TW527446B - Copper plating method - Google Patents
Copper plating method Download PDFInfo
- Publication number
- TW527446B TW527446B TW089107822A TW89107822A TW527446B TW 527446 B TW527446 B TW 527446B TW 089107822 A TW089107822 A TW 089107822A TW 89107822 A TW89107822 A TW 89107822A TW 527446 B TW527446 B TW 527446B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- sodium salt
- disulfide
- plating
- propyl
- Prior art date
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 65
- 239000010949 copper Substances 0.000 title claims abstract description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000007747 plating Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 30
- 239000000654 additive Substances 0.000 claims abstract description 19
- 230000000996 additive effect Effects 0.000 claims abstract description 12
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 9
- -1 sulfonyl propyl Chemical group 0.000 claims description 20
- 238000009713 electroplating Methods 0.000 claims description 19
- 159000000000 sodium salts Chemical class 0.000 claims description 19
- 239000002202 Polyethylene glycol Substances 0.000 claims description 13
- 229920001223 polyethylene glycol Polymers 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 10
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 8
- 150000002148 esters Chemical class 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 4
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- OVHHHVAVHBHXAK-UHFFFAOYSA-N n,n-diethylprop-2-enamide Chemical compound CCN(CC)C(=O)C=C OVHHHVAVHBHXAK-UHFFFAOYSA-N 0.000 claims description 3
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 3
- RIWZPKBKKYYMCQ-UHFFFAOYSA-N 1-(2-sulfopropyldisulfanyl)propane-2-sulfonic acid Chemical compound OS(=O)(=O)C(C)CSSCC(C)S(O)(=O)=O RIWZPKBKKYYMCQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000015655 Crocus sativus Nutrition 0.000 claims description 2
- 244000124209 Crocus sativus Species 0.000 claims description 2
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 claims description 2
- 229920002678 cellulose Polymers 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 239000004248 saffron Substances 0.000 claims description 2
- 235000013974 saffron Nutrition 0.000 claims description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims 4
- 239000004698 Polyethylene Substances 0.000 claims 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 2
- 229920000573 polyethylene Polymers 0.000 claims 2
- ZUFMFTGDCZKQRE-UHFFFAOYSA-N 2-hydroxy-3-[(2-hydroxy-3-sulfopropyl)disulfanyl]propane-1-sulfonic acid Chemical compound OS(=O)(=O)CC(O)CSSCC(O)CS(O)(=O)=O ZUFMFTGDCZKQRE-UHFFFAOYSA-N 0.000 claims 1
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical group OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 claims 1
- WHNPOQXWAMXPTA-UHFFFAOYSA-N 3-methylbut-2-enamide Chemical compound CC(C)=CC(N)=O WHNPOQXWAMXPTA-UHFFFAOYSA-N 0.000 claims 1
- LUENVHHLGFLMFJ-UHFFFAOYSA-N 4-[(4-sulfophenyl)disulfanyl]benzenesulfonic acid Chemical compound C1=CC(S(=O)(=O)O)=CC=C1SSC1=CC=C(S(O)(=O)=O)C=C1 LUENVHHLGFLMFJ-UHFFFAOYSA-N 0.000 claims 1
- 239000005711 Benzoic acid Substances 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 claims 1
- 235000010233 benzoic acid Nutrition 0.000 claims 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 claims 1
- WVHBDJAKIBJNJV-UHFFFAOYSA-N ethanamine;prop-2-enamide Chemical compound CCN.NC(=O)C=C WVHBDJAKIBJNJV-UHFFFAOYSA-N 0.000 claims 1
- 238000001125 extrusion Methods 0.000 claims 1
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- 229910052979 sodium sulfide Inorganic materials 0.000 claims 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 229940098465 tincture Drugs 0.000 claims 1
- 239000002932 luster Substances 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 32
- 238000001556 precipitation Methods 0.000 description 10
