JP4754080B2 - 基板処理装置のクリーニング方法及び基板処理装置 - Google Patents

基板処理装置のクリーニング方法及び基板処理装置 Download PDF

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Publication number
JP4754080B2
JP4754080B2 JP2001072711A JP2001072711A JP4754080B2 JP 4754080 B2 JP4754080 B2 JP 4754080B2 JP 2001072711 A JP2001072711 A JP 2001072711A JP 2001072711 A JP2001072711 A JP 2001072711A JP 4754080 B2 JP4754080 B2 JP 4754080B2
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JP
Japan
Prior art keywords
processing chamber
processing apparatus
cleaning
substrate processing
substrate
Prior art date
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Expired - Fee Related
Application number
JP2001072711A
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English (en)
Japanese (ja)
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JP2002270597A5 (https=
JP2002270597A (ja
Inventor
康弘 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority to JP2001072711A priority Critical patent/JP4754080B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020037011870A priority patent/KR100570250B1/ko
Priority to PCT/JP2002/002008 priority patent/WO2002073675A1/ja
Priority to CNB028054709A priority patent/CN1322558C/zh
Priority to US10/471,579 priority patent/US6893964B2/en
Priority to TW091104273A priority patent/TW588402B/zh
Publication of JP2002270597A publication Critical patent/JP2002270597A/ja
Publication of JP2002270597A5 publication Critical patent/JP2002270597A5/ja
Application granted granted Critical
Publication of JP4754080B2 publication Critical patent/JP4754080B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2001072711A 2001-03-14 2001-03-14 基板処理装置のクリーニング方法及び基板処理装置 Expired - Fee Related JP4754080B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001072711A JP4754080B2 (ja) 2001-03-14 2001-03-14 基板処理装置のクリーニング方法及び基板処理装置
PCT/JP2002/002008 WO2002073675A1 (fr) 2001-03-14 2002-03-05 Procede de nettoyage pour dispositif de traitement de substrat et dispositif de traitement de substrat
CNB028054709A CN1322558C (zh) 2001-03-14 2002-03-05 基板处理装置的清洁方法
US10/471,579 US6893964B2 (en) 2001-03-14 2002-03-05 Cleaning method for substrate treatment device and substrate treatment device
KR1020037011870A KR100570250B1 (ko) 2001-03-14 2002-03-05 기판 처리 장치의 클리닝 방법
TW091104273A TW588402B (en) 2001-03-14 2002-03-07 Cleaning method of substrate treating apparatus, and substrate treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001072711A JP4754080B2 (ja) 2001-03-14 2001-03-14 基板処理装置のクリーニング方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2002270597A JP2002270597A (ja) 2002-09-20
JP2002270597A5 JP2002270597A5 (https=) 2008-05-01
JP4754080B2 true JP4754080B2 (ja) 2011-08-24

Family

ID=18930257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001072711A Expired - Fee Related JP4754080B2 (ja) 2001-03-14 2001-03-14 基板処理装置のクリーニング方法及び基板処理装置

Country Status (6)

Country Link
US (1) US6893964B2 (https=)
JP (1) JP4754080B2 (https=)
KR (1) KR100570250B1 (https=)
CN (1) CN1322558C (https=)
TW (1) TW588402B (https=)
WO (1) WO2002073675A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663059B2 (ja) * 2000-03-10 2011-03-30 東京エレクトロン株式会社 処理装置のクリーニング方法
KR100474565B1 (ko) * 2002-08-30 2005-03-10 삼성전자주식회사 소스 가스 공급 방법 및 장치
JP5259125B2 (ja) * 2006-08-24 2013-08-07 富士通セミコンダクター株式会社 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体
CN103028564A (zh) * 2011-09-30 2013-04-10 金宝电子（中国）有限公司 溶液供应单元、清洁系统及其清洁方法
JP6154677B2 (ja) * 2013-06-28 2017-06-28 東京エレクトロン株式会社 クリーニング方法及び処理装置
CN109585248B (zh) * 2013-12-02 2021-04-20 应用材料公司 用于原位清洁工艺腔室的方法和装置
JP5762602B1 (ja) * 2014-06-24 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
KR102128169B1 (ko) * 2018-10-03 2020-06-29 주식회사 코윈디에스티 가스 유량 조절 장치 및 이를 이용하는 레이저 화학기상증착 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149704A (en) * 1974-10-28 1976-04-30 Fuji Photo Film Co Ltd Jikikirokubaitaino seiho
US4393092A (en) * 1982-03-12 1983-07-12 Motorola, Inc. Method for controlling the conductivity of polyimide films and improved devices utilizing the method
JPS59218789A (ja) * 1983-05-06 1984-12-10 信越化学工業株式会社 フレキシブルプリント配線基板およびその製造方法
KR900014625A (ko) * 1989-03-20 1990-10-24 미다 가쓰시게 금속/유기 고분자 합성수지 복합체 및 이의 제조방법
JP3297974B2 (ja) * 1995-07-26 2002-07-02 ソニー株式会社 ペロブスカイト型酸化物薄膜のプラズマエッチング方法および半導体装置の製造方法
IL119598A0 (en) 1995-11-17 1997-02-18 Air Prod & Chem Plasma etch with trifluoroacetic acid or its derivatives
JP3689524B2 (ja) * 1996-03-22 2005-08-31 キヤノン株式会社 酸化アルミニウム膜及びその形成方法
JPH10223614A (ja) * 1997-02-12 1998-08-21 Daikin Ind Ltd エッチングガスおよびクリーニングガス
JPH10335318A (ja) * 1997-05-29 1998-12-18 Toshiba Corp 半導体製造装置のクリーニング方法
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
DE19833448C2 (de) 1998-07-24 2003-07-17 Infineon Technologies Ag Verfahren zur Reinigung von CVD-Anlagen

Also Published As

Publication number Publication date
KR100570250B1 (ko) 2006-04-12
WO2002073675A1 (fr) 2002-09-19
TW588402B (en) 2004-05-21
CN1322558C (zh) 2007-06-20
KR20030083730A (ko) 2003-10-30
JP2002270597A (ja) 2002-09-20
CN1620717A (zh) 2005-05-25
US20040115951A1 (en) 2004-06-17
US6893964B2 (en) 2005-05-17

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