JP4313190B2 - ショットキー整流器 - Google Patents

ショットキー整流器 Download PDF

Info

Publication number
JP4313190B2
JP4313190B2 JP2003502893A JP2003502893A JP4313190B2 JP 4313190 B2 JP4313190 B2 JP 4313190B2 JP 2003502893 A JP2003502893 A JP 2003502893A JP 2003502893 A JP2003502893 A JP 2003502893A JP 4313190 B2 JP4313190 B2 JP 4313190B2
Authority
JP
Japan
Prior art keywords
region
layer
vapor deposition
insulating layer
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003502893A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004529506A5 (enExample
JP2004529506A (ja
Inventor
フシエフ、フュー−イウアン
ソー、クーン、チョング
Original Assignee
ゼネラル セミコンダクター，インク．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ゼネラル セミコンダクター，インク． filed Critical ゼネラル セミコンダクター，インク．
Publication of JP2004529506A publication Critical patent/JP2004529506A/ja
Publication of JP2004529506A5 publication Critical patent/JP2004529506A5/ja
Application granted granted Critical
Publication of JP4313190B2 publication Critical patent/JP4313190B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2003502893A 2001-06-01 2002-05-31 ショットキー整流器 Expired - Lifetime JP4313190B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/872,926 US6580141B2 (en) 2001-06-01 2001-06-01 Trench schottky rectifier
PCT/US2002/017322 WO2002099889A1 (en) 2001-06-01 2002-05-31 Trench schottky rectifier

Publications (3)

Publication Number Publication Date
JP2004529506A JP2004529506A (ja) 2004-09-24
JP2004529506A5 JP2004529506A5 (enExample) 2006-01-05
JP4313190B2 true JP4313190B2 (ja) 2009-08-12

Family

ID=25360613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003502893A Expired - Lifetime JP4313190B2 (ja) 2001-06-01 2002-05-31 ショットキー整流器

Country Status (7)