- 230000005611 electricity Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WMAZPKZPRMNATL-UHFFFAOYSA-N 5-sulfopentanoic acid Chemical compound OC(=O)CCCCS(O)(=O)=O WMAZPKZPRMNATL-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- YQKXNEWHNMPIKL-UHFFFAOYSA-N Dioxamine Natural products C1=C2OCOC2=CC(C=CC(NCCC=2C=C3OCOC3=CC=2)=O)=C1 YQKXNEWHNMPIKL-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 206010041235 Snoring Diseases 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- PJHUABJTDFXYRQ-UHFFFAOYSA-N benzoyl azide Chemical compound [N-]=[N+]=NC(=O)C1=CC=CC=C1 PJHUABJTDFXYRQ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- YTCQFLFGFXZUSN-BAQGIRSFSA-N microline Chemical compound OC12OC3(C)COC2(O)C(C(/Cl)=C/C)=CC(=O)C21C3C2 YTCQFLFGFXZUSN-BAQGIRSFSA-N 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0392—Pretreatment of metal, e.g. before finish plating, etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
527446 五、發明說明(1) 【發明領域】 本發明係有關於一種鍍銅方法, 線路板或晶圓的銅微細線 7 ·法可在多層印刷 藉由電解法而鑛銅。 丨層孔(Vla hGle)或溝内 【習知技術】 孔(vi::〇1K 銅微細線路之介層 分。、隹一,、+、A 係廣泛使用電解電鍍來施行銅雷 .仃述般電解電鍍之目的係為了形成可用來提古 刷線路板實際裝配密度之槽脊(la 曰^『印 路之連接信賴性等。 /、確保B曰0 U細線 一般而t ’進行電解銅電鑛時之順序係如以下所 欲在印刷線路板、晶圓等之不導電部份也鑛上電^ 了’可於不導電部份處利用無電解銅電鍍法或錢鍵法硐 ^PUttei^ng)來形成薄的銅層。如此,可確保讓原來 ^。的部伤亦具有導電性。接著,藉由將該經過上述 處理的被鍍物置於電解銅電鍍浴中以使其極化成陰極而 電解銅析出以完成銅電鍍。 讓 又,該電解銅電鍍液係使用以硫酸銅系及焦磷酸 等作代表之各種物質。但是,由於上述等電鍍液其共通目、 的皆為得到具有均一物性面以及優異外觀的銅電鍍層,故 一般都會再加入各種聚合物、光澤劑(brightener)以及 平坦劑(leveler )等之添加劑。亦即,藉由添加劑作為 實現控制析出結晶粒子及均一析出速度的方法。 但是,若使用含有習知添加劑之電解銅電鑛液的話, 527446 五、發明說明(2) __ 則在電解_ /[乍$/ 陽極電極側:加劑中之光澤劑成份亦會於 是特別顯著。而該現象在使用不溶性陽極時更 於雷# ν·ΛΛ 口為如此,所以電鍍液的壽命會變短,且由 故亦會二:i:”(conditi〇n)時時刻刻都在變化, -析出之“ 的析出狀態’因而產生了為了達成均 析出之^標所不希望發生的狀況。 為作i ί ϊ 結果造成了析出狀態變得較不&,因而成 介層孔或、、盖却&的主要原因。典型的析出狀態不良係指在 引i電二隹。中的底面部電流分佈不均一’且因為形狀效應 成盔法::I而僅於表層的銅部位優先產生銅析出,故造 ί層=1—析出狀態的狀況。在該情形下,-方面在 的^位S闵。内會產生空隙,另一方面也會生成析出不足 勺位,因而會使電路之連接信賴性顯著降低。 、# 一 11 i在電鍍液的組成狀態經常變化的情形下,戈欲 狀=。亦『的精密電鍍,就必須經常監督銅電鍍液的組成 έ0 L、。亦p,必須進行頻繁的溶液檢驗(check )。溶、夜 =成之檢驗若利用人工來做的話則嫌太煩雜,另一方奋面夜, 產:口:::化來對應之]旦會導致因設備成本過高而使 2降低之問題。並且近年來為了將該技術應用 於更U細的印刷電路板以及晶 微細電鍍法。 玟更而守求更精密的 【發明概要】 本案發明者等有鑑於此而經銳意研究的結果,笋 Μ電解銅電鍍液的壽命延長且讓銅電鍍液的組成變動極
527446 五、發明說明(3) — " ------ 雷^ ^法,終至完成以下埋設於介層孔以及溝部等内之鋼 电锻方法。 加在本發明進行時’本案發明者等係考慮到以下因素。 ^ 電錢液中之添加劑的光澤劑成份經常會在陽極侧氧 就t Γ ^而若找不到在陽極界面不分解之有效替代品的話 L 2 ί彳Τ止將添加劑加人銅電鍵液中,如此就無法對被梦 物作處理。 』I緞 鋼雷基於以上的觀點來進行研究,而把習知以來加入電解 雷=鍍液之添加劑改成在事前先使其吸附於被鍍物之命刷 板或晶圓等的介層孔或電路溝部等處,之後再施行電 =鋼電鍍來觀察之。將結果與習知的方法作比較,可得到 =較習知安定之銅電解析出,且電解電鍍液的壽命也變 因此,在申請專利範圍第丨項中所述之鍍銅方法的特 王在於:把在多層印刷線路板或晶圓的鋼微細線路之介層 孔或溝部等凹部藉由電解銅電鍍以包埋析出銅時所使用二 $電鍍液之添加劑,特別是光澤劑成份,預先吸附於被鍍 之後再於不含光澤劑成份的銅電破浴中進行電解電 錄。此處所謂的電解銅電鍍液,並未特別限定5凡可用於 電解銅電鍍之任何種類的物品皆可使用。 然後’在申請專利範圍第2項中所揭示者,係為在預 先及附於多層印刷線路板或晶圓的銅微細線路之介'層孔或 溝部等之光澤劑中可表現出極安定的機能者。亦即I係將 在光澤劑成份中添加一定量的一般所謂平垣劑成份以及聚
第6頁 527446 五、發明說明(4) 合劑成份之藥品所成的溶液預先添加在被鍍物中。也就是 說,把光澤劑成份當作主藥劑,再配合被鍍物的性質適當 加入平坦劑成份以及聚合物成份。因此,一般所稱之光澤 劑成份係以含有單一化合物的情形較多,但在本說明書中 則亦包含了混合以下所使用的複數種化合物成份者之概 念。 具體就如申請專利範圍第1項所述之預先吸附於被鑛 物上的光澤劑而言,可使用總濃度在〇 · 0 01〜;[〇克/升範圍 内之擇自由雙(3-磺基丙基)二硫化物或其2鈉鹽、雙 (2-磺基丙基)二硫化物或其2鈉鹽、雙(3-磺基—2—經丙 基)二硫化物或其2鈉鹽、雙(4-磺基丙基)二硫化物或 其2納鹽、雙(對靖基苯基)二硫化物或其2鈉鹽、(苯 並噻唾基-2 -硫代基)丙基績酸或其鈉鹽、n,n —二甲基-二 硫代氨基甲酸-(3-磺基丙基)—酯或其鈉鹽、〇—乙基—二 ΐ酸ί(3-磺基丙基)一醋或其鉀鹽、硫代尿素以及 生^斤組^族群中i種或2種以上成份。㈣度在〇· 001克/升以下時,就無法達到均一的吸附;反之 在1 0克/升以上的話,則得不到明顯的效果上升 又 物之二ΐ專;範圍第2項所述般,在吸附於㈣ 成份以及:二ϋ力°入習知添加於電鍍液中的聚合物 成伤u及千坦劑成伤。換言之,即把有 主藥劑,再對應被鑛物的性f配合使^物1 物及有機酸醯胺化合物。以此處所袖 3虱咼分子化合 可使用搵白由取r膝π 處所明的聚合物成份而言, 用擇自由…醇、幾基甲基纖維素、聚乙浠乙二
第7頁 527446 五、發明說明(5) 醇、聚丙烯乙二醇、硬脂酸-聚乙稀乙二醇酯、硬脂醯醇一 聚乙烯乙二醇酯、壬基苯酚-聚乙烯乙二醇酯、辛基苯酚一 聚乙烯乙二醇酯、聚乙烯—丙烯乙二醇以及-萘酚-聚乙 浠乙二醇酯等所組成之族群中1種或2種以上物質。而且, 聚合物濃度係以在〇 · 0 0丨〜i 〇克/升的範圍内較佳。因為在 該濃度範圍内可得到最均一的銅析出狀態。
以平坦劑之成份而言,可為有機酸醯胺及胺化合物, 而具體來說,可使用擇自由乙醯胺、丙醯胺、苯醯迭氮 (benzazide)、兩烯醯胺、甲基丙烯醯胺、N,N —二甲基 丙烯醯胺、N,N-二乙基曱基丙烯醯胺、N,N—二乙基丙烯醯 胺、Ν:Ν一二甲基甲基丙烯醯胺、N-(羥曱基)丙烯醯胺、 聚丙烯酸醯胺、聚丙烯酸醯胺加水合分解物、硫代黃素 (thioflavin)以及藏紅(“打㈣丨⑽)所組成之族群中1 種或2種以上物質。在吸附於被鍍物之光澤劑中含有該平 ^ ^ d的〉辰度係以在0· 001〜10克/升的範圍内 較佳。。因為在嗜、、曲ώ A ^ n 能。 /辰度範圍内可得到最均一的銅析出狀 光澤劑的吸附方、、表 _ 劑之溶液中的方法去,可採用將被鍍物浸泡於含有光澤 等適用於工程線上二ί洛法(showering)、喷洗噴霧法 以限制,只要能逵ΐ 。至於光澤劑的濃度則特別不加 被附獏的目的即可。t被電,表面上形成光澤劑之單分子 等重要因素後再決A 、可考置工程線之處理速度、經濟性 理過裎在以下稱之^:。「使光澤劑預先吸附於被鍍物上之處 為光澤劑吸附處理」。
527446 五、發明說明(6) 更進-步,纟申請專利範圍第3項中所揭示 =案發明之電解銅電鍍時所判斷出之最佳操 糸進 條件為:在銅電鍍浴之液溫為1〇〜6(pc以及電流密 该 铖1 ~ 1 OA/dm2的條件下施行電解。在該條件範圍下行+ 鍍,可得到良好的電鍍形狀及外觀。 進仃电 【發明之較佳實施例】 锋,—以下,就本發明之相關實施例進行詳細的說明。 貫施例 藉由在具有銅微細線路曰 認存在於直綠敗都々、塞^ 囡仃電解銅電鍍來確 、盖 古,、、、、路邓之溝邛的包埋性。在此時確認所使周的 為了確認電鍍^人性度巷之圓同狀凹部。然後, X乏山口 14,故對該溝部的剖面形狀進行_ 擴大後觀=觀=ί:ίΓ10倍的放大透鏡(lupe) 於、裔♦據」界岔合狀態等則使用光學金屬顯微 ίϊ二觀察之;從微觀面來看係使用掃描型電子顯 掀鏡,大1j0 00〜50 000倍後再觀察之。 电于頌 未施;ίΐΐΐ係t表1所示,表1中之試料編號④及⑤係為 、、客f / W知订電解前之光澤劑吸附處理者。此處之光 〜2^二:處理係藉由將經過水洗潔淨化之晶圓含浸於雙 秒鐘ί i ^基)二硫化物之濃度為〇·0 05克/升的溶液中1 〇 士,接著,施行電解銅電鍍處理。就此時的銅電鍍液而 a ,係使用硫酸銅系電鍍液。具體的溶液組成以及電鍍條
527446 五、發明說明(7) 件係如以下所示。 A · 電鐘液組成 •硫酸銅電鍍液組成 銅濃度 28克/升 硫酸濃度 200克/升 氯離子濃度50毫克/升 •添加劑 B.電鍍條件 溶液溫度 電流密度 電解時間 陽極材質 (不溶性陽極
(Microfab銅2100 ) 添加量如表中所述 2 0 °C 1· OA/dm2 4· 5分 含填銅(溶解性陽極)或翻/鈦 【表1】 試科编號 電鍍之處理條件 析出銅電鍍之品質評价結果 有無經光 澤划處理 中之添加Si量 電链層外提 (目视) 溝包坦性 電趟密合性 ① 有 Om 1/1 有光澤 良好 良好 ② 10m 1/1 ③ 10m 1/1 ④ 無 10m 1/1 有光澤 良好 良好 ⑤ Om 1/1 無光澤 不良 不良 527446 五、發明說明(8) "-- 注1 .試料編號②之電解銅電鍍浴中的添加劑係為僅 添加2克/升的聚乙烯乙二醇之聚合物成份。 >主2 ·試料編號③之電解銅電鍍浴中的添加劑係由聚 合物成份之2克/升的聚乙烯乙二醇以及平坦劑成份之〇〇5 克/升的丙烯醯胺所構成。 •注3·試料編號④之電解銅電鍍浴中的添加劑係使甩 含有聚合物成份、平坦劑成份以及光澤劑成份之Micr〇fab 銅2100 。 在該表1中,試料編號④係將利甩習知方法進行電解 銅電鍍之正常品拿來作評價,以當作本發明之試料編號 ①〜③的比較對象。而試料編號⑤則係用來證明在電鍍液 中完全不加入習知添加劑且亦不進行電鍍前之光澤劑吸附 處理的情況下即無法施行良好的包埋電鍍。又,在表i的、 试料編號①〜⑤中係使用含磷銅之溶解性陽極,而在表2'中 所示的試料編號①,及試料編號④,則係使用鉑/鈦之 〉谷性陽極。 結果,本發明之試料編號①〜③可製造出與代表了習 知正常品之試料編號④在品質上皆相同而無任何問題且白具 有良好的溝包埋性及優異的電鍍密合性之製品。由此可/、 知’若有進行電鍍前之光澤劑吸附處理的話,則無論在電 解銅電鍍液中有無加入添加劑,皆可得到良好的包埋雷聲 狀態。試料編號⑤之情況則如起初所預測般,不但電=: 電鍍之外觀看來差異很大,也得不到令人滿意的優異溝包 埋性。
527446 五、發明酬⑼ '— 接著’為了更進一步調查電解銅電鍍液之壽命,故將 表1中所示的試料編號④以及試料編號①〜③等之電鍍液的 溶液安定性拿來做比較。其步驟係為在使銅電鍍液中不含 有添加劑且亦不於中途補充該添加劑的情形下,藉著連浐 =電電解來做運轉測試。結果如表2所示。而試料編號 與試料編號①及試料編號④,與試料編號④除了陽極 τ貝改變之外,在電解條件等其他條件上皆相同。 4峨丨電銀品質 ①—棄錢外敗 mm 表2】 L25 hr/1) I 1 00 I 2 00~ 有光澤 .良 好 有光澤 良 好 _有光澤 ^_色 有先澤 Γ€Γ
W 電錢外說有光澤 有光澤 良好 良好 良 ¥ 不
WW 不良 無光澤 1表2的結果可得知,試料編㈣之電鑛 ㊁::劑r使用一段時間後,電錢外觀以及電鍍的密合性 # ^.相對於此,鉍仃本發明方法之試料編號①〜③复 低=電;液在使"時間後皆未劣化,故使得造成降 住能之主要原因不會形成。因Λ,電解銅電鍵液的 527446
壽命可長時間維掊,0 ^ & π~ & 更逸一牛,# T確保、/谷液女疋性變成非常安定。 乂 ’右針對使用麵/鈇之不溶梓 而就表2中的試料編辨m, R 々从 ^•除極日寸的特徵 编赛αν沾二 ①及④之結果比較來看’試料 編號①的溶液安定性可今非赍俱里+ u 武枓 號④,之溶液的劣化情彡 I ^…目較於此,試料編 J力1匕rt形就較急遽。因此,益山d m t 發明之電鍍方法,可解決 错由抓用本 點,同時也不备在:Π因使用不洛性陽極所產生的缺 劑之陽極分解i不2性陽極時於電鍍液中發生添加 组1解且不需進行繁雜的陽極維護工作。 精由使用本發明之電解 延長電錢液壽命之工γ Μ 'χ ',可大幅降低用來 的管理牛嗯.^ 轉費用,並可省去電鍍液繁雜 二:=以;;:造::的目,,同:也 =銅二可達二=== 上,以有效降低製品^不u鑛方法應用於更微細的電路
Claims (1)
- 告本、申請專利範圍 527446 圓的1銅:銅:包埋方係在多層印刷線路板或晶 包埋析出銅之,丨層孔或溝部等凹部藉由電解鋼電鍍以 自由ΐ If ,用含有總濃度在G ·G G卜1G克/升範圍内之擇 、0石只基丙基)二硫化物或其2鈉鹽、譬Γ 9 丙=硫化物或其2納鹽、雙(3—確基二:丙^ 納鹽、、雙績基丙基)二硫化物或其吻: _ *、’、土本基)一硫化物或其2鈉鹽、3 -(苯並噻唑篡 基丄2基石黃酸或其鈉鹽、Ν,Ν一二甲基-二硫代氨^ - 1 : 土丙基)一酯或其鈉鹽、0-乙基-二碳酸乙酯 所组成H广丙基)—酯或其鉀鹽、硫代尿素以及其衍生物 來作為銅以上物f之光澤劑成份的水溶液 物上,之ί鍍液添劑5並使該光澤劑預先吸附於被鍍 _ ψ # 61再於不含光澤劑成份的銅電鍍浴中藉由電解將 析出銅包埋於上述凹部。 身/ 2 m種析出銅之包埋方法,係於含有濃度在0·001〜10 〇· 001二u内之Ϊ澤劑成份的水溶液中添加含有濃度在 声在0 ilfn j升靶圍内之平坦劑成份的水溶液以及含有濃 ίj i /升範圍内之聚合物成份的水溶液以調整 物上1伤’亚使該調整後的光澤劑成份預先吸附於被鍍 挤Ψ加=後再於不含光澤劑成份的銅電鍍浴中藉由電解將 析出銅包埋於上述凹部; , 其中: 上述光澤劑成份擇自由雙(3 _磺基丙基)二硫化物或第14頁 527446其2納鹽、雙(2 —磺基丙基)二硫化物或其2納鹽、雙(3 一 磺基-2 -羥丙基)二硫化物或其2鈉鹽、雙(4—磺基丙基) 二硫化物或其2鈉鹽、雙(對磺基苯基)二硫化物1或其^納 鹽、3-(苯並噻唑基-2 -硫代基)丙基續酸或其鈉鹽、 N,N-二曱基—二硫代氨基甲酸—(3一磺基丙基)—酯或其鈉 鹽、0-乙基-二碳酸乙酯-S- (3-磺基丙基)—酯或其鉀 鹽、硫代尿素以及其衍生物所組成之族群中1種或2種以上 物質; 〜 上述平坦劑成份係擇自由乙醯胺、丙醯胺、苯隨迭 虱、丙烯醯胺、甲基丙烯醯胺、二甲基丙烯醯胺、n, ^ ^ 一乙基曱基丙烯醯胺、N,N-二乙基丙烯酸胺、n,n -二甲 基甲基丙烯醯胺、N-(羥甲基)丙烯醯胺、聚丙烯酸醯 · 胺、來丙烯酸醯胺加水合分解物、硫代黃素以及藏紅所組 成之族群中1種或2種以上物質;以及 上述聚合物成份係擇自由聚乙烯醇、綾基、曱基纖維 素、聚乙烯乙二醇、聚丙烯乙二醇、硬脂酸—聚乙烯乙二 ‘ 醇酯、硬脂醯醇-聚乙烯乙二醇酯、壬基苯酚—聚乙烯乙二 . 醇S旨、辛基苯酚-聚乙烯乙二醇酯、聚乙烯〜丙烯乙二醇以 及召-奈酚-聚乙烯乙二醇酯所組成之族群中1種或2種以上 物質。 _ 3 · 一種析出銅之包埋方法,其特徵在於: 在如申請專利範圍第1項或第2項所述之介層孔及溝部 的包埋方法中,係於銅電鍍浴之液溫為1 〇〜6 〇它以及電流 密度為0· 1〜l〇A/dm2的條件下施行電解以將析出銅包埋於第15頁 527446 六、申請專利範圍 上述凹部。11SII 第16頁
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11019795A JP3124523B2 (ja) | 1999-01-28 | 1999-01-28 | 銅メッキ方法 |
EP00303672A EP1152071B1 (en) | 1999-01-28 | 2000-05-02 | Copper plating method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW527446B true TW527446B (en) | 2003-04-11 |
Family
ID=37685107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089107822A TW527446B (en) | 1999-01-28 | 2000-04-26 | Copper plating method |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1152071B1 (zh) |
JP (1) | JP3124523B2 (zh) |
DE (1) | DE60022480T2 (zh) |
