TW514966B - Mounting method for plate bonding object having electrode - Google Patents

Mounting method for plate bonding object having electrode Download PDF

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Publication number
TW514966B
TW514966B TW090118978A TW90118978A TW514966B TW 514966 B TW514966 B TW 514966B TW 090118978 A TW090118978 A TW 090118978A TW 90118978 A TW90118978 A TW 90118978A TW 514966 B TW514966 B TW 514966B
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TW
Taiwan
Prior art keywords
electrode
paste
bonding
application
item
Prior art date
Application number
TW090118978A
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English (en)
Inventor
Akira Yamauchi
Original Assignee
Toray Eng Co Ltd
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Publication of TW514966B publication Critical patent/TW514966B/zh

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    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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514966 五、發明說明(1) 【技術領域】 本發明為關 方法。 【技術背景】 互相接合具 被形成有凸塊 法已為人所知 在洗淨後立刻 封性,同時, 化,在接合前 但是,如上 止一次氧化後 長時,被接合 又’在加熱 一次氧化,但 殘渣,而有使 【發明之開示 因而,本發 之電極的一次 合,可有效率 為了達成上 在接合具備有 量粒子照射至 持特殊氣體環 於接合具備有電極的被接合物彼此間之安裝 備有電 之晶片 。代表 塗佈非 為了接 塗佈炫 述之習 ,假如 物的電 接合前 是假如 其工程 極的被接 及基板, 的方法為 導電性糊 合的確實 劑(f 1 u X ) 知方法, 至塗佈非 極,例如 藉由塗佈 塗佈熔劑 成為複雜 合物彼 而以例 在接合 劑以確 性或防 之方法 對被接 導電性 ,銲錫 熔劑雖 ,接合 的問題 此之間 如加敎 ”、、 前電極 保接合 止接合 已為人 合物的 糊劑或 凸塊可 然可以 後必須 ,例如 接合之 事先被 後接合 時電極 所知。 電極洗 溶劑的 能會氧 防止某 要除去 ’電極 安裝方 洗淨, 部的密 的氧 淨以防 時間太 化。 程度的 熔劑的 明的目的為提供,可以有效果 氧化及一次乳化’而且,以少 以簡單化工程之安裝方法。 述目的,關於本發明的安裝方 電極的被接合物彼此間時,藉 少一邊的被接合物之電極洗淨 土兄下塗佈非導電性糊劑,使非 防止被接合物 量熔劑即可接 法,其特徵為 由能量波或能 後,一面在保 導電性糊劑面
^3l2\2d-c〇de\90-l0\90118978.ptd 第4頁 514966 __g號 90118978 — 一 年 月 曰 修正 91。ί〇· - 7 五、發明說明(2) 在其間對另一邊的被接合物以無熔劑(f luxless)接合而構 成。在此處的特殊氣體環境為指,不活性環境或是不會和 被接合物的黾極反應之氣體環境(例如:氮氣體環垮), 或是,藉由氧化物的還厚、,置換反應等而除去氧=氣 體環境。 上述安裝方法中,雖然也 佈在同一位置實施,但是為 施,洗淨在洗淨室内較佳, 佈室内塗佈為佳。 可使洗淨和非導電性糊劑的塗 了各自能在最適合的環境下實 塗佈則在和被洗淨室連結的塗 能量 子圑束 觀點而 對另 射而洗 是,假 上由於 量波或 的被接 洗淨後 間作接 非導電 予鍛金 非導 塗佈厚 波或能 及雷射 言,使 一邊的 淨,進 如事先 不會發 能量粒 合物實 的非導 合’僅 性糊劑 ’對兩 電性糊 度對所 Μ 等’特別由 用電漿為佳 被接合物電 一步在洗淨 在另一邊的 生表面氣化 子之洗淨及 施即可。# 電性糊劑施 對一邊的被 的塗佈,在 被接合物的 劑的塗佈方 定範圍可i句 使用電漿、離子束、原子束、原 洗淨效果及裝置構成的簡單化之 極雖也 後實施 被接合 的問題 非導電 即,在 予塗佈 接合物 另一邊 電極彼 法雖並 句塗佈 可以能 非導電 物之電,所以 性糊劑 本發明 的兩被 之電極 的被接 此間作 未特別 之觀點 量波或 性糊劑 極施行 關於本 之塗佈 中,也 接合物 作上述 合物之 接合。 限定, 而言 , 能量粒子照 之塗佈,但 鍛,實質 發明的以能 ,使對一邊 可以對上述 之電極彼此 洗淨、施予 電極事先施 但以均勻的 以藉由印刷 丨1邏_膽 90118978.ptc
第5頁 514966 五 發明說明(3) 二施較佳。印刷方法可以適用例如 〜^ ^3丨3〇15號等所被揭示的網版印刷本專β利特開平 ;该公報被揭示之方法)。特 (但是,並不限定 壓環境中印刷,即所謂真空印刷=特殊氣體環境下於減 )的凹凸底部殘留著空氣而成為★隙可防止在電極(凸塊 電性糊劑的塗佈殘留有附著被接1 =二此一印刷,以非導 破露出來殘留的識別標記可被供i j識別標記部為佳。 成晶片時)或晶圓彼此間的接::f切日寺(例如:切斷 被塗佈的非導電性糊劑為由電極::::5對準之用。 :生樹脂所構成’在塗佈後於接;:::::之非導電 非導電性糊劑中,也可以使用 :乂狁封。又,在此 千在被接a物的電極彼此間接 岭電 以提高電氣接合之信賴性。 $ "存於電極間而可 對乂本? B;=裝方法為對比較大的被接合⑯,例如, 對日日圓以上述旎置波或能量赵早 ..^ 體環境下塗佈非導電性糊劑,將祐f後的特殊氣 晶圓裁斷而形成複數個晶;V 糊劑的 人、, a寻使該晶片對另一邊的被接 :,例如,對基板作接合亦可。/亦艮p,使被塗佈非導電 ,糊劑的被接合物’在非導電性糊劑至少被半硬化後,裁 為小被接合物’使該小被接合物對非導電性糊劑面其間 對另一邊的被接合物以無熔劑接合之方法。 又,在本發明所稱的「電極」是包含和被接合物的表面 相同位準或比在其表面高若干位置而被形成平坦狀之電
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第6頁 五、發明說明(4) --- 極’及,在該平坦的電極卜 f 成隆起般的凸狀,被稱為戶4 =合t的表面上’被形 也包含電極彼此間的接合、:::的形悲之概念。因而工 坦電極的接合之概念。又乂接合、凸塊和: 器等的加熱接合,但不限定。方:代表例有可適用加熱 超音波接合。 疋於此,也可適用使用超音波之 如上述關於本發明的安梦 量粒子洗淨後,由於一中’將電極以能量波或能 佈非導電性糊劑,因此被it特殊氣體環境下而〆面塗 可成為原樣地以非導電性糊止一次氧化狀態的電極 ::由洗淨至塗佈糊劑為止之間可有效率地η:氧 接i;b狀於被接合物彼此間被接合(例如,加熱 不:有機合接:ί二ί導電性糊劑被覆的電極至接合為止 2氣、,所以二次氧化也可被防 面,不僅可防止^匕^^後以非導電性糊劑被覆電極表 "氧二::屬:後的接合工 應物的附著(例如,C0等之 3 ^的異物或反 蛀人,竑山—h 叹考)。因而以無熔劑即可作 連;之:ϊ:、ΐ劑而可大幅度簡單化至接合完成為止的- 劑,而且、於不=程已經被塗佈有非導電性糊 ;“ L f 要熔劑工程、殘渣除去的工程,所以 可大幅度鈿短一連串之工程所須要 (tact time)。又,盆可以π n士士, 了「』叫难组間歇日守間 又其叮以冋時有效率地防止被接合物的 \\312\2d-code\90-10\90118978.ptd 五、發明說明(5) 電極之一次氧化 止異物等附著, 又,洗淨後其 的一次氧化,所 果,例如,可在 一連串生產工程 又,塗佈非導 導電性糊劑,至 如將該被接合物 以容易製作可防 此小被接合物和 (例如,基板) 可一面防止一次 態,而以被簡化 【發明之最佳實 以下一面參照 圖1及圖3為表 裝方法的安裝裝 一邊的被接合物 的被接合物為由 極2和基板3的電 被接合的被接合 特別之限定。 所Π匕’而且’由於可以有效率地防 可以確保接合品的卓越品質。 =佈非導電性糊劑,由於可被防止電極 =必考慮至接合工程為止的時間。結 =非的㈣T儲存,而對應 的須要而作為緩衝物。 〒陘糊劑’例如,藉由印刷而均勻塗佈非 二使被塗佈的非導電性糊劑半硬化後,假 裁斷為小被接合物(例士口,晶片),即可 f =次氧化狀態的所希望之小被接合物。 W述同樣以無熔劑對另一邊的被接合物 二作可防止二次氧化狀態之接合。如此, 氧化、二次氧化,一面因應被接合物的形 的一連串工程作有效率的接合。 施形態】 圖面一面說明本發明之最佳實施形態。 示關於為了實施本發明的一實施態樣之安 置。在本實施形態中,如圖3、圖4所示, 為由具備有電極2之晶片1所構成,另一邊 具備有電極4之基板3所構成,晶片1的電 極4為以加熱接合所成。但是,此些互相 物之形態只要適合本發明之目的,並未作 在本實施形態中,各晶片1為藉晶圓作裁斷而所形成。
\\312\2d-code\90-10\90118978.ptd 第8頁 514966 五、發明說明(6) 如圖1所示,具備有所定大小 室6内’藉由洗淨手段7的能量波或能皮導入洗淨 =二”使用電漿。發生電聚的 :在本 可以為大氣壓,也可以為減壓環境 電極2不會反應的氣體等之特殊氣體環 ?二體或和 原、替換等而除去氧化物的氣體環境等。1 ^ 室9電極在2、=爭的/圓5被搬運至連結到洗淨室 至 在冼孑至6、塗佈室9之間被設有可密封 Γ二,Γ6、塗佈室9各自可以保持^ 段之二替;=對Π二作特,,氣體置,手 成為所定的不活性氣體環境(士 塗佈室9内 %署門門1 η π ^乱脱%扰(例如·氬氣體環境)。藉由 口又3 ]10,可貫施例如日本專利特開平u-233 充。以特殊氣體置換手段置換氣』t不 :: 孔::也可j使用和電極不會反應的氣體(例 ::是’可還原電極表面的氧化物之還原性氣 體,或疋,可替換之替換性氣體等。 在塗佈至9内,被洗淨的晶圓5之電極面,被塗佈以由塗 佈手段1—2所吐*之非導電性糊劑13。塗佈&,例如可藉由 印刷而貝轭,在本實施鉍樣中為使用網版丨4及擠壓板 (SqueeZe)15之網版印刷。在此時,如前述,適用真空印 刷%,可防止混入空隙。藉由此種印刷而塗佈,非導電性 糊劑1 3具有均勻的厚度,對所定的塗佈範圍全域可均勻地
υ 丄 j I η / 年月曰_^正 βΐι Id -案號9逛18978 五、發明說明(7) 塗佈。此時,在Β圓Ρ; 在後述接合時的Κ5對的/圍部被附著識別標記時,為了 導電性糊劑13。 $準,不可在該識別標記部份塗佈非 精由以能量波或能旦 環境下被塗佈非導帝:α的曰曰圓5以原樣狀態之特殊氣體 在此狀態下ΓΛ原…防止… 甦糊劑13在被半硬化Β± Μ』13至)亦王半硬化。非導電 ,被供原樣地接人日^,/曰丄圓5成為可被切斷之狀態。晶 晶圓5而想要形L;;的,::化後被送至接合工程,自 切。在本實施介&由々小尺寸之晶片時,則將晶圓5截 5被切斷成如圖;;:之=電性糊劑13半硬化後,晶圓 ,L 、口 Z所不之小尺寸的各種晶片1。 1 6内。::又:::之晶片1 ’被搬運至如圖3所示的接合室 内。在本實施自^二1、相接合的基板3也被導人接合室16 雖缺也有對^ ί'Γ為事先在基板3的電極4上實施鍍金, 情;:ii;?:4實施以電讓除去沾染物(污染了的 沾污物為指附發生表面氧化之問題。在此 的不純物。在基板電極寺上的有機物、氧化物或其他 晶片1為在被反轉之狀態下被工具 其刼q % 保持在載置台18上 戶斤保持,基板3為被 向(水平方向)調整位i Γ二lx’=mvY方 )和旋轉方向"方向在χ、γ方向(水平方向 乃门)5周正位置。工具17在Ζ方向(上 90118978. ptc 第10頁 案號 9011897R 五、發明說明(8) 曰 修正 10·
2向)調整位置,$可以在z方向(上下方向)和旋轉’: w 0方向)凋整。在本發明中,此些位置調整的方法· 亚未特別限定。又,檢測出上下被接合物的位置偏移量,. 為了可依據位置偏移量而可調整至所希望 圍内,在載置台!8和工具17之間,被設有可讀出上下;;妾巳 合物上附者的識別標記之可進退的識別手段1 9。識別手柃 j可,,例如:CCD攝影機、紅外線攝影機、X線攝影機广 感測器等不管種類或大小,只要是可以識別標記之手段, 任何手段均可以。此一識別手段1 9也在X、γ方向(依情 況,更可在Z方向(上下方向))可以調整位置。又/此 二-識別手段可各自各別讀出上下被接合物所附著之識別標« δ己’、也可以為其他構成的識別手段。關於對準位置,可以 在載置台㈣、卫具側的任—側實施均可,也可以在兩邊實 人:置:皮:f後,曰曰曰片1及基板3被加熱接合。在此加埶; 。中,如圖4所不,藉非導電性糊劑丨3被防止氧化 之電極2 (例如:由銲錫凸塊構成之電極),及,=—
皮::有氧化之虞之基板3的電極4,在非導電性: 13中=合’特別是由於晶片!的電極2在非導電 _ 中被加熱,所以此加熱也可有效果防止二次氧化。又,— 半硬化為B級的糊劑樹脂,由於在加熱時,一曰读又」? 後才被硬化,因此在黏度降低時構成電極2的5 = f Z低 j,而可以實施良好的焊接,而且,在處理時不會曰有;章
