TW584971B - Light-emitting semiconductor element on GaN basis and its epitaxial production method - Google Patents

Light-emitting semiconductor element on GaN basis and its epitaxial production method Download PDF

Info

Publication number
TW584971B
TW584971B TW090121292A TW90121292A TW584971B TW 584971 B TW584971 B TW 584971B TW 090121292 A TW090121292 A TW 090121292A TW 90121292 A TW90121292 A TW 90121292A TW 584971 B TW584971 B TW 584971B
Authority
TW
Taiwan
Prior art keywords
layer
epitaxial
item
patent application
gan
Prior art date
Application number
TW090121292A
Other languages
English (en)
Chinese (zh)
Inventor
Stefan Bader
Michael Fehrer
Berthold Hahn
Volker Haerle
Hans-Juergen Lugauer
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Application granted granted Critical
Publication of TW584971B publication Critical patent/TW584971B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
TW090121292A 2000-08-31 2001-08-30 Light-emitting semiconductor element on GaN basis and its epitaxial production method TW584971B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10042947A DE10042947A1 (de) 2000-08-31 2000-08-31 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis

Publications (1)

Publication Number Publication Date
TW584971B true TW584971B (en) 2004-04-21

Family

ID=7654526

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090121292A TW584971B (en) 2000-08-31 2001-08-30 Light-emitting semiconductor element on GaN basis and its epitaxial production method

Country Status (7)

Country Link
US (2) US6849878B2 (de)
EP (1) EP1314209B1 (de)
JP (2) JP4177097B2 (de)
CN (1) CN1471735B (de)
DE (1) DE10042947A1 (de)
TW (1) TW584971B (de)
WO (1) WO2002019439A1 (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
JP2003533030A (ja) * 2000-04-26 2003-11-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ＧａＮをベースとする発光ダイオードチップおよび発光ダイオード構造素子の製造法
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP4250909B2 (ja) * 2002-05-20 2009-04-08 ソニー株式会社 半導体素子の分離方法および転写方法
GB2388957A (en) * 2002-05-24 2003-11-26 Imp College Innovations Ltd Quantum dots for extended wavelength operation
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
TWI243488B (en) 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
DE10350707B4 (de) * 2003-02-26 2014-02-13 Osram Opto Semiconductors Gmbh Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung
WO2004100279A2 (en) * 2003-04-30 2004-11-18 Cree, Inc. High-power solid state light emitter package
WO2004114368A2 (en) * 2003-06-13 2004-12-29 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University METHOD FOR PREPARING GE1-x-ySnxEy (E=P, As, Sb) SEMICONDUCTORS AND RELATED Si-Ge-Sn-E AND Si-Ge-E ANALOGS
US7589003B2 (en) * 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
JP4218597B2 (ja) 2003-08-08 2009-02-04 住友電気工業株式会社 半導体発光素子の製造方法
JP4110222B2 (ja) 2003-08-20 2008-07-02 住友電気工業株式会社 発光ダイオード
EP1569263B1 (de) 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
KR100631980B1 (ko) * 2005-04-06 2006-10-11 삼성전기주식회사 질화물 반도체 소자
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
CN1988109B (zh) * 2005-12-21 2012-03-21 弗赖贝格化合物原料有限公司 生产自支撑iii-n层和自支撑iii-n基底的方法
US20070194342A1 (en) * 2006-01-12 2007-08-23 Kinzer Daniel M GaN SEMICONDUCTOR DEVICE AND PROCESS EMPLOYING GaN ON THIN SAPHIRE LAYER ON POLYCRYSTALLINE SILICON CARBIDE
EP2033235B1 (de) 2006-05-26 2017-06-21 Cree, Inc. Festkörper-leuchtbauelement
WO2007142946A2 (en) 2006-05-31 2007-12-13 Cree Led Lighting Solutions, Inc. Lighting device and method of lighting
TW200802941A (en) * 2006-06-22 2008-01-01 Univ Nat Central A quantum photoelectric element of antimony compound
DE102006060410A1 (de) * 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
US7885306B2 (en) * 2006-06-30 2011-02-08 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser chip
KR20090048640A (ko) * 2006-08-23 2009-05-14 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치 및 조명 방법
EP2064489B1 (de) * 2006-09-23 2019-01-02 YLX Incorporated Helligkeitsverstärkungsverfahren und -vorrichtung für lichtemittierende dioden
WO2008070604A1 (en) * 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
EP2095011A1 (de) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Beleuchtungsanordnung und beleuchtungsverfahren
US8026517B2 (en) * 2007-05-10 2011-09-27 Industrial Technology Research Institute Semiconductor structures
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
JP5431320B2 (ja) * 2007-07-17 2014-03-05 クリー インコーポレイテッド 内部光学機能を備えた光学素子およびその製造方法
KR100872678B1 (ko) 2007-07-23 2008-12-10 엘지이노텍 주식회사 반도체 발광소자의 제조 방법
JP4148367B1 (ja) 2007-08-02 2008-09-10 富山県 細胞のスクリーニング方法
US8617997B2 (en) 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
JP5212777B2 (ja) * 2007-11-28 2013-06-19 スタンレー電気株式会社 半導体発光装置及び照明装置
US20110114022A1 (en) * 2007-12-12 2011-05-19 Veeco Instruments Inc. Wafer carrier with hub
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
DE102009060749B4 (de) * 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
US8997832B1 (en) 2010-11-23 2015-04-07 Western Digital (Fremont), Llc Method of fabricating micrometer scale components
US20130330911A1 (en) * 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US10134727B2 (en) 2012-09-28 2018-11-20 Intel Corporation High breakdown voltage III-N depletion mode MOS capacitors
US9064709B2 (en) * 2012-09-28 2015-06-23 Intel Corporation High breakdown voltage III-N depletion mode MOS capacitors
WO2014093555A1 (en) * 2012-12-11 2014-06-19 Massachusetts Institute Of Technology Reducing leakage current in semiconductor devices
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
DE102014116141B4 (de) 2014-11-05 2022-07-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement
DE102017108385A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern
TWI637481B (zh) * 2017-11-29 2018-10-01 財團法人工業技術研究院 半導體結構、發光裝置及其製造方法
RU2700709C1 (ru) * 2018-02-12 2019-09-19 Открытое Акционерное Общество "Пеленг" Способ определения отклонений реальных метеорологических условий от табличных, учитываемых при расчете установок для стрельбы артиллерии
DE102018104785A1 (de) * 2018-03-02 2019-09-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von transferierbaren Bauteilen und Bauteilverbund aus Bauteilen
DE102018104778A1 (de) * 2018-03-02 2019-09-05 Osram Opto Semiconductors Gmbh Bauteilverbund aus optischen Bauteilen, Verfahren zur Herstellung eines Bauteilverbunds und Bauelement mit einem optischen Bauteil

