating apparatus - Google Patents

Cleaning method of substrate treating apparatus, and substrate treating apparatus Download PDF

Info

Publication number
TW588402B
TW588402B TW091104273A TW91104273A TW588402B TW 588402 B TW588402 B TW 588402B TW 091104273 A TW091104273 A TW 091104273A TW 91104273 A TW91104273 A TW 91104273A TW 588402 B TW588402 B TW 588402B
Authority
TW
Taiwan
Prior art keywords
processing chamber
cleaning
complex
processing apparatus
substrate processing
Prior art date
Application number
TW091104273A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiro Oshima
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW588402B publication Critical patent/TW588402B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW091104273A 2001-03-14 2002-03-07 Cleaning method of substrate treating apparatus, and substrate treating apparatus TW588402B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001072711A JP4754080B2 (ja) 2001-03-14 2001-03-14 基板処理装置のクリーニング方法及び基板処理装置

Publications (1)

Publication Number Publication Date
TW588402B true TW588402B (en) 2004-05-21

Family

ID=18930257

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091104273A TW588402B (en) 2001-03-14 2002-03-07 Cleaning method of substrate treating apparatus, and substrate treating apparatus

Country Status (6)

Country Link
US (1) US6893964B2 (https=)
JP (1) JP4754080B2 (https=)
KR (1) KR100570250B1 (https=)
CN (1) CN1322558C (https=)
TW (1) TW588402B (https=)
WO (1) WO2002073675A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663059B2 (ja) * 2000-03-10 2011-03-30 東京エレクトロン株式会社 処理装置のクリーニング方法
KR100474565B1 (ko) * 2002-08-30 2005-03-10 삼성전자주식회사 소스 가스 공급 방법 및 장치
JP5259125B2 (ja) * 2006-08-24 2013-08-07 富士通セミコンダクター株式会社 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体
CN103028564A (zh) * 2011-09-30 2013-04-10 金宝电子（中国）有限公司 溶液供应单元、清洁系统及其清洁方法
JP6154677B2 (ja) * 2013-06-28 2017-06-28 東京エレクトロン株式会社 クリーニング方法及び処理装置
CN109585248B (zh) * 2013-12-02 2021-04-20 应用材料公司 用于原位清洁工艺腔室的方法和装置
JP5762602B1 (ja) * 2014-06-24 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR102128169B1 (ko) * 2018-10-03 2020-06-29 주식회사 코윈디에스티 가스 유량 조절 장치 및 이를 이용하는 레이저 화학기상증착 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149704A (en) * 1974-10-28 1976-04-30 Fuji Photo Film Co Ltd Jikikirokubaitaino seiho
US4393092A (en) * 1982-03-12 1983-07-12 Motorola, Inc. Method for controlling the conductivity of polyimide films and improved devices utilizing the method
JPS59218789A (ja) * 1983-05-06 1984-12-10 信越化学工業株式会社 フレキシブルプリント配線基板およびその製造方法
KR900014625A (ko) * 1989-03-20 1990-10-24 미다 가쓰시게 금속/유기 고분자 합성수지 복합체 및 이의 제조방법
JP3297974B2 (ja) * 1995-07-26 2002-07-02 ソニー株式会社 ペロブスカイト型酸化物薄膜のプラズマエッチング方法および半導体装置の製造方法
IL119598A0 (en) 1995-11-17 1997-02-18 Air Prod & Chem Plasma etch with trifluoroacetic acid or its derivatives
JP3689524B2 (ja) * 1996-03-22 2005-08-31 キヤノン株式会社 酸化アルミニウム膜及びその形成方法
JPH10223614A (ja) * 1997-02-12 1998-08-21 Daikin Ind Ltd エッチングガスおよびクリーニングガス
JPH10335318A (ja) * 1997-05-29 1998-12-18 Toshiba Corp 半導体製造装置のクリーニング方法
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
DE19833448C2 (de) 1998-07-24 2003-07-17 Infineon Technologies Ag Verfahren zur Reinigung von CVD-Anlagen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same

Also Published As

Publication number Publication date
KR100570250B1 (ko) 2006-04-12
WO2002073675A1 (fr) 2002-09-19
CN1322558C (zh) 2007-06-20
KR20030083730A (ko) 2003-10-30
JP4754080B2 (ja) 2011-08-24
JP2002270597A (ja) 2002-09-20
CN1620717A (zh) 2005-05-25
US20040115951A1 (en) 2004-06-17
US6893964B2 (en) 2005-05-17

Similar Documents

Publication Publication Date Title
US7737005B2 (en) Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program
KR101601662B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
CN1777694B (zh) 利用等离子体cvd的成膜方法以及装置
KR101070666B1 (ko) 클리닝 방법 및 기판 처리 장치
US8679259B2 (en) Substrate processing apparatus, method of manufacturing semiconductor device and method of cleaning processing vessel
TWI535885B (zh) A substrate processing apparatus, and a method of manufacturing the semiconductor device
TWI559369B (zh) A substrate processing apparatus, a manufacturing method and a program for a semiconductor device
JP2009544849A (ja) 膜形成装置のクリーニング方法および膜形成装置
JPH04245627A (ja) クリーニング方法
TWI546847B (zh) 基板處理裝置及半導體裝置的製造方法
JP2016048705A (ja) 基板処理装置、半導体装置の製造方法、プログラム、記録媒体
TW588402B (en) Cleaning method of substrate treating apparatus, and substrate treating apparatus
US10672617B2 (en) Etching method and etching apparatus
JP3897165B2 (ja) 半導体装置の製造方法及び基板処理装置
JP4348835B2 (ja) クリーニング方法
JP3527231B2 (ja) 基板処理装置のクリーニング方法
JP2002008991A (ja) クリーニング方法
JP2013199673A (ja) 酸化ルテニウム膜の成膜方法および酸化ルテニウム膜成膜用処理容器のクリーニング方法
JP4418815B2 (ja) 半導体装置の製造方法及び基板処理装置
JP4529261B2 (ja) 複合金属酸化物膜の除去方法、クリーニング方法及びエッチング方法
JP2004343095A (ja) 熱処理装置のクリーニング方法
JP2012023138A (ja) 基板処理装置
JP2006108595A (ja) 半導体装置の製造方法
JP2007081169A (ja) 半導体装置の製造方法
JP2008211106A (ja) 半導体装置の製造方法、及び基板処理装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees