JP5207404B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP5207404B2
JP5207404B2 JP2009295970A JP2009295970A JP5207404B2 JP 5207404 B2 JP5207404 B2 JP 5207404B2 JP 2009295970 A JP2009295970 A JP 2009295970A JP 2009295970 A JP2009295970 A JP 2009295970A JP 5207404 B2 JP5207404 B2 JP 5207404B2
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metal
electrode
oxide film
semiconductor device
minute
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JP2010171421A (ja
Inventor
豊群 郎
林　　祐輔
博 仲川
昌宏 青柳
弘通 大橋
浩 山口
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Description

本発明は、半導体チップ上にＡｌ電極を具備した半導体装置（半導体デバイス）及びその製造方法に関する。
電力制御やエネルギー変換等を行うパワーエレクトロニクス用のパワー素子として、たとえば図１に例示したように、半導体チップ１上にＴｉ／Ｗ等の接合金属３を介して”表面”電極としてのＡｌ電極４を作製したものが知られている。Ａｌ電極４に使われるＡｌ金属は、低電気抵抗、高性能、ＡｌとＡｕワイヤボンドが可能、及び低コストという優れた性能を有している。Ａｌ電極４の作製については、一般的に、真空中においてスパッタリング又は蒸着により、Ｓｉ、ＳｉＣ又はＧａＮ等の半導体ウェハにＴｉ／Ｗ、Ｃｒなどの接合・拡散バリヤ層を作製し、その上にスパッタリング又は蒸着方法によりＡｌ電極４を作製する（非特許文献１、２参照）。一方、スパッタリング又は蒸着により、チップの”裏面”つまりダイボンド面には、Ｎｉ／Ａｇ電極２が作製される。
Ａｌ金属４は酸素との親和力が非常に高いので、常温でも空気中に曝露されると、たとえば図２ａに例示したようにその表面に薄いＡｌ酸化皮膜５が自然的に生成する。このＡｌ酸化皮膜５は絶縁体であり、導電性がほぼない。そこで、たとえば図２ｂに例示したように、超音波又は熱圧接によりこのＡｌ酸化皮膜５を破り、Ａｌ又はＡｕワイヤ６をその下のＡｌ電極４（Ａｌ金属）と接合させて、導電性を得る。しかし、このＡｌ酸化皮膜５ははんだとの濡れ性が不良で、ワイヤボンディングは可能であっても、はんだ接合は不可能である（非特許文献３参照）。
そこで、従来、たとえば図３に例示したように、Ａｒ等を用いたスパッタリングによりＡｌ酸化皮膜５を除去し、半田付け性を持つＴｉＮ，ＮｉＣｒ等の金属を拡散バリヤ層７として蒸着する方法が採用されている。拡散バリヤ層７の上にはさらにＡｕ酸化防止層８が形成される。
また、たとえば図４に例示したように、亜鉛置換処理および無電解Ｎｉ（Ｐ）めっきによる方法も知られている。亜鉛置換処理では、Ａｌ酸化皮膜５がなくなり、Ａｌ電極４の表面に多くのＺｎ粒子９が析出する。無電解Ｎｉ（Ｐ）めっきでは、Ｎｉ（Ｐ）層が析出する。
しかしながら、これら従来の方法で処理したＡｌ電極４は直接はんだ付けできるが、Ａｌワイヤボンディングは困難である。そして、両方とも電極処理のプロセスが複雑になり、コストも上がる（非特許文献３−６参照）。