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760790B2 (ja) * 1987-05-13 1995-06-28 シャープ株式会社 化合物半導体基板
US4912532A (en) * 1988-08-26 1990-03-27 Hewlett-Packard Company Electro-optical device with inverted transparent substrate and method for making same
JP2542447B2 (ja) * 1990-04-13 1996-10-09 三菱電機株式会社 太陽電池およびその製造方法
US5244818A (en) * 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5286335A (en) * 1992-04-08 1994-02-15 Georgia Tech Research Corporation Processes for lift-off and deposition of thin film materials
US5391257A (en) * 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JP2669368B2 (ja) * 1994-03-16 1997-10-27 日本電気株式会社 Ｓｉ基板上化合物半導体積層構造の製造方法
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP3182346B2 (ja) * 1995-08-31 2001-07-03 株式会社東芝 青色発光素子及びその製造方法
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
JP3409958B2 (ja) * 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5985687A (en) 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
JPH1022226A (ja) * 1996-07-05 1998-01-23 Super Silicon Kenkyusho:Kk エピタキシャルウエハ製造方法及び装置
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3214367B2 (ja) 1996-08-12 2001-10-02 豊田合成株式会社 半導体発光素子の製造方法
JPH10215035A (ja) 1997-01-30 1998-08-11 Toshiba Corp 化合物半導体素子及びその製造方法
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
JP3914615B2 (ja) 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法
US6033995A (en) * 1997-09-16 2000-03-07 Trw Inc. Inverted layer epitaxial liftoff process
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JPH11145515A (ja) * 1997-11-10 1999-05-28 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
US6599133B2 (en) * 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
JPH11284228A (ja) * 1998-03-30 1999-10-15 Toyoda Gosei Co Ltd 半導体素子
JP4126749B2 (ja) * 1998-04-22 2008-07-30 ソニー株式会社 半導体装置の製造方法
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6329063B2 (en) * 1998-12-11 2001-12-11 Nova Crystals, Inc. Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
US6328796B1 (en) * 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6455398B1 (en) * 1999-07-16 2002-09-24 Massachusetts Institute Of Technology Silicon on III-V semiconductor bonding for monolithic optoelectronic integration
US6214733B1 (en) * 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials
US6646292B2 (en) * 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
US6495867B1 (en) * 2000-07-26 2002-12-17 Axt, Inc. InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US6583034B2 (en) * 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6498073B2 (en) * 2001-01-02 2002-12-24 Honeywell International Inc. Back illuminated imager with enhanced UV to near IR sensitivity
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
JP4211256B2 (ja) * 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates

Also Published As

Publication number Publication date
JP4177097B2 (ja) 2008-11-05
JP5183085B2 (ja) 2013-04-17
WO2002019439A1 (de) 2002-03-07
EP1314209B1 (de) 2012-10-03
JP2004508720A (ja) 2004-03-18
JP2007201493A (ja) 2007-08-09
US20050104083A1 (en) 2005-05-19
DE10042947A1 (de) 2002-03-21
CN1471735B (zh) 2010-05-26
US7105370B2 (en) 2006-09-12
EP1314209A1 (de) 2003-05-28
US20030197170A1 (en) 2003-10-23
US6849878B2 (en) 2005-02-01
CN1471735A (zh) 2004-01-28

Similar Documents

Publication Publication Date Title
TW584971B (en) Light-emitting semiconductor element on GaN basis and its epitaxial production method
JP5734190B2 (ja) 複合基板上に成長された半導体発光デバイス
JP5021302B2 (ja) 半導体チップの製造方法
US6100104A (en) Method for fabricating a plurality of semiconductor bodies
EP2743966B1 (de) Epitaxialschichtwafer mit Leerstelle zur Trennung eines Wachstumssubstrats davon und damit hergestellte Halbleitervorrichtung
JP6307547B2 (ja) 光抽出構造を含む半導体発光装置及び方法
TWI415287B (zh) 發光裝置結構
JP2004336040A (ja) 複数の半導体チップの製造方法および電子半導体基体
CN100386845C (zh) 有氮化物半导体薄膜的基底及该薄膜的生长方法
JP2014057076A (ja) 歪みが低減された発光層を備えるｉｉｉ−窒化物発光デバイス
JPH10321911A (ja) 単結晶シリコン上に化合物半導体のエピタキシヤル層を製造する方法及びそれにより製造された発光ダイオード
JP2007067418A (ja) 二重ヘテロ構造の発光領域を有するｉｉｉ族窒化物発光デバイス
KR20220140890A (ko) 반도체 구조체 및 제작 방법
JP4980616B2 (ja) 半導体チップを製作するための方法
JP2004503096A (ja) ＩｎＧａＮベースの発光ダイオードチップ及びその製造方法
CN115579437A (zh) 一种外延芯片结构
KR20150015760A (ko) 발광 소자 제조용 템플릿 및 자외선 발광소자 제조 방법
JP2023547246A (ja) 半導体ボディを製造する方法および半導体デバイス
US20210043460A1 (en) Manufacturing method of a semiconductor substrate
WO2022104789A1 (zh) 谐振腔发光二极管的制备方法
TWI246784B (en) Light emitting diode and manufacturing method thereof
JP4479388B2 (ja) 半導体発光素子の製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent