JP2000286287A - ワイヤボンディング装置およびワイヤボンディング方法 - Google Patents

ワイヤボンディング装置およびワイヤボンディング方法

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Publication number
JP2000286287A
JP2000286287A JP11090639A JP9063999A JP2000286287A JP 2000286287 A JP2000286287 A JP 2000286287A JP 11090639 A JP11090639 A JP 11090639A JP 9063999 A JP9063999 A JP 9063999A JP 2000286287 A JP2000286287 A JP 2000286287A
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Japan
Prior art keywords
bonding
wire
electrode
oxide film
natural oxide
Prior art date
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Pending
Application number
JP11090639A
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English (en)
Inventor
Ken Takahashi
謙 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP11090639A priority Critical patent/JP2000286287A/ja
Publication of JP2000286287A publication Critical patent/JP2000286287A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】 【課題】 ボンディングワイヤのボンディング時に印加
される加重と超音波エネルギーのエネルギー不足によ
り、Ａｌ電極１表面の自然酸化膜３が除去されずに残っ
てしまった場合に生じる接合（絶縁）不良を防止する。 【解決手段】 半導体製品のチップ上のＡｌ電極１にボ
ンディングワイヤをボンディングする装置に、レーザ８
を配置し、ボンディングに先立ってレーザ光を照射して
Ａｌ電極１上の自然酸化膜３を除去する（ａ）。その後
に、ワイヤボンディングを行う［（ｂ）、（ｃ）、
（ｄ）］。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、半導体装置のチッ
プ上の電極とボンディングワイヤとを接合するワイヤボ
ンディング装置とワイヤボンディング方法に関し、特
に、その接合強度を向上させるための改良に関する。
【０００２】
【従来の技術】半導体チップ上の電極との接続のため
に、電極に金細線などからなるボンディングワイヤを接
触させ、超音波振動を与えて接合する超音波熱圧着方式
によるワイヤボンディング方法が広く用いられている。
超音波熱圧着方式では、ボンディングワイヤを被接合物
に加重をかけて押し付け、加熱しつつ超音波振動を加え
てワイヤを電極およびインナーリードなどの被接合物に
接合する。
【０００３】図２は、従来の超音波熱圧着方式のワイヤ
ボンディング方法の工程を説明する工程順の断面図であ
る。現在、電極とボンディングワイヤの材質としては、
それぞれアルミニウムと金が多く用いられている。電極
の材料をＡｌ（アルミニウム）、ボンディングワイヤの
材質を金として、従来の超音波熱圧着方式のワイヤボン
ディング方法について説明する。図２に示すように、半
導体チップ（図示なし）の表面に形成されたＡｌ電極１
上には、自然酸化膜３が形成されている。このＡｌ電極
１上にワイヤボンディングを施すに当たって、ボンディ
ングワイヤである金線２の先端部には金ボール５が形成
される。金ボール５が形成された金線２はキャピラリ４
に保持され、Ａｌ電極１上に待機している〔図２
（ａ）〕。このとき、半導体チップは予め所定の温度に
加熱されている。
【０００４】キャピラリ４が金ボール５を伴って降下
し、金ボール５をＡｌ電極１上に加重をもって接触させ
る。金ボール５はキャピラリ４の先端内壁の形状に沿っ
て変形され圧着ボール６が形成される。この工程で、金
ボール５とＡｌ電極１との間にずれが発生し、Ａｌ電極
１上の自然酸化膜３を破壊し、アルミニウムの新生面が
生じる〔図２（ｂ）〕。キャピラリ４が超音波振動し、
このときの加重や超音波によるエネルギーで圧着ボール
６とＡｌ電極１との接触面にアルミニウムと金との共晶
合金層７が生じ始める〔図２（ｃ）〕。加重と超音波エ
ネルギーにより、Ａｌ電極１と圧着ボール６との間の共
晶合金層７が形成され接合がなされる。キャピラリ４は
上昇し、Ａｌ電極１とボンディングワイヤとのボンディ
ングが完了する〔図２（ｄ）〕。
【０００５】
【発明が解決しようとする課題】上述した従来の超音波
熱圧着方式のワイヤボンディング方法では、正常なボン
ディングがされず、接合不良となることがある。図３
は、接合不良が発生する過程を説明する断面図である。
図３に示されるように、キャピラリ４により、金線２に
接した圧着ボール６に加重を加えたときに、Ａｌ電極１
上の自然酸化膜３が加重の不足や自然酸化膜の個体差に
より除去されないことがある〔図３（ａ）〕。
【０００６】この状態で、次の工程である加重と超音波
を圧着ボール６に加えても、自然酸化膜３の介在によ
り、Ａｌ電極１と圧着ボール６の接合面にＡｕ−Ａｌの
共晶合金層が形成されない〔図３（ｂ）〕。このよう
に、自然酸化膜が破壊されないことにより接合強度が弱
く接合不良となることがある。本発明の課題は、上記従
来技術の問題点を解決し、ワイヤボンディングにおける
接合強度を向上させ接合の信頼性を向上させることであ
る。
【０００７】
【課題を解決するための手段】上述の課題を達成するた
めに、半導体チップ上の電極にボンディングワイヤをボ
ンディングする装置に、電極上に形成される自然酸化膜
を除去するためのレーザを配置する。そして、ボンディ
ングを行う前に、レーザ光を照射して電極上の自然酸化
膜を除去する工程を設ける。
【０００８】
【発明の実施の形態】図１は、この発明にかかるワイヤ
ボンディング方法の一実施例を示す工程順の断面図であ
る。図１（ａ）に示されるように、ボンディング装置に
は、レーザ８が設けられている。図１（ａ）は、半導体
チップ（図示なし）がボンディング装置にセットされ、
半導体チップ上のＡｌ電極１上にキャピラリ４が移動
し、レーザ８がその放射ビームがＡｌ電極１上に照射さ
れる位置に移動してきた状態を示す。この状態で、レー
ザ８より、レーザビームがＡｌ電極１上に照射され、Ａ
ｌ電極１上の自然酸化膜３を除去し、Ａｌの新生面を生
じさせる。この後、レーザ８は、次のボンディング位置
に移動する。
【０００９】キャピラリ４が金線１の先端に形成された
金ボール５を押圧しつつ降下し、Ａｌ電極１上に金ボー
ル５を加重をもって接触させる。金ボール５はキャピラ
リ４の先端内壁の形状に沿って変形され、圧着ボール６
が形成される。前工程で自然酸化膜３が除去されている
ので、圧着ボール６は必ず新生Ａｌ面に接触される〔図
１（ｂ）〕。
【００１０】キャピラリ４が超音波振動し、このときの
加重や超音波によるエネルギーでＡｌ電極１と圧着ボー
ル６との接触面にアルミニウムと金とからなる共晶合金
層７が生じ始める〔図１（ｃ）〕。さらに加重と超音波
エネルギーが加えられることにより、Ａｌ電極１と圧着
ボール６の接触面に接合に充分な共晶合金層７が形成さ
れる。Ａｌ電極１とボンディングワイヤとのボンディン
グ（第１ボンディング）が完了し、キャピラリ４は超音
波振動を停止し上昇を開始する〔図１（ｄ）〕。
【００１１】その後、キャピラリ４は第２ボンディング
点であるインナーリード（図示なし）上に到達し、降下
して荷重・超音波エネルギーを加えて、金線をインナー
リードにボンディングする（第２ボンディング）。キャ
ピラリは上昇し、トーチ（図示なし）が金線に近づいて
新たに金ボールを形成するとともに金線を切断する。そ
の後、キャピラリ４は次のボンディング点に移動して、
図１（ａ）に示す状態に戻る。
【００１２】
【実施例】具体的な実施例としては、半導体装置のチッ
プ上のＡｌ電極１とボンディングワイヤ２のボンディン
グ時に、Ａｌ電極１上に形成される自然酸化膜３を窒素
雰囲気中にて波長２４８ｎｍ、エネルギー１５Ｊ／ｃｍ
2 以下のレーザ８で除去する。ここで、窒素雰囲気中に
て行うのは、レーザの熱によるアルミニウムの酸化を防
ぐためである。自然酸化膜が除去され、アルミニウムが
露出したＡｌ電極１と金線２の先端に形成された金ボー
ル５が接し、圧着ボール６が形成し始めると同時に、加
重と超音波エネルギーにて、Ａｌ電極１上のアルミニウ
ムと圧着ボール６の金の共晶合金が進行して、共晶合金
層７ができることにより、Ａｌ電極１とボンディングワ
イヤが接合する。
【００１３】なお、上記の実施例として超音波熱圧着方
式を用いて説明したが、本発明は超音波を用いない熱圧
着方式のワイヤボンディング方法にも適用できる。さら
に、アルミニウム線をＡｌ電極上にボンディングする超
音波方式のボンディングにも適用できる。
【００１４】また、ボンディングワイヤは、金線または
アルミニウム線に限らず、銅線など他の材料を用いたも
のに置き換えることができる。さらに、電極の材料もア
ルミニウム以外であってもよい。共晶合金を生じない金
属同士であっても、本発明のワイヤボンディング方法を
用いれば、電極の新生面にボンディングを行うことがで
きるので、信頼性の高いボンディングを行うことができ
る。また、実施例では、ボンディングを窒素雰囲気中で
行っていたが、これに代えて他の非酸化性雰囲気を用い
てもよい。また、レーザも紫外線以外の可視光レーザや
赤外線レーザを用いることができる。
【００１５】
【発明の効果】以上説明したように、本発明は、半導体
装置のワイヤボンディング時に電極上の自然酸化膜をレ
ーザ光により除去するものであるので、ボンディング接
合強度を向上させてボンディング時の接合不良をなくす
ことができる。したがって、本発明によれば、ボンディ
ング工程での歩留まりを向上させ、半導体装置の信頼性
を向上させることができる。
【図面の簡単な説明】
【図１】本発明の一実施例を説明する工程順の断面図。
【図２】従来の方法を説明する工程順の断面図。
【図３】従来の方法で接続不良が生じることを示す断面
図。
【符号の説明】
１ Ａｌ電極 ２ 金線 ３ 自然酸化膜 ４ キャピラリ ５ 金ボール ６ 圧着ボール ７ 共晶合金層 ８ レーザ

Claims (7)

    【特許請求の範囲】
  1. 【請求項１】 ボンディングワイヤが挿通され、降下時
    にボンディングエネルギーをワイヤに伝達するワイヤ保
    持具と、前記ワイヤ保持具下に搭載された半導体チップ
    の電極上にレーザ光を照射するレーザと、を備えたこと
    を特徴とするワイヤボンディング装置。
  2. 【請求項２】 前記ワイヤ保持具に超音波振動を伝達す
    る超音波振動印加手段が備えられていることを特徴とす
    る請求項１記載のワイヤボンディング装置。
  3. 【請求項３】 前記レーザは、前記電極上へのボンディ
    ングが行われる直前にレーザ光を放射するものであるこ
    とを特徴とする請求項１記載のワイヤボンディング装
    置。
  4. 【請求項４】 半導体チップ上の電極上に形成される自
    然酸化膜をレーザ光を照射して除去する工程を有し、ボ
    ンディングワイヤを前記自然酸化膜の除去された電極上
    に当接させてボンディングを行うことを特徴とするワイ
    ヤボンディング方法。
  5. 【請求項５】 前記レーザ光を照射して自然酸化膜を除
    去する工程を、非酸化性雰囲気中にて行なうことを特徴
    とする請求項４記載のワイヤボンディング方法。
  6. 【請求項６】 前記非酸化性雰囲気が窒素雰囲気である
    ことを特徴とする請求項５記載のワイヤボンディング方
    法。
  7. 【請求項７】 ボンディングを熱圧着法または超音波熱
    圧着法にて行うことを特徴とする請求項４記載のワイヤ
    ボンディング方法。
JP11090639A 1999-03-31 1999-03-31 ワイヤボンディング装置およびワイヤボンディング方法 Pending JP2000286287A (ja)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010510A2 (en) * 2006-04-03 2007-01-25 Michael Mayer Method and device for wire bonding with low mechanical stress
JP2010171421A (ja) * 2008-12-26 2010-08-05 National Institute Of Advanced Industrial Science & Technology 半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010510A2 (en) * 2006-04-03 2007-01-25 Michael Mayer Method and device for wire bonding with low mechanical stress
WO2007010510A3 (en) * 2006-04-03 2007-06-07 Michael Mayer Method and device for wire bonding with low mechanical stress
JP2010171421A (ja) * 2008-12-26 2010-08-05 National Institute Of Advanced Industrial Science & Technology 半導体装置及びその製造方法

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