TW (1) | TW527446B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114411214A (zh) * | 2022-01-27 | 2022-04-29 | 四会富仕电子科技股份有限公司 | 一种铜基板电镀铜的方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3498306B2 (ja) * | 1999-09-16 | 2004-02-16 | 石原薬品株式会社 | ボイドフリー銅メッキ方法 |
JP3594894B2 (ja) | 2000-02-01 | 2004-12-02 | 新光電気工業株式会社 | ビアフィリングめっき方法 |
JP2001316866A (ja) * | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | 半導体装置の製造方法および製造装置 |
JP4762423B2 (ja) * | 2001-03-05 | 2011-08-31 | 石原薬品株式会社 | ボイドフリー銅メッキ方法 |
US6863795B2 (en) * | 2001-03-23 | 2005-03-08 | Interuniversitair Microelektronica Centrum (Imec) | Multi-step method for metal deposition |
US6784104B2 (en) * | 2001-07-27 | 2004-08-31 | Texas Instruments Incorporated | Method for improved cu electroplating in integrated circuit fabrication |
JP2003041393A (ja) * | 2001-07-30 | 2003-02-13 | Atotech Japan Kk | 銅メッキ方法 |
JP2005036285A (ja) | 2003-07-15 | 2005-02-10 | Tokyo Electron Ltd | 無電解メッキ用前処理液及び無電解メッキ方法 |
US7282602B2 (en) * | 2004-09-21 | 2007-10-16 | Bionumerik Pharmaceuticals, Inc. | Medicinal disulfide salts |
JP4862508B2 (ja) * | 2006-06-12 | 2012-01-25 | 日立電線株式会社 | 導体パターン形成方法 |
JP5864161B2 (ja) * | 2011-08-23 | 2016-02-17 | 石原ケミカル株式会社 | 銅フィリング方法及び当該方法を適用した電子部品の製造方法 |
US9598787B2 (en) | 2013-03-14 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
US20140262801A1 (en) * | 2013-03-14 | 2014-09-18 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
US10512174B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
US10508357B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
JP7215211B2 (ja) * | 2019-02-21 | 2023-01-31 | 住友金属鉱山株式会社 | 銅張積層板の製造方法 |
KR20210062369A (ko) * | 2019-11-21 | 2021-05-31 | 에스케이넥실리스 주식회사 | 찢김 또는 주름 불량을 방지할 수 있는 전해동박, 그것을 포함하는 전극, 그것을 포함하는 이차전지, 및 그것의 제조방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE962489C (de) * | 1954-02-10 | 1957-04-25 | Dehydag Gmbh | Sparbeizmittel zum Schutze von Metallen bei der Behandlung mit sauren Mitteln |
