TW548855B - Trench Schottky rectifier - Google Patents
Trench Schottky rectifier Download PDFInfo
- Publication number
- TW548855B TW548855B TW091111744A TW91111744A TW548855B TW 548855 B TW548855 B TW 548855B TW 091111744 A TW091111744 A TW 091111744A TW 91111744 A TW91111744 A TW 91111744A TW 548855 B TW548855 B TW 548855B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- patent application
- semiconductor region
- kentky
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000011049 filling Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000000875 corresponding effect Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
- H10D8/605—Schottky-barrier diodes of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/872,926 US6580141B2 (en) | 2001-06-01 | 2001-06-01 | Trench schottky rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW548855B true TW548855B (en) | 2003-08-21 |
Family
ID=25360613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091111744A TW548855B (en) | 2001-06-01 | 2002-05-31 | Trench Schottky rectifier |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6580141B2 (enExample) |
| EP (1) | EP1393379B1 (enExample) |
| JP (1) | JP4313190B2 (enExample) |
| KR (1) | KR100884077B1 (enExample) |
| CN (1) | CN1280915C (enExample) |
| TW (1) | TW548855B (enExample) |
| WO (1) | WO2002099889A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6707127B1 (en) * | 2000-08-31 | 2004-03-16 | General Semiconductor, Inc. | Trench schottky rectifier |
| US7033876B2 (en) * | 2001-07-03 | 2006-04-25 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
| US20060038223A1 (en) * | 2001-07-03 | 2006-02-23 | Siliconix Incorporated | Trench MOSFET having drain-drift region comprising stack of implanted regions |
| US7009247B2 (en) * | 2001-07-03 | 2006-03-07 | Siliconix Incorporated | Trench MIS device with thick oxide layer in bottom of gate contact trench |
| US7291884B2 (en) * | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
| US7323402B2 (en) * | 2002-07-11 | 2008-01-29 | International Rectifier Corporation | Trench Schottky barrier diode with differential oxide thickness |
| US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| JP4538211B2 (ja) * | 2003-10-08 | 2010-09-08 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
| DE102004058431B4 (de) * | 2003-12-05 | 2021-02-18 | Infineon Technologies Americas Corp. | III-Nitrid Halbleitervorrichtung mit Grabenstruktur |
| US7098521B2 (en) * | 2004-10-01 | 2006-08-29 | International Business Machines Corporation | Reduced guard ring in schottky barrier diode structure |
| DE102004056663A1 (de) * | 2004-11-24 | 2006-06-01 | Robert Bosch Gmbh | Halbleitereinrichtung und Gleichrichteranordnung |
| EP1681725A1 (fr) * | 2005-01-18 | 2006-07-19 | St Microelectronics S.A. | Composant unipolaire vertical à faible courant de fuite |
| US8039328B2 (en) * | 2005-10-18 | 2011-10-18 | International Rectifier Corporation | Trench Schottky device with single barrier |
| JP5457035B2 (ja) | 2006-01-20 | 2014-04-02 | ジンマー テクノロジー，インコーポレイティド | 肩関節形成術システム |
| US20090053864A1 (en) * | 2007-08-23 | 2009-02-26 | Jinping Liu | Method for fabricating a semiconductor structure having heterogeneous crystalline orientations |
| US7741693B1 (en) | 2007-11-16 | 2010-06-22 | National Semiconductor Corporation | Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices |
| US20090309181A1 (en) * | 2008-06-12 | 2009-12-17 | Force Mos Technology Co. Ltd. | Trench schottky with multiple epi structure |
| US7750412B2 (en) * | 2008-08-06 | 2010-07-06 | Fairchild Semiconductor Corporation | Rectifier with PN clamp regions under trenches |
| TWI455209B (zh) | 2009-10-12 | 2014-10-01 | Pfc Device Co | 溝渠式金氧半ｐ－ｎ接面蕭基二極體結構及其製作方法 |
| CN101800252B (zh) * | 2010-03-04 | 2012-05-30 | 无锡新洁能功率半导体有限公司 | 沟槽型肖特基势垒整流器及其制造方法 |
| CN101853850B (zh) * | 2010-03-17 | 2011-10-26 | 无锡新洁能功率半导体有限公司 | 一种超势垒半导体整流器件及其制造方法 |
| DE102010028203A1 (de) * | 2010-04-26 | 2011-10-27 | Robert Bosch Gmbh | Gleichrichter-Brückenschaltung |
| CN106057801A (zh) * | 2011-01-07 | 2016-10-26 | 英飞凌科技奥地利有限公司 | 具有第一半导体器件并具有多个第二半导体器件的半导体器件装置 |
| JP2013030618A (ja) * | 2011-07-28 | 2013-02-07 | Rohm Co Ltd | 半導体装置 |
| US9059329B2 (en) * | 2011-08-22 | 2015-06-16 | Monolithic Power Systems, Inc. | Power device with integrated Schottky diode and method for making the same |
| WO2013077954A1 (en) | 2011-11-23 | 2013-05-30 | Acorn Technologies, Inc. | Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers |
| CN102916055B (zh) * | 2012-10-11 | 2014-12-24 | 杭州立昂微电子股份有限公司 | 一种沟槽肖特基势垒二极管及其制造方法 |
| CN103035751A (zh) * | 2012-11-23 | 2013-04-10 | 上海华虹Nec电子有限公司 | 肖特基二极管 |
| JP5922014B2 (ja) * | 2012-12-27 | 2016-05-24 | 新電元工業株式会社 | トレンチショットキバリアダイオード及びその製造方法 |
| CN104183485B (zh) * | 2013-05-23 | 2017-11-10 | 上海宝芯源功率半导体有限公司 | 一种超级势垒整流器结构及其制作方法 |
| TWI514578B (zh) * | 2013-06-21 | 2015-12-21 | Chip Integration Tech Co Ltd | 雙溝渠式整流器及其製造方法 |
| US20150017774A1 (en) * | 2013-07-10 | 2015-01-15 | Globalfoundries Inc. | Method of forming fins with recess shapes |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| WO2018094205A1 (en) | 2016-11-18 | 2018-05-24 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
| JP2017063237A (ja) * | 2017-01-13 | 2017-03-30 | ローム株式会社 | 半導体装置 |
| CN107256886A (zh) * | 2017-07-12 | 2017-10-17 | 付妮娜 | 沟槽式肖特基二极管及其制作方法 |
| US11251282B2 (en) * | 2018-02-09 | 2022-02-15 | Mitsubishi Electric Corporation | Power semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4822390B1 (enExample) * | 1969-03-18 | 1973-07-05 | ||
| JPS5294773A (en) * | 1976-02-05 | 1977-08-09 | Sumitomo Electric Ind Ltd | Semiconductor element and its manufacture |
| US4835580A (en) * | 1987-04-30 | 1989-05-30 | Texas Instruments Incorporated | Schottky barrier diode and method |
| US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
| US6078090A (en) * | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
| US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| US5883422A (en) * | 1996-06-28 | 1999-03-16 | The Whitaker Corporation | Reduced parasitic capacitance semiconductor devices |
| JP3502531B2 (ja) * | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US6184563B1 (en) * | 1998-07-27 | 2001-02-06 | Ho-Yuan Yu | Device structure for providing improved Schottky barrier rectifier |
| US6252258B1 (en) * | 1999-08-10 | 2001-06-26 | Rockwell Science Center Llc | High power rectifier |
| JP2001085686A (ja) * | 1999-09-13 | 2001-03-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2001094094A (ja) * | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
-
2001
- 2001-06-01 US US09/872,926 patent/US6580141B2/en not_active Expired - Lifetime
-
2002
- 2002-05-31 WO PCT/US2002/017322 patent/WO2002099889A1/en not_active Ceased
- 2002-05-31 CN CNB028111443A patent/CN1280915C/zh not_active Expired - Lifetime
- 2002-05-31 JP JP2003502893A patent/JP4313190B2/ja not_active Expired - Lifetime
- 2002-05-31 EP EP02739587A patent/EP1393379B1/en not_active Expired - Lifetime
- 2002-05-31 TW TW091111744A patent/TW548855B/zh not_active IP Right Cessation
- 2002-05-31 KR KR1020037015603A patent/KR100884077B1/ko not_active Expired - Lifetime
-
2003
- 2003-05-05 US US10/429,817 patent/US6770548B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100884077B1 (ko) | 2009-02-19 |
| WO2002099889A1 (en) | 2002-12-12 |
| CN1280915C (zh) | 2006-10-18 |
| EP1393379B1 (en) | 2011-12-21 |
| US20020179993A1 (en) | 2002-12-05 |
| US20030193074A1 (en) | 2003-10-16 |
| CN1520615A (zh) | 2004-08-11 |
| US6580141B2 (en) | 2003-06-17 |
| EP1393379A4 (en) | 2009-08-12 |
| KR20040005998A (ko) | 2004-01-16 |
| JP4313190B2 (ja) | 2009-08-12 |
| EP1393379A1 (en) | 2004-03-03 |
| US6770548B2 (en) | 2004-08-03 |
| JP2004529506A (ja) | 2004-09-24 |
| WO2002099889A9 (en) | 2004-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW548855B (en) | Trench Schottky rectifier | |
| TW523933B (en) | Trench schottky rectifier | |
| JP2004529506A5 (enExample) | ||
| US6844251B2 (en) | Method of forming a semiconductor device with a junction termination layer | |
| TW571445B (en) | Schottky rectifier and method for forming same | |
| US12224321B2 (en) | Scalable MPS device based on SiC | |
| CN114284348A (zh) | 一种终端结构、制作方法以及功率器件 | |
| CN115411095B (zh) | 具有介电调控混合场板终端的sbd结构及其制备方法 | |
| US20050045982A1 (en) | Semiconductor device with novel junction termination | |
| JP7284721B2 (ja) | ダイオード | |
| JP2005136064A (ja) | 半導体装置 | |
| TWI795286B (zh) | 浮動保護環耐壓的穩定方法 | |
| CN119584557B (zh) | 一种具有周期性复合型阳极的宽禁带功率二极管 | |
| JP7198931B2 (ja) | パワー半導体デバイス及びその製造方法 | |
| CN119317124A (zh) | 一种氧化镓结势垒肖特基二极管及其制备方法 | |
| CN115775730B (zh) | 一种准垂直结构GaN肖特基二极管及其制备方法 | |
| CN111477691B (zh) | 高耐压的氮化镓二极管及其制作方法 | |
| CN105810756A (zh) | 一种混合pin肖特基二极管及其制备方法 | |
| CN119604007B (zh) | 一种功率器件及其制作方法 | |
| CN111508955B (zh) | 高反向耐压的氮化镓整流器及其制作方法 | |
| CN108022968A (zh) | 一种沟槽肖特基半导体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |