JP2990128B2 - 半導体装置内部接続用被覆金属細線 - Google Patents

半導体装置内部接続用被覆金属細線

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Publication number
JP2990128B2
JP2990128B2 JP9283861A JP28386197A JP2990128B2 JP 2990128 B2 JP2990128 B2 JP 2990128B2 JP 9283861 A JP9283861 A JP 9283861A JP 28386197 A JP28386197 A JP 28386197A JP 2990128 B2 JP2990128 B2 JP 2990128B2
Authority
JP
Japan
Prior art keywords
coated
coating film
metal wire
internal connection
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP9283861A
Other languages
English (en)
Other versions
JPH11121501A (ja
Inventor
直人 木村
隆博 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP9283861A priority Critical patent/JP2990128B2/ja
Priority to KR1019980043221A priority patent/KR100327948B1/ko
Priority to CN98120434A priority patent/CN1215214A/zh
Priority to US09/173,742 priority patent/US6239376B1/en
Publication of JPH11121501A publication Critical patent/JPH11121501A/ja
Application granted granted Critical
Publication of JP2990128B2 publication Critical patent/JP2990128B2/ja
Priority to US09/664,717 priority patent/US6640436B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49192—Assembling terminal to elongated conductor by deforming of terminal with insulation removal

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は半導体装置内部接続
用被覆金属細線に関し、特にその被覆絶縁材料に関す
る。
【０００２】
【従来の技術】従来の半導体装置内部接続用被覆金属細
線は、金属細線の周囲が、絶縁性材料の被覆絶縁膜で被
覆されており、その外観は、本発明の半導体装置内部接
続用被覆金属細線の外観と同様である（図１参照）。
【０００３】このような被覆ワイヤに関しては、たとえ
ば特開平７−２６８２７８号公報に、被覆ワイヤの被覆
絶縁膜の材料として、エポキシ樹脂とフェノール樹脂硬
化剤からなるエポキシ樹脂組成物を硬化して得られる耐
熱エポキシ樹脂、あるいは透明または半透明の被覆膜を
形成する熱可塑性樹脂または５ミクロン以下の分散粒子
径を形成する可とう化剤を含み、ガラス転移温度が１２
５℃以上を有する耐熱エポキシ樹脂を被覆材として用い
ることが記載されている。
【０００４】また、上述の公報には、被覆ワイヤの被覆
絶縁膜の材料に関する公知技術として、更にポリウレタ
ン樹脂、ナイロン樹脂、ポリイミド樹脂、フッ素系樹
脂、ポリエチレン樹脂、ポリ塩化ビニル樹脂、絶縁ワニ
スであるエナメル、ホルマール、ポリエステル樹脂、耐
熱ポリウレタン樹脂が記載されている。
【０００５】
【発明が解決しようとする課題】公知例に記載されてい
るこれらの被覆絶縁膜の材料のうち、ポリエステル樹脂
は膜の剛性が高すぎて脆くなるため、ボンディング性が
悪く、ボンディング不良を生じるおそれがある。またポ
リエステル樹脂も含めて、ポリイミド樹脂、ナイロン樹
脂、フッ素系樹脂は、樹脂の耐熱性が高いものの、逆
に、金属ボールの形成時における加熱温度で分解せずに
炭化してしまうので、半導体チップの電極端子へのワイ
ヤボンディング時に被覆ワイヤに付着した炭化物がキャ
ピラリに引っ掛かってワイヤの供給を妨害したり、金属
ボールに付着した炭化物の為に、金属ボールと電極端子
間の接合性を阻害する。一方リード側への被覆ワイヤボ
ンディングを高信頼で行なうためには、接合部分の被覆
を放電等によって熱的に除去することが必要であるが、
前記の被覆材料では炭化物が接合部の金属線表面に残留
するため、引き続いて行なわれる接合において、信頼性
の高い接合を行なうことが出来ない。また、耐熱エポキ
シ樹脂を被覆膜として用いたものでは、上述の耐熱性、
炭化物発生等のの問題を改善し、ボンディングによる接
合の信頼性の向上が図られている。
【０００６】しかし、この改善された耐熱エポキシ樹脂
を被覆膜として用いたものでも、ボンディング時の被覆
膜除去は放電加工によって行われており、特に金属細線
を溶融させることなく被覆膜を除去する際の安定性は充
分とはいえない。
【０００７】本発明の目的は、被覆されている金属細線
を溶融させることなく被覆膜を除去する際も、確実に安
定して除去することができる被覆膜を用いた半導体装置
内部接続用被覆金属細線とこの被覆金属細線を用いた半
導体装置の組立方法を提供するものである。
【０００８】
【課題を解決するための手段】本発明の半導体装置内部
接続用被覆金属細線は、その絶縁性被覆膜に１〜３５重
量％のチタン白，亜鉛華，鉛白，リトポン，黄鉛，カド
ミウムイエロー，コバルトイエロー，モリブデン赤，カ
ドミウムレッド，べんがら，鉛丹，コバルトグリーン，
クロムグリーン，カーボンブラック，鉄黒を含有してい
る。
【０００９】又、本発明の他の半導体装置内部接続用被
覆金属細線は、その絶縁性被覆膜に１〜３０重量％の炭
素微粉末を含有している。
【００１０】更に、本発明の半導体装置内部接続用被覆
金属細線を用いた半導体装置の組立方法は、前述の被覆
金属細線を半導体チップ又はパッケージに接続する前
に、被覆金属細線の絶縁性被覆膜がレーザ光照射により
除去するのが好ましい。
【００１１】本発明の半導体装置内部接続用被覆金属細
線は、金線，Ａｌ線或いは銅線等の金属細線を被覆する
絶縁性被覆膜に前述の通り光を効率よく吸収する材料、
或いは炭素微粉末が所定の比率以上含ませてあるので、
適切な波長を選ぶことで光の吸収効率が大きく向上して
おり、絶縁性被覆膜に含ませた顔料，染料或いは炭素微
粉末に応じて、適切な波長と出力のレーザ光を選び、被
覆膜を除去したい位置に照射することで照射部の絶縁性
被覆膜が効率よく除去される。
【００１２】
【発明の実施の形態】次に、本発明の実施の形態を図面
を参照して詳細に説明する。図１は、本発明の一実施形
態の半導体装置内部接続用被覆金属細線の模式的な外観
斜視図である。
【００１３】本実施形態の被覆金属細線１は、金線から
なる金属細線２が、鉄黒顔料を略１５重量％含有するナ
イロン樹脂でなっている絶縁性被覆膜３で被覆されてい
る。
【００１４】図２は、この被覆金属細線１にレーザ光４
を照射することにより、絶縁性被覆膜３が除去された状
態を示す模式的な外観斜視図である。被覆金属細線１に
レーザ光４を照射することで照射部５の絶縁性被覆膜３
が除去され、金属細線２が露出している。前述の通り、
本実施形態の被覆金属細線１は、絶縁性被覆膜３が鉄黒
顔料を略１５重量％含有するナイロン樹脂でなっている
のでレーザ光４の吸収効率が良く、金属細線２に損傷を
与えることなく照射部５の絶縁性被覆膜３のみが完全に
除去される。
【００１５】次に、本発明の被覆金属細線１を用いた半
導体装置の組立方法について、図面を参照して説明す
る。
【００１６】図３は、この被覆金属細線１を用いて半導
体装置の内部接続が行われた状態を模式的に示す断面図
である。リードフレーム（又は、パッケージ）のアイラ
ンド１４上に銀ペースト等の接着剤１３で接着・搭載さ
れたチップ１１のパッド１２に被覆金属細線１の一端が
ボンディング接続された後、リード１５側がボンディン
グ接続される。
【００１７】具体的には、パッド１２側は、被覆金属細
線１の端部を放電加工により絶縁性被覆膜３を除去する
と共に金線１を溶融させてボール６を形成し、熱圧着ボ
ンディングにより接続される。一方、リード１５側は、
被覆金属細線１のリード側ボンディング接続部７に該当
する部分の絶縁性被覆膜３が完全に除去されるよう照射
部５を設定してレーザ光４を照射し、絶縁性被覆膜３を
除去した後、リード１５に被覆金属細線１のリード側ボ
ンディング接続部７を熱圧着ボンディングすることで接
続される。
【００１８】図４は、被覆金属細線４１の金属細線４２
がＡｌの場合について、半導体装置の内部接続が行われ
た状態を模式的に示す断面図である。この場合、パッド
１２側については、被覆金属細線４１の放電加工による
ボール形成は出来ないので、超音波接続部４４に該当す
る部分の絶縁性被覆膜４３が完全に除去されるよう照射
部５を設定してレーザ光４を照射し、絶縁性被覆膜４３
を除去した後、パッド１２に被覆金属細線４１の超音波
接続部４４を超音波ボンディングすることで接続され
る。リード４６側の接続は、図３の場合と同様であるの
で説明を省略する。
【００１９】上述の半導体装置の組立方法によれば、本
発明の被覆金属細線の絶縁性被覆膜が、レーザ光を照射
することで金属細線に無用の損傷を与えることなく除去
されるので、より安定したボンディング接続が可能とな
っている。
【００２０】特に、本発明の被覆金属細線のように絶縁
性被覆膜に光を効率よく吸収する材料を適当な割合で含
有させてある場合は、絶縁性被覆膜がレーザ光を吸収す
る吸収効率が向上しているため一層効果的である。
【００２１】更に、使用するレーザを紫外レーザとすれ
ば、レーザ光が絶縁性被覆膜のより表面に近いところで
吸収されるようになり、更に効果的である。
【００２２】尚、絶縁性被覆膜に含有させる炭素微粉
末、光を効率よく吸収する材料の種類、含有比率は、被
覆膜の基材となる物質や被覆条件（被覆膜厚等）に応じ
て適宜選択すればよい。又、絶縁性被覆膜を除去するた
めのレーザ光の波長、出力は、被覆膜の基材となる物
質、被覆条件、含有している炭素微粉末、顔料或いは染
料の種類及び含有比率を考慮して適切な条件を選択すれ
ばよい。
【００２３】
【発明の効果】本発明の半導体装置内部接続用被覆金属
細線は、その絶縁性被覆膜に光を効率よく吸収する材料
を含有させることにより、レーザ光が絶縁性被覆膜に効
率よく吸収され、金属細線に無用の損傷を与えることな
く、レーザ光照射部の絶縁性被覆膜のみ除去することが
でき、安定したボンディング接続を実現できるという効
果が得られる。
【図面の簡単な説明】
【図１】本発明の半導体装置内部接続用被覆金属細線の
模式的な外観斜視図である。
【図２】図１の被覆金属細線の絶縁性被覆膜が除去され
た状態を示す模式的な外観斜視図である。
【図３】金属細線が金線からなる被覆金属細線を用いて
半導体装置の内部接続が行われた状態を模式的に示す断
面図である。
【図４】金属細線がＡｌ線からなる被覆金属細線を用い
て半導体装置の内部接続が行われた状態を模式的に示す
断面図である。
【符号の説明】
１，４１ 被覆金属細線 ２，４２ 金属細線 ３，４３ 絶縁性被覆膜 ４ レーザ光 ５ 照射部 ６ ボール ７ リード側ボンディング接続部 １１ チップ １２ パッド １３ 接着剤 １４ アイランド １５，４６ リード ４４ 超音波接続部

Claims (4)

    (57)【特許請求の範囲】
  1. 【請求項１】 絶縁性被覆膜で周囲を被覆された半導体
    装置内部接続用被覆金属細線において、前記絶縁性被覆
    膜が１〜３５重量％のチタン白，亜鉛華，鉛白，リトポ
    ン，黄鉛，カドミウムイエロー，コバルトイエロー，モ
    リブデン赤，カドミウムレッド，べんがら，鉛丹，コバ
    ルトグリーン，クロムグリーン，カーボンブラック又は
    鉄黒を含有していることを特徴とする半導体装置内部接
    続用被覆金属細線。
  2. 【請求項２】 絶縁性被覆膜で周囲を被覆された半導体
    装置内部接続用被覆金属細線において、前記絶縁性被覆
    膜が１〜３０重量％の炭素微粉末を含有していることを
    特徴とする半導体装置内部接続用被覆金属細線。
  3. 【請求項３】 絶縁性被覆膜で周囲を被覆された半導体
    装置内部接続用被覆金属細線において、前記絶縁性被覆
    膜が所定の波長のレーザ光を効率よく吸収する材料を含
    有していることを特徴とする半導体装置内部接続用被覆
    金属細線。
  4. 【請求項４】 前記炭素微粉末は、粒径が１μｍ以下で
    ある請求項２記載の半導体装置内部接続用被覆金属細
    線。
JP9283861A 1997-10-16 1997-10-16 半導体装置内部接続用被覆金属細線 Expired - Fee Related JP2990128B2 (ja)

Priority Applications (5)

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JP9283861A JP2990128B2 (ja) 1997-10-16 1997-10-16 半導体装置内部接続用被覆金属細線
KR1019980043221A KR100327948B1 (ko) 1997-10-16 1998-10-15 피복되고미세한금속와이어및이를이용한반도체장치의조립방법
CN98120434A CN1215214A (zh) 1997-10-16 1998-10-16 涂层细金属线和使用它的半导体器件的制造方法
US09/173,742 US6239376B1 (en) 1997-10-16 1998-10-16 Coated fine metallic wire and method for fabricating semiconductor device using same
US09/664,717 US6640436B1 (en) 1997-10-16 2000-09-19 Method of fabricating a coated metallic wire, method of removing insulation from the coated metallic wire and method of fabricating a semiconductor device with the wire

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JP9283861A JP2990128B2 (ja) 1997-10-16 1997-10-16 半導体装置内部接続用被覆金属細線

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JP2990128B2 true JP2990128B2 (ja) 1999-12-13

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US6640436B1 (en) 2003-11-04
US6239376B1 (en) 2001-05-29
JPH11121501A (ja) 1999-04-30
KR19990037134A (ko) 1999-05-25
KR100327948B1 (ko) 2002-06-26
CN1215214A (zh) 1999-04-28

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