KR100665745B1 (ko) * | 1999-01-26 | 2007-01-09 | 가부시키가이샤 에바라 세이사꾸쇼 | 구리도금방법 및 그 장치 |
-
1999
- 1999-01-28 JP JP11019795A patent/JP3124523B2/ja not_active Expired - Lifetime
-
2000
- 2000-04-26 TW TW089107822A patent/TW527446B/zh not_active IP Right Cessation
- 2000-05-02 DE DE60022480T patent/DE60022480T2/de not_active Expired - Lifetime
- 2000-05-02 EP EP00303672A patent/EP1152071B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114411214A (zh) * | 2022-01-27 | 2022-04-29 | 四会富仕电子科技股份有限公司 | 一种铜基板电镀铜的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP3124523B2 (ja) | 2001-01-15 |
EP1152071A1 (en) | 2001-11-07 |
JP2000219994A (ja) | 2000-08-08 |
EP1152071B1 (en) | 2005-09-07 |
DE60022480D1 (de) | 2005-10-13 |
DE60022480T2 (de) | 2006-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW527446B (en) | Copper plating method | |
CN1749442B (zh) | 改进的电镀方法 | |
CN101435094B (zh) | 镀铜浴的配方 | |
KR100618722B1 (ko) | 전착화학 | |
CN101405436B (zh) | 电解镀铜的方法 | |
TWI414638B (zh) | A method for manufacturing a surface-treated electrolytic copper foil, and a circuit board | |
TWI326721B (en) | Plating method | |
JP6496755B2 (ja) | 低内部応力銅電気めっき方法 | |
CN112543822B (zh) | 电解铜箔的制造方法 | |
JP2004204351A (ja) | 逆パルスめっき組成物および逆パルスメッキ方法 | |
JP5301886B2 (ja) | 電解銅箔及びその電解銅箔の製造方法 | |
KR20080017276A (ko) | 경질금 합금 도금 배스 | |
JP4709575B2 (ja) | 銅箔の粗面化処理方法及び粗面化処理液 | |
JPS59596B2 (ja) | 酸性銅メツキ浴 | |
JP2004176171A (ja) | 非シアン電解金めっき液 | |
CN105705491A (zh) | 作为调平剂的含有苯并咪唑部分的聚合物 | |
TW200303376A (en) | Process for electrolytic copper plating | |
TWI261075B (en) | Pulse reverse electrolysis of acidic copper electroplating solutions | |
JP3361914B2 (ja) | 印刷回路用銅箔の製造方法 | |
CN1934292A (zh) | 镀锡电解液组合物和表面镀锡方法 | |
CN100347338C (zh) | 用于银沉积的酸性溶液及在金属表面上沉积银层的方法 | |
JP2009149978A (ja) | 銅−亜鉛合金電気めっき浴およびこれを用いためっき方法 | |
KR20220107756A (ko) | 평탄제 및 광택제 기능을 동시에 갖는 유기 첨가제를 사용한 전해 구리 도금 약품 | |
JP6421232B1 (ja) | 電気銅亜鉛合金めっき膜の形成方法 | |
KR100711426B1 (ko) | 인쇄회로기판 스루홀 도금용 산성 동전해 용액의 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |