JP2792337B2 - ワイヤボンディング装置 - Google Patents

ワイヤボンディング装置

Info

Publication number
JP2792337B2
JP2792337B2 JP4143876A JP14387692A JP2792337B2 JP 2792337 B2 JP2792337 B2 JP 2792337B2 JP 4143876 A JP4143876 A JP 4143876A JP 14387692 A JP14387692 A JP 14387692A JP 2792337 B2 JP2792337 B2 JP 2792337B2
Authority
JP
Japan
Prior art keywords
wire
capillary
bonding
inner lead
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4143876A
Other languages
English (en)
Other versions
JPH05343461A (ja
Inventor
一郎 古田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4143876A priority Critical patent/JP2792337B2/ja
Publication of JPH05343461A publication Critical patent/JPH05343461A/ja
Application granted granted Critical
Publication of JP2792337B2 publication Critical patent/JP2792337B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Laser Beam Processing (AREA)

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体装置の製造工程に
おいて、半導体素子の電極パッドとリードフレームのイ
ンナーリードとを金属ワイヤを絶縁材で被覆した被覆ワ
イヤを用いて接続するワイヤボンディング装置に関す
る。
【０００２】
【従来の技術】従来、半導体素子の電極パッドとインナ
ーリードとを被覆ワイヤで接続するワイヤボンディング
の方法及びその装置は、図４及び図５の工程図（ａ）〜
（ｄ）で示す様に、まず図（ａ）においてキャピラリー
１１から突出させた被覆ワイヤ２の先端に、電気スパー
ク等によりボール３を形成させた後、キャピラリー１１
を下降させ、図（ｂ）の様にボール３を半導体素子４上
の電極パッド５に押しつけ、第１ボンディングを行な
う。次に、キャピラリー１１を上昇させ、インナーリー
ド６の所定の位置へ水平移動させる。その後、図（ｃ）
の様に再びキャピラリー１１を下降させて被覆ワイヤ２
をインナーリード６に押圧し、第２ボンディングを行な
う。次に図（ｄ）の様にクランプを閉じて被覆ワイヤ２
とキャピラリー１１を同時に上昇させ、被覆ワイヤ２の
先端に再びボール３を作って次の第１ボンディングに備
える。
【０００３】上記方法及び装置において、半導体素子４
及びインナーリード６はヒーター１０により３００℃に
保持されている。また、キャピラリー１１は通常のキャ
ピラリーよりもその先端面の外径を大きくし、被覆ワイ
ヤ２をインナーリードに押圧する部分の面積を大きくし
密着性を向上させている。
【０００４】
【発明が解決しようとする課題】上述した従来のワイヤ
ボンディング方法及び装置では、次の様な問題がある。
【０００５】 図５（ｃ）で示す様に、金属ワイヤが
被覆材で被覆された状態で第２ボンディングが行われる
ため、インナーリードと被覆ワイヤの接合において被覆
材がインナーリード６と金属ワイヤ２との接合面間に介
在し、インナーリードと被覆ワイヤの接合が十分に行わ
れない。
【０００６】 被覆なしワイヤのボンディングに使用
するキャピラリーに較べ、キャピラリー先端面の外径が
大きい為、パッドピッチが１５０μｍ以下の小パッドピ
ッチを有するチップには適用できない。
【０００７】 高温でボンディングを行うため、金属
ワイヤが金線の場合のＡｌ製電極パッドと金属ワイヤの
接合部には金とアルミニウムの化合物が生じる。このた
め接合部で電気特性の劣化が生じる。
【０００８】そこで、本発明は上述した問題を解消し組
立歩留りを向上させるためのワイヤボンディング装置を
提供することを目的としている。
【０００９】
【課題を解決するための手段】本発明は、キャピラリー
を所定のボンディング位置に移動させ、第２ボンディン
グを施す前にキャピラリーに近接配置されたレーザー照
射装置を用いてキャピラリー先端部の被覆ワイヤ部にレ
ーザーを照射し、被覆材を除去し、荷重及び超音波を印
加して第２ボンディングを施すワイヤボンディング装置
である。
【００１０】
【実施例】次に本発明について図面を参照して詳細に説
明する。
【００１１】図１及び図２は本発明の一実施例の工程図
（ａ）〜（ｅ）を示す。
【００１２】同図（ａ）に示される様に、キャピラリー
１から突出させた被覆ワイヤ２の先端の被覆材は、電気
スパークによりボール３の形成と同時に除去される。次
に同図（ｂ）に示す様に、キャピラリー１を下降させ、
ボール３をヒーター１０により２００〜２５０℃に加熱
された半導体素子４上の電極パッド５に荷重３０〜５０
ｇで押しつけ、超音波を印加して第１ボンディングを行
なう。その後、同図（ｃ）でキャピラリー１を上昇さ
せ、インナーリード６まで水平移動させ、同図（ｄ）で
示す様に、キャピラリー１に近接配置されキャピラリー
１と一体に移動するレーザー照射装置９により、キャピ
ラリー１先端の被覆ワイヤ部８に５０Ｗのレーザーを５
ｍｓｅｃ照射し、第２ボンディングされる部分の被覆材
を除去し金属ワイヤを露出させる。次に、同図（ｅ）の
様にインナーリード６に第２ボンディングを施す。
【００１３】次に図３に他の実施例を示す。図１と同一
部分には同一符号を付してある。図に示す様に、レーザ
ー照射装置９をキャピラリー１に近接して２器配置させ
ることで、被覆材をより効率的に除去することが可能と
なる。
【００１４】また、レーザーを２方向から照射するため
レーザーの出力を小さくでき、これにより除去部分の拡
大を抑えることも可能となる。
【００１５】以上説明した実施例により、従来のワイヤ
ボンディング方法での組立歩留りの大幅な向上が可能で
ある。
【００１６】
【発明の効果】以上説明した様に本発明は、インナーリ
ードにボンディングする際、第２ボンディング部の被覆
ワイヤ部分にレーザーを照射し、被覆材を除去後第２ボ
ンディングを行うため、溶解した被覆材により接合が妨
害されることもなくなり、またキャピラリー先端面の外
径を大きくする必要もなく、さらにボンディング温度を
低くできるので金とアルミニウムの化合物の発生も防止
できる。従って、被覆なしワイヤを用いたワイヤボンデ
ィング並みの組立歩留りでボンディングできるという効
果がある。
【００１７】また、１６０ピン以上の多ピンＱＦＰにお
いて、隣り合うワイヤ同志の接触による不良で組立歩留
りがかなり低下しているパッケージに対しても本発明の
ワイヤボンディング方法を採用することで隣り合うワイ
ヤ同志の接触不良が無視できるため組立歩留りの向上が
望め、更には超多ピンパッケージに対しても組立の可能
性が大いに期待できるという効果がある。
【図面の簡単な説明】
【図１】本発明の一実施例を説明する図で、同図（ａ）
〜（ｃ）はそれぞれ工程図である。
【図２】本発明の一実施例を説明する図で、同図
（ｄ），（ｅ）はそれぞれ工程図である。
【図３】本発明の他の実施例を説明する断面図である。
【図４】従来のボンディング方法を説明する図で、同図
（ａ），（ｂ）はそれぞれ工程図である。
【図５】従来のボンディング方法を説明する図で、同図
（ｃ），（ｄ）はそれぞれ工程図である。
【符号の説明】
１ キャピラリー ２ 被覆ワイヤ ３ ボール ４ 半導体素子 ５ 電極パッド ６ インナーリード ７ クランパ ８ 被覆ワイヤ部 ９ レーザー照射装置 １０ ヒーター １１ キャピラリー

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】 半導体素子上の電極パッドとリードフレ
    ームのインナーリード部とを金属ワイヤを絶縁材で被覆
    した被覆ワイヤを用いて接続するワイヤボンディング装
    置において、キャピラリーと一体に移動するレーザー照
    射装置を設け、第２ボンディングを施す前に第２ボンデ
    ィングされる部分の被覆ワイヤ部にレーザーを照射し被
    覆材を除去することを特徴とするワイヤボンディング装
    置。
JP4143876A 1992-06-04 1992-06-04 ワイヤボンディング装置 Expired - Lifetime JP2792337B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4143876A JP2792337B2 (ja) 1992-06-04 1992-06-04 ワイヤボンディング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4143876A JP2792337B2 (ja) 1992-06-04 1992-06-04 ワイヤボンディング装置

Publications (2)

Publication Number Publication Date
JPH05343461A JPH05343461A (ja) 1993-12-24
JP2792337B2 true JP2792337B2 (ja) 1998-09-03

Family

ID=15349067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4143876A Expired - Lifetime JP2792337B2 (ja) 1992-06-04 1992-06-04 ワイヤボンディング装置

Country Status (1)

Country Link
JP (1) JP2792337B2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2990128B2 (ja) 1997-10-16 1999-12-13 九州日本電気株式会社 半導体装置内部接続用被覆金属細線
JP3382918B2 (ja) * 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101043A (ja) * 1984-10-24 1986-05-19 Hitachi Ltd ワイヤボンデイング装置
JPH04109638A (ja) * 1990-08-29 1992-04-10 Fujitsu Ltd ワイヤボンディング法及びその方法に使用する装置

Also Published As

Publication number Publication date
JPH05343461A (ja) 1993-12-24

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