Randall Kirschman, "High-Temperature Electronics", IEEE Press, NY, 1999, pp.734,740. Jau-Jiun Chen, Soohhwan Jang, and F. Ren.et.al, "Comparison of Ti/Al/Pt/Au and Ti/Au/ Ohmic Contacts n-type ZnCdO", Appl. Phys.Lett. 88 012109 (2006). J. H. Lau,"Flip Chip Technologies", McGraw-Hill, NY, 1995, pp.226. John H. Lau, C. P. Wong, "Electronics Manufacturing with Lead-Free, Halogen-Free, and Conductive-Adhesive Materials", McGraw-Hill, NY, 2003, pp2.1-2.6. Haijing Lu, Cheah Li Kang, Stephen C K Wong and Hao Gong,"Evaluation of Commercial Electroless Nickel Chemical for a Low Cost Wafer Bumping Process", Semicond. Sci. Technol. 17 (2002) 911-917. 牧野 豊、渡辺 英二、児玉 邦夫、水越 正孝、山田 光孝、"無電解NiめっきUBM形成と実用性に関する検討"、第１０回マイクロエレクトロニクスシンポジウム（MES’98）Dec. 1998、埼玉県大宮市。
そこで、以上のとおりの事情に鑑み、本発明は、はんだ直接付けとワイヤボンディングとを両立できるアルミ電極を半導体チップ上に具備した半導体装置（半導体デバイス）を提供することを課題としている。
上記課題を解決すべく、本発明の半導体装置は、半導体チップに設けられたＡｌ電極上のＡｌ酸化皮膜に、該皮膜を貫通してＡｌ電極に届く微小金属を備えたことを特徴とする。
また、Ａｌ酸化皮膜に形成された貫通孔に微小金属が設けられていること、微小金属がＡｌ電極を貫通すること、微小金属が、Ａｌ電極を貫通し、さらに半導体チップとＡｌ電極との間に介在する接合金属を貫通すること、微小金属が、Ａｌ電極を貫通し、さらに半導体チップとＡｌ電極との間に介在する接合金属を貫通し、そして半導体チップを貫通すること、微小金属が、不動態皮膜生成し難く、かつはんだと濡れ性がある金属であること、微小金属が、Ａｕ、Ａｇ、Ｐｔ、Ｐｄ、またはＮｉであることなどを特徴とする。
また、本発明の半導体装置の製造方法は、半導体チップに設けられたＡｌ電極上のＡｌ酸化皮膜に、該皮膜を貫通してＡｌ電極に届く微小金属を形成することを特徴とする。
また、Ａｌ酸化皮膜に貫通孔を形成し、該貫通孔に微小金属を設けること、微小金属を含むＡｌ酸化皮膜の表面にはんだを塗布すること、Ａｌ酸化皮膜の貫通孔にワイヤ形状の金属を埋め込むことにより、微小金属を形成すると同時にワイヤボンディングを行うことなどを特徴とする。
従来の半導体装置の一例を示した図。 従来の半導体装置の一例を示した図。 従来のはんだ付けのための電極処理の一例について説明する図。 従来のはんだ付けのための電極処理の一例について説明する図。 本発明による半導体装置の一例を示した図。 本発明によるはんだ付けの一例について説明する図。 図６に続くはんだ付けの一例について説明する図。 微小金属の各種形態を示した図。 微小金属の作製方法の一例について説明する図。 図９に続く微小金属の作製方法の一例について説明する図。 図１０に続く微小金属の作製方法の一例について説明する図。 微小金属の作製方法の一例について説明する図。 Ａｌ電極へのワイヤボンディングの一例について説明する図。
以下、本発明の実施の形態について図面を参照して説明する。