Country Link
US (2) US6580141B2 (enExample)
EP (1) EP1393379B1 (enExample)
JP (1) JP4313190B2 (enExample)
KR (1) KR100884077B1 (enExample)
CN (1) CN1280915C (enExample)
TW (1) TW548855B (enExample)
WO (1) WO2002099889A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
JP4538211B2 (ja) * 2003-10-08 2010-09-08 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
DE102004058431B4 (de) * 2003-12-05 2021-02-18 Infineon Technologies Americas Corp. III-Nitrid Halbleitervorrichtung mit Grabenstruktur
US7098521B2 (en) * 2004-10-01 2006-08-29 International Business Machines Corporation Reduced guard ring in schottky barrier diode structure
DE102004056663A1 (de) * 2004-11-24 2006-06-01 Robert Bosch Gmbh Halbleitereinrichtung und Gleichrichteranordnung
EP1681725A1 (fr) * 2005-01-18 2006-07-19 St Microelectronics S.A. Composant unipolaire vertical à faible courant de fuite
US8039328B2 (en) * 2005-10-18 2011-10-18 International Rectifier Corporation Trench Schottky device with single barrier
JP5457035B2 (ja) 2006-01-20 2014-04-02 ジンマー テクノロジー，インコーポレイティド 肩関節形成術システム
US20090053864A1 (en) * 2007-08-23 2009-02-26 Jinping Liu Method for fabricating a semiconductor structure having heterogeneous crystalline orientations
US7741693B1 (en) 2007-11-16 2010-06-22 National Semiconductor Corporation Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices
US20090309181A1 (en) * 2008-06-12 2009-12-17 Force Mos Technology Co. Ltd. Trench schottky with multiple epi structure
US7750412B2 (en) * 2008-08-06 2010-07-06 Fairchild Semiconductor Corporation Rectifier with PN clamp regions under trenches
TWI455209B (zh) 2009-10-12 2014-10-01 Pfc Device Co 溝渠式金氧半ｐ－ｎ接面蕭基二極體結構及其製作方法
CN101800252B (zh) * 2010-03-04 2012-05-30 无锡新洁能功率半导体有限公司 沟槽型肖特基势垒整流器及其制造方法
CN101853850B (zh) * 2010-03-17 2011-10-26 无锡新洁能功率半导体有限公司 一种超势垒半导体整流器件及其制造方法
DE102010028203A1 (de) * 2010-04-26 2011-10-27 Robert Bosch Gmbh Gleichrichter-Brückenschaltung
CN106057801A (zh) * 2011-01-07 2016-10-26 英飞凌科技奥地利有限公司 具有第一半导体器件并具有多个第二半导体器件的半导体器件装置
JP2013030618A (ja) * 2011-07-28 2013-02-07 Rohm Co Ltd 半導体装置
US9059329B2 (en) * 2011-08-22 2015-06-16 Monolithic Power Systems, Inc. Power device with integrated Schottky diode and method for making the same
WO2013077954A1 (en) 2011-11-23 2013-05-30 Acorn Technologies, Inc. Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
CN102916055B (zh) * 2012-10-11 2014-12-24 杭州立昂微电子股份有限公司 一种沟槽肖特基势垒二极管及其制造方法
CN103035751A (zh) * 2012-11-23 2013-04-10 上海华虹Nec电子有限公司 肖特基二极管
JP5922014B2 (ja) * 2012-12-27 2016-05-24 新電元工業株式会社 トレンチショットキバリアダイオード及びその製造方法
CN104183485B (zh) * 2013-05-23 2017-11-10 上海宝芯源功率半导体有限公司 一种超级势垒整流器结构及其制作方法
TWI514578B (zh) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd 雙溝渠式整流器及其製造方法
US20150017774A1 (en) * 2013-07-10 2015-01-15 Globalfoundries Inc. Method of forming fins with recess shapes
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
JP2017063237A (ja) * 2017-01-13 2017-03-30 ローム株式会社 半導体装置
CN107256886A (zh) * 2017-07-12 2017-10-17 付妮娜 沟槽式肖特基二极管及其制作方法
US11251282B2 (en) * 2018-02-09 2022-02-15 Mitsubishi Electric Corporation Power semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822390B1 (enExample) * 1969-03-18 1973-07-05
JPS5294773A (en) * 1976-02-05 1977-08-09 Sumitomo Electric Ind Ltd Semiconductor element and its manufacture
US4835580A (en) * 1987-04-30 1989-05-30 Texas Instruments Incorporated Schottky barrier diode and method
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US5883422A (en) * 1996-06-28 1999-03-16 The Whitaker Corporation Reduced parasitic capacitance semiconductor devices
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6184563B1 (en) * 1998-07-27 2001-02-06 Ho-Yuan Yu Device structure for providing improved Schottky barrier rectifier
US6252258B1 (en) * 1999-08-10 2001-06-26 Rockwell Science Center Llc High power rectifier
JP2001085686A (ja) * 1999-09-13 2001-03-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR100884077B1 (ko) 2009-02-19
WO2002099889A1 (en) 2002-12-12
TW548855B (en) 2003-08-21
CN1280915C (zh) 2006-10-18
EP1393379B1 (en) 2011-12-21
US20020179993A1 (en) 2002-12-05
US20030193074A1 (en) 2003-10-16
CN1520615A (zh) 2004-08-11
US6580141B2 (en) 2003-06-17
EP1393379A4 (en) 2009-08-12
KR20040005998A (ko) 2004-01-16
EP1393379A1 (en) 2004-03-03
US6770548B2 (en) 2004-08-03
JP2004529506A (ja) 2004-09-24
WO2002099889A9 (en) 2004-04-08

Similar Documents

Publication Publication Date Title
JP4313190B2 (ja) ショットキー整流器
JP2004529506A5 (enExample)
JP4855636B2 (ja) トレンチショットキー整流器
TWI441342B (zh) 用於碳化矽裝置之邊緣終止結構及含該終止結構之碳化矽裝置之製造方法
US6673662B2 (en) Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
TWI441340B (zh) 無需利用附加遮罩來製造的積體有肖特基二極體的平面ｍｏｓｆｅｔ及其佈局方法
US9059284B2 (en) Semiconductor device
US7491633B2 (en) High switching speed two mask schottky diode with high field breakdown
US6998694B2 (en) High switching speed two mask Schottky diode with high field breakdown
US6740951B2 (en) Two-mask trench schottky diode
US10797182B2 (en) Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
JP2004521487A (ja) トレンチショットキーバリア整流器
US20230307556A1 (en) Silicon carbide semiconductor device
US20060131686A1 (en) LOCOS-based junction-pinched schottky rectifier and its manufacturing methods
KR100483074B1 (ko) 쇼트키 다이오드 및 그 제조방법
CN118658886B (zh) 混合沟道SiC MOSFET及其制造方法
CN118800806B (zh) 一种带有突出p阱的umosfet器件及其制备方法
JP4715324B2 (ja) 整流素子
CN119153525A (zh) 一种源极沟槽侧壁集成SBD的SiC MOSFET及制备方法
CN111508955A (zh) 高反向耐压的氮化镓整流器及其制作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050519

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050519

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080331

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080819

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081119

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081127

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081219

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090105

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090119

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090414

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090514

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120522

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4313190

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130522

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term