TW529130B - Semiconductor integrated circuit device and process for manufacturing the same - Google Patents

Semiconductor integrated circuit device and process for manufacturing the same Download PDF

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Publication number
TW529130B
TW529130B TW090118891A TW90118891A TW529130B TW 529130 B TW529130 B TW 529130B TW 090118891 A TW090118891 A TW 090118891A TW 90118891 A TW90118891 A TW 90118891A TW 529130 B TW529130 B TW 529130B
Authority
TW
Taiwan
Prior art keywords
film
metal
aforementioned
forming
insulating film
Prior art date
Application number
TW090118891A
Other languages
English (en)
Chinese (zh)
Inventor
Shinpei Iijima
Yuzuru Ohji
Masato Kunitomo
Masahiko Hiratani
Yuichi Matsui
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW529130B publication Critical patent/TW529130B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10P14/69393—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10P14/6334—
    • H10P14/6529—
    • H10P14/6544—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW090118891A 2000-08-21 2001-08-02 Semiconductor integrated circuit device and process for manufacturing the same TW529130B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000249675A JP4150154B2 (ja) 2000-08-21 2000-08-21 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW529130B true TW529130B (en) 2003-04-21

Family

ID=18739385

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090118891A TW529130B (en) 2000-08-21 2001-08-02 Semiconductor integrated circuit device and process for manufacturing the same

Country Status (4)

Country Link
US (2) US6534375B2 (enExample)
JP (1) JP4150154B2 (enExample)
KR (1) KR100869559B1 (enExample)
TW (1) TW529130B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869559B1 (ko) * 2000-08-21 2008-11-21 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치 및 그 제조방법
TWI848144B (zh) * 2019-07-16 2024-07-11 日商東京威力科創股份有限公司 ＲｕＳｉ膜之形成方法及基板處理系統

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291868B1 (en) * 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
JP2002151657A (ja) * 2000-11-08 2002-05-24 Sanyo Electric Co Ltd 誘電体素子およびその製造方法
DE10114406A1 (de) * 2001-03-23 2002-10-02 Infineon Technologies Ag Verfahren zur Herstellung ferroelektrischer Speicherzellen
JP4781571B2 (ja) * 2001-07-31 2011-09-28 エルピーダメモリ株式会社 半導体装置の製造方法
JP2003078029A (ja) * 2001-08-31 2003-03-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6649504B2 (en) * 2001-12-14 2003-11-18 Thin Film Electronics Asa Method for fabricating high aspect ratio electrodes
JP4353685B2 (ja) * 2002-09-18 2009-10-28 株式会社ルネサステクノロジ 半導体装置
US6881681B2 (en) * 2002-11-22 2005-04-19 Freescale Semiconductor, Inc. Film deposition on a semiconductor wafer
EP1601957B1 (de) * 2003-03-07 2006-08-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Ionensensitiver feldeffekttransistor und verfahren zum herstellen eines ionensensitiven feldeffekttransistors
US7534709B2 (en) * 2003-05-29 2009-05-19 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
KR100604911B1 (ko) * 2004-10-20 2006-07-28 삼성전자주식회사 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법
JP4589092B2 (ja) * 2004-12-03 2010-12-01 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4446179B2 (ja) * 2005-02-02 2010-04-07 エルピーダメモリ株式会社 半導体装置の製造方法
JP2007081189A (ja) 2005-09-15 2007-03-29 Elpida Memory Inc 半導体記憶装置及びその製造方法
KR100672766B1 (ko) * 2005-12-27 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2007213772A (ja) * 2006-01-11 2007-08-23 Sony Corp 記録転送プログラム、記録転送装置及び記録転送方法
KR100760632B1 (ko) * 2006-03-03 2007-09-20 삼성전자주식회사 커패시터 형성 방법
JP5694625B2 (ja) * 2006-04-13 2015-04-01 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
US8129844B2 (en) * 2008-06-20 2012-03-06 International Business Machines Corporation Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices
US7851353B2 (en) * 2008-06-20 2010-12-14 International Business Machines Corporation Method of forming a metal silicide layer, devices incorporating metal silicide layers and design structures for the devices
JP2012204530A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体装置の製造方法
US8779546B1 (en) * 2013-03-07 2014-07-15 Sony Corporation Semiconductor memory system with bit line and method of manufacture thereof
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
US10428421B2 (en) * 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10153351B2 (en) 2016-01-29 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
DE102016125299B4 (de) 2016-01-29 2024-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US9595565B1 (en) * 2016-04-18 2017-03-14 Chang Gung University Memory structure
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
WO2017217132A1 (ja) * 2016-06-15 2017-12-21 ソニー株式会社 半導体装置、及び、半導体装置の製造方法
US9716223B1 (en) * 2016-07-07 2017-07-25 Winbond Electronics Corp. RRAM device and method for manufacturing the same
US9852990B1 (en) 2016-08-17 2017-12-26 International Business Machines Corporation Cobalt first layer advanced metallization for interconnects
US9859215B1 (en) 2016-08-17 2018-01-02 International Business Machines Corporation Formation of advanced interconnects
US9941212B2 (en) * 2016-08-17 2018-04-10 International Business Machines Corporation Nitridized ruthenium layer for formation of cobalt interconnects
US9716063B1 (en) 2016-08-17 2017-07-25 International Business Machines Corporation Cobalt top layer advanced metallization for interconnects
US10115670B2 (en) 2016-08-17 2018-10-30 International Business Machines Corporation Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer
CN108257957A (zh) * 2016-12-29 2018-07-06 联华电子股份有限公司 半导体结构及其制作方法
CN109216360B (zh) * 2017-07-07 2021-01-12 联华电子股份有限公司 半导体存储装置
KR20210057828A (ko) * 2018-10-09 2021-05-21 마이크론 테크놀로지, 인크 디바이스를 형성하는 방법, 및 관련 디바이스 및 전자 시스템
KR102735220B1 (ko) 2019-02-20 2024-11-27 삼성전자주식회사 집적회로 소자 및 그 제조 방법
US20230352524A1 (en) * 2020-07-23 2023-11-02 Nanya Technology Corporation Semiconductor device with air gap and boron nitride cap and method for preparing the same
KR20220081905A (ko) 2020-12-09 2022-06-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 증착용 실리콘 전구체
CN115223995B (zh) * 2021-04-20 2025-05-06 华邦电子股份有限公司 半导体存储器结构
KR102902644B1 (ko) 2021-10-05 2025-12-23 삼성전자주식회사 반도체 소자
US11935780B2 (en) * 2021-11-11 2024-03-19 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
KR20240003827A (ko) * 2022-07-04 2024-01-11 한양대학교 산학협력단 Dram 소자의 커패시터 및 그 제조 방법
CN115547819A (zh) * 2022-10-13 2022-12-30 长鑫存储技术有限公司 半导体结构的制作方法及半导体结构
US12477753B2 (en) * 2023-01-10 2025-11-18 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor device and fabricating method thereof
CN115955912B (zh) * 2023-01-17 2025-07-04 长鑫存储技术有限公司 一种半导体结构的制造方法及半导体结构
CN116322037A (zh) * 2023-03-10 2023-06-23 长鑫存储技术有限公司 半导体结构及其制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
JPH1079481A (ja) * 1996-09-05 1998-03-24 Mitsubishi Electric Corp 導電層接続構造およびその製造方法
JP3396144B2 (ja) 1997-01-23 2003-04-14 三菱電機株式会社 半導体記憶装置およびその製造方法
TW396610B (en) * 1997-12-06 2000-07-01 Samsung Electronics Co Ltd A capacitor formed by high dielectric constant stuff
US6177351B1 (en) * 1997-12-24 2001-01-23 Texas Instruments Incorporated Method and structure for etching a thin film perovskite layer
JPH11307736A (ja) 1998-04-22 1999-11-05 Sharp Corp 半導体メモリ素子の製造方法
KR20000007540A (ko) * 1998-07-03 2000-02-07 윤종용 커패시터 및 그의 제조 방법
JP2000040800A (ja) * 1998-07-24 2000-02-08 Sharp Corp 強誘電体記憶素子及びその製造方法
JP2000077620A (ja) * 1998-08-31 2000-03-14 Nec Corp Ｄｒａｍ及びその製造方法
KR100275752B1 (ko) * 1998-11-18 2000-12-15 윤종용 접합 스페이서를 구비한 컨케이브 커패시터의 제조방법
KR100505397B1 (ko) * 1998-12-30 2006-05-16 주식회사 하이닉스반도체 반도체메모리소자의캐패시터제조방법
US6421223B2 (en) * 1999-03-01 2002-07-16 Micron Technology, Inc. Thin film structure that may be used with an adhesion layer
US6391801B1 (en) * 1999-09-01 2002-05-21 Micron Technology, Inc. Method of forming a layer comprising tungsten oxide
US6339007B1 (en) * 2000-05-02 2002-01-15 International Business Machines Corporation Capacitor stack structure and method of fabricating description
JP4150154B2 (ja) * 2000-08-21 2008-09-17 株式会社ルネサステクノロジ 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869559B1 (ko) * 2000-08-21 2008-11-21 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치 및 그 제조방법
TWI848144B (zh) * 2019-07-16 2024-07-11 日商東京威力科創股份有限公司 ＲｕＳｉ膜之形成方法及基板處理系統

Also Published As

Publication number Publication date
US20020022357A1 (en) 2002-02-21
US6534375B2 (en) 2003-03-18
JP2002170940A (ja) 2002-06-14
JP4150154B2 (ja) 2008-09-17
US6720603B2 (en) 2004-04-13
US20030107073A1 (en) 2003-06-12
KR100869559B1 (ko) 2008-11-21
KR20020015298A (ko) 2002-02-27

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