図５は、本発明による一実施形態を示したものである。この実施形態では、Ａｌ電極４上に生成したＡｌ酸化皮膜５の適当な箇所に、該皮膜を貫通してＡｌ電極４まで届く微小金属１１を形成させており、この微小金属１１の存在により、後述するはんだ直接付け及びワイヤボンディングの両立が可能になる。すなわち、はんだ直接付け用のＡｌ電極４、ワイヤボンディング用のＡｌ電極４を別々に用意する必要がなく、酸化物貫通微小金属１１を具備した一種類のＡｌ電極４をはんだ直接付け及びワイヤボンディング両用とすることができる。
図６および図７は、上記微小金属１１の存在により可能となるはんだ直接付けについて説明する図である。微小金属１１が形成されたＡｌ電極４の表面全体にはんだ１２を塗布し、リフローすると、はんだ１２が微小金属１１と反応して（図中１３は微小金属原子）、さらにＡｌ電極４のＡｌとも反応する（図６参照）。はんだ１３とＡｌ原子１４との反応に伴い、Ａｌ酸化皮膜５が破壊されて、はんだ１３が徐々に周囲へ広がっていく（図７参照）。この広がり速度は、リフロー温度が高いほど、またはんだ量が多くほど、早くなる。これにより、Ａｌ電極４へのはんだ直接付けが実現し、たとえば半導体チップ１上に、セラミックス基板の表裏面に銅板が張り合わされたＤＢＣ基板１５を良好にはんだ接合することができるようになる。
微小金属１１については、図８に例示したように、様々な形状や貫通方法がある。たとえば、左枠内に例示したように、微小金属１１を、Ａｌ酸化皮膜５に設けられた貫通孔１６内にてＡｌ酸化皮膜５の表面と面一となるように埋める形態（上段図）、貫通孔１６内のある程度の高さまで埋め込む形態（中段図）、逆にＡｌ酸化皮膜５の表面から突出するように形成される形態（下段図）が考えられる。これらの形態では、微小金属１１の直径は貫通孔１６の直径と等しくなるように設けられる。
また、微小金属１１の高さがＡｌ酸化皮膜５の高さと等しい、あるいはそれより低い又は高い場合のいずれにおいても、同図右枠内に例示したように、貫通孔１６を覆う構造（上段図）、貫通孔１６の直径よりも小さな直径を持つ構造（下段図）も可能である。
また、微小金属１１の直径が貫通孔１６の直径より小さい又は等しい場合であっても、微小金属１１の高さがＡｌ酸化皮膜５の厚さと等しい、あるいは低い又は高い場合であっても、同図下枠内に例示したように、貫通孔１６をＡｌ酸化皮膜５からさらにＡｌ電極４をも貫通させる形状とさてもよい。たとえば、Ａｌ電極４の途中まで貫通させる形態（左端図）、Ａｌ電極４を全て貫通してその下の接合金属３まで届く形態（左中央図）、接合金属３をも貫通して半導体チップ１の表面まで届く形態（右中央図）、そしてさらに半導体チップ１をもある程度貫通する形態（右端図）などが考えられる。
なお、接合金属３については、Ｔｉ−Ｗの他に、Ｔｉ，Ｔｉ−Ｗ，Ｔｉ−Ｐｄ，Ｔｉ−Ｐｔ，Ｃｒ，Ｃｒ−Ｃｕ，Ｃｒ−Ｃｕ−Ａｕ，Ｎｉ，Ｎｉ−Ｃｕ，Ｎｉ−Ａｕ，ＴｉＷ−Ｃｕ，Ｔｉ−Ｖ−Ｃｕなども採用できる。
以上のとおりの微小金属１１は、たとえば図９〜１０に例示したような方法により作製することができる。
まず、図９に例示したように、Ａｌ酸化皮膜５の表面全体を覆うようにフォトレジスト１７を塗布し、フォトリソグラフィによって貫通孔１６を形成させたい位置および形状パターンにフォトレジスト１７を露光、現像する。続いて、Ａｒ+イオンミリングやＲＩＥ（塩素系ガス）エッチングなどのドライエッチング、あるいはアルカリＮａＯＨ、ＫＯＨ、酸等のウェットエッチングにより、Ａｌ酸化皮膜５に貫通孔１６を形成する。次に、図１０に例示したように、スパッタリングや蒸着などの真空蒸着、あるいはめっきにより、貫通孔１６内に微小金属１１を埋め込む、後は図１１に例示したように、アセトンなどの有機溶剤等を用いたリフトオフにより、フォトレジストを除去する。以上により、Ａｌ酸化皮膜５を貫通してＡｌ電極４に届く微小金属１１を作製することができる。
また、プラズマエッチング及びプラズマスパッタリングを利用して微小金属１１を作製することもできる。具体的には、例えば、アルゴンプラズマにより、所望形状及び寸法の孔を持つメタルマスクを介してＡｌ酸化皮膜５をエッチングして貫通孔１６を形成し、アルゴンプラズマ雰囲気下で貫通孔１６にＡｇを蒸着する。
その他、たとえば図１２に例示したように、加熱及び圧接によって、Ａｌ酸化皮膜５を破って微小金属１１を打ち込むちという方法も考えられる。また超音波によっても、Ａｌ酸化皮膜５に微小金属１１を埋め込むことができる。
以上の微小金属１１の材料は、不動態皮膜生成し難く、かつはんだと濡れ性がある金属材料が好ましく、たとえばＡｕ，Ａｇ、Ｐｔ、Ｐｄ、Ｎｉなどを用いることができる。
ワイヤボンディングについては、たとえば図１３に例示したように、超音波などによって、Ａｕワイヤ６（ワイヤ形状の金属）をＡｌ電極４に直接埋め込むことによって、微小金属１１の形成と同時にワイヤボンディングを実現することができる。
ここで、実際にプラズマエッチング（アルゴンプラズマ〜０．５Ｐａ Ａｒ、エッチング時間約１０分）及びプラズマスパッタリング（アルゴンプラズマ雰囲気）によりＡｇ微小金属を形成後、Ａｕ−Ｓｎ共晶はんだを塗布して、窒素リフローを行った場合の接合強度評価及び破面分析を行った。その結果、Ａｇ微小金属とＡｌ電極との界面での良好な接合が確認された。また、Ａｌ電極とはんだとの接合強度についても５０ＭＰａ以上が得られた。
リフローについては、リフロー時にはんだが微小金属の部分からＡｌ電極と反応して、Ａｌ原子がはんだに固溶しており、リフロー温度が高いほどはんだとＡｌ電極との反応速度が速くなり、一方リフロー温度が一定の場合ははんだの接合面積がはんだ量の増加に伴い増加した。
１ 半導体チップ
２ Ｎｉ／Ａｇ電極
３ 接合金属
４ Ａｌ電極
５ Ａｌ酸化皮膜
６ ワイヤ
７ 拡散バリヤ層
８ Ａｕ酸化防止層
９ Ｚｎ粒子
１０ Ｎｉ（Ｐ）層
１１ 微小金属
１２ はんだ
１３ 微小金属原子
１４ Ａｌ原子
１５ ＤＢＣ基板
１６ 貫通孔
１７ フォトレジスト

Claims (9)

  1. 半導体チップに設けられたはんだ直接付け及びワイヤボンディング両用のＡｌ電極と、
    前記Ａｌ電極上のＡｌ酸化皮膜と、
    前記Ａｌ酸化皮膜に形成された貫通孔に設けられた微小金属と、
    を備え、
    前記微小金属が、前記Ａｌ酸化皮膜及び前記Ａｌ電極を貫通する、半導体装置。
  2. 前記微小金属が、さらに前記半導体チップと前記Ａｌ電極との間に介在する接合金属を貫通する、請求項１に記載の半導体装置。
  3. 前記微小金属が、さらに前記半導体チップを貫通する、請求項２に記載の半導体装置。
  4. 前記微小金属が、不動態皮膜生成し難く、かつはんだと濡れ性がある金属である、請求項１ないし３のいずれかに記載の半導体装置。
  5. 前記微小金属が、Ａｕ、Ａｇ、Ｐｔ、Ｐｄ、またはＮｉである、請求項１ないし４のいずれかに記載の半導体装置。
  6. 半導体チップに設けられたはんだ直接付け及びワイヤボンディング両用のＡｌ電極上のＡｌ酸化皮膜に、貫通孔を通して該Ａｌ酸化皮膜を貫通してＡｌ電極に届き、且つ該Ａｌ電極を貫通する微小金属を形成する、半導体装置の製造方法。
  7. 前記微小金属を含む前記Ａｌ酸化皮膜の表面にはんだを塗布する、請求項６に記載の半導体装置の製造方法。
  8. 前記Ａｌ酸化皮膜の貫通孔にワイヤ形状の金属を埋め込むことにより、前記微小金属を形成する、請求項７に記載の半導体装置の製造方法。
  9. 前記微小金属が、Ａｕ、Ａｇ、Ｐｔ、Ｐｄ、またはＮｉである、請求項６ないし８のいずれかに記載の半導体装置の製造方法。
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