:)丄4夕00 五、發明說明(9) 由於在同 加熱接合, 熔劑(flux) 無溶劑,所 程,而可大 (tact time 其一面被 1及基板3的 合後的品質 又,在洗 間,由於藉 化之虞,所 產的緩衝物 於可以使晶 有比較大的 性糊劑1 3, 熱接合,可 又,本發 合部,其他 接合部,以 中的電極為 氣配線的假 小,和基板 體晶片、光 日可可防止一次氧化、二次氧化之狀態下而實施 所以在此接合時,基本上不須要習知所使用之 。亦即,可以無熔劑(f luxless)接合。由於是 Μ不須要熔劑塗佈工程或熔劑的殘渣除去工 幅度簡化一連串的工程,而縮短間歇時間 )° 防止一次氧化、二次氧化,而一面被實施晶片 所疋接合,雖然是簡單的一連串工程旦 非常卓越。 一接 淨、塗佈非導性糊劑後,至接合工程為止之 由以非導電性糊劑1 3而密封,電極2不會有氧 以也可原樣地放置,對應必要,也可被作為生 。又,至接合為止之間,如上述對應必 圓5切斷為小尺寸的晶卜所以可以一面對且由 面積之晶圓5有效率地實施洗淨、塗佈非導電 以:t接ί ί程實施所定的晶片1和基板3的加 以如间一連串的工程全體之效率。 明中的接合部為句冬v、s Μ r. ,, / d丨為U 3以通常的鉛/錫焊接之接 以錫/銀、B i / T n望 八/雜人 / η 4的所明被稱為代用焊料之 金/錫、金/今的垃人# 沪π僅帶t "的接3邛之概念。又,本發明 二m配線的電極,也包含未連接電 的渰接人彳丨电明中的晶片為指不管種類或大 的:接:::全部之物’例如:ic晶片、半導 牛面女裝零件、晶圓等。又,基板為指
\\312\2d-code\90-10\90118978.ptd 第12頁 514966 五、發明說明(ίο) 不管種類或大小,和晶片的被接合侧之全部之物,例如: 樹脂基板、玻璃基板、薄膜基板、晶片、晶圓等。又,本 發明不僅對銲錫凸塊,對一次氧化或是二次氧化反應之所 有電極均極有效。 【產業上之利用可能性】 本發明的安裝方法可以適用接合具備有電極的被接合物 彼此間之所有的安裝,藉由適用本發明,可簡化一連串的 工程,同時,可以提高接合物的品質。 【元件編號之說明】 1 晶片 2 ^ 4 電極 3 基板 5 晶圓 6 洗淨室 7 洗淨手段 8 能量粒子 9 塗佈室 10 閘門 11 替換手段 12 塗佈手段 13 非導電性糊劑 14 網版 15 擠壓板 16 接合室
\\312\2d-code\90-10\90118978.ptd 第13頁 514966 五、發明說明(11) 17 工具 18 載置台
H1H 第14頁 \\312\2d-code\90-10\90118978.ptd 514966 圖式簡單說明 圖1為關於本發明的一實施態樣之安裝方法所使用安裝 裝置的部份概略構成圖。 圖2為在圖1中,切斷塗佈非導電性糊劑的晶圓而製作晶 片之概略側視圖。 圖3為安裝裝置的接合裝置部之概略構成圖。 圖4表示被接合物彼此間的接合狀態之概略剖面圖。
C:\2D-CODE\90-10\90118978.ptd 第15頁

Claims (1)

  1. ____ 六、申請專利範圍 1 ·—種接合 為丄在接合具 能量波或能量 後’一面 電性糊劑,使 以無熔劑接合 2 ·如申請專 内逢复敗复tL JL_述塗你作業 MJM78 備有電 粒子照 保持鸯 非導電 a 修正 9ϊ· Ϊ0· 3 4- 7 差接合物t安裝方法,其特徵 極之被接合物彼此之間時,藉由 射^A···淨至少一邊的被接合物之電極 特殊氣體環境下亟一面塗佈非導 性糊劑面在其間對另一邊的被接合物 第1項之安裝方法,其中, ’攻在和洗淨室連結的塗佈室内實施 在洗淨室 3 ·如 作為能 4.如 的被接 5 ·如 而實施 6.如 印刷而 7 ·如 糊劑的 部。 8 ·如 劑為使 9 ·如 導電性 申請專 量波或 中請專 合物之 申請專 前述塗 申請專 實施前 申請專 塗佈之 申請專 用含有 申請專 糊劑之 利範圍 能量粒 利範圍 電極上 利範圍 佈生差 利範圍 述印刷 利範第 實施殘 利範第 導電粒 利範第 被接合 第1項之安裝方法,其中, 子。 第1項之安裝方法,其中,在另一面 施行Ur作業〇 第1項之安裝方法,其中,藉由印刷 〇 第5項之安裝^^,其中,藉由直空ilA 〇 ,、 1項之安裝方法,其中,使非導電性 遠下跑被接合物上的識別標記 1項之安裝立一渔,其中,非導電性糊 子之糊劑。 使用電漿 1項之安裝,其中,對e塗佈非 物’於非導電性糊劑至少半硬化後,
    90]18978.ptc 第16頁 514966 案號 90118978 年 月 曰 修正 六、申請專利範圍 切斷為小被接合物,使非導電性糊劑面在其間對另一邊的 被接合物以無熔劑接合。
    90118978.ptc 第17頁
TW090118978A 2000-08-04 2001-08-03 Mounting method for plate bonding object having electrode TW514966B (en)

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Publication number Priority date Publication date Assignee Title
JP2002064268A (ja) * 2000-08-18 2002-02-28 Toray Eng Co Ltd 実装方法および装置
JP2003275895A (ja) * 2002-03-22 2003-09-30 Toyo Aluminium Kk ろう付け用ペースト状組成物とそれを用いたろう付け方法
JP4233802B2 (ja) 2002-04-26 2009-03-04 東レエンジニアリング株式会社 実装方法および実装装置
WO2004030078A1 (ja) * 2002-09-26 2004-04-08 Toray Engineering Co., Ltd. 接合装置
US6885108B2 (en) * 2003-03-18 2005-04-26 Micron Technology, Inc. Protective layers formed on semiconductor device components so as to reduce or eliminate the occurrence of delamination thereof and cracking therein
JP4639245B2 (ja) * 2008-05-22 2011-02-23 パナソニック株式会社 半導体素子とそれを用いた半導体装置
JP2010263200A (ja) * 2009-04-09 2010-11-18 Furukawa Electric Co Ltd:The 半導体装置の製造方法およびこの方法に用いる圧力容器
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder

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JP2786700B2 (ja) * 1989-11-29 1998-08-13 株式会社日立製作所 半導体集積回路装置の製造方法および製造装置
US5090609A (en) 1989-04-28 1992-02-25 Hitachi, Ltd. Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
US5878943A (en) * 1990-02-19 1999-03-09 Hitachi, Ltd. Method of fabricating an electronic circuit device and apparatus for performing the method
JP3207506B2 (ja) * 1991-08-28 2001-09-10 株式会社日立製作所 電子回路装置の製造方法
JP3215008B2 (ja) * 1995-04-21 2001-10-02 株式会社日立製作所 電子回路の製造方法
JP3120695B2 (ja) * 1995-05-19 2000-12-25 株式会社日立製作所 電子回路の製造方法
JPH1129748A (ja) * 1997-05-12 1999-02-02 Fujitsu Ltd 接着剤、接着方法及び実装基板の組み立て体
JP3420917B2 (ja) * 1997-09-08 2003-06-30 富士通株式会社 半導体装置
JP2000138260A (ja) * 1998-10-30 2000-05-16 Sony Corp 半導体装置の製造方法
JP2000138255A (ja) * 1998-10-29 2000-05-16 Nec Corp 半導体装置の製造方法と製造装置
JP2000133679A (ja) * 1998-10-29 2000-05-12 Matsushita Electric Ind Co Ltd バンプ付電子部品の実装方法および実装体
JP4000743B2 (ja) * 2000-03-13 2007-10-31 株式会社デンソー 電子部品の実装方法

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